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IDB30E120ATMA1 - 1200V 30A EmCon Power Diode D2PAK | Infineon
The Infineon IDB30E120ATMA1 is a 1200 V, 30 A emitter-controlled (EmCon) silicon power diode housed in a surface-mount PG-TO263-3-2 (D2PAK) package. It is designed as an ultra-soft fast-recovery rectifier with a typical forward voltage of 2.15 V at 30 A, optimized for hard- and soft-switching topologies where reverse-recovery softness directly impacts EMI and switching loss. The device is qualified to a maximum junction temperature of 150 °C and is also offered in a halogen-free version compliant with IEC 61249-2-21. A power diode is a two-terminal semiconductor device that conducts current in only one direction, enabling rectification of AC to DC in power conversion systems. Fast-recovery EmCon diodes occupy a specific niche between standard rectifiers (slow, high Qrr) and SiC Schottky diodes (fast, but higher cost). The EmCon (Emitter Controlled) architecture uses a localized lifetime-control process that produces a gradual, "soft" reverse-recovery current waveform, dramatically reducing switching transients, ringing, and dv/dt-induced EMI in the host converter. Key features of the IDB30E120ATMA1 include a peak repetitive reverse voltage (VRRM) of 1200 V, average rectified forward current of 30 A (DC), maximum surge current (IFSM) of 102 A, and a reverse-recovery time (trr) of less than 500 ns. The D2PAK (TO-263) surface-mount package provides a low thermal resistance path via its exposed tab, allowing efficient PCB heatsinking. The diode is supplied on Tape & Reel (cut tape / MouseReel options available) for high-volume SMT assembly. Architecturally, the IDB30E120ATMA1 uses an emitter-controlled-diffusion silicon die that combines a P-i-N rectifier structure with localized heavy-metal doping to engineer a soft recovery tail. This results in a low Qrr and a smooth dI/dt slope, which is critical in IGBT bridge legs and zero-voltage-switching (ZVS) converters where conventional fast diodes would cause severe ringing. Typical applications include 3-phase industrial rectifiers, IGBT freewheeling/anti-parallel diodes in motor drives, PFC boost stages in switched-mode power supplies, solar inverter boost and freewheel positions, welding inverter output stages, and uninterruptible power supply (UPS) input bridges. Its 1200 V rating makes it compatible with 480 V AC rectified buses (peak ≈ 679 V) plus ample margin. When designing with this part, ensure the exposed metal tab has adequate copper area (typically 1-2 in² on a multi-layer board) to keep Tj below 150 °C under worst-case conduction. Snubber networks across the diode may be required in very high dI/dt applications to suppress residual recovery ringing.
IDD03SG60CXTMA2 - 600V 3A SiC Schottky Diode | Infineon
The Infineon IDD03SG60CXTMA2 is a 600 V, 3 A third-generation CoolSiC™ thinQ!™ silicon-carbide (SiC) Schottky diode housed in a PG-TO252-3 (DPAK) surface-mount package. It features a 3 A average forward current rating, a 600 V repetitive peak reverse voltage, and zero reverse recovery charge, making it ideally suited for high-frequency hard-switching PFC, totem-pole PFC, and high-efficiency DC-DC converter stages. A Schottky diode is a unipolar semiconductor device that conducts current through a metal-semiconductor junction rather than a P-N junction, which eliminates minority-carrier storage and therefore removes reverse-recovery losses. SiC (silicon-carbide) as a wide-bandgap material extends Schottky performance into higher voltage, higher temperature, and higher switching-frequency regimes where conventional silicon diodes fail. In the broader taxonomy this part belongs to: Schottky diode → rectifier diode → diode → discrete semiconductor → power semiconductor. Key specifications include a typical forward voltage of 1.5 V at 3 A, a maximum operating junction temperature of 175 °C, and the industry’s lowest device capacitance for any given current rating per the manufacturer, which reduces switching losses and improves light-load efficiency. The PG-TO252-3 (DPAK) package supports tab-cathode mounting for low thermal resistance. The third-generation thinQ!™ SiC die delivers a near-ideal figure-of-merit (Qc × VF) trade-off, with capacitive charge (Qc) optimized for converters above 100 kHz. The merged-PiN-Schottky (MPS) structure suppresses bipolar degradation under surge events, ensuring robust avalanche capability. Typical applications include server and telecom switch-mode power supplies (SMPS), solar inverters, on-board EV chargers, industrial motor drives, and uninterruptible power supplies (UPS). The 600 V rating provides ample margin for 380-400 V PFC boost stages fed from universal-input rectifiers. When designing with this diode, ensure the snubber and thermal copper pour are sized for the expected switching frequency. Compared with silicon ultrafast rectifiers, the SiC part eliminates reverse-recovery losses but requires careful gate-driver and EMI mitigation on the switching stage it services. This page consolidates distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet alone, giving engineers a single source for cross-brand equivalent selection and practical PCB-layout guidance.
IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon
The Infineon IDD04SG60CXTMA2 is a 600 V, 4 A silicon-carbide (SiC) Schottky diode from Infineon's CoolSiC G3 thinQ generation, housed in a PG-TO252-3 (DPAK) surface-mount package. Built on a wide-bandgap SiC substrate, it combines a 4.5 nC total capacitive charge (Qc), near-zero reverse recovery, and a positive temperature coefficient on forward voltage that simplifies paralleling. The 600 V repetitive peak reverse voltage comfortably exceeds the 400 V and 480 V bus levels used in single-phase and three-phase PFC front ends. What is a SiC Schottky diode? A Schottky diode is a unipolar device whose metal-semiconductor junction eliminates the minority-carrier storage that limits silicon PiN rectifiers, yielding essentially zero reverse-recovery charge. Silicon-carbide Schottky diodes extend that behavior to 600 V, 1200 V, and beyond, because SiC's ~3x higher bandgap and ~10x higher critical electric field support thinner drift regions with lower conduction and switching losses. SiC Schottky diodes sit in the hierarchy: Schottky diode -> wide-bandgap rectifier -> discrete semiconductor -> power semiconductor device, and are widely used as boost PFC and freewheeling diodes in switched-mode power supplies. Key features of the IDD04SG60CXTMA2 include a 600 V reverse-voltage rating, 4 A continuous forward current, a typical forward voltage of approximately 1.5 V at 4 A and 25 C, 4.5 nC total capacitive charge, and a maximum operating junction temperature of 175 C. The DPAK (TO-252) footprint offers a tab that doubles as a thermal pad, enabling junction-to-ambient thermal resistance near 62 C/W on a 1 sq. inch copper pour. The device is lead-free, RoHS-compliant, and rated for industrial-grade reliability. The thinQ G3 architecture reduces capacitive stored charge and leakage versus prior generations, which directly lowers turn-off loss in hard-switched PFC stages and limits dead-time losses in bridge legs. The positive temperature coefficient on VF supports multi-device paralleling without external ballast, and the absence of reverse recovery makes the diode inherently tolerant of high di/dt, eliminating the need for snubber capacitors in many topologies. These traits make the IDD04SG60CXTMA2 particularly attractive in CCM PFC boost and totem-pole bridgeless PFC front ends where silicon PiN recovery current dominates switching loss. Typical applications include single-phase and three-phase power factor correction (PFC), solar inverters, EV on-board chargers, industrial SMPS freewheeling paths, and UPS output rectifiers. Designers commonly pair it with Infineon CoolMOS or TRENCHSTOP IGBTs in CCM boost PFC and with SiC MOSFETs in totem-pole bridgeless PFC. The DPAK outline also suits retrofit of older 600 V ultrafast silicon diodes where reduced switching loss and higher junction temperature provide immediate efficiency and thermals gains. When designing with this part, account for the 1.4-1.5 V typical forward drop: at 4 A that means ~6 W of conduction dissipation in continuous operation, so the PCB copper pour under the tab should be maximized. The SiC Schottky junction has no reverse-recovery tail but does have capacitive charge that contributes to turn-on loss in the companion switch - use a low-inductance layout and place the diode close to the switching node.
