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IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC100N04S6N022ATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 6 process technology, rated for 100 A continuous drain current (Tc) and 75 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8 (5x6 mm) leadless package. It is part of Infineon's automotive-grade IAUC family targeting highest quality and robustness levels for automotive powertrain and chassis applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to efficiently route or switch high currents at high speeds. MOSFETs sit within the broader transistor hierarchy (MOSFET -> transistor -> discrete semiconductor) and within Infineon's portfolio they belong to the OptiMOS 6 product line, which optimizes the figure-of-merit R_DS(on) x Q_g to deliver lower conduction and switching losses than prior generations. The PG-TDSON-8 package provides a low-inductance leadless footprint suitable for high-frequency switching converters and motor drives. Key specifications of the IAUC100N04S6N022 include a maximum drain-source voltage V_DSS of 40 V, a typical on-state resistance R_DS(on) of 2.2 mOhm at V_GS = 10 V, and 100 A continuous drain current at case temperature. The S6 die variant indicates Infineon's latest silicon revision, delivering improved switching performance and lower gate charge compared to legacy S5 parts. Its AEC-Q100 automotive qualification makes it directly suited to 12 V and 24 V automotive subsystems where reliability and ruggedness are mandatory. Typical applications include 12 V automotive brushed and brushless DC motor drives, electronic power steering (EPS), electric water/oil pumps, transmission control units (TCU), body electronics modules, and DC-DC converter high-side/low-side switches. The 2.2 mOhm R_DS(on) minimizes conduction loss in high-current paths, while the low Q_g reduces driver losses. When designing with this MOSFET, ensure the gate driver supplies at least 10 V V_GS for full enhancement and that PCB copper area is sized to keep the junction temperature within the -55C to +175C operating range under worst-case load. The drain tab is electrically connected to the drain terminal and must be soldered to a sufficiently large copper pour for thermal dissipation. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes drawn from the Infineon OptiMOS 6 datasheet and AEC-Q100 automotive design references, providing information not consolidated on any single distributor page.
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC100N04S6N028ATMA1 is a 40 V N-channel automotive MOSFET in the OptiMOS 6 40 V family, delivering 100 A continuous drain current and an ultra-low typical on-resistance of 2.8 mΩ in a surface-mount PG-TDSON-8 package. It is qualified for automotive use, targets high-current synchronous rectification and battery-protection switching, and dissipates up to 62 W at 25 °C case temperature. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. Within the discrete-semiconductor hierarchy, the MOSFET sits above the transistor and below the integrated circuit; N-channel enhancement-mode MOSFETs such as this part are the workhorses of low-voltage power conversion because their low R<sub>DS(on)</sub> minimizes conduction loss. The OptiMOS 6 platform extends this trend with a 40 V cell pitch engineered for synchronous buck converters, OR-ing switches, and hot-swap controllers in 12 V automotive systems. Key specifications include a maximum drain-source voltage V<sub>DS</sub> of 40 V, continuous drain current I<sub>D</sub> of 100 A at T<sub>C</sub> = 25 °C, pulsed drain current I<sub>DM</sub> of 400 A, gate threshold V<sub>GS(th)</sub> in the 1.5 V to 2.5 V range, and total gate charge Q<sub>g</sub> tuned for fast switching at hundreds of kHz. The PG-TDSON-8 (TDSON-8) package exposes a metal-drain thermal pad that keeps junction-to-case thermal resistance R<sub>thJC</sub> below 2 C/W, enabling 62 W continuous dissipation on a properly cooled PCB. Typical applications are 12 V automotive ECU power rails, battery management system (BMS) protection FETs, electric power steering (EPS) motor inverters, and high-current DC-DC converters. The combination of automotive-grade qualification and PG-TDSON-8 footprint also makes it attractive as a drop-in successor to legacy 40 V DPAK/TO-252 MOSFETs in industrial DC-DC bricks where PCB rework is impractical. When designing with this part, prioritize low-inductance Kelvin-source sensing where the package allows it, keep the gate-drive loop area below 1 cm², and verify SOA against your worst-case avalanche energy. Use an automotive-grade gate driver rated for V<sub>GS</sub> of ±20 V and add a 10 kΩ gate-source resistor for Miller-current damping. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, plus a comparison against same-family Infineon parts and cross-brand equivalents to support sourcing and second-source decisions.
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
The Infineon IAUC100N08S5N043ATMA1 is an 80 V N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS 5 process technology, housed in a surface-mount PG-TDSON-8-34 (SuperSO8) package. It is rated for 100 A continuous drain current at Tc and 4.3 mΩ maximum R<sub>DS(on)</sub>, with a 125 W power dissipation rating, making it suitable for high-current switching in automotive and industrial power systems. Key features include AEC-Q101 automotive qualification, 100% avalanche-tested silicon, MSL1 moisture sensitivity rating up to 260°C peak reflow, 175°C maximum operating junction temperature, and RoHS-compliant (Green Product) lead-free construction. The OptiMOS 5 platform delivers industry-leading figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>), minimizing both conduction and switching losses in high-frequency applications. The IAUC100N08S5N043ATMA1 utilizes Infineon's latest-generation OptiMOS 5 trench MOSFET technology, which significantly reduces gate charge (Q<sub>g</sub>) and output capacitance (C<sub>oss</sub>) compared to previous generations. This translates into lower switching losses in PWM applications such as motor drives, DC-DC converters, and synchronous rectification stages. The 4.3 mΩ on-resistance minimizes conduction losses at high currents, while the low thermal resistance of the SuperSO8 package enables efficient heat removal to the PCB copper. Typical applications include automotive 48V mild-hybrid systems, electric power steering (EPS), brushless DC (BLDC) motor drives, DC-DC converter primary switches, synchronous rectification in telecom and server supplies, and high-current battery management switching. The AEC-Q101 qualification specifically targets automotive OEMs requiring ASIL-rated power conversion. When designing with this part, ensure the gate drive voltage exceeds the threshold by at least 10 V for full enhancement and minimum R<sub>DS(on)</sub>. The exposed drain pad of the PG-TDSON-8-34 package must be soldered to a sufficiently large copper area (recommended 1 oz copper, minimum 1 cm²) to keep junction temperature within the 175°C maximum rating under full-load conditions. This page synthesizes distributor pricing, parametric comparisons, and practical PCB design notes for the IAUC100N08S5N043ATMA1 in a format optimized for both engineers evaluating power stage designs and AI-assisted part selection tools.
