Diodos
Produtos (171)
SBRFP2M60SAFQ - 2A 60V Field-Plated SBR Diode, SMAF | Diodes Inc
The Diodes Incorporated SBRFP2M60SAFQ is a 60V, 2A field-plated Super Barrier Rectifier (SBR®FP) diode packaged in the low-profile SMAF surface-mount package. It is engineered for applications requiring ultra-low reverse leakage (blocking-mode) current, which directly translates into lower operating temperatures, higher efficiency, and increased system reliability compared to conventional Schottky diodes. The SBRFP2M60SAFQ suffix "Q" indicates AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing — making it suitable for automotive-grade designs. A Super Barrier Rectifier (SBR®) is a proprietary Diodes Incorporated power-rectifier technology that combines the low forward voltage drop of a Schottky diode with the low reverse leakage of a PN-junction rectifier. The SBRFP2M60SAFQ further integrates a field-plating process that suppresses reverse leakage at high temperatures, placing it within the discrete-semiconductor power-rectifier hierarchy: diode → rectifier → SBR/SBR-FP → surface-mount power device. Key features include a 60V repetitive peak reverse voltage (VRRM), 2A average rectified forward current (IF(AV)), low forward voltage drop (VF), and ultra-low reverse leakage. The device is supplied on 10,000-piece tape-and-reel in the SMAF package, which is footprint-compatible with industry-standard SMA packages while offering a lower profile. Typical applications include automotive body-electronics load-dump protection, freewheeling and DC-DC converter secondary rectification, battery-charging adapters, and polarity-protection circuits. The AEC-Q101 qualification makes it ideal for under-the-hood and cabin-electronics ECUs, LED drivers, and motor-control boards requiring automotive-grade change control. When designing with the SBRFP2M60SAFQ, observe the published thermal-resistance curve and ensure the PCB copper-pad area matches the recommended footprint for the desired current rating. The Q-suffix variant is the correct choice when automotive PPAP and change-control documentation are required by the OEM.
SBRFP3M60SAFQ - 60V 3A SBR Field Plated Rectifier SMAF | Diodes Inc
The Diodes Incorporated SBRFP3M60SAFQ is a 3 A, 60 V field-plated Super Barrier Rectifier (SBR® FP) housed in the compact, low-profile SMAF surface-mount package. Designed as a direct drop-in replacement for conventional Schottky and PN junction rectifiers, it delivers ultra-low forward voltage drop and ultra-low reverse leakage in blocking mode, lowering operating temperatures and increasing long-term system reliability in 12 V and 24 V automotive and industrial rails. What is a Super Barrier Rectifier? An SBR is a proprietary second-generation Schottky rectifier structure that uses a MOSFET-like barrier instead of a metal-semiconductor junction. This architecture drops forward voltage (V_F) closer to that of a Schottky diode while keeping reverse leakage far below classic Schottky levels, and it survives automotive surge and avalanche stresses better than a planar Schottky. Within the discrete-semiconductor hierarchy, the SBR sits between standard rectifiers and active OR-ing controllers, and is the preferred passive-rail rectifier in automotive ECU, ADAS, and lighting power trees. Key specifications include a 60 V repetitive peak reverse voltage (V_RRM), a 3 A average forward current (I_F(AV)), a typical V_F below 0.50 V at 3 A, and ultra-low reverse leakage measured in microamperes at the rated blocking voltage. The device is qualified to AEC-Q101, supports PPAP, and is manufactured in IATF 16949 certified facilities, with a maximum junction temperature of 175 °C and an MSL1 moisture sensitivity rating for robust PCB assembly. Architecturally, the field-plated termination extends the depletion region across the die surface, suppressing edge leakage that dominates conventional Schottky reverse current. The result is a robust 60 V rating in the SMAF (approximately 3.6 mm × 2.8 mm) package that competes with larger SMA and SMB footprints while preserving a slim profile for dense automotive PCB layouts. Typical applications include automotive load-dump-protected OR-ing between dual batteries, freewheeling diodes in 12 V/24 V motor and solenoid drivers, polarity protection in body-control modules, and high-efficiency rectification in LED headlamp boost converters. Industrial uses span 24 V bus protection, solar charge controllers, and eMobility auxiliary supplies. When designing with this part, ensure the PCB land pattern follows the SMAF (DO-221AC-like) footprint and derate I_F using the package's thermal resistance curve above 75 °C ambient. The 60 V rating gives ample margin across 12 V (load-dump up to ~35 V) and 24 V industrial bus environments, but continuous conduction at 3 A into very low V_F loads still requires copper-pour thermal management. This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical thermal/layout guidance not consolidated on the manufacturer's product brief.
SDM160S1FQ-7 - 60V 1A Schottky Rectifier SOD-123F | Diodes Inc
The Diodes Incorporated SDM160S1FQ-7 is a 60 V, 1 A surface-mount Schottky barrier rectifier in a SOD-123F package with low forward voltage drop of 530 mV at 1 A. It is qualified for general-purpose rectification, freewheeling, and reverse-polarity protection in compact portable and industrial designs. A Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction rather than a P-N junction, producing a lower forward voltage drop (typically 0.3-0.5 V versus 0.7 V for a standard silicon diode) and faster switching. Rectifiers sit in the hierarchy of discrete semiconductors, specifically the diode family, and serve the essential role of converting AC to DC or blocking reverse current in DC rails. Low-VF Schottky parts are the workhorse of modern switch-mode power supplies where every millivolt of forward drop translates directly into conduction loss and thermal rise. Key specifications of the SDM160S1FQ-7 include a 60 V maximum repetitive peak reverse voltage (VRRM), 1 A average rectified forward current (IO), 530 mV typical forward voltage at 1 A, 0.06 mA maximum reverse current at 25 C, and a fast recovery speed rated below 500 ns. The SOD-123F package provides a flat-lead, low-profile footprint with a typical thermal resistance suitable for 1 A continuous conduction on standard FR-4 copper pours. The device is lead-free, RoHS compliant, and halogen-free per the "Green" device designation. Architecturally, the SDM160S1FQ-7 uses a guard-ring die construction for transient protection and an interlocking clip design that supports high surge current capacity. These features reduce leakage under reverse bias and improve robustness during inrush events typical of hot-plug or capacitive-load circuits. The die is optimized for low conduction loss at moderate currents, making it well-suited for output rectification in low-voltage buck converters and for OR-ing redundant supplies. Typical applications include DC-DC converter output rectification, freewheeling diodes across inductive loads such as relays and solenoids, polarity-protection in USB and battery chargers, low-voltage AC adapters, and solar/photovoltaic bypass service. The combination of small package, low VF, and fast switching supports high-density PCB layouts where thermal budget is constrained. When designing with this part, ensure the copper-pad area under the SOD-123F cathode lead is sized to keep junction temperature below 125 C at the worst-case steady-state forward current. For pulsed or repetitive surge service, consult the IFSM rating in the manufacturer datasheet. Polarity is cathode-marked; reverse insertion will short the supply and immediately destroy the device. This page synthesizes distributor pricing, drop-in cross-brand equivalents, and practical design notes not found on the manufacturer datasheet cover page.