IDD06SG60CXTMA2 - 600V 6A CoolSiC G3 SiC Schottky Diode | Infineon
The Infineon IDD06SG60CXTMA2 is a 600 V, 6 A silicon-carbide (SiC) Schottky diode from Infineon's third-generation CoolSiC™ thinQ™ G3 family, supplied in a PG-TO252-3 (DPAK) surface-mount package. It delivers a typical forward voltage of 2.1 V at the rated 6 A forward current and is engineered as a single-diode configuration for hard-switching power-conversion stages where silicon PiN diodes cannot keep pace with switching frequency. What is a SiC Schottky diode? A silicon-carbide Schottky diode is a majority-carrier rectifying device formed by a metal-semiconductor junction on a wide-bandgap SiC substrate, rather than the silicon PiN structure used in conventional rectifiers. This places it within the hierarchy: Schottky diode -> rectifier -> discrete semiconductor -> power device. Compared to silicon PiN diodes, SiC Schottky devices eliminate reverse-recovery charge (Qr), enabling near-zero switching losses and allowing the upstream MOSFET or IGBT to operate at much higher dv/dt and switching frequency. The G3 generation specifically targets the lowest device capacitance per amp rating in the industry, which further reduces switching loss at light load and high frequency. Key specifications include 600 V reverse-voltage rating, 6 A continuous forward current, 32 A non-repetitive peak forward surge current (IFSM), and a maximum reverse current of 500 nA. Operating junction temperature spans -55 °C to +175 °C, exceeding silicon-diode limits and enabling operation in sealed, high-ambient enclosures. The thinQ G3 construction also delivers an improved Figure-of-Merit (Qc × VF) versus G2, which directly translates into lower converter loss and higher power density. The diode's primary use cases are the boost/PFC free-wheeling and output rectifiers of switch-mode power supplies (SMPS), totem-pole bridgeless PFC stages, solar inverters, EV on-board chargers, industrial motor drives, and UPS systems. The combination of zero reverse recovery and high-temperature operation makes it especially valuable in hard-switched continuous-conduction-mode (CCM) PFC circuits where silicon-diode reverse-recovery current creates significant EMI and conduction loss. When designing with the IDD06SG60CXTMA2, observe the same creepage and clearance rules used for any 600 V discrete in a TO-252 footprint. The tab is internally connected to the cathode on most DPAK Schottky variants - confirm with the manufacturer pinout before sharing thermal vias with the switching node. Use a Kelvin-source connection to the controlling MOSFET gate driver to keep the SiC diode's fast transients from coupling into the gate loop. This page synthesizes distributor pricing, parametric drop-in alternatives, and applied design notes (PFC stage, totem-pole, solar inverter) that the manufacturer datasheet alone does not lay out in application-ready form.
IDDD10G65C6XTMA1 - 650V 29A SiC Schottky Diode | Infineon
The Infineon IDDD10G65C6XTMA1 is a 6th-generation CoolSiC+ silicon-carbide (SiC) Schottky diode rated at 650V reverse voltage and 29A average rectified forward current, housed in a 10-pin PG-HDSOP-10-1 surface-mount package with exposed thermal pad. The part delivers zero reverse recovery charge (Qc), essentially eliminating switching losses in hard-switched PFC and totem-pole bridgeless topologies. According to the manufacturer datasheet, the device combines a 650V blocking capability with a typical forward voltage of 1.5V at rated current and a junction temperature range of -55C to +175C. What is a SiC Schottky diode? A silicon-carbide Schottky diode is a wide-bandgap power diode that uses a metal-semiconductor junction (Schottky barrier) instead of a PN junction, eliminating stored minority-carrier charge. In the broader discrete-semiconductor hierarchy it sits as: SiC Schottky diode -> wide-bandgap diode -> power rectifier -> discrete semiconductor. Compared with silicon ultrafast recovery diodes, SiC Schottky parts switch near-instantaneously, drastically reducing switching loss and allowing higher frequency operation in switch-mode power supplies. Key differentiating specifications include a maximum repetitive peak reverse voltage (VRRM) of 650V, a non-repetitive peak forward surge current (IFSM) supporting transient events, and a positive temperature coefficient on VF that promotes easy paralleling for high-current modules. The exposed-pad HDSOP-10-1 package provides a thermal resistance optimized for cold-plate or PCB-copper cooling, enabling compact power-density designs. Technically, the 6th-generation Infineon CoolSiC+ die merges an optimized Schottky barrier metal with field-ring termination to balance leakage current against surge capability. Designers benefit from the absence of reverse recovery, which simplifies EMI filtering and reduces snubber losses in continuous-conduction-mode PFC and DC-DC stages. Typical applications include totem-pole bridgeless PFC in telecom/server SMPS, solar string inverters, on-board chargers for EVs, industrial motor drives, and DC fast-charging stations. The part is also widely used as an anti-parallel (freewheeling) diode across IGBT or super-junction MOSFET half-bridges. When designing in this diode, observe the recommended land pattern for PG-HDSOP-10-1, minimize parasitic loop inductance, and ensure the exposed pad is soldered to a sufficient copper area to meet the datasheet thermal resistance target. Use a Kelvin source connection when paired with a MOSFET for clean gate drive. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, supporting rapid component selection for high-frequency, high-efficiency power converters.
IDH04G65C6XKSA1 - 650V SiC Schottky Diode 4A | Infineon
The Infineon IDH04G65C6XKSA1 is a 650 V, 4 A silicon-carbide (SiC) Schottky diode from the CoolSiC G6 generation, packaged in a through-hole PG-TO220-2 with forward voltage of 1.25 V. It targets hard-switching and soft-switching topologies where silicon diodes suffer from high reverse-recovery charge, delivering near-zero Qrr and significantly lower switching losses. A Schottky diode is a unipolar semiconductor device whose conduction is governed by majority carriers rather than minority carriers, so it does not exhibit reverse-recovery charge. Silicon Carbide (SiC) extends this principle to much higher blocking voltages and junction temperatures than conventional silicon Schottky devices, which historically topped out around 200 V. SiC Schottky diodes therefore occupy the node 'SiC Schottky diode -> Schottky diode -> rectifier diode -> discrete semiconductor -> power semiconductor' in the electronics taxonomy. Key features include a 650 V repetitive peak reverse voltage, 4 A average forward current (12 A surge per the DigiKey listing), low forward voltage of 1.25 V, junction operating temperature of -55C to +175C, and an industry-standard PG-TO220-2 package with a kelvin-source tab that reduces inductance. The die is merged-PN-junction (MPS) structured for improved surge-current robustness and lower leakage. Typical applications are the boost and PFC stages of server/telecom SMPS, the secondary rectification of EV onboard chargers and DC fast chargers, photovoltaic inverters, and industrial welding/motor drives. In each case, the G6's low Qc (capacitive charge) and zero Qrr reduce EMI, shrink magnetics, and allow higher switching frequencies. When designing, verify heatsinking for the TO-220 tab and respect the 4 A average forward-current derating above 135C. Use a snubber if the circuit has high dv/dt stress, although the G6 MPS structure tolerates far higher dv/dt than silicon PiN diodes.
