Diodos
Produtos (171)
BAP51-05W - Dual PIN Diode 50V SC-70 | NXP Semiconductors
The NXP Semiconductors BAP51-05W is a general-purpose silicon PIN diode pair with two series-connected elements in a common-cathode configuration, housed in a 3-pin SC-70 (SOT323) surface-mount plastic package. It is rated for a reverse voltage of 50 V, a forward current of 50 mA, and a total power dissipation of 240 mW, and is qualified to the AEC-Q101 automotive standard for discrete semiconductors. A PIN diode (positive-intrinsic-negative) is a special type of diode with a wide, lightly doped intrinsic region between the P and N layers. This intrinsic layer makes the PIN diode behave as a nearly ideal, current-controlled RF resistance when forward biased and as a low-capacitance, high-blocking element when reverse biased. Within the power-management and signal-chain hierarchy, PIN diodes belong to the RF diode family alongside varactors and Schottky diodes, and they are the standard switching element in RF front ends, attenuators, and antenna switching networks. Key features of the BAP51-05W include low diode capacitance for minimal loading of RF signal paths, low forward resistance (RF series resistance) for low insertion loss in the on-state, two matched diode elements in one package for balanced series/shunt attenuator topologies, and automotive-grade AEC-Q101 qualification. The small SC-70 footprint (2.0 x 1.25 mm body) conserves board area in dense RF modules. Architecturally, the common-cathode pair allows the device to serve as a series-connection element in voltage-variable attenuators, where one diode can be placed in the signal path and the second in a shunt or reference leg, simplifying bias networks and improving thermal tracking between elements. Because both dice share the same package thermal environment, resistance matching over temperature is superior to two discrete diodes. Typical applications include RF switching circuits in transceivers, voltage-variable attenuators in cellular and wireless infrastructure, AGC (automatic gain control) circuits, and antenna switch modules in automotive and industrial radio systems. The 50 V reverse rating also provides margin in higher-voltage bias designs. Design consideration: PIN diode RF resistance is proportional to forward bias current, so bias network stability directly determines attenuation accuracy; use a temperature-stable current source and adequate RF bypassing of the bias feed. This page synthesizes distributor pricing, drop-in alternatives, design notes, and application guidance not found in the manufacturer datasheet.
BAP64 - Silicon PIN Diode 3GHz RF Switch | NXP Semiconductors
The NXP Semiconductors BAP64 is a silicon PIN diode optimized for RF switching and attenuator applications up to 3 GHz, offered in the 3-pin SOT-23 (TO-236AB) surface-mount package with variants spanning single-diode and series-pair configurations. Family members include BAP64-02, BAP64-03, BAP64-04W (SC-70 series pair, 100V, 100 mA, 240 mW) and BAP64-06 (SOT-23, 175V), all sharing the same underlying PIN die technology with low series resistance and high reliability. A PIN diode is a semiconductor device with a lightly doped intrinsic layer sandwiched between P-type and N-type regions. Under forward bias, stored carriers in the intrinsic region make the diode behave as a current-controlled resistor; under reverse bias it behaves as a small, nearly-lossless capacitor. This unique characteristic makes PIN diodes the preferred switching and variable-attenuation element in RF and microwave signal chains, sitting within the broader hierarchy of diodes, discrete semiconductors, and RF components. Key features of the BAP64 family include operation to 3 GHz, low series resistance in forward conduction, low capacitance in the reverse-bias state for minimal insertion loss, and voltage ratings from 100V to 175V depending on the suffix. The SOT-23/TO-236AB package provides a compact footprint for high-density RF boards, and the BAP64-04W variant comes in the even smaller SC-70 package as a series-connected pair for T/R switch topologies. Architecturally, the BAP64 die uses a silicon PIN structure engineered for fast carrier lifetime and controlled charge storage, so it switches cleanly at RF without generating the harmonic distortion typical of ordinary rectifier diodes. High reverse breakdown voltage allows use in antenna-line switching, PIN attenuator ladders, and protection circuits handling substantial RF power. Typical applications include RF antenna switch modules, transmit/receive switching in wireless transceivers, RF attenuator networks in test equipment, and ESD/overvoltage clamping on antenna lines up to 3 GHz. When designing with BAP64 diodes, always provide adequate forward bias current: series resistance falls with increased forward current, so attenuation accuracy and linearity depend directly on the bias network. Verify the suffix-specific breakdown voltage against your worst-case RF peak voltage. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes not found in a single manufacturer datasheet.
BAP64-03,115 - 175V Silicon PIN Diode SOD-323 | NXP
The NXP BAP64-03,115 is a high-voltage silicon PIN diode designed as a current-controlled RF resistor, rated for 175 V reverse voltage, 100 mA forward current, and 500 mW power dissipation, housed in a leaded SOD-323 surface-mount package. It exhibits a very low diode capacitance of 0.35 pF maximum and a low forward resistance of 0.7 ohm typical, making it optimized for RF attenuator and RF switch circuits. A PIN diode is a special class of diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. In the RF domain, this intrinsic layer makes the device behave like a current-controlled resistor at RF frequencies while presenting low capacitance when reverse-biased. PIN diodes sit within the broader hierarchy of RF semiconductors: discrete diodes -> RF diodes -> PIN diodes, and are fundamental building blocks of variable attenuators, RF switches, phase shifters, and limiter circuits in wireless and instrumentation systems. Key features of the BAP64-03 include high reverse voltage of 175 V, low diode capacitance of 0.35 pF, low forward resistance of 0.7 ohm at rated current, and low series inductance thanks to the compact SOD-323 outline. These parameters directly translate into low insertion loss, high isolation, and low distortion in RF signal-path designs, particularly at VHF through microwave frequencies where stray capacitance and package parasitics dominate performance. Architecturally, the BAP64-03 uses a silicon vertical PIN structure engineered for a wide intrinsic region, which raises the carrier storage time and yields a more linear resistance-versus-current transfer characteristic than a conventional PN junction diode. This makes it well suited for precise, current-controlled attenuation in AGC and gain-control loops. Typical applications include RF attenuators, antenna-switch modules, VCO tuning circuits, and RF protection/limiting circuits in wireless infrastructure, test equipment, and professional communication radios. Designers should note the forward-current-to-resistance relationship: RF resistance is controlled by DC bias current, so bias network design determines distortion and control range. Note that NXP has marked the BAP64-03 as End of Life, so new designs should evaluate drop-in alternatives. This page adds value beyond the datasheet by compiling distributor pricing, drop-in alternatives, lifecycle status, and practical design notes in one place.