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
The Infineon IAUC100N10S5L040ATMA1 is an N-channel enhancement-mode logic-level power MOSFET built on Infineon's OptiMOST 5 process, rated for 100 V VDS, 100 A continuous drain current at Tc, and an ultra-low 4 mΩ maximum on-state resistance, housed in a PG-TDSON-8-34 (SuperSO8 5x6) surface-mount package. An automotive-grade power MOSFET is a voltage-controlled switching transistor engineered for high-current, high-efficiency DC-DC conversion and motor drive in vehicles, where it sits within the broader semiconductor hierarchy as discrete MOSFET -> power transistor -> power semiconductor -> semiconductor device. The IAUC family is qualified to AEC-Q101 standards and is designed specifically for 12 V and 24 V automotive board nets, where switching losses, conduction losses, and ruggedness under repetitive avalanche events dominate the design budget. Key features of the IAUC100N10S5L040ATMA1 include a logic-level gate drive threshold (Vgs(th) compatible with 4.5 V microcontrollers), 167 W continuous power dissipation at Tc, 100% avalanche-tested ruggedness per Infineon's automotive qualification flow, MSL1 moisture sensitivity up to 260 °C peak reflow, and suitability for automatic optical inspection (AOI). The OptiMOST 5 cell architecture reduces gate charge Qg and output capacitance Coss versus the previous generation, enabling lower switching losses at high di/dt. Technically, the device uses a vertical N-channel DMOS structure with a trench gate, optimized for low RDS(on) at small package footprint. The PG-TDSON-8-34 footprint exposes the drain pad for direct thermal conduction into the PCB copper, allowing the part to deliver 100 A continuous with proper board thermal design. A single-pulse avalanche energy rating and 100% avalanche-tested production screen make it robust against unclamped inductive switching events common in solenoid, relay, and motor-drive applications. Typical applications include automotive 12 V/24 V ECU power distribution, electric power steering (EPS), braking systems, DC-DC converters, and high-current motor drives in body and chassis electronics. The logic-level gate makes it directly compatible with microcontroller PWM outputs without a gate-driver charge pump. When designing with this MOSFET, observe the SOA curves and ensure the drain tab is soldered to a copper area sized for the application's continuous dissipation. Place the gate driver close to the gate pin to minimize parasitic inductance that would otherwise slow switching edges and increase ringing.
IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon
The Infineon IAUC100N10S5L054ATMA1 is a 100V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, featuring an ultra-low on-state resistance of 5.4 mΩ maximum and a continuous drain current rating of 101 A (Tj) with 130 W power dissipation (Tc). The device is housed in a surface-mount PG-TDSON-8-34 package with an exposed drain pad for low thermal resistance, and it is AEC-Q101 qualified for automotive-grade reliability. It is part of Infineon's IAUC family targeting high-current automotive applications such as LED lighting front-ends and 12V/24V motor control. An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled three-terminal switching device that uses a positive gate-to-source voltage to create an n-type conduction channel between drain and source. Power MOSFETs like the IAUC100N10S5L054ATMA1 sit within the broader hierarchy of discrete semiconductors → transistors → FETs → MOSFETs, and are the workhorse switches in synchronous buck converters, BLDC motor drives, hot-swap controllers, and high-current load switches where fast switching, low conduction loss, and small footprint are required. Key differentiating features include the 5.4 mΩ max R_DS(on) at 10 V V_GS, an optimized gate charge (Qg) profile for reduced switching losses, and the rugged PG-TDSON-8-34 footprint that combines a small 5x6 mm outline with a thermally efficient drain tab. Compared to older trench MOSFET generations, the OptiMOS 5 process delivers lower FOM (R_DS(on) × Qg) and improved avalanche ruggedness, enabling higher power density designs at 100V bus voltages. The architecture uses Infineon's advanced trench-cell structure with a low-resistance substrate connection, achieving both low R_DS(on) per unit area and excellent dv/dt immunity. The PG-TDSON-8-34 package supports a solderable drain pad on the underside that doubles as a thermal via interface to inner PCB copper planes, enabling the 130 W Tc dissipation rating when properly mounted. Typical applications span automotive LED lighting drivers (front-light LED front-ends, daytime running lights), 12V/48V motor control for pumps and fans, battery management systems, and DC-DC converter high-side switches. AEC-Q101 qualification and the wide -55°C to +175°C operating range make it well suited to under-hood and chassis electronics where ambient temperatures are uncontrolled. When designing with this part, pay attention to the layout of the source-sense (Kelvin) connection if available, the gate-drive voltage headroom, and the PCB copper area beneath the drain pad — these directly impact achievable R_DS(on) and junction temperature in real operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet.
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUC100N10S5N040ATMA1 is an N-channel enhancement-mode OptiMOS-5 power MOSFET rated at 100 V VDS, 4 mΩ maximum R<sub>DS(on)</sub>, and 100 A continuous drain current (Tc) in a PG-TDSON-8-34 (5x6 mm) surface-mount package. Built on Infineon's OptiMOS-5 100 V process platform, the device targets automotive and industrial high-current switching applications where low conduction loss and high avalanche ruggedness are required. The part is qualified to AEC-Q100 and is 100% avalanche-tested, with MSL1 rating up to 260 °C peak reflow. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate conduction between its source and drain terminals. N-channel MOSFETs such as this part require a positive gate drive relative to source to enhance the channel and allow current flow; they are the dominant choice for low-side and high-side switching in DC-DC converters, motor drives, and load switches. The MOSFET family hierarchy is: power MOSFET -> discrete semiconductor -> switching device -> power electronics. Within Infineon's portfolio, this part belongs to the OptiMOS-5 100 V "100A-class" tier, distinguished from 60 V and 80 V OptiMOS-5 siblings by its higher VDS rating. Key features include a 4 mΩ maximum on-resistance at VGS = 10 V, 167 W maximum power dissipation at Tc = 25 °C, integrated ESD protection, and a logic-level-compatible gate threshold. The PG-TDSON-8-34 footprint exposes a large thermal pad that, combined with RthJC = 0.9 K/W, allows the silicon die to carry up to 140 A at 25 °C case when properly cooled. Compared to older OptiMOS-3 generations, the OptiMOS-5 process typically delivers 30-40% lower R<sub>DS(on)</sub>*FOM and improved switching figure-of-merit, which reduces both conduction and switching losses in high-frequency power stages. Typical applications include automotive 48 V mild-hybrid loads, electric power steering (EPS) controllers, battery management system (BMS) protection FETs, DC-DC converter primary-side switches, and high-current ORing / hot-swap circuits. The 100 V rating provides comfortable margin for 48 V automotive bus transients clamped below 100 V, while the 100 A continuous current rating supports direct drive of high-power actuators without paralleling multiple devices. When designing with this part, designers should optimize PCB layout to minimize source-inductance loop area between the gate driver and the source Kelvin connection, use a 10 V gate drive for full enhancement, and ensure the thermal pad is soldered to a sufficiently large copper pour to keep Tj below 150 °C under worst-case SOA conditions. The "ATMA1" suffix indicates Tape & Reel packaging for high-volume assembly, while the bare "IAUC100N10S5N040" denotes the same die in alternative packaging or larger reel quantities. This page synthesizes distributor pricing across DigiKey, Mouser, Arrow, and TME, drop-in alternative cross-references validated against the same PG-TDSON-8-34 footprint, and practical design notes not duplicated in the Infineon datasheet. Where datasheet parameters are not available in the verified web data, fields are explicitly marked to preserve data authenticity for engineering review.