SKD82/16 - 80A 1600V Bridge Rectifier | Semikron SEMIPONT 3
The Semikron SKD82/16 is a 3-phase power bridge rectifier from the SEMIPONT 3 family, rated for 80 A DC output current at a repetitive peak reverse voltage of 1600 V. Housed in an industry-standard screw-mount chassis module, the device integrates six rectifier diodes in a three-phase bridge configuration across five heavy-duty screw terminals, making it suitable for direct PCB bus-bar or chassis wiring. The junction operating range spans -40 C to +150 C, with a non-repetitive peak forward surge current of 750 A for inrush and short-circuit events. A power bridge rectifier is a discrete-semiconductor module that converts three-phase AC input into a single-polarity DC output by steering current through six rectifier legs. In the wider taxonomy, it sits within silicon power diodes, which are categorized as discrete semiconductors and serve as foundational building blocks of industrial power electronics - feeding variable frequency drives, battery chargers, DC motor fields, and front-end rectifier stages of switch-mode power supplies. Key electrical specifications include a maximum forward voltage of approximately 1.55 V per leg at rated current, a low thermal resistance junction-to-ambient of 1.8 K/W when mounted on a 250x250x1 mm painted metal heatsheet, and an isolated metal baseplate that simplifies chassis grounding and paralleling with neighboring modules. The module accepts standard M5 power terminals and M6 mounting bolts, simplifying mechanical integration into existing SEMIPONT 3 design footprints. The SKD82/16 uses a standard six-pulse three-phase uncontrolled bridge topology, which is the most rugged and cost-effective AC-to-DC conversion method for industrial loads. Its silicon rectifier dice are pressure-contacted to the copper baseplate rather than soldered, which improves thermal cycling endurance and enables higher surge-current tolerance than equivalent PCB-mount bridge assemblies. Typical applications include AC-to-DC front-end rectifiers for variable frequency drives (VFDs), input rectifier stages for industrial switch-mode power supplies, battery-charger power stages, and DC motor field-supply rectifiers. Its 1600 V rating comfortably covers 480 V AC and 600 V AC three-phase industrial bus inputs when derated per IEC 60146. When designing with the SKD82/16, ensure adequate heatsinking: at full 80 A load with a 1.55 V drop, the module dissipates approximately 124 W of conduction loss, and at 1.8 K/W the junction will sit well above ambient without a substantial heatsink. AC-line fuses sized to I^2t of the diode, plus an RC snubber across each leg, are recommended to limit dv/dt-induced reverse-recovery stress on the bridge. This page synthesizes distributor pricing, drop-in alternatives and practical design notes for the SKD82/16 not found in the manufacturer datasheet alone, including cross-brand SEMIPONT 3 family equivalents and paralleled-module thermal guidance.
SL1200 - 12kV 40mA Fast Recovery Rectifier Diode | EDI
The Electronic Devices Inc. (EDI) SL1200 is a high-voltage, fast-recovery miniature rectifier diode rated for a peak reverse voltage (PRV) of 12,000 V and an average rectified forward current of 40 mA, with a fast recovery time of 100 ns in a small-size molded 2-pin package with minimum 1-inch leads. A high-voltage rectifier diode is a discrete semiconductor that permits current flow in one direction while blocking very large reverse voltages, converting AC to DC in the final stage of the power-conversion hierarchy (rectifier diode -> discrete semiconductor -> power conversion system). High-voltage rectifiers like the SL1200 are engineered specifically to withstand thousands of volts of reverse stress, unlike general-purpose rectifiers rated at a few hundred volts. Key features of the SL1200 include its 12 kV peak reverse voltage rating, which eliminates the need to series-stack multiple lower-voltage diodes; its 100 ns fast recovery characteristic, which reduces switching losses in high-frequency operation; avalanche characteristics that absorb transient over-voltage events without destructive failure; and low reverse leakage current, which improves efficiency and thermal stability in high-impedance circuits. Technically, the SL1200 uses a molded small-size package construction with a minimum lead length of 1 inch, which provides the creepage and clearance distance required to support its 12 kV blocking voltage in compact assemblies. The avalanche capability means the die can clamp limited reverse transient energy internally, adding robustness in flyback and multipliers where spikes are common. Typical applications include high-voltage DC power supplies, voltage multipliers (Cockcroft-Walton ladders), CRT and X-ray equipment bias supplies, electrostatic precipitators, photomultiplier tube supplies, and laser or ion-source high-tension circuits. Design consideration: because reverse leakage doubles roughly every 10 C, derate the 12 kV PRV in high-temperature environments and ensure the 1-inch minimum lead spacing is preserved on the PCB to maintain high-voltage isolation. This page synthesizes distributor availability, alternative-sourcing guidance, and practical high-voltage layout notes not found in the short manufacturer datasheet.
SR2020CT - 20A 20V Dual Schottky Rectifier | Galaxy Semiconductor
The Galaxy Semiconductor SR2020CT is a dual Schottky barrier rectifier rated for 20 A forward current per leg and 20 V reverse voltage, housed in a through-hole TO-220AB package with a metal tab for heatsink mounting. It is manufactured by multiple qualified sources including UPM, Daco Semiconductor, Semtech Electronics, and Galaxy Semi-Conductor Holdings under the same SR2020CT nomenclature and footprint. A Schottky barrier rectifier is a type of power diode that uses a metal-semiconductor junction instead of a P-N junction. Because conduction is by majority carriers, Schottky diodes exhibit a lower forward voltage drop and essentially zero reverse recovery time compared with standard silicon rectifiers, making them the preferred output rectifier stage in switching power supplies, DC-DC converters, and battery-charging circuits where efficiency at low output voltages matters most. Key features of the SR2020CT include epitaxial construction with a guard ring for transient protection, majority-carrier conduction for fast switching, and an Underwriters Laboratory flammability classification 94V-0 molded plastic package. The dual (center-tap) configuration places two diodes in one TO-220AB outline, saving board space in push-pull and forward converter secondary sides. Reverse voltage spans 20 to 60 V across the family (SR2020CT through SR2060CT) at a common 20 A forward current rating. The guard-ring terminated metal-semiconductor junction suppresses avalanche and surface leakage, allowing conservative derating in inductive-load environments. Because reverse recovery charge is negligible, switching losses at 50-100 kHz converter frequencies remain low, and thermal design is dominated by conduction loss, calculated as Vf multiplied by average load current per leg. Typical applications include low-voltage, high-frequency inverters, output rectification in switching-mode power supplies, freewheeling diodes in synchronous buck topologies, reverse-polarity protection in automotive and solar battery systems, and secondary-side rectification in adapter and charger designs. Design consideration: at 20 A the conduction loss of roughly 10 W or more requires a heatsink or generous PCB copper with thermal grease; verify the forward-voltage-versus-current curve at your actual junction temperature. This page synthesizes verified datasheet ratings, drop-in family alternatives, pinout, and practical design notes not consolidated in any single manufacturer datasheet.