BAP64-05-TP - 175V Dual PIN Diode 3GHz SOT-23 | MCC
The Micro Commercial Components (MCC) BAP64-05-TP is a dual silicon PIN diode in a common-cathode configuration, rated 175 V reverse voltage, 100 mA forward current and 250 mW power dissipation, housed in a 3-pin SOT-23 surface-mount package. It is designed as a current-controlled RF resistor for RF attenuators and RF switches operating up to 3 GHz. A PIN diode is a semiconductor diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. Unlike a standard PN junction diode, the intrinsic layer gives the PIN diode a controllable resistance under forward bias and very low capacitance under reverse bias, making it the preferred switching and variable-resistance element in the RF front-end hierarchy of antennas, transceivers and test equipment. Key features include very low diode capacitance (0.35 pF typical at 20 V reverse bias, 1 MHz), low diode forward resistance for low insertion loss, and low series inductance for minimal parasitic impact in high-frequency layouts. The dual common-cathode arrangement (anode-cathode-anode pinning: pin 1 anode, pin 2 common cathode, pin 3 anode) simplifies shunt/series attenuator topologies such as T-bridged and Pi attenuator networks. Architecturally, the device is a silicon epitaxial PIN structure in an epoxy package meeting UL 94 V-0 flammability classification, with moisture sensitivity level 1 and a matte tin-plated, lead-free finish. Operating junction temperature spans -65 C to +150 C. As frequency rises, the stored charge in the intrinsic layer keeps the diode impedance linear and resistive, which is why this part stays usable to 3 GHz. Typical applications include RF antenna switch matrices, step and variable RF attenuators in cellular and broadband equipment, transmit/receive switching in RF front ends, and protect/bias switching circuits in RF instrumentation. Design consideration: because the PIN diode is a current-controlled resistor, RF performance depends directly on the forward bias current source quality - use a stable, low-noise DC bias network and adequate DC-blocking capacitors to isolate RF from the control path. This page synthesizes distributor pricing, drop-in alternatives, pinout detail, and practical design notes not found in a single manufacturer datasheet.
BAP64-05W,115 - Dual PIN Diode 100V SC-70 | NXP
The NXP Semiconductors BAP64-05W,115 is a dual silicon PIN diode pair in common cathode configuration, rated 100 V reverse voltage, 100 mA forward current and 240 mW power dissipation, housed in a 3-pin SC-70 (SOT323) surface-mount package for RF switching and attenuation to 3 GHz. A PIN diode is a type of radio-frequency semiconductor diode with a wide, lightly doped intrinsic (I) layer sandwiched between P-type and N-type regions. This intrinsic layer gives the PIN diode a current-controlled resistance characteristic at RF frequencies: at high frequency it behaves as an almost pure resistor whose value is set by the DC forward bias current, while blocking when reverse biased. Within the diode family hierarchy, PIN diodes sit alongside switching and rectifier diodes as RF signal-path elements rather than power-conversion devices. Key features of the BAP64-05W include high-voltage, current-controlled RF resistance, low diode capacitance for minimal insertion loss in off-state, low forward resistance for low on-state insertion loss, and low series inductance thanks to the compact SC-70 outline. Two planar PIN diodes share a common cathode, allowing series/shunt attenuator and SPDT switch topologies from a single package. According to the NXP datasheet, the device is specified for applications up to 3 GHz. Architecturally, the planar PIN structure provides low minority-carrier lifetime effects suited to RF attenuation, where the diode operates as a linear RF resistor under forward bias. The common-cathode pairing halves board area versus two discrete SOD-323 parts and keeps parasitic inductance symmetrical, improving attenuator flatness across the band. Typical applications include RF attenuator stages in wireless infrastructure, antenna switch modules, RF AGC circuits in receivers, and VSWR-protection switching in transmitters. The 100 V rating gives ample margin in 50-ohm systems with high RF swing. Design consideration: the RF resistance is set by forward bias current, so bias networks must be isolated from the RF path with chokes or high-value resistors to preserve linearity. This page synthesizes distributor pricing tiers, drop-in alternative comparisons, and practical design notes not found in the manufacturer datasheet alone.
BAP65-02,115 - 30V 100mA RF PIN Diode SOD-523 | NXP
The NXP Semiconductors BAP65-02,115 is a silicon planar PIN diode for RF attenuator and switching applications, rated 30V reverse voltage, 100 mA forward current and 715 mW total power dissipation, housed in the ultra-small SOD-523 surface-mount plastic package (ordering suffix ,115). Its maximum diode capacitance is 0.9 pF and its low forward resistance of approximately 1 ohm minimizes insertion loss in RF signal paths. A PIN diode is a silicon diode with an intrinsic (undoped) semiconductor layer sandwiched between the P-type and N-type regions. Under forward bias, stored carriers in the intrinsic layer make the device behave as a current-controlled RF resistor; under reverse bias it acts as a small, nearly constant capacitance. This combination makes PIN diodes the standard control element in RF switches, step attenuators, AGC circuits and transmit/receive paths, sitting within the broader hierarchy of diodes -> RF diodes -> discrete semiconductors. Key features include low diode capacitance (0.9 pF max), low forward resistance (about 1 ohm, for low RF loss), very low series inductance from the SOD-523 leadframe, and high-voltage, current-controlled behavior suited to linear attenuator designs. NXP characterizes the BAP65-02 series specifically as a series diode for mobile communication transmit/receive switches. Architecturally, the planar PIN structure provides a thick intrinsic region whose carrier lifetime supports RF switching up into the GHz range while maintaining a clean, low-Q capacitance in the off state, which improves switch isolation and attenuator linearity. Typical applications include RF attenuator and switch circuits in mobile communication handsets, transmit/receive switching in wireless modules, and AGC/variable-attenuator functions in RF front ends. Note: this part is NOT RECOMMENDED FOR NEW DESIGNS per NXP documentation; new designs should evaluate the current-generation alternatives listed on this page. Design consideration: RF performance depends strongly on bias network layout - keep the RF choke and DC-blocking capacitors close to the diode and place ground vias directly at the SOD-523 pads to exploit the very low series inductance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BAP65-03,115 - RF PIN Diode 30V 100mA SOD-323 | NXP