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
The Infineon IAUC120N04S6L005ATMA1 is an automotive-grade N-channel power MOSFET rated at 40 V VDS, 120 A continuous drain current (Tj), and 187 W power dissipation (Tc), housed in the compact PG-TDSON-8-53 (5x6 mm) surface-mount package with an exposed thermal pad. The device features an ultra-low R_DS(on) of 0.55 mΩ at VGS=10 V and 60 A, and 0.85 mΩ at VGS=4.5 V, making it one of the lowest-on-resistance 40 V MOSFETs in the Infineon OptiMOS 6 family for automotive 12 V and industrial 24 V rails. The -L005 suffix identifies a 0.55 mΩ R_DS(on) bin, while the ATMA1 suffix denotes tape-and-reel packaging and AEC-Q101 automotive qualification. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is driven above its threshold voltage. Power MOSFETs sit within the broader power-semiconductor hierarchy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. They are the workhorse switching element in synchronous rectification, hot-swap, e-fuse, motor drive, and load-switch applications, where low conduction loss translates directly into higher system efficiency and smaller heatsinks. Key features include 40 V drain-source breakdown (V_(BR)DSS), 120 A continuous drain current rating, 0.55 mΩ maximum on-resistance at VGS=10 V, and total gate charge (Qg) of 177 nC at VGS=10 V. The device uses trench-based OptiMOS 6 technology with an intrinsic body diode capable of supporting commutation transients, and is rated for operation from -55 °C to +175 °C junction temperature. The PG-TDSON-8-53 footprint is pin-to-pin compatible with the broader Infineon OptiMOS 5/6 40 V family. The IAUC120N04S6L005ATMA1 leverages Infineon's latest OptiMOS 6 generation trench cell design to minimize both conduction loss (low R_DS(on)) and switching loss (moderate Qg with low Qgd/Qgs ratio). A 175 pF output capacitance C_oss and 11.2 nF C_iss enable fast switching transitions suitable for high-frequency (>500 kHz) synchronous buck and hard-switching topologies. The integrated gate-protection structure provides ±16 V VGS tolerance. Typical applications include automotive 12 V battery switching, ECU power distribution, DC-DC converter synchronous rectification, motor drive half-bridges, USB-PD and e-fuse circuits, and hot-swap controllers. In automotive 12 V systems it can carry continuous currents well above 100 A with minimal conduction loss. Industrial applications include 24 V solar optimizers, battery management systems, and high-current point-of-load converters. When designing with this MOSFET, carefully observe the maximum junction temperature of 175 °C and derate appropriately. The exposed pad must be soldered to a sufficiently large copper area (≥1 in² recommended) to keep RthJA within datasheet limits. A 10 Ω gate resistor plus a local 100 nF VDD bypass cap near the gate-driver supply is recommended to suppress parasitic ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, drawing on verified Infineon data and cross-brand parametric equivalents.
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
The Infineon IAUC120N04S6L009ATMA1 is a 40 V N-channel OptiMOS™ 6 power MOSFET rated for 120 A continuous drain current (150 A at Tc per datasheet header) with an ultra-low 0.9 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in the 5x6 mm leadless PG-TDSON-8-34 (SS08) surface-mount package. It is qualified to AEC-Q101 for automotive power applications and dissipates up to 150 W at T<sub>C</sub> = 25 °C, making it well suited to high-current 12 V and 24 V automotive systems. Background: A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that regulates current flow between drain and source terminals. OptiMOS-6 is Infineon's sixth-generation 40 V trench MOSFET platform optimized for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit. Within the broader taxonomy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. In modern 12 V/24 V automotive and industrial systems, low-R<sub>DS(on)</sub> 40 V N-channel MOSFETs sit at the lowest level of the power-conversion hierarchy, immediately driving solenoids, motors, and synchronous-rectifier stages. Key features of the IAUC120N04S6L009ATMA1 include 0.9 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level compatible V<sub>GS(th)</sub> suitable for direct GPIO drive from microcontrollers, 150 A pulsed drain current capability, and an operating junction temperature range of -55 °C to +175 °C. The leadless PG-TDSON-8-34 package provides a very low package resistance and inductance contribution and a top-side exposed pad for efficient PCB thermal spreading. Typical applications span 12 V/24 V automotive high-current switching - including electronic power steering (EPS), brake-by-wire electro-hydraulic actuators, fuel-injection solenoids, and high-current DC/DC converters for 48 V-to-12 V or 24 V-to-12 V rails. The very low R<sub>DS(on)</sub> directly translates into reduced conduction loss, lower junction temperature rise, and therefore higher continuous current capability on the same PCB footprint. When designing with this part, the V<sub>GS</sub> drive level must be considered - the maximum R<sub>DS(on)</sub> is specified at V<sub>GS</sub>=10 V, and the device remains fully enhanced at logic levels near 4.5 V. Designers should also observe the safe operating area boundary to avoid exceeding avalanche energy during turn-off of inductive loads. This page synthesizes distributor pricing, automotive-grade alternatives, and practical design considerations that are not compiled on a single manufacturer page. This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone. AEC-Q101 qualification, PG-TDSON-8-34 footprint, and 40 V / 120 A headline ratings are sourced from the manufacturer product page and authorized distributor listings.
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
The Infineon IAUC120N04S6L012ATMA1 is a 40 V N-channel automotive MOSFET from Infineon's OptiMOS 6 40V family, housed in a surface-mount PG-TDSON-8 (TDSON) package with an exposed drain pad. It is rated for 120 A continuous drain current at TC and 115 W power dissipation, and targets high-current 12 V automotive and industrial power-conversion applications where low conduction loss and high robustness are required. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel enhancement-mode MOSFETs like this one are the dominant switching element in low-voltage synchronous buck converters, half-bridges, and full-bridges. Within the wider taxonomy, this part sits as: N-channel MOSFET → power MOSFET → discrete semiconductor → semiconductor. The OptiMOS 6 family is Infineon's 6th-generation trench-technology platform for ≤40 V and ≤100 V rails, optimised for lower RDS(on) per mm² and lower switching losses versus the prior OptiMOS 5 generation. Key electrical features include a maximum drain-source voltage VDS of 40 V, a typical on-state resistance RDS(on) of 1.2 mΩ at 10 V VGS, and a continuous drain current ID of 120 A at TC. The device is qualified to AEC-Q101 for automotive use, and the part code suffix 'A' indicates automotive grade. The PG-TDSON-8 footprint with a large exposed drain pad provides a low thermal resistance path, supporting sustained high-current operation on FR-4 PCB substrates when properly laid out with sufficient copper area. OptiMOS 6 technology uses an advanced split-gate trench structure that reduces both conduction loss (lower RDS(on) per cell) and switching loss (lower gate charge Qg and output capacitance Coss). Compared with the prior OptiMOS 5 generation at the same voltage class, the 1.2 mΩ figure represents a substantial improvement, enabling either higher current density on the same footprint or cooler operation at the same load. This is critical for 12 V automotive systems that must deliver high current in constrained PCB areas. Typical applications include 12 V automotive ECU power supplies, electric power steering (EPS), battery management system (BMS) protection, DC-DC converter high-side switches, motor drive H-bridges, hot-swap / OR-ing controllers, and industrial 24 V/36 V high-current switching. The automotive-grade qualification makes it suitable for under-the-hood and chassis electronics where ambient temperature can exceed 105 °C. When designing with this part, prioritise a low-inductance PCB layout: minimise the source-loop and gate-loop area, use multiple vias under the exposed pad for thermal dissipation, and choose a gate driver capable of sourcing/sinking >1 A to switch the Qg quickly. A 10 kΩ gate-source pull-down is recommended to keep the MOSFET off during controller reset. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single source for selecting and sourcing the IAUC120N04S6L012ATMA1 for next-generation 12 V automotive and industrial power designs.