SRVBS260NT3G - 60V 2A Surface Mount Schottky Rectifier | onsemi
The onsemi SRVBS260NT3G is a 2 A, 60 V surface-mount Schottky power rectifier supplied in an SMB package with a matte-tin lead finish. It is a single-diode, dual-terminal, C-bend surface-mount rectifier from onsemi's low-voltage, high-frequency Schottky barrier family, employing epitaxial construction with oxide passivation and metal overlay contact. A Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a P-N junction, producing a lower forward voltage drop (typically 0.3 V to 0.7 V versus 0.7 V to 1.0 V for silicon P-N diodes) and faster switching. This class of diode sits within the broader hierarchy of rectifier diode -> discrete semiconductor -> power component, and is a fundamental building block of any switch-mode power supply, freewheeling path, or polarity-protection circuit. Key features include a 60 V reverse test voltage (VRRM), 2 A maximum average forward rectified current, a maximum forward voltage of 0.63 V at 2 A, and an operating temperature range of -55 C to +125 C. The SMB outline is rated for a peak reflow temperature of 260 C, making the part compatible with standard JEDEC J-STD-020 reflow profiles. The device is well suited to low-voltage, high-frequency switching power supplies, freewheeling diodes, and polarity-protection diodes where its low VF and fast recovery characteristics reduce conduction and switching losses simultaneously. The epitaxial Schottky construction provides tight forward-voltage distribution and stable leakage behavior over temperature. The metal overlay contact reduces localized heating at the junction, while oxide passivation guards the junction surface against contamination and humidity-induced drift. Compared to conventional rectifier diodes, the SRVBS260NT3G offers an order-of-magnitude faster reverse recovery, which is the dominant loss mechanism in 100 kHz to 1 MHz switching converters. Designers can therefore use the part directly across synchronous-rectifier replacement gaps, across low-side freewheeling positions, and as a discrete OR-ing diode in redundant power paths. Typical applications include low-voltage DC-DC converters, freewheeling diodes across inductive loads (relays, solenoids, motors), reverse-polarity protection at the input of a battery-powered device, and OR-ing of redundant power rails in telecom and server hardware. The 60 V rating provides ample margin for 24 V industrial buses and 48 V telecom rails when used as a reverse-polarity blocker in series with the source. When designing with this device, account for the negative temperature coefficient of the forward voltage: VF decreases as junction temperature rises, which can cause thermal runaway if the part is mounted on a small land pattern without adequate copper heat-spreading. Use a minimum 50 mm^2 of copper per terminal and keep trace lengths short to minimize parasitic inductance in high-di/dt loops. This page synthesizes distributor pricing, drop-in onsemi and cross-brand alternatives, and practical thermal and PCB layout guidance not consolidated in any single manufacturer or distributor resource.
SS0530 - 30V 500mA Schottky Diode SOD-123 | Panjit
The Panjit International SS0530 is a 30V, 500mA surface-mount Schottky barrier diode supplied in the SOD-123 small-outline plastic package. It is rated for a repetitive peak reverse voltage (VRRM) of 30V, a DC forward current of 0.5A, and a peak surge forward current of 5.0A, making it a general-purpose low-voltage rectifier for polarity protection, free-wheeling, and DC-DC converter OR-ing stages. The device is supplied on tape-and-reel as the SS0530_R1_00001 ordering code. A Schottky barrier diode is a unipolar semiconductor device formed by a metal-semiconductor junction rather than the PN junction used in conventional signal diodes. This construction eliminates the minority-carrier storage charge, which gives Schottky diodes a much faster reverse-recovery time (typically sub-nanosecond) and a lower forward voltage drop (Vf) at a given current than a silicon rectifier of equivalent die size. The trade-off is a higher reverse leakage current and a lower peak reverse-voltage rating than PN-junction rectifiers - so Schottky parts are used at 5V, 12V, 24V, and 48V rails rather than the 200V+ mains range. Key features of the SS0530 include very low forward voltage drop, fast reverse recovery, a guard ring construction for transient protection, and an SOD-123 outline that is interchangeable with the industry-standard B5817W / B5819W / SK12 / SS14 footprints used by Vishay, onsemi, Diodes Inc., and others. The part is fully RoHS compliant and is built with a Pb-free matte-tin finish suitable for lead-free reflow profiles up to 260C peak. The SS0530 is positioned as a low-Vf, 0.5A Schottky diode in the SS0520-SS0540 family. The die uses a guard-ring structure to improve transient energy capability and long-term reliability under repetitive surge conditions such as those seen at the output of a switching converter or inside a USB / Bluetooth or DC motor drive rail. Typical applications include low-voltage DC-DC converters as the synchronous-rectifier or OR-ing diode, free-wheeling diode across relay coils and solenoids, reverse-polarity polarity protection on USB ports and battery packs, and signal clamping in low-frequency audio and instrumentation. Panjit recommends it for switching power supplies, mobile devices, and computer peripherals where 0.5A and 30V are within the design envelope. When designing with the SS0530, observe the maximum forward current derating above 25C (typically 2.5 mA/C for SOD-123) and ensure that the reverse voltage never exceeds 30V, including any inductive transient overshoot. A small series resistor or RC snubber is recommended across inductive loads to keep the device inside its Safe Operating Area. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single source for evaluation, sourcing, and second-source qualification of the SS0530.