The NXP BAP65-03,115 is a silicon PIN diode designed as a current-controlled RF resistor for RF switch and attenuator applications, rated for 30 V reverse voltage, 100 mA forward current, and 500 mW power dissipation in a 2-pin SOD-323 (SC-76) surface-mount plastic package. A PIN diode is a semiconductor device with a wide, lightly doped intrinsic layer sandwiched between P-type and N-type regions. At RF frequencies, its forward-biased resistance varies linearly with DC bias current, making it behave as a current-controlled RF resistor. This property places PIN diodes within the broader diode family alongside rectifier, Schottky, and varactor diodes, and makes them essential elements in RF front-end design for switching, attenuating, and phase-shifting signal paths. Key features of the BAP65-03 include a very low diode capacitance of 0.9 pF, a low forward resistance of 0.35 ohm for minimal insertion loss, and very low series inductance due to the compact SOD-323 package. These parameters combine to give low loss and high isolation in RF switch circuits, and the planar construction supports the high breakdown voltage needed for demanding RF front ends. Architecturally, the device uses NXP's planar silicon PIN process. The thick intrinsic layer yields a nearly constant series resistance across a wide current range and a sharp transition between the off-state (dominated by the 0.9 pF capacitance) and the on-state (dominated by the 0.35 ohm resistance), which is precisely the behavior required for SPDT and SPDT-cascaded antenna and filter switching networks. Typical target applications include RF switch modules for wireless transceivers, antenna switching in cellular and ISM-band systems, RF attenuators, and protection or bypass switching in front-end modules. The AEC-Q101 qualification of the ,115 ordering code further supports automotive-connected RF subsystems. A key design consideration is bias current: the RF resistance is set by the DC forward current, so the bias network must be stiff and filtered to prevent RF leakage into the control line. Note also that this part is flagged End-of-Life / not recommended for new designs by NXP. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BAP65-05,215 - Dual PIN Diode 30V SOT-23 RF Switch | NXP
The NXP Semiconductors BAP65-05,215 is a dual-element silicon PIN diode in common cathode configuration, rated 30 V reverse voltage, 100 mA maximum forward current and 250 mW power dissipation, housed in a 3-pin SOT-23 (TO-236AB) surface-mount package. It functions as a high-voltage, current-controlled RF resistor for RF switch and attenuator circuits, with low diode capacitance of 0.425 pF at 20 V reverse bias (1 MHz) and low forward resistance for minimal insertion loss. A PIN diode is a silicon semiconductor device with a wide, lightly doped intrinsic layer between P and N regions. In RF systems, it behaves as a current-controlled resistor: under forward bias its RF resistance drops to a few ohms, while under reverse bias it acts as a small, nearly lossless capacitor. This makes PIN diodes the preferred switching and variable-attenuation element in RF front ends, where mechanical relays or FETs would introduce unacceptable distortion or capacitance. Key features of the BAP65-05 include two elements sharing a common cathode, enabling series-SPDT and series-shunt switch topologies in a single 3-pin package; low diode capacitance that minimizes off-state feedthrough at VHF through microwave frequencies; and low forward resistance that reduces on-state insertion loss. The 30 V breakdown rating supports RF switch stacks in higher-voltage PA bias switching and TDD radios. Because both diodes share one die-level structure, RF designers achieve matched on-resistance and capacitance between series and shunt arms, improving switch isolation symmetry. The SOT-23 footprint keeps parasitic inductance low, and the device is supplied in Tape & Reel (suffix ,215) for automated pick-and-place assembly. Typical applications include antenna RF switch matrices, transmit/receive switching in wireless transceivers, RF attenuator networks, and broadband RF switching in test instrumentation. Design consideration: PIN diode carriers (stored charge) determine switching speed and low-frequency distortion; keep forward bias current sufficiently high for the RF signal amplitude to avoid intermodulation. This page synthesizes distributor pricing, drop-in alternative analysis, pinout data, and practical RF design notes not found in the manufacturer datasheet.
BAP70 - 50V Silicon PIN Diode SOD-523 | NXP | RF Attenuator
The NXP Semiconductors BAP70 (BAP70-02) is a high-voltage, current-controlled silicon PIN diode rated for 50 V reverse voltage and 100 mA forward current with 415 mW power dissipation, housed in an ultra-small 2-pin SOD-523 surface-mount plastic package. It is optimized as a current-controlled RF resistor for attenuator and switching circuits. A PIN diode is a type of diode with a wide, lightly doped intrinsic semiconductor region sandwiched between p-type and n-type regions. At RF and microwave frequencies, this intrinsic layer makes the diode behave as a current-controlled resistor, which is why PIN diodes form the core of RF attenuators, RF switches, and AGC (automatic gain control) circuits. Within the signal-chain hierarchy, the BAP70 belongs to the discrete semiconductor family: PIN diode -> RF diode -> diode -> discrete component. Key features of the BAP70 family include high reverse voltage capability (50 V), very low diode capacitance at reverse bias, and very low series inductance thanks to the compact SOD-523 package geometry. These attributes minimize parasitic effects in the RF path, preserving insertion-loss performance at VHF, UHF, and microwave frequencies. The BAP70-02 variant is qualified to the AEC-Q101 automotive standard, making it suitable for automotive-grade RF designs. The planar PIN structure provides a well-controlled series resistance versus forward current characteristic, allowing designers to linearly control attenuation by varying DC bias current. Because the RF resistance spans a wide range with modest current, a single device can serve in continuously variable attenuators, switchable attenuator pads, and antenna tuning networks. Typical applications include RF attenuators in satellite (SAT) television front ends, car radio antenna tuning and AGC circuits, and general RF/microwave gain-control stages where a voltage-controlled resistance is required. A key design consideration is that the RF series resistance is strongly bias-current dependent; layout must keep the bias network decoupled from the RF path to prevent signal injection into the control line. This page synthesizes distributor data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with pricing and lifecycle freshness as of 2026-09-14.