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
The Infineon IAUC120N04S6N009ATMA1 is a 40 V N-channel OptiMOS 6 power MOSFET rated at 120 A continuous drain current (Tc) with an ultra-low R<sub>DS(on)</sub> of 0.9 mΩ, housed in a surface-mount PG-TDSON-8-33 (5x6 mm) package and qualified to AEC-Q101 for automotive applications. It delivers up to 150 W of power dissipation (Tc) using Infineon's latest 40 V OptiMOS 6 silicon technology, which minimizes conduction losses in high-current switching paths while maintaining robust avalanche and short-circuit ratings. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or interrupt current in power conversion circuits. N-channel MOSFETs such as this one are the dominant building blocks of buck converters, motor drives, and OR-ing hot-swap controllers, sitting hierarchically under discrete semiconductors, then power MOSFETs, then automotive-grade power switches. The IAUC120N04S6N009ATMA1 occupies the low-voltage, very-low-R<sub>DS(on)</sub> tier of that family, where conduction loss—not switching loss—dominates total dissipation. Key differentiators include 0.9 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, 120 A continuous drain current at 25 °C case, 40 V drain-source breakdown voltage, and an optimized SS08 leadless package footprint. According to the Infineon datasheet, the die is capable of carrying 300 A at 25 °C when limited only by package thermal resistance (R<sub>thJC</sub> = 1 K/W). The device is also characterized for low gate charge, low Q<sub>rr</sub>, and an operating junction temperature range of -55 °C to +175 °C. OptiMOS 6 technology uses a shielded-gate trench architecture that achieves a superior figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) versus older OptiMOS 5 generations. This makes the part well-suited to high-frequency synchronous rectification in 12 V/24 V automotive systems where every milliohm of conduction loss translates directly into wasted heat, reduced efficiency, and the need for heavier copper or heatsinking on the PCB. Typical applications include 12 V and 24 V automotive ECU power stages, battery management system (BMS) protection FETs, DC-link disconnect switches in mild-hybrid 48 V systems, electric power steering (EPS) controllers, and high-current USB-PD / eFuse loads. The wide safety margin between 40 V V<sub>DSS</sub> rating and 24 V automotive load-dump transients also makes it usable in truck and industrial 24 V bus systems. When designing with this part, place gate drive resistors of 10-47 Ω close to the gate pin to control ringing, and ensure the source-sense (Kelvin) connection is used when available. For 100 % duty-cycle hot-swap service, derate continuous current to 80 A or add copper pour to keep junction rise below 100 °C. The exposed drain pad must be soldered to at least 6 cm² of copper for the datasheet thermal numbers to hold. This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
The Infineon IAUC120N04S6N010ATMA1 is an automotive-grade 40 V N-channel power MOSFET built on Infineon's latest OptiMOS 6 40 V technology, housed in the 5x6 mm PG-TDSON-8-34 leadless surface-mount package, and rated for 150 A continuous drain current (Tc) with 150 W power dissipation (Tc). It delivers an ultra-low typical on-state resistance of 1.0 mΩ at 10 V VGS, making it one of the lowest-RDS(on) 40 V parts in this footprint. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used as the primary switching element in DC-DC converters, motor drives, and load-management circuits. It belongs to the broader power-semiconductor hierarchy: power MOSFET -> discrete semiconductor -> active electronic component. The 40 V OptiMOS 6 family specifically targets 12 V/24 V automotive and industrial bus rails where high current and very low conduction loss are required. Key specifications include 40 V drain-source breakdown (V(BR)DSS), 1.03 mΩ typical RDS(on) at 10 V VGS (per LCSC datasheet excerpt), 3 V typical threshold voltage (VGS(th)) measured at 90 µA, and an AEC-Q101 qualified die intended for under-the-hood and chassis safety applications. The PG-TDSON-8-34 package exposes the drain for direct PCB heatsinking via a thermal pad, enabling sustained high-current operation. The OptiMOS 6 platform improves figure-of-merit (RDS(on) x Qg) versus OptiMOS 5 by approximately 30%, reducing both conduction and switching losses. This efficiency gain is particularly valuable in high-frequency synchronous rectification and automotive 48 V mild-hybrid architectures where every milliohm of RDS(on) translates directly into thermal and fuel-economy budgets. Typical applications include automotive 12 V/24 V brushless DC (BLDC) motor drives, electronic power steering (EPS), body-electronics load switches, DC-DC converter high-side switches, and reverse-polarity protection circuits. The part is also well suited to industrial high-current point-of-load regulators. When designing with this MOSFET, ensure the PCB thermal pad receives a copper pour of at least 1 sq. cm per ampere of continuous load, and keep the gate-drive loop compact to minimise ringing. VGS must be driven above 10 V to achieve the datasheet 1 mΩ RDS(on); driving below 8 V significantly increases losses.
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
The Infineon IAUC120N06S5L011ATMA1 is an N-channel 60 V OptiMOS™ 5 power MOSFET delivering 310 A continuous drain current (Tj) and 1.1 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in the automotive-grade PG-TDSON-8-53 surface-mount footprint. The IAUC120N06S5L011 datasheet names three headline parameters: 60 V drain-to-source breakdown, 1.1 mΩ on-resistance, and 120 A continuous current (per Infineon's marketing ordering code), with the package dissipation rated at 188 W at T<sub>C</sub> = 25 °C. The S5 family designation indicates the latest OptiMOS 5 60 V generation, which reduced R<sub>DS(on)</sub> by roughly 30 % and improved figure of merit (FOM) versus the previous OptiMOS 3 generation. An N-channel power MOSFET is a voltage-controlled majority-carrier device where a positive gate-to-source voltage inverts the surface of the body region to form a conducting n-channel between source and drain. Power MOSFETs are the foundational switching element in modern DC-DC converters, motor drives, and load switches; the N-channel variant is preferred over P-channel in high-current paths because electron mobility is roughly 2-3× higher than hole mobility, yielding lower on-resistance for the same silicon area. The 60 V class covers 12 V automotive bus, 24 V mild-hybrid, 48 V boardnet, and telecom hold-up applications. Key features of the IAUC120N06S5L011ATMA1 include the very low 1.1 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub> = 10 V, low gate charge for fast switching, an avalanche-rated body diode, and 100 % Rg-tested and UIL-tested parts per Infineon's automotive quality flow. The PG-TDSON-8-53 (also known as TDSON-8 FL) leadless package has a metal drain tab on the bottom side that doubles as the thermal pad, allowing direct soldering to a copper pour for very low thermal resistance. OptiMOS 5 also introduced a controlled Q<sub>rr</sub> body-diode trade-off suitable for synchronous-rectifier topologies. Typical applications for this part include 12 V and 48 V automotive DC-DC converters (e.g. buck/boost between 12 V battery and 48 V mild-hybrid bus), high-current motor drive H-bridges (EPS, water pump, fan), OR-ing and hot-swap controllers in server 12 V rails, and battery protection FETs in e-scooter and e-bike packs. AEC-Q101 automotive qualification makes it a drop-in for safety-relevant loads. Use it where the absolute minimum conduction loss is required and the layout can accept the large 5 mm × 6 mm TDSON footprint. When designing with this MOSFET, mind the layout: the source-sense (Kelvin) pin on pin 4 must be tied to the gate-drive return to prevent C<sub>gd</sub>-induced turn-on. The exposed pad must be soldered to a copper area of at least 100 mm² on each PCB side for the published 188 W T<sub>C</sub> rating; without that copper, derate aggressively. For paralleled parts, source-sense resistors mitigate current imbalance.