SS0530T/R - 30V 500mA Schottky Diode SOD-123 | PANJIT
The PANJIT SS0530T/R is a 30 V, 500 mA surface-mount Schottky barrier diode in the SOD-123 (Plastic Package-2) outline. It is supplied on a Tape and Reel carrier (the "/R" suffix denotes the T&R packaging code) for high-volume pick-and-place assembly. According to the manufacturer datasheet, the SS0530 family is designed for surface-mount applications where low forward voltage drop, fast switching, and a PN-junction guard ring for transient and ESD protection are required. A Schottky diode is a semiconductor device formed by a metal-semiconductor junction rather than the P-N junction used in conventional rectifiers. This construction yields a lower forward voltage drop (typically 0.35 V to 0.55 V at the rated current), negligible reverse-recovery time, and faster switching speed. As a member of the discrete-semi > diodes family, the SS0530 sits at the entry level of the Schottky rectifier hierarchy (Schottky diode -> rectifier diode -> discrete semiconductor), and is widely used as a low-loss rectifier, reverse-polarity blocker, or OR-ing element in 5 V to 24 V power rails. Key features include a 30 V peak repetitive reverse voltage (VRRM), a 500 mA average rectified forward current (IF(AV)) rating, low turn-on voltage, and solderable terminals qualified to MIL-STD-202 Method 208. The molded green plastic SOD-123 package weighs approximately 0.008 g and is polarity-banded per the standard SOD-123 cathode-bar convention. The PN-junction guard ring integrated into the die improves transient and ESD robustness versus simple Schottky structures. The SS0530 uses a barrier-style Schottky die in a SOD-123 outline, allowing it to replace larger SMA-packaged parts on many PCBs while maintaining thermal performance adequate for 500 mA continuous conduction when the land pattern is sized correctly. Its fast switching makes it suitable for high-frequency DC-DC converter outputs, freewheeling roles, and signal clamping in low-voltage logic interfaces. Typical applications include low-voltage rectification in portable and battery-powered devices, freewheeling diodes across relay coils and inductors, reverse-polarity protection on USB and 5 V to 12 V rails, and DC-DC converter output rectification. The 30 V reverse rating comfortably covers 5 V, 12 V, and 24 V nominal buses. When designing with this part, ensure the PCB land pattern follows the JEDEC SOD-123 recommendation and that the cathode band orientation is observed. Avoid exceeding 500 mA continuous forward current, and derate appropriately if the ambient temperature exceeds 25 C. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
SS0530_R1_00001 - 30V 500mA Schottky Diode | Panjit | SOD-123
The Panjit SS0530_R1_00001 is a 30 V, 500 mA surface-mount Schottky barrier diode (SBD) housed in a SOD-123 package, supplied on tape and reel for high-volume SMT assembly. It is a single-phase, single-element rectifier diode in the Schottky family, specified with a 30 V repetitive peak reverse voltage (VRRM), 500 mA average rectified forward current, and a typical forward voltage drop of 430 mV at 500 mA. A Schottky barrier diode is a semiconductor rectifier that uses a metal-semiconductor junction instead of a PN junction, eliminating the minority-carrier charge-storage delay. This places Schottky diodes in the broader hierarchy: diode -> rectifier -> discrete semiconductor -> power component. The Schottky construction yields a lower forward voltage drop and faster switching than standard silicon rectifiers, making SS0530_R1_00001 ideal for low-voltage, high-efficiency power conversion where conduction loss matters more than blocking voltage. Key features include 30 V reverse voltage rating, 500 mA continuous forward current, low VF of 430 mV at 500 mA to minimize conduction loss, fast switching for high-frequency rectification, a small SOD-123 surface-mount footprint, and tape-and-reel packaging for automated pick-and-place assembly. The device is RoHS compliant per distributor listings. These characteristics make the part a cost-effective choice for low-power DC-DC converters, freewheeling diodes, and reverse-polarity protection circuits. The Schottky barrier construction inherently limits leakage current and reverse recovery time, so the SS0530_R1_00001 can be used in switching regulators up to several hundred kHz without the switching losses associated with PN-junction rectifiers. Its thermal performance is dominated by the small SOD-123 die, which is suitable for moderate continuous current but requires attention to PCB copper area at full 500 mA load. Typical applications include low-voltage buck/boost converter freewheeling, DC polarity protection in USB chargers and adapters, signal clamping and OR-ing in low-voltage distribution rails, and small-signal RF detector circuits. The 30 V VRRM also provides ample headroom for 12 V automotive and 24 V industrial rail protection. When designing with this part, ensure the PCB land pattern follows the SOD-123 standard and provide adequate copper area on both anode and cathode pads for thermal dissipation. At 500 mA continuous forward current, a minimum of 25 mm² of copper per pad is recommended to keep the junction temperature within safe limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a single reference for engineers evaluating the SS0530_R1_00001.
SS24T3G - 40V 2A SMB Schottky Rectifier | onsemi
The onsemi SS24T3G is a 40 V, 2 A surface-mount Schottky barrier power rectifier in the SMB power surface-mount package, featuring epitaxial construction with oxide passivation and a metal-overlay contact for low forward voltage drop and fast switching. The device is rated for a repetitive peak reverse voltage (VRRM) of 40 V and an average rectified forward current of 2 A, with a low forward voltage drop characteristic of the Schottky barrier principle that minimizes conduction losses in low-voltage, high-frequency rectification. It is supplied in tape-and-reel packaging (suffix T3) on a 2,500-piece reel. A Schottky diode is a unipolar semiconductor rectifier formed by a metal-semiconductor junction rather than a PN junction, which eliminates minority-carrier charge storage and enables switching speeds orders of magnitude faster than conventional silicon rectifiers. Within the broader taxonomy, the SS24T3G sits under: Schottky diode -> rectifier diode -> discrete semiconductor -> electronic component. Compared to standard recovery rectifiers (1N400x series) and ultrafast recovery diodes, Schottky rectifiers trade higher reverse leakage for lower forward voltage and negligible reverse-recovery time, making them the preferred choice for low-voltage, high-frequency power conversion. Key features include a guard ring for transient protection, a low-profile SMB package suitable for automated assembly, and a moisture sensitivity level of MSL 1 (unlimited floor life per JEDEC J-STD-020). The oxide-passivated epitaxial construction provides long-term stability of forward voltage drop and reverse leakage. The metal-overlay contact geometry yields a robust die-to-package interconnect that survives thermal cycling typical of SMPS environments. Architecturally, the SS24T3G uses a single Schottky barrier die encapsulated in a moulded epoxy SMB body with a copper-lead frame and a matte-tin plated finish for lead-free reflow compatibility. The asymmetric minority-carrier-free conduction mechanism means switching loss is dominated by capacitive charge (Qc) rather than reverse recovery, enabling efficient operation at switching frequencies from tens to hundreds of kHz. Typical applications include low-voltage, high-frequency switching power supplies as free-wheeling diodes, polarity-protection diodes in DC distribution rails, and OR-ing diodes in redundant power architectures. It is well-suited as the output rectifier on a 12 V or 24 V buck-derived rail. When designing with this part, observe the SMB power-package land-pattern recommendation and respect the derating curve above 25 C ambient. For high-frequency operation, the capacitive charge Qc dominates switching loss and should be accounted for in efficiency analysis. This page synthesizes distributor pricing, drop-in alternatives in the same SMB footprint, and practical thermal and layout design notes not found in the manufacturer datasheet alone.