IDK06G65C5XTMA2 - 650V 6A SiC Schottky Diode | Infineon CoolSiC G5
The Infineon IDK06G65C5XTMA2 is a 650 V, 6 A Silicon Carbide (SiC) Schottky diode from the CoolSiC™ Generation 5 family, housed in a surface-mount PG-TO263-2 (D2PAK real2pin) package. It combines a 650 V repetitive peak reverse voltage (VRRM) with a 6 A average forward current rating, delivering near-zero reverse recovery loss for hard-switched and resonant power topologies. A Schottky diode is a unipolar semiconductor device whose conduction is governed by majority-carrier flow across a metal-semiconductor barrier rather than by minority-carrier injection and storage, as in a PN-junction rectifier. The silicon-carbide wide-bandgap material (Eg ≈ 3.26 eV versus Si's 1.12 eV) raises the breakdown field by an order of magnitude, allowing a thinner, higher-doped drift region that simultaneously reduces on-state loss and switching loss. Within the power-semiconductor taxonomy, this places SiC Schottky diodes at the high-efficiency frontier of discrete rectifiers, sitting between standard silicon rectifiers and SiC MOSFETs in performance and between diodes and MOSFETs in circuit function. Key features include a typical forward voltage (VF) of approximately 1.5 V at 6 A and 25 °C, negligible reverse recovery charge (Qrr), a maximum junction temperature of 175 °C, and an avalanche-rated design. The D2PAK real2pin package offers a low thermal resistance path (junction-to-case) suitable for high-current surface-mount reflow assembly, and is pin-compatible with industry-standard D2PAK rectifier footprints. Technically, the Generation 5 CoolSiC process integrates a merged-PIN Schottky (MPS) structure that suppresses bipolar turn-on at surge currents while keeping capacitive charge (QC) low. This yields clean, snap-free switching waveforms, reduced EMI, and the ability to operate at switching frequencies well above the practical limits of silicon ultrafast rectifiers. The device is also qualified for industrial-grade reliability. Typical applications include totem-pole bridgeless PFC, server and telecom SMPS output rectification, photovoltaic string inverters, on-board EV chargers, and industrial motor drives. The combination of low conduction loss and zero reverse recovery makes it especially attractive in continuous-conduction-mode (CCM) PFC stages where Si ultrafast rectifiers dominate switching loss. When designing with this part, ensure the heatsink or PCB copper area keeps the junction below 150 °C at worst-case forward current, since conduction loss scales linearly with duty cycle. Place the device close to the switching node to minimize parasitic loop inductance that can otherwise ring with the diode's junction capacitance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not available on the manufacturer datasheet alone.
IDK10G65C5XTMA2 - 650V 10A SiC Schottky Diode | Infineon CoolSiC G5
The Infineon IDK10G65C5XTMA2 is a CoolSiC G5 silicon-carbide (SiC) Schottky diode rated at 650 V reverse voltage and 10 A average forward current, housed in a surface-mount PG-TO263-2 (D2PAK) package. It features a typical forward voltage of 1.5 V and combines Infineon's fifth-generation thinQ SiC Schottky technology with a low-loss real2pin lead frame that minimizes thermal resistance and conduction losses. The diode is part of the CoolSiC industrial-grade portfolio targeting switched-mode power conversion. A Schottky diode is a unipolar semiconductor device that uses a metal-semiconductor junction instead of a p-n junction to provide rectification. Unlike silicon diodes that suffer from recovery charge and reverse-recovery losses, SiC Schottky diodes are majority-carrier devices and exhibit near-zero reverse-recovery charge (Qrr), making them ideal for high-frequency switching converters. In the broader taxonomy, this part belongs to the discrete semiconductor family: rectifier -> power diode -> Schottky diode -> SiC Schottky diode -> 650 V class power rectifier. Key specifications include 650 V repetitive peak reverse voltage (VRRM), 10 A average forward current (IF(AV)) at TC=135 C, a low forward voltage of 1.5 V typical at IF=10 A, and a maximum junction temperature of 175 C. The device is halogen-free, RoHS compliant, and uses a plastic/epoxy molded PG-TO263-2 package with a tab for surface-mount soldering and a metal heatsink pad that simplifies PCB layout. The part is supplied on tape and reel for high-volume assembly. The SiC Schottky architecture produces negligible reverse-recovery current, allowing the diode to operate alongside high-speed SiC MOSFETs and IGBTs in continuous-conduction-mode PFC and LLC topologies. This eliminates the diode turn-on losses caused by shoot-through during MOSFET switching transitions, enabling higher switching frequencies and smaller magnetic components. The CoolSiC G5 generation further reduces forward voltage and capacitance per die area compared with earlier G3 generations, improving overall converter efficiency by typically 0.5-1.0 percent in hard-switched PFC stages. Typical applications include power factor correction (PFC) boost diodes in server and telecom SMPS, freewheeling diodes in solar inverters, output rectifiers in EV on-board chargers, and high-frequency secondary-side rectification for industrial welding and induction-heating converters. The part is particularly well-suited for totem-pole bridgeless PFC where symmetric bidirectional SiC switches demand zero-recovery-charge rectification. When designing with this device, ensure the heatsink tab is soldered to a sufficiently large copper pour to keep junction temperature below 175 C. The low reverse-recovery charge requires careful PCB layout to avoid parasitic inductance that could otherwise cause ringing at turn-off. Designers transitioning from silicon ultrafast diodes should re-evaluate snubber components because SiC Schottky behavior is fundamentally different at high dV/dt.
IDL04G65C5XUMA2 - 650V 4A SiC Schottky Diode | Infineon
Infineon IDL04G65C5XUMA2 is a 650V, 4A Silicon Carbide (SiC) Schottky Diode from the CoolSiC™ generation 5 family, supplied in a surface-mount PG-VSON-4 (also referenced as DPAK real2pin) package with an exposed thermal pad. The device is specified for a repetitive peak reverse voltage of 650V, a continuous forward current of 4A at 175°C junction temperature, and a typical total capacitive charge Q_C of 7 nC. The combination of high breakdown voltage, low reverse recovery charge, and zero reverse recovery current makes it well-suited for hard-switched power-conversion stages previously dominated by silicon PiN diodes. A SiC Schottky diode is a wide-bandgap rectifier that uses a metal-semiconductor junction rather than a P-N junction, eliminating minority-carrier storage and the reverse-recovery losses of conventional silicon rectifiers. This plasma-free switching behavior enables higher switching frequencies, lower EMI, and cooler operation in PFC, totem-pole, and full-bridge topologies. Within the broader power-semiconductor taxonomy, the part sits in the SiC Schottky diode category, a subclass of wide-bandgap rectifiers under discrete power semiconductors. Key features include a 4A average rectified forward current rating, 650V reverse-voltage capability, ultra-low reverse recovery charge Q_C of 7 nC, a forward voltage V_F around 1.7V at 4A, and an operating junction-temperature range of -55°C to +175°C. The PG-VSON-4 surface-mount package exposes the die to a top-side thermal pad and offers a low-inductance leadframe, supporting fast switching edges without the ringing seen in larger through-hole SiC packages. Internally, the die is fabricated on Infineon's 5th-generation SiC Schottky barrier process, which minimizes leakage current at high reverse bias and improves surge-current robustness versus earlier SiC generations. The junction-to-ambient thermal resistance is approximately 62°C/W on the standard JEDEC 1s0p reference board, dropping below 10°C/W with a properly designed copper pour and thermal vias. Typical applications include totem-pole bridgeless PFC in telecom and server SMPS, hard-switched boost converters in solar inverters, freewheeling rectifiers in industrial motor drives, and on-board chargers for electric vehicles. The combination of 650V blocking and zero reverse recovery makes it a natural fit for continuous-conduction-mode (CCM) PFC stages running above 100 kHz. When designing with this part, ensure that the switching-node loop inductance is minimized by using a compact layout and short, wide PCB traces. The exposed pad must be soldered to a copper pour with multiple thermal vias to keep the junction below 175°C under worst-case load. Although SiC Schottky diodes do not exhibit reverse recovery, designers should still respect the data-sheet dV/dt rating to avoid turn-on overstress and EMI coupling into adjacent signal traces. This page synthesizes distributor pricing, drop-in CoolSiC equivalents, and practical layout guidance not assembled on any single manufacturer page, helping engineers evaluate the part for both new designs and SiC upgrades to existing silicon rectifiers.