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC120N06S5L015ATMA1 is an N-channel OptiMOS 5 power MOSFET rated for 60 V VDS and 1.5 mΩ maximum RDS(on), housed in a surface-mount PG-TDSON-8-43 package. It supports continuous drain current of 235 A at Tj (with appropriate PCB thermal design) and power dissipation of 167 W at Tc, and is qualified to AEC-Q101 for automotive DC-DC converters and battery disconnect switches. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and convert electrical energy. Within the broader taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS 5 family is Infineon's fifth-generation trench MOSFET platform, optimized for very low on-resistance per unit silicon area, fast switching, and low gate charge to minimize conduction and switching losses in high-current power paths. Key features include 1.5 mΩ maximum RDS(on) at VGS=10 V, ultra-low gate charge of 88 nC typical for fast switching at high frequency, and an operating temperature range suitable for automotive underhood environments. The PG-TDSON-8-43 package exposes the drain through a large metal tab for direct PCB cooling, enabling very high current handling in a compact 5x6 mm footprint. Technical depth: the device uses Infineon's advanced OptiMOS 5 trench cell architecture which trades slightly higher gate capacitance for dramatically lower RDS(on) per area versus prior generations. The 60 V drain-source rating gives substantial margin over 12 V and 24 V automotive bus voltages, supporting transient robustness up to the avalanche rating. The 88 nC total gate charge keeps driver losses low at 100 kHz+ switching frequencies typical of high-current synchronous DC-DC converters. Typical applications include high-current automotive 12 V and 48 V DC-DC converter stages, battery isolation switches in electric vehicle powertrains, motor drive inverter half-bridges, and high-power OR-ing / hot-swap circuits in server and telecom power supplies. The part is also well suited to industrial synchronous rectification where every milliohm of conduction loss translates into tangible efficiency gains. Design consideration: although the silicon can carry 235 A continuously at Tj, achieving this in practice requires substantial PCB copper pour and thermal vias under the exposed pad; otherwise the junction will derate the usable current well below the headline number. Plan thermal management as the first step, not the last. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design guidance for the IAUC120N06S5L015ATMA1 that go beyond the manufacturer datasheet abstract.
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC120N06S5L032ATMA1 is a 60 V N-channel power MOSFET rated at 120 A continuous drain current (Tj) with an industry-leading 3.2 mOhm maximum R_DS(on), housed in a surface-mount PG-TDSON-8-34 (5x6 mm) package. Built on Infineon's OptiMOS 5 60 V technology platform, this part targets automotive power management and high-current synchronous-rectification applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. The N-channel enhancement-mode MOSFET, the dominant type in low-voltage power systems, places the load between the supply rail and the low-side drain path so that a positive gate-to-source voltage turns the device on. Power MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. OptiMOS 5 is Infineon's fifth-generation 60 V trench process, designed to lower both conduction loss (low R_DS(on)) and switching loss (low Q_G and gate charge) versus prior generations. Key parametric advantages of the IAUC120N06S5L032ATMA1 include 3.2 mOhm R_DS(on) at 10 V V_GS, 94 W P_D at T_C = 25 C, and an industry-standard SSO8 (5x6 mm) footprint that drops into existing 60 V high-current designs. The part is fully automotive-qualified to AEC-Q101, supporting ADAS power management, 12 V battery-connected load switching, and motor-drive half-bridges in chassis and powertrain ECUs. From an architecture standpoint, the OptiMOS 5 cell shrinks gate charge and output capacitance while keeping a robust body diode for hard-switched topologies. This enables lower switching-node ringing and reduced driver-stage stress, particularly when paired with 12 V gate drivers in half-bridge or buck-converter synchronous-rectifier positions. Typical applications include 12 V automotive power distribution, ADAS sensor and ECU power rails, BLDC motor-drive low-side switches, and high-current synchronous rectification in telecom and server DC-DC converters. When designing with this part, keep source-lead inductance short and place the gate-drive loop area tight to control ringing; verify T_j(max) at worst-case I_D and R_thJA in the PG-TDSON-8-34 footprint, since this 5x6 mm package requires an appropriately sized copper pour for thermal relief. This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not summarized in the manufacturer datasheet, giving engineers a faster path to sourcing and substitution decisions.
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
The Infineon IAUC120N06S5N011ATMA1 is a 60 V N-channel OptiMOS™-5 power MOSFET in a PG-TDSON-8-53 (SSO8 5x6) surface-mount package, qualified to AEC-Q101 for automotive use. It delivers a maximum drain current of 310 A (Tj) and continuous drain current (Id) of 120 A with an ultra-low typical on-resistance of 1.1 mΩ at 10 V Vgs, dissipating up to 188 W at Tc=25°C. The part uses Infineon's 5th-generation OptiMOS trench technology to minimize conduction and switching losses in high-current 12 V/24 V automotive systems. A power MOSFET is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. N-channel enhancement-mode MOSFETs like this one are the workhorse of low-voltage power conversion: when Vgs exceeds the threshold, the device conducts; when Vgs is pulled low, it blocks. OptiMOS-5 represents Infineon's 5th-generation trench architecture, which lowers Rds(on) per unit silicon area, reduces gate charge (Qg), and improves body-diode ruggedness. In the broader taxonomy, this part is a discrete power MOSFET within the power semiconductor family used in DC-DC converters, motor drives, and load switches. Key features include 1.1 mΩ typical Rds(on) at Vgs=10 V, 60 V Vdss breakdown voltage, ±20 V Vgs rating, and an integrated ESD-protected gate. The SSO8 5x6 package provides a low thermal resistance path (RthJC around 0.8 C/W typical) and is designed for top-side cooling on PCB. The part is optimized for normal-level gate drive (10 V) and supports high-frequency switching up to several hundred kHz in synchronous rectification stages. AEC-Q101 qualification plus automotive-grade reliability make it suited to under-the-hood and chassis electronics. The IAUC120N06S5N011ATMA1 uses Infineon's advanced OptiMOS-5 trench cell design, which provides superior figure-of-merit (FOM = Rds(on) × Qg) compared to previous generations. This translates directly to lower switching losses in high-frequency DC-DC converters and reduced conduction losses in high-current paths. The robust body diode supports synchronous rectification without additional clamp protection in most topologies. Typical applications include automotive 12 V/24 V DC-DC converters (buck and synchronous rectification stages), eFuse and battery protection FETs in 12 V Li-ion systems, motor control H-bridges (BLDC, EPS), LED headlight drivers, and USB-PD high-current load switches. Its low Rds(on) minimizes I²R losses at 100 A+ continuous currents, which is critical for thermal headroom in compact automotive modules. When designing with this MOSFET, ensure the gate driver delivers 10 V Vgs for full enhancement. Layout matters: place the source sense (Kelvin connection) close to the source pad to avoid Rds(on) inflation. Thermal management should account for the high current capability - a single 1 oz copper pour on a 4-layer FR4 board may need to be supplemented with thermal vias under the exposed pad. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a consolidated engineering reference for IAUC120N06S5N011ATMA1 selection and procurement.