SS310L - 3A 100V Schottky Barrier Rectifier | Taiwan Semiconductor
The Taiwan Semiconductor SS310L is a 3 A, 100 V surface-mount Schottky barrier rectifier in a Sub-SMA (DO-214AC compatible, low-profile) package, rated for an operating junction temperature range of -55C to +125C. A Schottky barrier rectifier is a type of power diode that uses a metal-semiconductor junction instead of a P-N junction, producing a significantly lower forward voltage drop (typically around 0.5 V to 0.7 V at rated current for a 100 V class device) and near-zero reverse recovery charge. Within the power-management hierarchy, it belongs to the rectifier diode family, itself a subset of discrete power semiconductors used for AC-to-DC conversion and reverse-polarity protection. Key differentiating characteristics of the SS310L include its 3 A average forward rectified current rating, its 100 V repetitive peak reverse voltage (VRRM) - the top of the SS3xL series voltage range that spans 40 V to 100 V per the manufacturer datasheet - and its compact Sub-SMA footprint suited to space-constrained boards. The 'L' suffix designates the low-profile, lead-free package variant. Technically, the majority-carrier Schottky structure delivers fast switching with essentially no reverse recovery, reducing switching losses in high-frequency converters. Thermal performance depends on PCB copper area because the SMA-style package dissipates power primarily through its solderable terminations; derating above ambient temperature follows the manufacturer's power-versus-temperature curve. Typical applications include low-voltage DC-DC converter output rectification and freewheeling, reverse-polarity and ORing protection in battery-powered equipment, and polarity protection on power adapters and charging ports. Its low forward drop directly reduces conduction loss and heat in these roles. Design consideration: at a 3 A load with an estimated 0.6 V forward drop, conduction dissipation is roughly 1.8 W, so generous copper pour on both terminations is recommended to keep junction temperature within the +125C maximum. Never substitute a lower-voltage (e.g., 40 V SS34L) part where transients can exceed 100 V. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SS310L-R2 - 3A 100V Schottky Rectifier SMA | Taiwan Semiconductor
The Taiwan Semiconductor SS310L-R2 is a 3 A surface-mount Schottky barrier rectifier with a 100 V repetitive peak reverse voltage (VRRM) and a low forward voltage drop of approximately 700 mV, housed in the molded-plastic SMA (DO-214AC) package with built-in strain relief for pick-and-place assembly. A Schottky barrier rectifier is a type of power diode that uses a metal-semiconductor junction instead of a P-N junction, which produces a characteristically low forward voltage drop and near-zero reverse recovery time. Within the power electronics hierarchy, it belongs to the discrete semiconductor family: diode -> rectifier diode -> Schottky barrier rectifier. These devices are the workhorse rectification elements in switching power supplies, where they convert pulsating current into DC and dissipate minimal conduction loss. Key features of the SS310L include the 3 A average forward rectified current rating, the 100 V reverse voltage class, low forward voltage for reduced heat generation, and a metallurgically bonded construction for reliable mechanical and thermal performance. The epoxy body is UL 94 V-0 flame-retardant rated, and polarity is marked by a color band on the cathode end for easy pick-and-place orientation. Technically, the Schottky barrier structure eliminates reverse recovery charge, so switching losses at typical SMPS frequencies of 50 kHz to several hundred kHz are negligible compared with ultrafast P-N junction diodes. The trade-off is higher reverse leakage current, which increases with temperature - designers must account for thermal runaway margins in hot environments and derate current above the specified case or lead temperature. Typical applications include free-wheeling diodes in buck converters and relay drivers, output rectification in low-voltage switching power supplies, reverse-polarity protection in automotive and industrial inputs, and battery charging circuits where low conduction loss directly improves efficiency. A key design consideration is thermal management: at 3 A with roughly 0.7 V forward drop, conduction loss is about 2.1 W, so adequate PCB copper area on the SMA pads is essential to keep junction temperature within rating. Estimated figures based on the 700 mV typical VF; always verify against the specific test conditions in the manufacturer datasheet. This page synthesizes distributor pricing context, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SS310L-RUG - 3A 100V Schottky Rectifier Sub SMA | Taiwan Semiconductor
The Taiwan Semiconductor SS310L-RUG is a 3 A, 100 V surface mount Schottky barrier rectifier housed in a compact Sub SMA (DO-214AC style) package, designed for efficient power rectification in space-constrained electronics. The suffix RUG identifies the RoHS-compliant, lead-free plating and reel packaging option. A Schottky barrier rectifier is a type of power diode that uses a metal-semiconductor junction instead of a conventional P-N junction. This construction yields a lower forward voltage drop and dramatically reduced reverse-recovery charge, making Schottky rectifiers the preferred choice for switching power supplies, DC-DC converters, and reverse-polarity protection where conduction losses and switching losses both matter. Rectifiers form the discrete-semiconductor layer of the broader power management hierarchy, sitting alongside MOSFETs and controller ICs. Key features include a 100 V reverse voltage rating suitable for 12 V, 24 V, and 48 V rail systems, a 3 A average forward current capability, and low reverse leakage typical of the SS310L series. The surface mount Sub SMA package saves board area versus SMA and SMB alternatives while maintaining solderability through reflow profiles. Technically, the metal-semiconductor junction of the SS310L switches from forward to reverse conduction with essentially no reverse recovery, which is why it excels in freewheeling, output rectification, and ORing applications at switching frequencies common in modern converters. The operating junction range of -55C to +150C supports industrial and automotive-adjacent environments. Typical applications include secondary-side rectification in flyback and buck converters, reverse battery and reverse polarity protection, freewheeling diodes for inductive loads, and DC-DC converter output stages in consumer, industrial, and networking equipment. In design, size the copper pad area for the package thermal resistance and derate forward current at elevated ambient temperature; verify reverse leakage at maximum junction temperature, since Schottky leakage rises exponentially. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SS310L-RVG - 3A 100V Schottky Rectifier | Taiwan Semiconductor
The Taiwan Semiconductor SS310L-RVG is a 3 A, 100 V surface-mount Schottky barrier rectifier in a sub-SMA (DO-214AC-compatible) package, designed for low power loss and high-frequency rectification in compact power supplies. A Schottky barrier rectifier is a type of power diode that replaces the conventional P-N junction with a metal-semiconductor junction, producing a lower forward voltage drop and near-zero reverse recovery charge. Within the power management hierarchy, it sits alongside rectifier diodes as a discrete semiconductor used to convert and steer current in switched-mode power supplies, and its surface-mount sub-SMA outline belongs to the broader SMA/DO-214AC surface-mount diode family. Key features of the SS310L include a 100 V reverse voltage rating, a 3 A average forward current capability, low power loss for improved efficiency, and high surge current capability for inrush-prone circuits. The 'L' suffix denotes a low-reverse-leakage version of the widely used SS310 series, an important advantage in battery-powered and high-temperature designs where leakage-induced standby drain and thermal runaway risk must be minimized. Technically, the metal-semiconductor junction of a Schottky rectifier conducts with a forward voltage well below that of an ultrafast silicon P-N diode at equivalent current, reducing conduction loss in the 3 A path. Because recovery charge is negligible, switching loss stays low at high frequency, making the device well suited as an output or freewheeling rectifier in converters operating at tens to hundreds of kilohertz. Surge current capability absorbs the repetitive peak currents found in flyback and buck secondary sides. Typical applications include secondary-side output rectification in AC-DC adapters and chargers, freewheeling and catch diodes in buck and boost converters, reverse-polarity and reverse-battery protection, and DC-DC modules in consumer, industrial, and networking equipment. When designing with the SS310L-RVG, verify junction temperature against the worst-case combination of average current, forward voltage, and ambient temperature, and provide adequate PCB copper on both terminals for heat dissipation. Always confirm the exact current and leakage specifications in the manufacturer datasheet before finalizing derating margins. This page synthesizes distributor inventory data, drop-in alternative cross-references, and practical design guidance not found in the manufacturer datasheet, helping engineers select and buy the right 3 A 100 V Schottky rectifier quickly.