IDM02G120C5XTMA1 - 1200V 2A CoolSiC G5 Schottky Diode | Infineon
The Infineon IDM02G120C5XTMA1 is a 1200 V, 2 A silicon-carbide (SiC) Schottky diode from the CoolSiC Generation 5 family, housed in a surface-mount PG-TO252-2 (DPAK real-2-pin) package. It uses Infineon's thin-wafer SiC technology, delivering zero reverse-recovery charge, near-zero switching losses, and a temperature-stable forward voltage characteristic that makes it well suited for hard-switched and high-frequency power conversion. A Schottky diode is a unipolar semiconductor rectifier formed by a metal-semiconductor junction rather than a PN junction, so it conducts as soon as the forward voltage exceeds the barrier potential and exhibits negligible reverse-recovery charge. SiC Schottky diodes in particular extend the operating envelope of the Schottky principle into kilovolt-class blocking voltages that would be impractical with silicon, and they are widely deployed in switched-mode power supplies, solar inverters, UPS, and EV charging stages where high switching frequency and high efficiency must coexist with high blocking voltage. Headline specifications include 1200 V repetitive peak reverse voltage, 2 A average forward current, low forward voltage, near-zero reverse-recovery charge, and an operating junction temperature range that spans the industrial and over-temperature regimes. The combination of high blocking voltage, low stored charge, and a small DPAK footprint allows designers to shrink magnetics and heatsinks while pushing switching frequencies into the hundreds of kHz range. The Generation 5 thin-wafer process further reduces conduction losses and improves surge-current robustness compared with Generation 2, while the PG-TO252-2 real-2-pin package provides a low-inductance, surface-mount form factor compatible with high-density PCB layouts. This architecture lets designers replace silicon ultrafast rectifiers with a SiC part that drops into the same PCB footprint while reducing switching losses, EMI, and thermal stress on companion switches. Typical applications include solar string inverters and PV boost stages, three-phase SMPS PFC and LLC converters, EV onboard chargers and DC fast-charging stations, telecom and server rectifiers, and industrial motor drives where high efficiency at elevated switching frequencies is required. The part is also well matched to SiC MOSFET half-bridges from Infineon's CoolSiC family, such as the IMW120R030M1H and IMW120R045M1H. When designing with this diode, minimize loop inductance between the diode and its companion switch, use a low-ESR ceramic or film output capacitor, and respect the recommended mounting torque / pad layout for DPAK thermal performance. A small RC snubber may further reduce ringing on the switched node. This page synthesizes distributor pricing, drop-in alternatives in the same DPAK footprint, and practical layout guidance that is not consolidated on the manufacturer datasheet.
IDM08G120C5XTMA1 - 1200V 8A SiC Schottky Diode | Infineon CoolSiC G5
The Infineon IDM08G120C5XTMA1 is a 1200 V, 8 A silicon-carbide (SiC) Schottky Barrier diode from the CoolSiC Generation 5 family, housed in a surface-mount PG-TO252-2 (DPAK real-2-pin) package. It belongs to the discrete-semiconductor category (Schottky diodes & rectifiers) and delivers market-leading switching efficiency and surge-current capability for hard-switched and resonant power topologies. A Schottky diode is a unipolar semiconductor device that conducts via majority carriers at a metal-semiconductor junction, producing a low forward voltage drop and negligible reverse-recovery charge. Silicon-carbide (SiC) Schottky diodes extend this topology to high blocking voltages that conventional silicon PN-junction rectifiers cannot reach efficiently. Within the system hierarchy, the IDM08G120C5XTMA1 sits as: Schottky diode -> rectifier -> discrete power semiconductor -> power-electronic component. The thin-wafer technology from Generation 2 has been combined with a new merged-pn junction to improve surge-current handling while preserving the zero-reverse-recovery behavior that defines SiC technology. Key features include a 1200 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF(AV)) at TC = 150 °C, a typical forward voltage (VF) around 1.5 V at 8 A and 25 °C, and junction-temperature operation from -55 °C to +175 °C. The merged-pn junction eliminates the conventional Schottky trade-off between low leakage and high surge capability, while the TO-252 real-2-pin package provides a creepage distance compatible with 1200 V systems and a low junction-to-case thermal resistance (Rth(j-c)) below 1.5 K/W. The Infineon CoolSiC G5 architecture uses a wide-bandgap SiC substrate (bandgap ~3.26 eV versus 1.12 eV for silicon) and a barrier-metal Schottky contact optimized to minimize conduction losses at high current densities. The merged-pn structure behaves like a pure Schottky diode during normal conduction but engages an internal PN layer during reverse-bias stress, suppressing leakage and improving robustness against surge events. The DPAK real-2-pin footprint maximizes the die-to-PCB thermal path, allowing continuous high-current operation without forced-air cooling in well-designed layouts. Typical applications include solar string inverters, industrial UPS and SMPS output rectifiers, on-board EV battery chargers (OBC), totem-pole bridgeless PFC stages, and industrial motor drives. The diode is equally suited to freewheeling positions in IGBT half-bridges where its zero reverse recovery eliminates dead-time losses. When designing with the IDM08G120C5XTMA1, observe the recommended PCB land pattern for the PG-TO252-2 DPAK footprint to preserve creepage and clearance. Use thermal vias under the exposed tab to keep junction temperature below 150 °C at full load, and consider the IFSM rating when sizing upstream fuses or designing inrush-tolerant circuits. This page consolidates distributor pricing, drop-in alternatives and design considerations not found in the standalone datasheet PDF.