BAP70-02 - Silicon PIN Diode 50V 100mA SOD-523 | NXP Semiconductors
The NXP Semiconductors BAP70-02 is a silicon planar PIN diode designed as a high-voltage, current-controlled RF resistor for attenuator and switching applications up to 1 GHz, housed in an ultra-small 2-pin SOD-523 surface-mount package. It is rated for 50 V reverse voltage, 100 mA continuous forward current, and 415 mW power dissipation, and is qualified per AEC-Q101 for automotive use. A PIN diode is a special type of diode with a wide, lightly doped intrinsic semiconductor layer sandwiched between P-type and N-type regions. At RF frequencies, the forward-biased intrinsic layer behaves as a current-controlled resistor, making PIN diodes the preferred choice for RF switches, step attenuators, and variable-gain circuits where ordinary PN junction diodes would introduce unacceptable harmonic distortion. Within the signal-chain hierarchy, the BAP70-02 belongs to the RF PIN diode family, a subcategory of discrete RF diodes used in front-end modules, gain-control networks, and antenna-line switching. Key features include high breakdown voltage providing robust headroom for antenna-line switching, low diode capacitance minimizing insertion loss and off-state feedthrough, and very low series inductance enabled by the compact SOD-523 footprint. The AEC-Q101 qualification supports automotive RF systems such as car radio and satellite radio tuners. Technically, the BAP70-02 is a planar PIN diode whose controlled intrinsic-layer resistance varies smoothly with forward bias current, allowing linear, low-distortion attenuation when DC bias current is adjusted. Ordinary PN diodes cannot match this property because their charge storage and junction behavior create distortion in RF switching duty. Typical applications include RF attenuators in satellite (SAT) TV LNB and tuner modules, car radio front ends, and UHF/VHF switching circuits up to 1 GHz, per the NXP product page. Design consideration: bias the diode with a well-defined DC return path (RF choke or resistor network); PIN diode RF resistance is set by forward current, not voltage, so bias network design directly determines attenuation accuracy. This page synthesizes distributor pricing, drop-in alternative guidance, and practical bias-layout design notes not found in the manufacturer datasheet.
BAP70-03,115 - 50V RF PIN Diode SOD-323 | NXP Semiconductors
The NXP Semiconductors BAP70-03,115 is a planar silicon PIN diode rated for 50V reverse voltage, 100 mA forward current and 500 mW power dissipation, housed in a SOD-323 (SC-76) small SMD plastic package with a maximum diode capacitance of 0.25 pF and a series resistance of 77 ohm. A PIN diode is a semiconductor device with a wide, lightly doped intrinsic region sandwiched between P-type and N-type regions. At RF frequencies, the intrinsic layer makes the device behave as a current-controlled resistor, a property that ordinary PN junction diodes lack. Within the power-management and signal-chain hierarchy, PIN diodes belong to the RF diode family alongside varactors and Schottky RF diodes, and they are the standard control element for RF switches, attenuators and AGC circuits. Key features of the BAP70-03 include its role as a high-voltage, current-controlled RF resistor for attenuators, very low diode capacitance (0.25 pF max), and very low series inductance thanks to the compact SOD-323 outline. These characteristics minimize parasitic insertion loss and preserve signal integrity in VHF/UHF through microwave front-ends up to and beyond the 1 GHz region. Technically, the planar construction yields a thick intrinsic layer, which raises breakdown voltage and improves linearity at high RF swings while keeping the off-state capacitance low. Under forward bias, the stored charge in the I-region produces a low, controllable series resistance; the 77 ohm on-state resistance value defines the attenuation range achievable in PI and T-pad attenuator networks. The 50 V reverse rating provides headroom for high-level RF signals such as satellite IF and LNB bias paths. Typical applications are RF attenuators in satellite (SAT) television receivers, TV tuner AGC stages, and car radio front-ends, where the diode sets a precise attenuation under current control. Design consideration: bias current directly sets RF resistance, so a stable, low-noise DC bias network (temperature-compensated where needed) is essential for repeatable attenuation; also verify junction temperature against the -65 C to +150 C range given the 500 mW dissipation limit. Note: NXP marks this part as NOT RECOMMENDED FOR NEW DESIGNS. This page adds value by consolidating the datasheet parameters, lifecycle status, and drop-in alternative guidance that distributor listings present only piecemeal.
BAP70-04W,115 - 50V Dual Series PIN Diode | NXP Semiconductors
The NXP Semiconductors BAP70-04W,115 is an automotive-qualified silicon PIN diode containing two planar PIN diodes connected in series, rated for 50 V reverse voltage, 100 mA forward current and 260 mW power dissipation in a 3-pin SOT-323 (SC-70) surface-mount plastic package. Its very low diode capacitance of 0.3 pF at 20 V, 1 MHz and low series resistance of 1.9 ohm at 100 mA, 100 MHz make it a classic high-voltage current-controlled RF resistor. A PIN diode is a semiconductor device with a lightly doped intrinsic layer between P and N regions. In RF systems, when forward biased it behaves as a nearly linear current-controlled resistor, and when reverse biased it acts as a small, nearly lossless capacitor. This property places the PIN diode at the heart of RF switches, step attenuators, AGC circuits and RF limiter networks within the broader hierarchy of RF discrete components and small-signal switching diodes. Key features include the series pair configuration, which doubles the effective breakdown voltage for attenuator stacks, low capacitance that preserves isolation at high frequencies, a low forward voltage drop for efficient biasing, and AEC-Q100 automotive qualification indicated by the manufacturer product data. The compact SOT-323 body measures only 2 mm x 1.25 mm x 0.95 mm with a 1.3 mm pitch, enabling dense PCB layouts in RF modules. The planar silicon construction delivers consistent RF resistance versus forward-current characteristics, which is essential for predictable attenuation steps in PIN-diode attenuator ladders. Junction temperature is specified from -65C to +150C, supporting harsh automotive and industrial environments. Typical applications include RF attenuators for receiver AGC control, high-voltage RF switching stages, antenna switching in mobile and automotive radio front-ends, and current-controlled RF resistors in test instrumentation. Design consideration: bias current sets the RF resistance; ensure the driver can supply the required forward current (up to 100 mA) and keep bias networks isolated from the RF path with high-impedance chokes or resistors. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BAP70-04W,115 - Dual Series PIN Diode 50V SC-70 | NXP
The NXP Semiconductors BAP70-04W,115 is a dual-series silicon PIN diode with a 50V peak reverse voltage, 100 mA maximum forward current, and 0.3 pF diode capacitance at VR = 20V (1 MHz), housed in the SOT-323 (SC-70) surface-mount plastic package. Two planar PIN diodes are connected in series inside a single small-outline package, providing a symmetric, low-capacitance switching element for RF signal paths. A PIN diode is a semiconductor diode with an intrinsic (undoped) layer sandwiched between P-type and N-type regions. Under forward bias it behaves as a nearly linear RF resistor whose resistance is controlled by DC forward current; under reverse bias it presents a very small capacitance to the RF path. This current-controlled resistance property makes PIN diodes the standard choice for RF switching, attenuation and gain control in the signal chain between antenna and transceiver, where conventional Schottky or junction diodes would add unwanted distortion. Key features of the BAP70-04W include low diode capacitance (0.3 pF at 20V reverse bias), low series resistance in the conductive state for insertion-loss control, high breakdown voltage of 50 V, and 260 mW total power dissipation in the SOT-323 package. The series pair halves the effective capacitance relative to a single diode, which is important for wideband attenuator ladders and multi-throw RF switches operating at high frequencies. Technically, the planar construction delivers a fast carrier response and a low forward voltage, supporting high switching speed in bias-controlled networks. The pair arrangement simplifies pi/T attenuator topologies and reduces component count and placement cost in dense RF modules. Typical applications include RF attenuators (voltage-controlled and stepped), antenna and filter switching networks, high-voltage current control circuits, and RF resistor functions in transceiver front ends for cellular, WLAN and other wireless systems. Design consideration: set the forward bias current according to the required RF resistance; distortion in a PIN switch decreases as forward current increases, so trade bias current against power budget. Always verify reverse-bias headroom against the 50 V rating in switched-line applications. This page synthesizes distributor pricing, drop-in alternatives, pinout data and practical design notes not found in the manufacturer datasheet.