STPS20120CR - 120V 2x10A Schottky Rectifier | STMicroelectronics
The STMicroelectronics STPS20120CR is a dual (1 pair) common-cathode power Schottky rectifier rated 120 V repetitive reverse voltage (VRRM) and 2 x 10 A average forward current, housed in a through-hole TO-262-3 long-leads (I2PAK, TO-262AA) package. According to the STMicroelectronics datasheet, it is avalanche-rated and supports a high maximum junction temperature with low leakage current. A power Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a P-N junction, giving a lower forward voltage drop and essentially zero reverse-recovery charge. Within the power-conversion hierarchy it belongs to the rectifier diode family, a subset of discrete power semiconductors used in power management stages to convert AC to DC or to steer current in switching converters. Key features of the STPS20120CR include the 120 V blocking rating, which covers off-line and 48 V-class power buses; the dual common-cathode configuration, which allows two anodes to share one cathode tab for full-wave or ORing topologies; avalanche energy capability for robustness against leakage-inductance spikes; and a good trade-off between leakage current and forward voltage drop as stated in the ST datasheet. Technically, the two Schottky dies are mounted on the tab which forms the common cathode, giving excellent thermal coupling to the heatsink through the TO-262/TO-262AA flange. The absence of reverse recovery makes switching losses negligible at frequencies typical of SMPS secondary rectification, while conduction loss is set by the typical forward voltage of the Schottky barrier. Typical applications include secondary-side rectification in switch-mode power supplies, DC-DC converter output stages, reverse-polarity and ORing protection, and freewheeling or clamping functions in motor-drive and inverter circuits. A key design consideration is thermal management: at 10 A per leg the dissipation equals VF x IF(AV), so a properly sized heatsink and thermal interface are required to keep the junction within its rated maximum temperature. This page adds value beyond the manufacturer datasheet by synthesizing distributor availability, drop-in alternative analysis, comparison tables, and practical design notes in one place.
STPSC10H065DLF - 650V 10A SiC Schottky Diode | STMicroelectronics
The STMicroelectronics STPSC10H065DLF is a 650 V, 10 A power Schottky silicon carbide (SiC) diode housed in a low-profile PowerFLAT 8x8 HV surface-mount package. Manufactured on a silicon carbide substrate, this wide-bandgap rectifier delivers essentially zero reverse recovery at turn-off, with negligible ringing and a minimal capacitive turn-off behavior that is independent of temperature. A Schottky diode is a metal-semiconductor junction rectifier that conducts using majority carriers rather than minority-carrier diffusion, which eliminates the reverse recovery charge stored in a conventional P-N diode. In the power-semiconductor hierarchy, this SiC Schottky rectifier sits within the rectifier diode family of discrete power devices, serving as the freewheeling or output rectification element in power conversion stages. Silicon carbide's roughly 3x wider bandgap versus silicon permits thin blocking layers rated at 650 V while retaining Schottky-like switching behavior. Key differentiating features include the 650 V repetitive reverse voltage class, a 10 A continuous forward current rating suited to several-hundred-watt converters, and high surge current capability paired with a low forward voltage drop in a compact 8x8 mm footprint. Because turn-off loss is purely capacitive and temperature-independent, switching losses remain flat across the full operating temperature range, simplifying thermal design and enabling higher switching frequencies than silicon fast-recovery diodes. Technically, the absence of reverse recovery (trr) removes the dominant turn-on loss mechanism of the accompanying MOSFET or IGBT in hard-switched topologies. Negligible ringing reduces EMI filter burden, and the low-profile PowerFLAT 8x8 HV package minimizes parasitic inductance for fast-switching loops while mounting flush on the PCB for thermal dissipation through the exposed pad. Typical applications span telecom and network rectifier front ends, industrial power supplies such as server and welding power stages, and renewable energy converters including solar micro-inverters and boost stages of photovoltaic systems, where 400 V-class DC buses demand a 650 V rectifier. Design consideration: the capacitive charge stored at turn-off is discharged into the switching device, so verify total switching loss at the intended frequency; also follow the datasheet layout guidance for exposed-pad copper area to keep junction temperature within rating. This page synthesizes distributor pricing, verified datasheet highlights, application guidance, and design notes not consolidated in the manufacturer datasheet alone.
STTH102AY - 1A 200V Ultrafast Rectifier | STMicroelectronics | SMA
The STTH102AY is an ultrafast high-voltage rectifier diode from STMicroelectronics, designed for high-frequency power conversion applications. It delivers a forward current of 1A with a repetitive peak reverse voltage of 200V, housed in a compact SMA (DO-214AC) surface-mount package. The device features an ultrafast reverse recovery time of 25 ns, making it ideal for switching power supplies, freewheeling diodes, and snubber circuits. A rectifier diode is a semiconductor device that allows current to flow in only one direction, converting alternating current (AC) to direct current (DC). Ultrafast rectifiers are a subclass of power diodes optimized for high-speed switching, with reverse recovery times typically below 50 ns. They are essential in switch-mode power supplies (SMPS) and DC-DC converters where efficiency and reduced switching losses are critical. The STTH102AY belongs to the STTH family of ultrafast diodes, which are known for their low forward voltage drop and fast recovery characteristics. Key features of the STTH102AY include a low forward voltage drop of 0.85V at 1A, a maximum junction temperature of 175°C, and a repetitive peak reverse voltage of 200V. The device also offers a non-repetitive peak forward surge current of 30A, ensuring robustness during transient conditions. Its SMA package provides excellent thermal performance with a thermal resistance of 15°C/W, enabling efficient heat dissipation in compact designs. The STTH102AY utilizes planar technology, which ensures stable and reliable performance across its operating range. The ultrafast recovery time minimizes reverse recovery losses, improving overall system efficiency in high-frequency circuits. The device is AEC-Q101 qualified, making it suitable for automotive applications where reliability under harsh conditions is paramount. Typical applications include switch-mode power supplies, freewheeling diodes in inductive loads, snubber circuits, and output rectification in DC-DC converters. Its fast recovery and low forward voltage make it particularly effective in power factor correction (PFC) circuits and LED lighting drivers. When designing with the STTH102AY, ensure adequate PCB copper area for thermal management, especially at high forward currents. The device's fast recovery characteristics require careful layout to minimize parasitic inductance, which can cause voltage spikes during switching transitions.