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
The Infineon IAUC120N06S5N017ATMA1 is an N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS™ 5 process, rated for 60 V VDS and 120 A continuous drain current (Tj) in a surface-mount PG-TDSON-8-43 (TDSON-8 EP) package. It features an industry-leading R<sub>DS(on)</sub> of just 1.7 mΩ at VGS = 10 V, 167 W power dissipation (Tc), AEC-Q101 automotive qualification, and 100% avalanche-tested reliability for high-stress switching environments. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in power-conversion circuits. Within the broader power electronics taxonomy, MOSFETs sit alongside IGBTs as the dominant low- to medium-voltage switching devices, hierarchically classified as: MOSFET → power transistor → discrete semiconductor. The OptiMOS™ 5 family represents Infineon's fifth-generation trench technology, delivering the lowest figure of merit (R<sub>DS(on)</sub> × Qg) in 60 V-class automotive MOSFETs, which is critical for reducing conduction and switching losses in high-frequency converters. Key features include a typical gate charge Qg of 95.9 nC at VGS = 10 V, an input capacitance Ciss of 6.952 nF, and a low reverse-transfer capacitance Crss of 84 pF, enabling fast switching transitions in the 50-200 kHz range. The device's low on-resistance minimizes conduction losses, while the optimized gate charge reduces driver losses. The TDSON-8 EP package with exposed die pad delivers a low thermal resistance path from junction to case, supporting continuous high-current operation with minimal external heatsinking. Architecturally, the device uses a charge-balanced trench-gate cell structure that achieves exceptionally low R<sub>DS(on)</sub> per unit area while maintaining robust short-circuit capability. The 100% avalanche-tested rating ensures reliability during unclamped inductive switching events common in motor and solenoid drive applications. Typical applications include automotive 12 V/24 V battery-driven systems such as electric power steering (EPS), braking systems, body electronics, DC-DC converters, and motor control for pumps and fans. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis-mounted modules where temperature cycling and vibration stress are severe. When designing with this part, ensure VGS is driven to 10 V for the rated R<sub>DS(on)</sub>; a gate-source voltage below 6 V risks entering the Miller plateau region and dramatically increasing conduction losses. For high-di/dt switching, minimize gate-loop inductance and use a Kelvin-source connection when available. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUC120N06S5N022ATMA1 is an N-channel OptiMOS-5 power MOSFET rated at 60 V drain-source voltage with a maximum on-resistance of 2.2 mΩ and a continuous drain current capability of up to 170 A (Tj), housed in a surface-mount PG-TDSON-8-34 (TDSON EP 5x6) package. Designed on Infineon's advanced OptiMOS-5 trench technology platform, this device delivers an optimized figure of merit (FOM) for high-current switching applications while reducing both conduction and switching losses versus earlier OptiMOS generations. A power MOSFET such as the IAUC120N06S5N022 is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. MOSFETs sit within the broader transistor taxonomy, which is a subset of discrete semiconductors; they are foundational building blocks in modern switched-mode power supplies (SMPS), motor drives, and load-switching circuits. Low-voltage N-channel MOSFETs (≤100 V) typically target synchronous rectification, high-current DC-DC conversion, and battery protection, where minimizing RDS(on) and gate charge directly improves system efficiency. This part is AEC-Q101 qualified, positioning it for automotive electronics where reliability under harsh thermal and electrical stress is mandatory. Key features include a 60 V VDS rating (40 V typical extended operating margin), an exceptionally low maximum RDS(on) of 2.2 mΩ at VGS=10 V, an operating temperature range suitable for automotive environments, and a drain power dissipation of 136 W (Tc). The PG-TDSON-8-34 package provides a low thermal-resistance path through its exposed pad, enabling efficient heat extraction into the PCB copper plane. The OptiMOS-5 cell design further reduces gate charge (Qg) and output capacitance (Coss), improving switching performance at high frequencies. The AEC-Q101 automotive qualification, halogen-free construction, and RoHS compliance make this device a drop-in choice for safety-critical powertrain and chassis applications. Typical applications include high-current synchronous rectification in 48 V automotive systems, battery management and protection in 12 V/24 V architectures, motor drive H-bridges for electric vehicle auxiliary loads, and high-efficiency DC-DC converters. The combination of ultra-low on-resistance and a compact TDSON footprint is particularly attractive for power-dense designs where board space is constrained but thermal performance must remain robust. When designing with this part, ensure the PCB copper pour under the exposed pad is maximized to keep junction temperature within safe limits, and select a gate-drive voltage of 10 V for full enhancement; at 4.5 V VGS the RDS(on) is higher and must be re-evaluated against thermal budgets.
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
The Infineon IAUC120N06S5N032ATMA1 is an N-channel 60 V automotive OptiMOS-5 power MOSFET rated at 120 A continuous drain current (Tj) and 94 W power dissipation (Tc), housed in a PG-TDSON-8-34 (SSO8 5x6) surface-mount package with an exposed thermal pad. Key parameters include a maximum on-resistance of 3.2 mOhm at 10 V VGS, 47 nC maximum gate charge, and an operating junction temperature range of -55C to +175C. The part is AEC-Q101 qualified for automotive applications and ships on a 13-inch tape-and-reel carrier. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which the gate field modulates a conducting channel between drain and source. N-channel power MOSFETs like this one are the dominant building block of synchronous buck converters, motor half-bridges, and hot-swap controllers because of their low on-resistance per unit silicon area. Within the broader taxonomy, MOSFETs are a sub-category of discrete transistors, themselves within discrete semiconductors and ultimately the power management ecosystem that converts and conditions electrical energy. The OptiMOS-5 process technology delivers industry-leading figure-of-merit (FOM = RDS(on) x Qg), reducing switching losses by approximately 30% versus the previous OptiMOS-3 generation. The low 3.2 mOhm RDS(on) minimizes conduction loss in high-current paths, while the 47 nC Qg enables fast switching at high frequency. The 60 V drain-source voltage rating suits 12 V automotive systems including load dump transients (where battery voltage can briefly reach 35-40 V), USB Power Delivery, and 24 V mild-hybrid bus rails. Typical applications include automotive 12 V load switches, electric power steering (EPS), brake-by-wire, DC-DC converter high-side switches, and ADAS sensor power rails. The PG-TDSON-8-34 package provides a low thermal resistance path (sub-1 C/W junction-to-case with proper PCB footprint), enabling continuous 120 A operation at moderate ambient temperatures with appropriate copper area. When designing with this device, allocate sufficient PCB copper area for the exposed thermal pad to achieve rated continuous current. Use a gate driver capable of sourcing/sinking at least 1-2 A peak to switch the 47 nC gate charge within the target transition time. Add a TVS diode across drain-source if the application involves inductive loads, since unclamped avalanche can exceed the part's SOA and lead to failure. This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, thermal calculations, and PCB layout guidance not consolidated in any single manufacturer document, providing engineers with the practical context needed for first-pass design success.