BAR46A - Small Signal Schottky Diode SOT-23 | STMicroelectronics
The STMicroelectronics BAR46A is a small signal Schottky diode in a 3-pin SOT-23 surface-mount package, designed as a high-voltage Schottky rectifier suited for SLIC (Subscriber Line Interface Circuit) protection during card insertion operations. The device belongs to ST's BAR46 product family, which also includes the BAR46 base version and the BAR46AFILM automotive-grade film variant. A small signal Schottky diode is a metal-semiconductor junction rectifier that replaces the conventional P-N junction with a Schottky barrier, eliminating reverse-recovery charge. Within the power-discrete hierarchy it sits at the diode -> rectifier -> Schottky rectifier -> discrete semiconductor level, and it is commonly used wherever a low forward voltage drop and negligible switching losses matter more than ultra-high blocking voltage. Per the STMicroelectronics datasheet, the BAR46A's key benefits are very small conduction losses, negligible switching losses, and a low forward voltage drop in a compact surface-mount device (SMD). Because there is no reverse recovery, switching power loss is essentially zero, which makes the part attractive in switching and line-protection circuits operating at moderate currents. The high reverse-voltage rating differentiates the A version from the standard BAR46 in the same family. The BAR46A architecture uses a high-barrier Schottky metal system that sustains elevated repetitive reverse voltage while keeping leakage current low for a small-signal Schottky. This is why ST positions the part specifically for telecommunication line-card SLIC protection: during hot insertion of the line card, the SLIC rings/line drivers see voltage transients that the Schottky clamps and rectifies without introducing switching spikes. Typical applications include SLIC and line-card protection in telecom exchange equipment, low-power output rectification in auxiliary switching supplies, reverse-polarity and free-wheeling protection, and small-signal detection and clamping circuits. The SOT-23 package allows dense automated assembly. In design, verify the reverse-leakage increase with junction temperature; Schottky leakage roughly doubles every 10C, so derate for hot environments. Confirm the A-version voltage rating matches your worst-case line transient before drop-in substitution from the BAR46 base grade. This page synthesizes distributor listings, datasheet-derived specifications, drop-in alternatives, and design guidance not consolidated in the manufacturer datasheet alone.
BAR46AFILM - 100V 150mA Dual Schottky Diode Array | STMicroelectronics
The STMicroelectronics BAR46AFILM is a small-signal dual common-anode Schottky diode array rated for 100 V repetitive reverse voltage and 150 mA DC forward current, housed in a 3-pin SOT-23 (TO-236-3 / SC-59) surface-mount package with a maximum forward voltage of 450 mV and an operating junction temperature up to 150 C. A Schottky diode is a semiconductor diode formed by a metal-semiconductor junction rather than a PN junction. This structure eliminates reverse-recovery charge, giving Schottky devices low forward voltage, fast switching, and low switching losses. Within the power-management component hierarchy, the BAR46AFILM belongs to the diode-array family, a subcategory of rectifiers within discrete semiconductors, and it integrates two diodes sharing a common anode in one SOT-23 footprint to save board space and BOM positions. Key features include the 100 V reverse rating, which is unusually high for a small-signal Schottky and allows use on 48 V-class rails with margin; dual common-anode integration that replaces two discrete SOD-123 diodes; a typical forward voltage of about 450 mV at moderate currents, reducing conduction loss; and a 150 C maximum operating temperature suited to industrial environments. Technically, the BAR46AFILM uses STMicroelectronics Schottky barrier technology tuned for low leakage at high reverse bias. The main trade-off of the high-voltage rating is a moderately higher forward voltage and leakage than lower-voltage Schottky arrays such as the BAT54 family, so designers should verify thermal behavior in high-temperature, high-duty-cycle circuits. Typical applications include SLIC (Subscriber Line Interface Circuit) protection in telecommunication equipment, reverse polarity and battery protection on 12 V to 48 V rails, and high-speed freewheeling or clamping in signal and low-power converter circuits. For design, keep in mind that leakage current roughly doubles every 10 C; at elevated ambient temperatures the effective conduction loss may rise, so derate the 150 mA current when operating above 75 C ambient. This page synthesizes distributor pricing, drop-in alternatives, pinout data, and practical design notes in one place, going beyond what the manufacturer datasheet alone provides.