STTH8L06G-TR - 600V 8A Turbo 2 Ultrafast Rectifier | STMicroelectronics
The STMicroelectronics STTH8L06G-TR is a Turbo 2 ultrafast high-voltage rectifier rated at 600 V repetitive peak reverse voltage (VRRM) and 8 A average forward current (IF(AV)), housed in a surface-mount D2PAK (TO-263) package with tape-and-reel packaging (TR suffix). The device is built on ST's proprietary Turbo 2 600 V planar technology and is specifically optimized for use as a boost diode in discontinuous-mode or critical-mode power factor correction (PFC) stages. A rectifier diode is a two-terminal semiconductor device that allows current to flow in only one direction, converting alternating current (AC) to direct current (DC). Ultrafast rectifiers, like the STTH8L06, feature very short reverse recovery times (trr) that minimize switching losses in high-frequency power conversion. The Turbo 2 family represents ST's second-generation ultrafast rectifier platform, positioned within the broader discrete-semiconductor taxonomy as: ultrafast rectifier -> rectifier diode -> power diode -> discrete semiconductor. The D2PAK package inherits from the TO-220 through-hole family, offering equivalent thermal performance in a surface-mount format that enables automated PCB assembly. Key specifications include a maximum reverse recovery time of 105 ns (per DigChip datasheet excerpt), low reverse recovery current, and low thermal resistance for reduced switching and conduction losses. The device offers high insulation voltage rating and is qualified to industrial and consumer-grade reliability standards. With a peak forward surge current capability and operating junction temperature up to 175 °C, the STTH8L06G-TR delivers robust performance in demanding switching power supply environments. Architecturally, the Turbo 2 process uses a platinum-doped lifetime control that achieves the ultrafast trr without the excessive forward voltage penalty seen in older ultrafast rectifiers. This trade-off between VF and trr is critical: lower trr means less switching loss in hard-switched PFC stages, while reasonable VF keeps conduction loss manageable. The combination makes the part particularly attractive in 100W to 1kW PFC stages where hard switching dominates the loss budget. Typical applications include boost diode in CCM and critical-mode PFC front ends for switch-mode power supplies, freewheeling diode in DC-DC converters, output rectification in high-frequency SMPS, and snubber/commutation applications in motor drives. The D2PAK package suits both hand-soldered prototyping and high-volume surface-mount manufacturing. The STTH8L06 family also includes TO-220AC and TO-220FPAC variants (insulation voltage 2000 VDC) for through-hole designs requiring higher isolation. When designing with this part, ensure the junction temperature stays within SOA limits by calculating power dissipation (P = VF × IF(AV) + switching losses). Provide adequate copper area on the D2PAK PCB pad — typically 1 square inch or more — to act as the heatsink. Pay attention to the snappiness factor (S = trr/tb) to evaluate EMI behavior in PFC circuits.
UF3007 - 3A 800V Ultra-Fast Rectifier Diode | Diodes Inc
The Diodes Incorporated UF3007 is a 3.0 A ultra-fast rectifier diode with an 800 V repetitive peak reverse voltage, a 1.7 V maximum forward voltage drop, and a 75 ns reverse recovery time, housed in a DO-201AD (DO-27 style) axial-lead through-hole package. An ultra-fast rectifier is a power semiconductor diode engineered for very short reverse recovery time (trr), which is the interval during which the diode continues to conduct after the applied voltage reverses. Within the power-conversion component hierarchy, the ultra-fast rectifier is a member of the rectifier diode family, which in turn belongs to discrete semiconductors and power management building blocks. Fast recovery matters because slow diodes dissipate significant switching losses in high-frequency converters. Key features of the UF3007 include a diffused-junction construction optimized for high switching efficiency, a surge overload rating of up to 150 A peak (non-repetitive), low reverse leakage current, and a plastic body carrying a UL flammability classification of 94V-0. High current capability combined with low forward voltage drop reduces conduction losses in the output stage. Technical analysis: the 75 ns trr class places the UF3007 well below standard-recovery diodes (microseconds) and suits switching frequencies commonly found in flyback and forward converters. According to the manufacturer datasheet, for capacitive loads the output current should be derated by 20% relative to the resistive-load rating. Storage temperature spans -65C to +175C per typical DO-201AD ratings, enabling rugged industrial designs. Typical applications include secondary-side output rectification in AC-DC switch-mode power supplies, free-wheeling and snubber circuits in motor drives, DC-DC converter output stages, and reverse-polarity protection in industrial equipment. Design consideration: keep lead length short and verify average forward current derating at elevated ambient temperatures, since DO-201AD axial packages rely on lead conduction for heat extraction. This page synthesizes distributor cross-reference data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
UM4306B - Si PPIN Hermetic Glass Axial RF Diode | Microchip
The Microchip UM4306B is a silicon PIN diode in a hermetic glass axial package, engineered for high-frequency switching and attenuator applications up to the UHF band. The device combines an intrinsic-region (I-region) silicon die with low thermal resistance construction, yielding low-distortion performance suitable for very low distortion linear attenuators, RF switches, and specialized functions. A PIN diode is a specialized diode structure in which a high-resistivity intrinsic semiconductor region (the "I-layer") is sandwiched between the P and N regions. Under forward bias, charge carriers flood the I-layer, lowering its RF resistance; under reverse or zero bias, the diode presents a near-open circuit. This behavior makes PIN diodes ideal for controlling RF signals in switch, attenuator, limiter, and phase-shifter circuits across a wide frequency range, behaving as a current-controlled variable resistor at RF. Key features of the UM4306B include very low intermodulation distortion, a thick intrinsic region for high RF voltage handling, hermetic glass axial packaging for environmental robustness, and a low thermal resistance construction that supports high average power dissipation. These attributes allow the UM4306B to be deployed where harmonic and intermodulation performance are critical, particularly in multi-carrier or broadband RF signal chains. Technically, the part belongs to the UM4300/UM7300 PIN diode family. The thick I-layer gives the diode a high breakdown voltage and high carrier lifetime, enabling it to handle significant RF power while maintaining a low distortion floor. The hermetic glass axial (axial-lead) package protects the silicon die from moisture and contamination, supporting long-term reliability in outdoor, military, and aerospace-grade RF front ends. Typical applications include RF switching matrices, PIN diode attenuators, AGC loops, TR switches in radar and radio transceivers, RF test equipment, and broadband signal-routing networks. Designers favor the UM4306B in designs that demand both low distortion and high reliability. When designing with this device, observe the recommended bias currents from the manufacturer datasheet and verify that the package's thermal path (lead soldering) can dissipate the intended RF power. Designers should match the bias network to the carrier-frequency band of operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an information gain over distributor-only listings for engineers evaluating the UM4306B.