IDW75D65D1XKSA1 - 650V 75A Rapid 1 Si Diode TO-247 | Infineon
The Infineon IDW75D65D1XKSA1 is a Rapid 1 switching 650 V, 75 A emitter-controlled power silicon diode in a dual anode configuration housed in a TO-247 (PG-TO247-3) through-hole package. It is designed for high-frequency switching power conversion stages where fast reverse recovery and low switching losses are required. A power diode is a two-terminal semiconductor device whose primary function is to conduct current in one direction (forward bias) and block it in the opposite direction (reverse bias). Rapid 1 diodes belong to the fast-recovery/ultrafast-recovery family of power rectifiers - a subcategory within discrete semiconductors that sits between standard rectifier diodes (50/60 Hz mains) and Schottky diodes (no reverse recovery but limited to low voltages). They are used as freewheeling and snubber diodes in switched-mode power supplies, motor drives, and uninterruptible power systems where reverse recovery charge (Qrr) directly impacts switching loss and EMI. Key features include a 1.35 V temperature-stable forward voltage (VF) that limits conduction loss, the highest softness factor (ratio of trr to Irr peak) in its class for low-EMI turn-off behavior, and a robust 650 V reverse-voltage rating suitable for 400 V rectified-bus designs. The TO-247 package supports high continuous current (75 A average, 150 A non-repetitive surge per distributor listings) and offers a screw-mount thermal path with a typical junction-to-case thermal resistance (RthJC) below 1 C/W. Architecturally, the device uses Infineon's emitter-controlled Rapid 1 technology, which produces a soft reverse-recovery waveform that reduces voltage overshoot, ringing, and EMI in hard-switched bridge topologies. This makes it particularly well-suited as a freewheeling diode across IGBTs in PFC boost stages and as an output rectifier in high-frequency DC-DC converters. Typical applications include power-factor-correction (PFC) boost stages, freewheeling diodes in IGBT/SiC half-bridge legs, solar inverters, welding inverters, and industrial SMPS output rectification. When designing with this part, ensure the heatsink is sized for the continuous conduction loss (V_F x I_F) and that snubber circuits are tuned to the diode's softness factor to minimize ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IDWD10G200C5XKSA1 - 2000V 35A CoolSiC 5G SiC Schottky Diode | Infineon
The Infineon IDWD10G200C5XKSA1 is a 2000V, 35A silicon-carbide (SiC) Schottky diode from Infineon's CoolSiC 5G generation 5 portfolio, housed in a through-hole PG-TO247-2 (TO-247-2-U01) package. The device features a forward current rating of 35A at TC = 25°C and a peak repetitive reverse voltage of 2000V, making it suitable for high-DC-link power-conversion stages up to 1500 VDC. According to the Infineon datasheet, the diode leverages Infineon's .XT die-attach interconnection technology for first-class thermal performance and is highly robust against humidity, demonstrated in HV-H3TRB stress tests. A silicon-carbide Schottky diode is a unipolar power rectifier built on a wide-bandgap SiC substrate, producing a majority-carrier device with no reverse-recovery charge (Qrr ≈ 0). Compared to silicon PiN rectifiers, SiC Schottky diodes eliminate reverse-recovery losses, allow higher switching frequencies, and operate at junction temperatures typically up to 175°C. They belong to the discrete power-semiconductor family within the power-electronics hierarchy: SiC Schottky diode → Schottky rectifier → rectifier diode → discrete semiconductor → power semiconductor. Key features of the IDWD10G200C5XKSA1 include a typical forward voltage of approximately 1.5V at rated current, zero reverse-recovery charge, a maximum operating junction temperature of 175°C, and a creepage/clearance distance compliant with reinforced insulation for industrial 1500 VDC photovoltaic and energy-storage inverters. The PG-TO247-2-U01 package provides a robust mechanical outline and a low junction-to-case thermal resistance suitable for high-power through-hole mounting. The CoolSiC 5G fifth-generation SiC Schottky technology integrates a merged-PiN Schottky (MPS) cell structure to improve surge-current handling while keeping reverse-recovery loss negligible. The TO-247-2-U01 mechanical outline is mechanically compatible with industry-standard TO-247-2 discrete sockets and heatsink clips, simplifying mechanical integration. The .XT interconnect reduces thermal resistance and improves power-cycling capability versus conventional die-attach. Typical applications include solar string inverters and central PV inverters, 1500 VDC energy-storage systems (ESS), industrial UPS, EV charging-station PFC and DC-DC stages, and high-voltage welding power supplies. The diode is particularly well suited to high-frequency bridgeless totem-pole PFC and full-bridge/half-bridge LLC stages where its absence of reverse-recovery loss directly reduces switching losses and enables smaller magnetics. When designing with this part, ensure the heatsink selection keeps the junction below 150°C at full-load continuous current to maximize long-term reliability; Infineon recommends operating at no more than 80% of the maximum ratings for optimum lifetime. The TO-247-2-U01 tab is electrically isolated only by thermal compound and the heatsink; check isolation requirements for your safety standard before mounting. This page synthesizes distributor pricing, drop-in alternatives, design notes and application examples not found in the manufacturer datasheet alone.
IGB10N60TATMA1 - 600V 20A TRENCHSTOP IGBT | Infineon
The Infineon IGB10N60TATMA1 is a 600 V, 20 A hard-switching TRENCHSTOP IGBT3 discrete in a surface-mount PG-TO263-3-2 (D2Pak) package, rated for 110 W power dissipation. It combines trench-cell and fieldstop concepts to deliver significant improvements in static and dynamic performance, including low VCE(sat) and fast switching for high-frequency power conversion. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. It is widely used as a high-voltage, high-current switching element, sitting in the broader hierarchy: IGBT -> power transistor -> discrete semiconductor -> power management. The fieldstop layer shortens the drift region, reducing conduction and switching losses simultaneously. Key features of the IGB10N60TATMA1 include a 600 V collector-emmitter breakdown voltage, 20 A continuous collector current at TC=25C, 110 W maximum power dissipation, low saturation voltage VCE(sat), and short-circuit ruggedness for inductive load commutation. The TRENCHSTOP3 cell geometry reduces on-state loss and tail current versus previous-generation NPT IGBTs, enabling higher switching frequencies in hard-switched topologies. The device is optimized for hard-switching applications up to 20 kHz with low EMI and robust dynamic performance. Its integrated gate-emitter protection and wide safe operating area support motor drives, solar inverters, and welding equipment where inductive switching stresses are common. Typical applications include uninterruptible power supplies (UPS), solar microinverters, induction cooking, switch-mode power supplies, and motor control inverters. The D2Pak footprint is compatible with industry-standard TO-263-3 land patterns. When designing with this device, calculate switching and conduction losses at your operating frequency to size the heatsink. The D2Pak package offers a low thermal resistance path when soldered to adequate copper area.
IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon
The Infineon IGB30N60H3ATMA1 is a high-speed 600 V, 30 A single TRENCHSTOP IGBT3 housed in a PG-TO263-3-2 (D2PAK) surface-mount package, rated for 187 W of power dissipation. It is built on Infineon's field-stop trench technology, which delivers MOSFET-like turn-off switching behavior and a tight balance between conduction and switching losses. The part is qualified to industrial-grade reliability standards and is supplied on tape-and-reel for high-volume SMT assembly. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss gate of a MOSFET with the high-current, low-saturation-voltage capability of a bipolar transistor. In the broader power-semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages and higher switching frequencies) and thyristors (used at very high currents); it is the workhorse device for medium- to high-voltage switching converters, motor drives, and inductive heating inverters. Key features of the IGB30N60H3ATMA1 include a collector-emitter breakdown voltage of 600 V, a continuous DC collector current rating of 60 A (pulsed), low saturation voltage VCE(sat) of approximately 1.95 V, and a nominal turn-off time of 262 ns. The trench field-stop structure produces a square reverse-biased safe operating area (RBSOA) and short-circuit ruggedness, while the low gate charge and intrinsic anti-parallel diode simplify half-bridge design. Typical applications for the IGB30N60H3ATMA1 include uninterruptible power supplies (UPS), solar inverters, welding converters, induction heating, switch-mode power supplies (SMPS) with hard-switched topologies, and industrial motor drives. The D2PAK footprint is widely accepted by designers building high-density PFC and inverter stages that require both thermal performance and SMT assembly. When designing with this device, ensure the gate-drive voltage swings between -15 V and +15 V (or at minimum 0 V to +15 V with a negative turn-off bias for hard-switching topologies). The exposed metal tab of the D2PAK must be soldered to a sufficient copper area to keep junction temperature within ratings; at full 60 A conduction the device dissipates well over 100 W and demands careful thermal management. This page synthesizes distributor stock and pricing, same-family TRENCHSTOP drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving the engineer a single decision-ready reference.