BAS316,115 - 100V 250mA High-Speed Switching Diode SOD-323 | Nexperia
The Nexperia BAS316,115 is a high-speed switching diode rated at 100 V repetitive peak reverse voltage and 250 mA average forward current, encapsulated in a compact 2-lead SOD-323 (SC-76) surface-mount package. It features a typical forward voltage of 1.25 V at 250 mA, an ultra-fast reverse recovery time of 4 ns, and a non-repetitive peak forward surge current of 4 A, making it a strong fit for high-frequency rectification, clamping, and logic-level switching in space-constrained designs. A high-speed switching diode is a small-signal PN-junction device optimised for fast transition between conducting and blocking states. In the signal-chain taxonomy, the BAS316 family sits within switching diodes -> small signal diodes -> discrete diodes -> discrete semiconductors. The defining metric is reverse recovery time (trr), which determines how quickly the diode stops conducting when forward-biased current is interrupted; faster trr reduces switching losses, EMI, and logic-level glitches in fast digital and RF circuits. Key differentiating specifications include the 4 ns trr (measured per IF=IR=10 mA, RL=100 ohm, IR(meas)=1 mA per the BAS16 series datasheet), a maximum continuous reverse voltage of 100 V (equivalent to the repetitive peak reverse voltage rating), and a power dissipation of 400 mW. Compared to general-purpose rectifiers such as the 1N4148 in glass or LL4148 in MiniMELF, the BAS316 delivers equivalent switching speed in a much smaller PCB footprint, and it is AEC-Q101 qualified for automotive-grade reliability. The BAS316 is fabricated in planar technology, giving it tightly controlled electrical parameters, low leakage (IR max 0.5 uA at VR=80 V), and excellent high-temperature stability across the -65 C to +150 C operating ambient range. The SOD-323 package is a JEDEC-standard outline with a typical land pattern that supports automated pick-and-place assembly and reflow soldering. Typical applications include high-speed rectification in switch-mode power supplies (SMPS), freewheeling/steering diodes for inductor loads, reverse-polarity protection on USB and battery interfaces, logic-level shifting and clamping in digital control circuits, and general-purpose RF detection at low frequencies. Designers also use it in sample-and-hold, ring demodulator, and ESD-clamp circuits where 4 ns trr is critical. A key design consideration is the trade-off between trr and forward voltage drop: the BAS316 prioritises switching speed (4 ns) over low VF, so for high-current rectification above 250 mA a Schottky or standard rectifier is preferred. Always observe the 400 mW power dissipation limit and provide adequate thermal copper on the SOD-323 pads. This page synthesises distributor pricing, drop-in alternatives in the SOD-323 footprint, and practical design notes not consolidated on the manufacturer datasheet, helping engineers accelerate selection and second-source decisions.
BAS4005E6327 - 40V 120mA Schottky Diode Array | Infineon
Infineon BAS4005E6327 is a 40 V, 120 mA Schottky diode array configured as one pair of common-cathode rectifiers in a SOT-23-3 (TO-236-3 / SC-59) surface-mount package. The device integrates two low-forward-voltage Schottky diodes in a single small-outline package, providing circuit designers with a compact, drop-in solution for clamping, free-wheeling, rectification, and reverse-polarity protection tasks. The diodes share a common cathode pin, which simplifies PCB routing when both diodes must reference the same return node. A Schottky diode (also called a hot-carrier diode) is a semiconductor device formed by a metal-semiconductor junction rather than a P-N junction. Compared to standard silicon rectifiers, Schottky diodes offer a lower forward voltage (typically 0.3-0.4 V versus 0.6-0.7 V) and negligible reverse-recovery time, which translates into higher switching efficiency, lower power dissipation, and suitability for high-frequency applications where conventional diodes would introduce unacceptable switching losses. The product hypernym hierarchy is: Schottky diode -> rectifier diode -> diode -> discrete semiconductor -> electronic component. The BAS4005E6327 delivers up to 120 mA of continuous DC forward current, a repetitive peak reverse voltage of 40 V, and a forward voltage designed to be minimal at low currents, making it especially useful in low-voltage, energy-constrained designs such as portable and battery-powered electronics. The compact SOT-23-3 footprint enables dense PCB layouts for multi-channel designs requiring multiple parallel clamping or OR-ing diodes. Internally, each diode uses a metal-silicon Schottky barrier that minimizes stored charge and reverse-recovery time, so the part is well-suited to high-speed switching applications. The shared-cathode topology allows the array to be used as a dual half-wave rectifier or as two independent low-loss signal-path clamps with a common return. Typical applications include reverse-polarity protection on USB and battery-powered ports, signal clamping in low-voltage data lines, free-wheeling diodes for small relays and inductors, voltage doubling in charge-pump circuits, low-current rectification in switching power supplies, and OR-ing diodes in dual-power redundant systems. When designing with this part, ensure that the forward current rating (120 mA DC) is not exceeded under worst-case load and thermal conditions, and account for the SOT-23-3 power dissipation capability in your thermal budget. The common cathode pin must be tied to the lowest potential in the circuit to keep both diodes correctly biased. This page synthesizes distributor stock and pricing from DigiKey, Mouser, and Octopart, drop-in compatible alternatives from the same Infineon family, and practical PCB design notes not found in the bare manufacturer datasheet.