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
The Infineon IAUC28N08S5L230ATMA1 is an 80 V N-channel power MOSFET built on Infineon's OptiMOS-5 technology, rated for 28 A continuous drain current (Tc) and 38 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-33 (5x6 SSO8) package. The part delivers a typical R<sub>DS(on)</sub> of 23 mΩ at V<sub>GS</sub>=10 V, providing low conduction loss for high-current automotive switching stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device that switches or amplifies power by varying channel conductivity under an insulated gate. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied; they belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. Automotive-grade N-channel MOSFETs in the 60-100 V class are the workhorse switches for 12 V and 24 V vehicle electrical subsystems, used in everything from LED drivers and motor control to DC-DC converter power stages and battery management. Key features include a maximum drain-source voltage V<sub>DS</sub> of 80 V, threshold voltage V<sub>GS(th)</sub> in the 2-3 V range, an avalanche-rated single-pulse body diode, and an operating junction temperature up to 175 °C. The PG-TDSON-8-33 (5x6 mm) package exposes the drain pad to the PCB copper pour, giving a low junction-to-case thermal resistance that is critical for continuous high-current automotive operation. The OptiMOS-5 process achieves a strong figure of merit (R<sub>DS(on)</sub> × Q<sub>g</sub>) that translates to lower switching and conduction loss compared with older MOSFET generations. Typical applications include 12 V automotive LED lighting drivers, electronic power steering (EPS) and other powertrain actuators, DC-DC converter primary-side switches in 12V/48V mild-hybrid systems, and reverse-polarity / load-dump protection circuits. The 80 V rating gives sufficient headroom above the 24 V jump-start and 35 V load-dump transients required by ISO 7637-2. When designing with this part, place the gate drive as close to the gate pin as possible to minimize parasitic inductance, and add a gate-source resistor (typ. 10-100 kΩ) to prevent false turn-on from drain dv/dt. Verify SOA at the intended switching frequency and case temperature; the 38 W Tc rating is the datasheet maximum and thermal design margin must be preserved. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IAUC41N06S5L - 60V 10mΩ OptiMOS-5 N-Channel MOSFET | Infineon
The Infineon IAUC41N06S5L is a 60 V, 10 mΩ N-channel OptiMOS-5 power MOSFET in a logic-level, automotive-qualified package, optimized for high-current switching in LED lighting, infotainment, and ADAS applications. Housed in a TDSON-8 (PG-TDSON-8) surface-mount package with an exposed drain pad, it combines low on-state resistance (R<sub>DS(on)</sub> = 10 mΩ typical at V<sub>GS</sub>=10 V) with a logic-level gate threshold that allows direct drive from 3.3 V microcontrollers and 5 V logic outputs without a gate-driver stage. An N-channel power MOSFET is a voltage-driven majority-carrier device that controls conduction between drain and source via an electric field at the gate-insulator interface. MOSFETs sit in the broader discrete-semiconductor hierarchy alongside BJTs and IGBTs and are favored for switching power conversion because of high switching speed, no body-diode reverse-recovery charge (in many modern trench designs), and zero static gate current. The OptiMOS-5 process from Infineon represents a fifth-generation trench-FET architecture tuned for low R<sub>DS(on)</sub> × Q<sub>g</sub> figure of merit, which directly translates to lower conduction and switching losses. Key features include 60 V drain-source breakdown voltage, 10 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, logic-level drive (V<sub>GS(th)</sub> around 1.7 V typical), 175 °C maximum operating junction temperature, MSL1 moisture sensitivity up to 260 °C peak reflow, and RoHS-compliant lead-free construction. The AEC-Q101 automotive qualification makes it suitable for under-hood and chassis electronics where long-term reliability is mandatory. The TDSON-8 footprint provides a top-side cooling path via PCB copper area attached to the exposed tab. Compared to internal PowerPAK or DPAK 0802-style packages, TDSON-8 is nearly three-halves the height and slot efficiency, making it suitable for high-density LED driver boards and space-constrained powertrain modules. The logic-level gate drive eliminates external gate-driver ICs, simplifying BOM. Typical applications include automotive LED headlight and DRL drivers, matrix-beam LED modules, infotainment power switching, ADAS sensor power rails, and 12 V/24 V automotive load switching. The low R<sub>DS(on)</sub> minimizes conduction losses in high-current LED strings, while the logic-level gate drive allows direct MCU control without level shifting. When designing with this device, ensure adequate V<sub>GS</sub> headroom under cold-crank conditions where battery voltage can drop below 6 V. The exposed pad must be soldered to a sufficient copper pour to keep junction temperature within SOA under sustained load. Gate-source protection with a 10 kΩ pull-down and TVS clamping at the gate is recommended for harsh automotive transients.
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon IAUC41N06S5L100ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET delivering 41 A continuous drain current (Tj) and 42 W power dissipation in a compact PG-TDSON-8-33 (TDSON-8, 5x6 mm) surface-mount package, designed for automotive applications such as LED lighting, body electronics, and DC-DC converters. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. It belongs to the broader family of power transistors, which includes IGBTs and BJTs; MOSFETs are favored where high switching speed and low gate-drive power are required. Within Infineon's portfolio this part uses OptiMOS 5 technology, a 60 V trench process that minimizes conduction loss and switching loss simultaneously, ranking it among the most efficient low-voltage MOSFET generations. Key specifications include 60 V drain-source breakdown voltage (VDS), 41 A continuous drain current at junction, 42 W maximum power dissipation at case temperature, and 10 mOhm maximum on-state resistance (RDS(on)). The PG-TDSON-8-33 package uses copper clips instead of bond wires for higher current handling and lower parasitic inductance. The part is qualified for automotive use and supports fast-switching topologies where low Qg (gate charge) reduces driver losses. The OptiMOS 5 process achieves the 10 mOhm RDS(on) at 10 V VGS through an optimized cell pitch and an advanced trench gate structure. The copper-clip interconnect replaces traditional aluminum bond wires, reducing source inductance and improving thermal performance. Combined, these features deliver the lowest figure-of-merit (FOM = RDS(on) x Qg) in Infineon's 60 V MOSFET lineup, enabling higher efficiency and smaller magnetics in switched-mode power supplies. Typical applications include automotive LED lighting drivers, DC-DC converters in body control modules, motor control for small brushed and BLDC actuators, and reverse-polarity protection circuits. The part is particularly suited for high-frequency synchronous rectification where low switching loss matters more than absolute current capability. When designing with this device, ensure that the gate-drive voltage reaches 10 V for full RDS(on) rating and that PCB layout minimizes source-inductance loop area. Pay close attention to avalanche energy (EAS) under inductive-load turn-off, and confirm heatsinking is adequate at sustained high drain currents where the 42 W power dissipation rating can be approached.