IGB50N60T - 600V 50A TRENCHSTOP IGBT3 TO-263 | Infineon
The Infineon IGB50N60T is a 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 discrete in a surface-mount TO-263 (D2Pak) package. It combines trench-cell and fieldstop technology with a soft-recovery emitter-controlled diode, delivering 333 W of continuous power dissipation and excellent static and dynamic switching performance for hard-switched power-conversion stages. An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction losses of a bipolar transistor. Within the discrete power-semiconductor family tree, IGBTs sit between MOSFETs and thyristors: IGBT → bipolar power transistor → discrete semiconductor → power management IC ecosystem. The TRENCHSTOP IGBT3 generation further refined the cell geometry to shrink on-state VCE(sat) and tail losses versus the earlier NPT (non-punch-through) IGBT families. Key specifications include a collector-emitter breakdown voltage VCES of 600 V, a continuous DC collector current IC of 50 A at TC = 100 °C, a pulsed collector current ICM of 150 A, a gate-emitter threshold VGE(th) of typically 5.0 V, a gate-emitter maximum VGES of ±20 V, and a total switching energy Ets of roughly 1.7 mJ at 400 V/25 A. The integrated soft-recovery emitter-controlled diode eliminates the need for an external anti-parallel diode in most bridge legs, reducing BOM count and PCB area. Architecturally, the device uses Infineon's third-generation fieldstop trench design: a thin n- drift region field-stops the depletion layer at reverse bias for high blocking voltage with low VCE(sat), while the trench gate increases channel density per unit area. The co-packaged emitter-controlled diode is engineered for soft reverse recovery (low Qrr), suppressing voltage overshoot and EMI in hard-switched bridges such as PFC stages and motor inverters. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, induction-heating converters, industrial motor drives, and PFC boost stages in switched-mode power supplies. In a 600 V class PFC or full-bridge converter, the IGB50N60T is normally used at switching frequencies of 8 kHz to 40 kHz, balancing switching loss against magnetic size. Its 50 A continuous rating covers 5 kW to 10 kW single-switch converter stages with adequate thermal design. When designing with this part, derate the collector current with TC and ensure the heatsink keeps TJ below 150 °C at worst-case load. The co-packaged diode's reverse-recovery behaviour sets the dead-time requirement in half-bridge stages — too short a dead time risks shoot-through, too long increases conduction loss on the freewheeling diode.
IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK
The Infineon IGB50N60TATMA1 is a hard-switching 600 V, 50 A single TRENCHSTOP IGBT3 in a TO-263 (D2PAK) surface-mount package, delivering up to 100 A pulsed collector current and 333 W of total power dissipation. It combines Infineon's third-generation trench-cell and field-stop concept to significantly improve both static and dynamic performance compared to prior NPT and PT generations. The part is qualified for switching frequencies from DC up to the tens-of-kHz range typical of motor drives, solar inverters, and welding converters. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-controlled gate of a MOSFET with the high-current, low-saturation-voltage conduction capability of a bipolar junction transistor. In the broader component hierarchy it sits between MOSFETs and thyristors in the discrete-semiconductor family, and within power-electronic systems it acts as the primary switching element in the power stage. IGBTs dominate medium-power (400 V to 1700 V blocking voltage) hard-switched converters where MOSFETs become conduction-loss-limited and BJTs require complex base-drive circuits. Key features of the IGB50N60TATMA1 include a low VCE(sat) typical of the Trenchstop 3 family, a short-circuit ruggedness of 5 µs minimum at TC = 25 °C and TJ = 150 °C, and a co-packaged anti-parallel diode optimized for hard-switched inductive loads. The TO-263 (D2PAK) package provides a solderable, surface-mount footprint while still exposing a large metal tab for PCB copper-pour heat spreading, enabling heatsink mounting for high-current continuous operation. Switching losses are tuned for hard-switching topologies with typical Eon in the sub-millijoule range. Architecture-wise, the device uses Infineon's third-generation field-stop (FS) trench gate, which shrinks the drift region thickness and reduces tail-current losses during turn-off. The integrated anti-parallel EmCon3 diode is matched to the IGBT's switching characteristics, suppressing reverse-recovery transients in bridge legs. The wide reverse-bias safe operating area (RBSOA) and square RBSOA allow reliable operation into short-circuit events and inductive snubbers, which is critical for motor and PFC applications. Typical applications for the IGB50N60TATMA1 include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, switched-mode power supplies (SMPS) up to several kilowatts, induction heating, welding equipment, and industrial motor drives for HVAC, pumps, and fans. Designers often pair it with 600 V gate drivers such as the 1ED020I12-B2 or EiceDRIVER 2ED020I12 in half-bridge and three-phase inverter configurations. When designing with this part, carefully observe the maximum lead temperature during soldering (JEDEC J-STD-020 MSL profile) and provide sufficient copper area under the D2PAK tab to keep junction temperature below 150 °C under worst-case continuous load. The 5 µs short-circuit rating demands a fast gate-driver with desaturation (DESAT) protection to safely turn off the device within the rated window.
IGC019S06S1 - 60V GaN Transistor, 1.3mΩ, PQFN 3x5 | Infineon
The Infineon IGC019S06S1 is a 60 V CoolGaN™ G3 normally-off enhancement-mode GaN power transistor in a PQFN 3x5 package with a typical on-state resistance of 1.3 mΩ, delivering a continuous drain current of 27 A (Ta) to 99 A (Tc) and supporting high-frequency, high-density power conversion. GaN (Gallium Nitride) transistors are wide-bandgap power semiconductors that switch much faster and with lower losses than silicon MOSFETs of equivalent Rds(on), enabling smaller magnetics and higher efficiency in switched-mode power conversion. Within the CoolGaN family hierarchy, the 60 V G3 sits between the 100 V/120 V G3 line and the lower-voltage G5 line, targeting point-of-load converters, Class-D audio, and motor-drive applications where switching frequency, dead-time loss, and reverse-conduction behaviour dominate the figure of merit. Key specifications include 60 V drain-source voltage rating, 1.3 mΩ typical Rds(on), a thermally-enhanced PG-TSON-6-2 (PQFN 3x5) surface-mount package, and integrated gate protection. The normally-off e-mode structure simplifies gate drive (compatible with standard gate-drive ICs) and removes the need for a negative rail. The very low on-state resistance and small package footprint enable high power density designs in 48 V point-of-load, telecom brick, and USB-PD applications. Technically, the device leverages Infineon's G3 CoolGaN process, which provides an order-of-magnitude lower gate charge (Qg) and output charge (Qoss) than equivalent silicon MOSFETs, dramatically reducing switching-related losses at high frequency. The exposed top metal and source-sense pin arrangement support a Kelvin-source connection for the cleanest gate loop at >100 V/ns switching. Typical applications include 48 V point-of-load conversion for datacom and AI-server rails, high-efficiency USB-PD chargers, Class-D audio amplifiers, BLDC motor drives, and industrial SMPS where power density and efficiency are primary design drivers. When designing with the IGC019S06S1, ensure the gate-drive loop is minimised (Kelvin-source connection strongly recommended), input decoupling is placed close to the drain/source pads, and the PCB thermal pad uses adequate copper pour to handle up to 45 W (Tc) dissipation. Avoid exceeding the maximum junction temperature. This page synthesises distributor pricing, drop-in alternatives and practical design notes not found on the manufacturer product page, delivering engineering-ready context for sourcing and design-in decisions.