BAS4005E6327HTSA1 - 40V 120mA Schottky Diode Array | Infineon
The Infineon BAS4005E6327HTSA1 is a silicon Schottky diode array configured as one common-cathode pair, rated at 40 V reverse voltage and 120 mA average forward current, housed in a 3-pin SOT-23 (PG-SOT23, also designated TO-236-3 / SC-59) surface-mount package. Built on Infineon's planar Schottky process, the part delivers a typical forward voltage drop of approximately 1 V at 100 mA and a low reverse leakage, making it well suited for ultra-high-speed switching applications. A Schottky diode is a majority-carrier semiconductor device formed by a metal-semiconductor junction rather than the PN junction used in conventional diodes. This construction eliminates minority-carrier charge storage, which is why Schottky diodes switch far faster than silicon rectifier diodes and exhibit a lower forward voltage drop (typically 0.3-0.5 V at low current). The trade-off is a higher reverse leakage current and a lower maximum reverse-voltage rating, which is why Schottky diodes are typically deployed in low-voltage, high-speed signal paths and DC-DC converters rather than in mains rectification. The BAS4005 series sits in the hierarchy Schottky diode -> rectifier diode -> discrete semiconductor -> electronic component. Key features of the BAS4005E6327HTSA1 include a 40 V repetitive peak reverse voltage (VRRM), a 120 mA average forward current (IF(AV)), a very low reverse recovery time suited to multi-MHz switching, and compliance with AEC-Q101 automotive qualification. The common-cathode configuration in the SOT-23 footprint provides two independent Schottky junctions sharing a single cathode pin, enabling OR-ing, voltage clamping, or full-wave rectification in a compact 3-pin outline. The device is intended for general-purpose rectification, signal demodulation, high-speed switching, voltage clamping, high-level detecting, and mixing in both consumer and automotive designs. Its low forward voltage preserves signal margin in low-voltage analog circuits and protects downstream ICs from inductive kickback. When designing with this part, observe the thermal derating shown on the IF = f(TS) curve: at 120 mA the allowed solder-point temperature limits the practical ambient temperature range, and the SOT-23 thermal resistance of approximately 357 C/W on a minimal pad means substantial copper area is required at higher duty cycles. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BAT41 - 100V 100mA Schottky Diode DO-35 | STMicroelectronics
The STMicroelectronics BAT41 is a 100 V small-signal Schottky barrier diode rated for 100 mA forward current, furnished in a DO-35 glass axial through-hole package with a low-capacitance die optimized for fast switching. A Schottky diode is a metal-to-silicon rectifier that conducts with a substantially lower forward voltage than a standard PN-junction silicon diode, and it stores almost no minority-carrier charge, so it switches between conducting and blocking states extremely quickly. Within the power-management hierarchy, the BAT41 sits in the small-signal switching diode class: it is not a power rectifier but a signal-path and low-current switching element used across analog, audio, and digital boards. Key features include the 100 V reverse voltage rating, which is unusually high for a small-signal Schottky; a low forward turn-on voltage that minimizes signal loss in detection and clamping circuits; and integrated guard-ring protection against excessive voltage events such as electrostatic discharge. According to STMicroelectronics, the series is specially suited for switching-mode operation with low reverse leakage (IR) losses. Technically, the BAT41 uses a metal-silicon junction with a PN guard ring, yielding very low forward and reverse recovery times and low junction capacitance. This combination makes it a common substitute for germanium diodes in soft-clipping and signal-detection roles, since its conduction curve is softer than standard silicon but with better temperature behavior and availability. Typical applications include audio clipping and waveshaping in guitar pedals and reverb circuits, reverse-polarity and ESD protection clamps on signal lines, RF and video detectors, and general-purpose low-current rectification or ORing of low-voltage rails. Design consideration: the DO-35 axial package dissipates little power; keep average forward current well below 100 mA and derate above approximately 25 C ambient per the manufacturer datasheet derating curve. For power rectification above roughly 0.5 A, choose a larger Schottky such as the 1N5817 instead. This page synthesizes verified distributor data, drop-in alternatives across manufacturers, and practical design guidance not consolidated in any single datasheet.
BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay
The Vishay General Semiconductor BAT41-TAP is a small signal Schottky barrier diode rated 100 V reverse voltage and 100 mA average forward current in a through-hole DO-204AH (DO-35) axial glass package, with a non-repetitive peak forward current of 750 mA. A small signal Schottky diode is a two-terminal semiconductor rectifier that uses a metal-to-silicon barrier junction instead of a PN junction. Within the component hierarchy it sits under diode, rectifier, discrete semiconductor. Because majority carriers conduct across the barrier, Schottky diodes exhibit very low turn-on voltage and essentially zero reverse recovery time, which makes them the preferred choice where switching speed and low IR losses dominate over reverse leakage. Key features of the BAT41-TAP include its low turn-on voltage, high breakdown voltage (100 V, unusually high for a small-signal Schottky), and extremely fast switching with low forward and reverse recovery times. The die is protected by a PN junction guard ring against excessive voltage events such as electrostatic discharge (ESD), improving ruggedness in production handling and field environments. Technically, the device is a general purpose metal-to-silicon Schottky designed for switching-mode operation with low IR losses. The guard-ring termination stabilizes the leakage behavior across temperature and supports repetitive fast switching cycles without degradation. The DO-35 glass body provides hermetic sealing, contributing to long-term reliability compared with molded plastic axial packages. Typical applications include audio signal clipping and asymmetric distortion circuits in guitar pedals, polarity protection and OR-ing of low-current rails, high-frequency signal detection and clamping, and general purpose fast-switching duties in consumer and industrial equipment. AEC-Q101 qualification is available in the family (part number on request), extending suitability toward automotive designs. Design consideration: the Schottky trade-off is higher reverse leakage than silicon PN diodes, and leakage roughly doubles every 10C, so verify reverse power at maximum ambient temperature. Also note the 100 mA current ceiling - do not use it where rectifier-class parts are required. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, adding selection and cross-reference value for engineers and buyers.
BAT41-TR - 100V 100mA Schottky Diode DO-35 | Vishay
The Vishay BAT41-TR is a 100 V, 100 mA small-signal Schottky barrier diode with a low forward voltage drop of 450 mV maximum and a 750 mA peak surge current rating, packaged in the through-hole DO-204AH (DO-35) glass axial package supplied on tape and reel. A small-signal Schottky diode is a two-terminal semiconductor rectifier that uses a metal-to-silicon junction instead of a PN junction. Because majority-carrier conduction dominates, Schottky diodes exhibit a lower turn-on voltage and essentially zero reverse recovery time compared with standard silicon rectifier diodes, placing them high in the diode hierarchy: signal diode -> rectifier diode -> semiconductor discrete component. They are fundamental building blocks for switching-mode circuits, protection networks, and signal detection stages. The BAT41 series from Vishay General Semiconductor - Diodes Division features a low turn-on voltage combined with a high breakdown voltage, an unusual and valuable combination since most low-VF Schottky devices are limited to 40 V to 60 V ratings. The die is protected by a PN junction guard ring against excessive voltages such as electrostatic discharge (ESD), improving ruggedness in assembly and field conditions. Extremely fast switching with low forward and reverse recovery times makes the device specially suited for switching-mode operation with low IR losses. The metallurgical metal-semiconductor junction construction delivers a low junction capacitance, which supports high-frequency rectification, detector, and clipping/clamping functions. The glass DO-35 body provides a hermetic seal with good long-term stability, a benefit over plastic SMD alternatives in moisture-sensitive environments. Typical applications include small-signal rectification and switching in audio equipment (guitar pedals frequently use BAT41 diodes for clipping and switching stages), reverse-polarity protection of low-current supply rails, ESD and overvoltage clamping in sensitive analog nodes, and detector circuits in RF front ends. When designing with the BAT41-TR, keep the average forward current below the 100 mA rating and account for the relatively high reverse leakage of Schottky junctions at elevated temperature, which can affect bias points in precision analog circuits. This page synthesizes verified distributor data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.