UM7006B - 600V 5.5W RF PIN Diode | Microchip Technology
The Microchip UM7006B is a single-junction RF PIN diode rated for 600 V reverse voltage and 5.5 W continuous power dissipation, packaged in an axial-lead hermetic body. It is part of the UM7000 series of high-power PIN diodes originally developed by Microsemi and now carried by Microchip Technology after the 2018 Microsemi acquisition. The diode targets RF switching, attenuation, and limiter applications where moderately high power handling must coexist with low series resistance and low capacitance. A PIN diode is a semiconductor device with an intrinsic (undoped) semiconductor region sandwiched between p-type and n-type regions. Under forward bias, carriers flood the intrinsic region, lowering its resistance to enable RF signal conduction. Under zero or reverse bias, the intrinsic region is depleted, producing a high-impedance state that blocks RF signals. This variable-impedance behavior makes PIN diodes the workhorse of RF and microwave switching, attenuation, and limiter circuits from HF through millimeter-wave bands. Key features of the UM7006B include a maximum reverse working voltage of 600 V, continuous power dissipation of 5.5 W (derated above 25 C), a low series resistance in forward conduction, and a low junction capacitance that preserves insertion loss at high frequencies. The axial through-hole package provides robust mechanical strength suitable for military, aerospace, and industrial RF subsystems, and the hermetic body supports operation across the standard -55 C to +150 C military temperature range. The relatively low capacitance also enables use in fast-switching modulator and AGC loops. Architecturally, the UM7006B uses a single PIN junction optimized for high-voltage standoff and continuous-wave power handling rather than ultra-fast switching speed. Compared with smaller signal-level PIN diodes such as the 1N4007-rectifier-style parts or the lower-voltage SMP1302 series, the UM7006B trades raw switching speed for higher breakdown voltage and dissipation, making it well suited to transmit-receive (T/R) switching in HF/VHF/UHF radios, broadband RF limiters, and antenna tuning networks where the diode sees sustained RF current. Typical applications include T/R switches in HF/VHF/UHF transceivers, broadband RF limiter front ends for receiver protection, electronically tuned antenna matching networks, AGC attenuators in wideband receivers, and RF power monitoring probes. In each case the diode is biased through a resistor or choke and switched by toggling its DC bias between forward-conduction and reverse-bias states. When designing with the UM7006B, account for the 5.5 W power derating curve and provide adequate lead-bend strain relief so that thermal stress does not crack the glass-to-metal hermetic seal. A small heatsink clip or ground-plane thermal land on the PCB can substantially improve long-term reliability in continuous-duty RF applications. This page synthesizes distributor availability, drop-in alternative listings, and practical design notes that go beyond the manufacturer datasheet summary, helping engineers select the UM7006B with confidence.
UM9301 - 75V PIN Attenuator/Switch Diode | Microchip Technology
The Microchip Technology UM9301 is a silicon PIN diode housed in an axial glass-leaded (DO-35-like) hermetic package. It is rated for 75 V maximum reverse voltage, 1 W power dissipation, and is designed for both RF switch and attenuator applications in HF through microwave frequencies. A PIN diode is a semiconductor device with an intrinsic (undoped) high-resistivity "I" region sandwiched between P-type and N-type regions. Under forward bias, charge carriers flood the I region, lowering its RF resistance and allowing the diode to conduct RF energy. Under zero or reverse bias, the I region is depleted and the diode presents a high impedance. This variable-resistance behavior makes PIN diodes the workhorse component for RF switching, attenuation, AGC loops, and transmit/receive (T/R) switching in radar and communications systems. The UM9301 uses special chip geometry with an extremely thick intrinsic I region. The thick I region delivers lower distortion at high RF power levels and lower series resistance per unit capacitance, supporting attenuator use. Key features include 75 V minimum reverse breakdown voltage, 1 W power dissipation at 25 C, low diode capacitance, and fast switching speed. The thick I region geometry optimizes the part for switch applications where little or no bias voltage is applied, while also providing low distortion in attenuator mode. Typical applications include broadband RF switches, PIN-diode AGC attenuators, T/R switches in radar transceivers, antenna switching matrices, and RF power monitoring. The UM9301 is qualified for commercial and industrial environments and is RoHS-compliant. When designing with the UM9301, observe maximum reverse voltage (75 V) and power dissipation (1 W) limits. For attenuator designs, bias the diode in the linear resistance region (typically 1-10 mA forward current) to avoid distortion; for switch designs, drive the diode hard on/off (10-50 mA forward, 0 V reverse). Use proper RF PCB layout techniques: short lead lengths, controlled-impedance traces, and via-fenced ground returns to preserve the part's high-frequency performance. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical RF design notes not found in the manufacturer datasheet.
UM9369 - Semiconductor Device, NSN 5961-01-697-9746 | Microchip (Microsemi)
The Microsemi (a Microchip Technology company) UM9369 is a semiconductor device registered under US National Stock Number 5961-01-697-9746 (FSC 5961, Semiconductor Devices and Associated Hardware), supplied by the Microsemi Frequency and Time product group under part category 1B0C5. According to the NSN records retrieved from distributor and NSN lookup databases, this FSC class describes a two-electrode semiconductor device with an asymmetrical voltage-current characteristic - the defining property of a diode-class component. A diode is the most fundamental semiconductor device: it permits current flow primarily in one direction, from anode to cathode, and blocks reverse current up to a rated reverse voltage. Diodes form the base of the semiconductor taxonomy (diode -> discrete semiconductor -> semiconductor device) and serve as building blocks for rectification, freewheeling, clamping, and protection circuits in virtually every electronic system. Devices procured under NSN 5961 part numbers are typically qualified for defense, aerospace, and high-reliability industrial supply chains, where traceability and government source control (FSC 5961 classification) matter as much as raw electrical parameters. Key engineering data for the UM9369 - such as forward current rating, reverse voltage, recovery time, and package type - is not published in the distributor search data retrieved for this page, and is therefore marked with DATA_NEEDED markers in the specification table rather than estimated. Buyers should request the datasheet and certificate of conformance directly from the supplier when requesting a quote. The UM9369 is suited to defense and aerospace procurement programs that specify parts by NSN rather than commercial MPN, and to legacy system sustainment where the original Microsemi Frequency and Time source part must be maintained. When designing in any diode-class replacement, verify reverse voltage margin (typically 20% headroom above worst-case transients), forward current derating at maximum ambient temperature, and package thermal resistance before substitution. This page consolidates NSN registry data, distributor availability links, and procurement guidance; specification values are honestly marked as unavailable rather than fabricated, giving procurement teams a truthful basis for RFQ decisions.