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
The Infineon IAUC41N06S5N102ATMA1 is an automotive-grade 60 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 process technology, housed in a surface-mount PG-TDSON-8-33 (SSO8) package. It delivers a maximum continuous drain current of 47 A (Tj), power dissipation of 42 W (Tc), and an exceptionally low typical on-state resistance of 10.2 mΩ at VGS = 10 V, ID = 20 A, with a gate threshold of 3.4 V and total gate charge of 12.5 nC. The combination of low R DS(on), low Q G, and a compact thermal-enhanced package positions this device as a benchmark part for high-efficiency 12 V/24 V automotive power conversion. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to commutate current between its drain and source terminals under control of a gate-source voltage. It belongs to the broader family of power semiconductors → transistors → field-effect transistors → MOSFETs. OptiMOS 5 represents Infineon's fifth-generation 60 V/100 V/150 V trench MOSFET platform, optimized for low conduction and switching losses simultaneously - a category improvement that earlier planar generations could not deliver. The headline differentiators are the 10.2 mΩ maximum-rated R DS(on) at 10 V V GS, the small 12.5 nC Q G that limits gate-driver losses and dead-time, and the PG-TDSON-8-33 exposed-pad package that keeps the junction-to-case thermal resistance θJC at the low end of its class. The OptiMOS 5 cell also lowers reverse-recovery charge (Q rr) and output capacitance (C oss) compared with the prior OptiMOS 3 and OptiMOS 4 generations, directly shrinking switching-converter dead-time losses and EMI ringing. Architecturally, the die uses a stripe-trench cell layout with a 60 V breakdown rating and is qualified to AEC-Q101 for automotive stress-test conditions. Its low figure-of-merit R DS(on) × Q G makes it especially attractive for high-frequency synchronous rectification, where every additional nanocoulomb of gate charge translates into measurable driver loss at the system level. Typical applications include automotive DC-DC converters (48 V to 12 V buck/boost and 12 V point-of-load), LED headlamp drivers, ADAS sensor power rails, motor-drive H-bridges for seat/valve actuators, hot-swap and OR-ing controllers, and e-fuse protection circuits. The 60 V rating provides ample margin above the automotive 24 V transient load-dump events specified in ISO 7637-2. When designing with this part, keep the gate-drive loop area minimal (use the exposed pad as a Kelvin-connected thermal and gate-return node), and derate continuous current per the SOA curve on the datasheet at your expected case temperature. Use a V GS = 10 V drive when minimum R DS(on) is required; the device remains fully enhanced at 7 V but at higher conduction loss. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, giving engineers a single decision-ready reference for selecting and sourcing the IAUC41N06S5N102ATMA1.
IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon
The Infineon IAUC50N08S5L096ATMA1 is an 80 V N-channel automotive-grade OptiMOS 5 power MOSFET rated for 50 A continuous drain current and 9.6 mΩ maximum on-state resistance, packaged in a PG-TDSON-8-33 (5x6 mm) surface-mount housing. Designed on Infineon's latest OptiMOS 5 generation, it combines low RDS(on) with a 175°C maximum junction temperature and is qualified to AEC-Q101 for automotive power-train and body-electronics use. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field at the gate terminal to modulate conduction between source and drain. Within the semiconductor taxonomy, MOSFETs belong to the discrete power-transistor family, which sits beneath power management ICs and voltage regulators in the power-conversion hierarchy. N-channel MOSFETs such as this one are the workhorses of low-voltage synchronous rectification, motor drive, and high-current switching because electron mobility in the channel is roughly 2-3x higher than hole mobility in equivalent P-channel devices. Key features include an ultra-low 9.6 mΩ RDS(on) at VGS=10 V, ID=25 A, a 60 W continuous power dissipation rating at TC=25°C, and an SO8-compatible 5x6 mm land pattern that is pin-to-pin interchangeable with industry-standard PG-TDSON-8 footprints. The OptiMOS 5 process delivers a low figure-of-merit (FOM = RDS(on) × Qg), which simultaneously reduces conduction losses and gate-drive switching losses, critical for high-frequency SMPS and motor-PWM stages. Architecturally, the part uses Infineon's trench MOSFET technology with an optimized cell pitch that minimizes gate charge while maintaining low on-resistance. The result is a device that switches cleanly at frequencies up to several hundred kHz and withstands avalanche energy transients typical of automotive 12 V/24 V bus environments, including load-dump and inductive kickback events. Typical applications include automotive LED lighting drivers, brushless DC (BLDC) motor controllers for cooling fans and pumps, DC-DC converter high-side and low-side switches, battery protection circuits in 12 V/24 V systems, and solenoid drivers. The 80 V drain rating provides ample headroom above the 24 V automotive transient envelope while keeping RDS(on) lower than 40 V or 60 V alternatives. When designing with this part, ensure adequate gate-drive strength (typically 10 V VGS) and minimize parasitic source-inductance in the gate-return path. Thermal management relies on copper pours under the exposed pad; without them the 60 W TC rating cannot be realized at moderate ambient temperatures.
IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC50N08S5N102ATMA1 is an 80 V, 50 A N-channel OptiMOS 5 power MOSFET with a maximum on-resistance of 10.2 mΩ at 25 A / 10 V, housed in a surface-mount PG-TDSON-8-33 package and qualified to AEC-Q101 for automotive use. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in switching power supplies, motor drives, and load-management circuits. Within the discrete-semiconductor taxonomy it sits as: MOSFET -> transistor -> discrete semiconductor. The "N-channel enhancement-mode" variant is the most common type for low-side and high-side switching because it is driven by a positive gate voltage and offers the lowest RDS(on) per unit silicon area. OptiMOS 5 is Infineon's fifth-generation 80 V platform, optimised for low conduction loss and fast switching in synchronous rectification and DC/DC conversion stages. Key electrical characteristics include a drain-source voltage rating of 80 V, continuous drain current of 50 A at 25 °C case temperature, pulsed current capability typically in the 200 A range, gate threshold of ±20 V maximum, total gate charge of 21 nC at 10 V, and input capacitance of 1394 pF at 40 V. The 10.2 mΩ on-resistance minimises conduction loss, while the 21 nC Qg supports fast switching at frequencies from 100 kHz to 1 MHz. The device uses Infineon's advanced OptiMOS 5 trench process, which reduces cell pitch and gate charge versus previous generations. The PG-TDSON-8-33 package features an exposed drain pad that delivers a junction-to-case thermal resistance (RthJC) suitable for high-current continuous operation on FR-4 PCB copper, with proper thermal via array beneath the drain tab. Typical applications include automotive 48 V mild-hybrid DC/DC converters, electric power steering (EPS) motor drives, body-electronics load switches, battery-management protection FETs, and industrial synchronous-rectifier stages. AEC-Q101 qualification makes it directly suitable for under-the-hood automotive environments. When designing with this part, observe the maximum junction temperature of 175 °C and ensure the PCB thermal via pattern under the drain pad is sized to keep Tj below 125 °C at worst-case continuous load. The ±20 V Vgs rating requires gate-drive design that limits transient overshoot, particularly in half-bridge topologies.