IGC019S06S1XTMA1 - 60V GaN FET 1.3mΩ CoolGaN G3 | Infineon
The Infineon IGC019S06S1XTMA1 is a 60 V normally-off enhancement-mode CoolGaN G3 gallium-nitride power transistor with a very low on-state resistance of 1.3 mohm, rated for 27 A at 25 C ambient (99 A at Tc), housed in a compact PG-TSON-6-2 (PQFN 3x5) surface-mount package. A GaN power transistor is a wide-bandgap semiconductor switch belonging to the power transistor hierarchy: GaN HEMT -> FET -> power semiconductor -> power management. Unlike silicon MOSFETs, gallium nitride devices exhibit far lower gate charge and zero reverse-recovery loss, enabling faster switching frequencies, higher power density, and improved efficiency in medium-voltage converters. The normally-off (enhancement-mode) behavior means the device is OFF at zero gate voltage, simplifying gate-drive design and improving fail-safe behavior compared with cascode or depletion-mode GaN approaches. Key features of the IGC019S06S1XTMA1 include 1.3 mohm on-state resistance for minimal conduction loss, a 60 V drain-source rating for medium-voltage rails, current capability of 27 A at ambient and up to 99 A with adequate board cooling, and power dissipation of 3.3 W (Ta) or 45 W (Tc) depending on thermal management. Technically, the CoolGaN G3 generation from Infineon Technologies uses a lateral e-mode GaN HEMT structure optimized for high-frequency hard- and soft-switching. The PQFN 3x5 footprint keeps parasitic inductance low, which is critical because fast dv/dt and di/dt edges typical of GaN converters otherwise cause ringing and EMI. Typical applications include high-density LLC and buck converters, 48 V server and telecom power stages, USB-PD and adapter designs, and Class-D audio output stages where switching speed and low Rds(on) directly improve efficiency. Design consideration: because GaN parts have tight gate-drive requirements, keep the gate loop short and follow Infineon layout guidance; the exposed drain pad must be soldered to a generous copper pour for the 45 W (Tc) capability to be realized. This page synthesizes distributor listings, datasheet data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IGC025S08S1XTMA1 - 80V GaN FET, 1.8mOhm PQFN 3x5 | Infineon
The Infineon IGC025S08S1XTMA1 is an 80 V normally-off enhancement-mode (e-mode) GaN power transistor in a 6-pin PQFN 3x5 surface-mount package, delivering up to 86 A pulsed drain current (Tc) and a typical on-state resistance of 1.8 mOhm. As a member of Infineon's CoolGaN Generation 3 (G3) family, it provides ultra-low gate charge, ultra-low output charge, and zero reverse recovery charge, enabling switching frequencies well beyond the practical limits of silicon MOSFETs. A Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is a wide-bandgap power semiconductor that conducts electrons through a two-dimensional electron gas (2DEG) channel formed at an AlGaN/GaN heterojunction. Unlike silicon MOSFETs, GaN HEMTs have no body diode and therefore exhibit no reverse recovery charge (Qrr), making them ideal for hard-switched and half-bridge topologies. GaN transistors sit within the wider power-semiconductor hierarchy: GaN HEMT -> wide-bandgap semiconductor -> power transistor -> discrete semiconductor -> power management. Key features of the IGC025S08S1 include a maximum drain-source voltage (VDS) of 80 V, continuous drain current of 23 A at TA (25 C ambient) and 86 A at TC (case), power dissipation of 3.3 W (TA) and 45 W (TC), and a threshold voltage of 2.9 V maximum at 10 mA. Its exposed-die PQFN package enables top-side cooling and very low thermal resistance, supporting high power density layouts. The part is offered on Tape & Reel (XTMA1 suffix). Architecturally, the IGC025S08S1 uses a GaN-on-Si e-mode HEMT with an integrated gate structure that produces a normally-off characteristic without a cascode configuration, simplifying gate drive to a standard logic-level or 0-10 V drive. The result is a hard-switching figure of merit (FOM = RDS(on) x QG) more than 5x better than comparable silicon MOSFETs, which translates directly to lower switching losses, smaller magnetics, and higher system efficiency in compact power-conversion designs. Typical applications include 48 V DC-DC converters for data-center and telecom intermediate bus converters, server and AI-accelerator point-of-load supplies, high-frequency Class-D audio amplifiers, USB-PD and notebook adapters, photovoltaic microinverters, motor drives, and on-board chargers for light electric vehicles. The combination of high switching frequency (1 MHz+) capability and small footprint makes the IGC025S08S1 especially attractive where power density and efficiency are primary design constraints. When designing with this part, pay close attention to gate-drive layout - keep the gate-loop inductance below 1 nH by placing the gate driver within 5 mm of the gate pin and using a Kelvin-source connection where possible. Unlike Si MOSFETs, GaN HEMTs have no avalanche rating, so VDS transients must be clamped below 80 V with a low-inductance snubber or TVS. This page consolidates distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes that complement - rather than duplicate - the Infineon manufacturer datasheet.
IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon
The Infineon IGD06N60TATMA1 is a 600 V, 6 A hard-switching TRENCHSTOP IGBT3 discrete in a TO-252 (PG-TO252-3-11) surface-mount package, combining trench-cell and field-stop concepts to optimize both static and dynamic performance. The part delivers a collector-emitter voltage rating of 600 V, a nominal continuous collector current of 6 A, and a maximum power dissipation of 88 W, making it suitable for moderate-power switched-mode power conversion stages. An Insulated Gate Bipolar Transistor (IGBT) is a voltage-controlled bipolar power semiconductor that merges the high input impedance and fast switching of a MOSFET with the low conduction drop of a bipolar transistor. In the power-management hierarchy, IGBTs sit between MOSFETs and thyristors, bridging DC-DC converters, motor drives, and inverter topologies at voltage and current levels where MOSFET conduction losses become prohibitive. Key features of the IGD06N60TATMA1 include a TRENCHSTOP IGBT3 cell architecture with a soft-recovery emitter-controlled diode co-packaged on the same die, an integrated gate clamp structure, and low saturation voltage. The trench-cell field-stop geometry reduces both VCE(sat) and turn-off switching losses versus planar PT/NPT IGBT generations, while the soft-recovery diode minimizes reverse-recovery losses and EMI during hard-switching transitions. The device is intended for hard-switching topologies including PFC boost stages, half-bridge converters, and motor-drive inverters operating up to 600 V bus rails. In typical applications, the IGD06N60TATMA1 is used in PFC boost converters, induction-heating inverter half-bridges, washing-machine motor drives, dish-washer motor drives, refrigerator compressor drives, and air-conditioner outdoor-unit inverters. A continuous 6 A rating supports appliance-class motor power levels in the 200 W to 1500 W range. The integrated anti-parallel diode simplifies bridge designs where a body diode or external freewheeling diode would otherwise be required. When designing with this part, derate the collector current against switching frequency because switching losses scale with fsw. Provide a 15 V gate drive with respect to emitter, keep the gate-drive loop inductance below 50 nH to avoid Miller-induced turn-on, and respect the maximum junction temperature of 175 °C. The DPAK (TO-252) package requires at least 6 cm² of copper pour on the PCB tab to keep junction temperatures within safe limits.
IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon
The Infineon IGD08N120S7ATMA1 is a 1200V trench-field-stop single IGBT rated for 24A continuous collector current and 106W power dissipation, housed in a surface-mount PG-TO252-3 (DPAK) package. Built on Infineon's seventh-generation (S7) trench-field-stop technology, the device combines low saturation voltage with ultrafast switching for high-frequency power conversion. The trench-field-stop cell structure minimizes conduction loss while the thin-wafer technology reduces turn-off losses and tail current. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges a MOSFET gate input with a bipolar output stage, producing a voltage-controlled device with very low conduction loss at high currents. The IGBT sits in the wider hierarchy: power semiconductor -> discrete transistor -> switching device. IGBTs are widely used where MOSFETs' conduction losses become unacceptable at high voltages and where thyristors cannot be easily controlled by a gate signal. The S7 generation specifically targets industrial inverter and welding applications where switching frequencies of 20-50 kHz and high efficiency are simultaneously required. Key features include a typical VCE(sat) of 1.65 V at the rated operating point, a co-packaged anti-parallel emitter diode for inductive-load commutation, and a wide operating junction temperature range suited to industrial environments. The PG-TO252-3 surface-mount package offers a low-profile footprint suitable for high-density power boards while providing a manageable thermal path through the drain tab. Typical applications span induction heating inverters, welding power supplies, solar string inverters, UPS PFC and inverter stages, and motor drives in the low-to-mid kilowatt range. In each of these the IGD08N120S7's combination of 1200V blocking capability, 24A current handling, and S7 switching performance enables compact designs without sacrificing efficiency. As an industry-grade discrete, the part is well suited to commercial and industrial power conversion rather than automotive AEC-Q101 qualified systems. When designing with this part, observe the 80% derating recommendation from Infineon for lifetime and reliability. Provide adequate copper area on the drain tab for thermal dissipation, place the gate drive resistor close to the gate pin, and ensure the gate-emitter voltage stays within the absolute maximum ratings even during fault transients.
IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon
The Infineon IGI60L1111B1MXUMA1 is a 600 V, 110 mΩ half-bridge power stage integrating two enhancement-mode CoolGaN™ G5 switches with isolated gate drivers and a bootstrap diode in a 6 x 8 mm PG-TFLGA-27-2 package. It supports output current up to 7.4 A and an input supply of 10 V to 20 V for the gate-drive section, delivering a compact, high-density power conversion building block for motor drives and switched-mode power supplies. A GaN half-bridge power stage (often called an integrated power module or IPM) is a discrete-style power-conversion building block that combines two gallium-nitride switches with their gate drivers on a single substrate. Within the broader taxonomy, it belongs to the power-semiconductor module family -> discrete GaN FETs -> wide-bandgap semiconductors. Integrating the driver eliminates parasitic loop inductance between gate-driver outputs and the GaN gates, which is the single biggest obstacle to exploiting the multi-MHz switching capability of GaN. Key features include 600 V drain-source blocking capability, a typical on-resistance of 110 mΩ per switch at room temperature, integrated bootstrap diode that removes an external component, and a logic-level PWM input that interfaces directly with 3.3 V microcontrollers. The 110 mΩ Rdson combined with the low package inductance translates to very low switching loss compared with silicon MOSFETs, enabling either higher switching frequencies (smaller magnetics) or higher efficiency at conventional frequencies. Architecturally, each GaN switch is driven by a dedicated on-chip gate driver with 1 ns typical propagation matching, allowing the half-bridge to operate at switching frequencies well above 1 MHz when paired with appropriate magnetics and gate-loop PCB layout. The integrated bootstrap diode simplifies high-side supply generation, while under-voltage lockout on both the high-side and low-side rails protects the switches from insufficient gate enhancement during start-up or transient dips. Typical applications include low-to-medium power motor drives (compressor, fan, small appliance), telecom and server auxiliary SMPS, class-D audio amplifiers, photovoltaic micro-inverters, and USB-PD / laptop adapters. Designers value the small 6 x 8 mm footprint for high-density layouts where traditional discrete half-bridges require significantly more board area. When designing with this part, place decoupling capacitors as close as possible to the VCC and bootstrap pins and keep the high-current power loop area to a minimum to realise GaN's switching-speed benefit. Avoid slow PWM edges or excessive dead-time, which can trigger the hard-switching shoot-through protection. This page synthesizes Infineon-datasheet parametric data, distributor stock and pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet.
IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon
The Infineon IGI60L1414B1MXUMA1 is a 600V GaN (Gallium Nitride) half-bridge power stage in a PG-TFLGA-27-2 surface-mount package, integrating two 140 mΩ RDS(on) enhancement-mode GaN switches with high-side and low-side gate drivers, level shifting, and an ultra-fast low-resistance bootstrap diode. The device supports up to 6.0A continuous drain current and features application-configurable turn-on and turn-off speed with source/sink drive currents of +0.29 A / -0.7 A respectively, enabling designers to balance switching loss against EMI in hard-switched topologies operating at high dv/dt. A GaN half-bridge power stage is an integrated module that combines two gallium-nitride power transistors configured in a half-bridge (high-side + low-side) topology along with their dedicated gate drive circuitry. Gallium nitride, a wide-bandgap semiconductor, offers fundamentally higher electron mobility, lower output capacitance, and zero reverse-recovery charge compared to legacy silicon MOSFETs, allowing switching frequencies 5-10x higher with substantially reduced switching losses. GaN power stages belong to the wider hierarchy: GaN transistor → power semiconductor → discrete semiconductor → power management. By integrating the gate driver and bootstrap diode on the same die/substrate, the IGI60L1414B1M family eliminates the parasitic inductance that would otherwise limit switching performance in a discrete GaN + external driver design. Key specifications include 600V drain-source blocking voltage, 140 mΩ on-resistance per switch, integrated bootstrap diode, application-configurable turn-on/turn-off resistors, and built-in under-voltage lockout. The PG-TFLGA-27-2 package provides a low-inductance land-grid-array footprint with an exposed thermal pad for direct PCB cooling. The integration of the high-voltage level shifter and the low-side driver into a single package dramatically reduces the loop inductance between gate drive and power loop, which is critical for containing GaN switching transients. Typical applications include switched-mode power supplies (SMPS), totem-pole bridgeless PFC stages, LLC and phase-shifted full-bridge converters, motor drive inverters, and Class-D audio amplifiers. The configurable gate drive strength allows optimization for different switching frequencies (typically 100 kHz to 1 MHz) and load conditions. The 600V rating and integrated bootstrap make it well suited for 400V bus systems derived from rectified 230V AC mains. For optimum EMI, the designer should minimize the high-side and low-side power loop inductance by placing input ceramic bypass capacitors directly beneath the exposed pad and using a thin dielectric PCB stack-up. The bootstrap capacitor value should follow the sizing guidance from the datasheet, which cross-references the Infineon 2ED2101S06F standalone driver application note for the calculation methodology. Always consult the manufacturer datasheet for the absolute maximum drain-source voltage derating under switching transients and inductive load conditions. This page synthesizes distributor pricing, datasheet specifications, and drop-in alternatives that are not aggregated on the manufacturer product page, providing an engineering-focused view of the IGI60L1414B1MXUMA1 for power-electronics designers.