BAT42 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
The STMicroelectronics BAT42 is a small-signal Schottky barrier diode rated for 30 V reverse voltage and 200 mA forward current, supplied in an axial-leaded DO-35 through-hole package with a very low turn-on voltage and fast switching behavior. According to the STMicroelectronics product page, the BAT42 is a general-purpose metal-to-silicon diode with integrated protection against excessive voltage such as electrostatic discharge. A Schottky diode is a semiconductor diode formed by a metal-to-semiconductor junction rather than a conventional PN junction, which gives it a lower forward voltage drop and essentially zero reverse recovery charge. Within the power-discrete taxonomy, the BAT42 belongs to the diode family, specifically small-signal Schottky rectifiers, sitting below power rectifiers in current capability and above RF detector diodes in robustness. Key features include the 30 V maximum repetitive reverse voltage, 200 mA average forward current, low forward turn-on voltage (distributor listings show approximately 400 mV class conduction, per digchip data), and fast switching suited to general-purpose high-speed circuits. A guard-ring PN-junction structure protects the junction against electrostatic discharge events, improving assembly-line robustness compared to unprotected small-signal Schottky dies. The metal-to-silicon barrier construction keeps switching losses low in clamping and steering roles. Technically, the BAT42's majority-carrier conduction eliminates reverse recovery, so trr-limited losses that plague fast-recovery PN diodes are absent. The DO-35 glass-bodied axial package provides excellent hermeticity and handles surge events listed around 4 A non-repetitive peak (per digchip summary), with an operating junction temperature up to 125 C. Typical applications include low-voltage rectification in small power supplies, reverse-polarity protection, freewheeling/clamping for relays and small inductive loads, and signal demodulation or detection circuits where the low forward drop improves low-level signal fidelity. When designing, derate forward current at elevated ambient temperature and respect the 30 V reverse limit with margin for transients. This page synthesizes cross-reference alternatives, distributor sourcing links, and practical design notes not consolidated in the manufacturer datasheet, giving engineers a single verifiable reference point.
BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay
The Vishay General Semiconductor BAT42-TAP is a small-signal Schottky barrier diode rated for 30 V reverse voltage and 200 mA average forward current, supplied in the axial-leaded DO-204AH (DO-35) glass package for through-hole assembly. The -TAP suffix denotes the ammo tape-and-reel packing format for automated insertion. A Schottky diode replaces the conventional P-N junction with a metal-semiconductor barrier, producing a very low turn-on voltage and near-zero reverse recovery time. Within the voltage regulator and rectifier family hierarchy, small-signal Schottky diodes such as the BAT42 serve as high-speed switching, freewheeling, polarity-protection, and detection elements in signal-level circuits. Key features include very low forward turn-on voltage compared to silicon junction diodes, extremely fast switching for high-frequency operation, and an integrated P-N junction guard ring that protects the metal-silicon junction against excessive voltage events such as electrostatic discharge. The Mouser listing also documents a surge current rating of 4.0 A (IFSM), giving robust tolerance for short-duration transient overloads. The DO-35 package is hermetically sealed glass, providing superior long-term reliability and moisture immunity versus many molded packages, and its axial leads support both wave soldering and hand assembly. Vishay also offers the BAT42 die in SOD-123 surface-mount form (BAT42W series) and MiniMELF variants, but this -TAP version targets legacy through-hole boards, repairs, and hobby prototypes. Typical applications include small-signal high-speed switching, polarity guard and reverse-battery protection, freewheeling clamps in low-current relay and motor-driver circuits, RF detection envelopes, and general-purpose rectification on 5 V and 12 V analog rails. Design consideration: because the BAT42-TAP is a small-signal part, verify that continuous load current stays at or below 200 mA and that surge energy remains within the 4 A IFSM envelope; for higher current, step up to BAT85-class or power Schottky parts. This page synthesizes verified distributor listings, cross-reference data, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
BAT42-TR - 30V 200mA Small Signal Schottky Diode | Vishay
The Vishay General Semiconductor BAT42-TR is a small signal Schottky diode rated 30 V reverse voltage and 200 mA average forward current, supplied in the axial through-hole DO-204AH (DO-35) glass package on tape and reel for automated assembly. A Schottky diode is a metal-to-silicon rectifier that stores far less charge than a standard PN-junction diode, giving it a very low forward turn-on voltage and extremely fast switching. Within the component hierarchy it sits under Schottky rectifier, then diode, then discrete semiconductor. These properties make the BAT42 family a staple general-purpose small-signal part in the discrete semiconductor portfolio. Key features of the BAT42-TR include very low turn-on voltage compared with standard silicon diodes, fast switching speed suited to high-frequency signal paths, and a PN junction guard ring that protects the die against excessive voltage events such as electrostatic discharges. The metal-to-silicon junction minimizes reverse recovery charge, so switching losses stay negligible even at high repetition rates. The glass DO-35 body provides hermetic sealing for long-term reliability in through-hole designs. According to the Vishay small signal Schottky diode datasheet (document 85660), the device is intended for general purpose applications, and AEC-Q101 qualified variants are available on request. The guard-ring ESD protection distinguishes it from unprotected small-signal Schottky types, improving assembly robustness. Reverse leakage remains in the microampere range at rated voltage and room temperature, an inherent trade-off of the Schottky barrier compared with a standard rectifier diode. Typical applications include signal clamping and detection circuits, reverse polarity and battery protection in portable equipment, high-frequency switching supplies and RF detector stages, and general board-level rectification where low forward drop saves headroom in low-voltage rails. When designing with the BAT42-TR, always verify the leakage-versus-temperature curve: Schottky reverse current roughly doubles every 10 degrees C, so hot environments derate the effective blocking margin below the 30 V rating. This page synthesizes distributor pricing and availability, drop-in cross-references, and practical design notes not consolidated in the manufacturer datasheet.