MOSFETs
Produtos (1294)
IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon
The Infineon IPG20N10S4L22AATMA1 is a 100 V dual N-channel OptiMOS T2 power MOSFET array delivering 20 A continuous drain current per channel with a typical R<sub>DS(on)</sub> of 22 mΩ, packaged in an 8-pin PG-TDSON-8-10 (Wettable Flank) surface-mount footprint with 60 W power dissipation. Both MOSFETs are logic-level (10 V V<sub>GS</sub> max drive) with AEC-Q101 automotive qualification, making this part suitable for safety-critical automotive switching and industrial power conversion. A dual MOSFET array integrates two independent N-channel transistors in one thermally-shared package, allowing engineers to build half-bridges, full-bridges, synchronous rectifiers, or bidirectional switches with fewer PCB traces and matched thermal behavior. In the broader taxonomy, this device sits within power MOSFETs -> MOSFET arrays -> discrete semiconductors. The dual-channel configuration reduces board area by approximately 40% versus two discrete single-channel MOSFETs while simplifying gate-drive routing. Key features include 100 V V<sub>DS</sub> drain-source breakdown, 22 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level V<sub>GS(th)</sub> for direct microcontroller GPIO drive, low Q<sub>g</sub> for reduced switching losses, and wettable flank leads that enable automated optical inspection (AOI) of solder joints. The OptiMOS T2 trench technology delivers a strong figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for high-frequency switching. Typical applications include automotive 12 V/24 V load switching, DC-DC converter synchronous rectification, motor drive half-bridges, solenoid/relay drivers, LED driver stages, and reverse-battery protection circuits. The 100 V rating provides ample headroom for 24 V automotive load-dump transients up to ~40 V. When designing with this part, place both source pins on a continuous copper pour to maximize thermal spreading. Wettable flank terminals allow AOI inspection - critical for automotive PPAP/PSW deliverables. Confirm V<sub>GS</sub> drive voltage does not exceed the absolute maximum (typically ±20 V) and use a gate resistor to dampen parasitic ringing. This page consolidates distributor pricing, drop-in alternatives, and application context that complement the manufacturer datasheet for faster engineering decisions.
IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon
The Infineon IPG20N10S4L35AATMA1 is a dual N-channel logic-level enhancement-mode MOSFET housed in a wettable-flank PG-TDSON-8-10 (TDSON EP) surface-mount package, rated for 100 V VDS, 20 A continuous drain current per channel, and 35 mΩ maximum R<sub>DS(on)</sub> at 10 V VGS. It is qualified to AEC-Q101, operates across -55°C to +175°C junction temperature, and is part of Infineon's OptiMOS™ automotive-grade power MOSFET family. The device dissipates up to 43 W at TC=25°C and is 100% avalanche-tested for robustness. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain terminals. Within the broader power-semiconductor taxonomy, this part sits in the N-channel enhancement-mode MOSFET family, which is the most common topology for low-side and high-side switching. Logic-level MOSFETs such as the IPG20N10S4L-35 are designed to be fully enhanced at VGS as low as 4.5 V, allowing direct drive from microcontrollers, gate-driver ICs, and 5 V logic rails without a charge pump or level shifter. Key differentiating features include 35 mΩ R<sub>DS(on)</sub> at 10 V VGS and 17 A ID, logic-level gate drive (fully enhanced at 4.5 V), dual N-channel configuration for synchronous or half-bridge topologies, and an integrated exposed pad (PG-TDSON-8-10) that doubles as the drain connection and thermal relief. The wettable-flank terminations enable automated optical inspection (AOI), which is required by most Tier-1 automotive PCB-assembly processes. The IPG20N10S4L-35 uses Infineon's OptiMOS™ trench-cell process technology, which minimizes figure-of-merit (R<sub>DS(on)</sub> × Qg) to reduce both conduction and switching losses. The two FETs inside share the same silicon die geometry but are connected to independent source pins, allowing designers to use them in parallel, in a half-bridge, or as two independent low-side switches. Typical applications include automotive LED drivers, 12 V/24 V DC-DC converters, motor control H-bridges, reverse-polarity protection circuits, and load-switching modules. The 100 V rating also makes the part suitable for 48 V mild-hybrid and industrial bus systems with adequate derating. When designing with this part, place the gate-drive resistor (typically 10-100 Ω) close to the gate pin and minimize the gate-loop area to limit ringing. The exposed drain pad must be soldered to a sufficiently large copper pour (at least 25 mm² on a 1 oz board) to keep R<sub>θJA</sub> within the datasheet limits. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet, helping engineers select, source, and lay out the IPG20N10S4L-35 faster.
IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon
The Infineon IPG20N10S4L35ATMA1 is an automotive-grade dual N-channel MOSFET in a 100 V OptiMOS™ class, delivering 20 A continuous drain current per channel with a maximum R<sub>DS(on)</sub> of 35 mΩ at V<sub>GS</sub>=10 V, housed in a compact PG-TDSON-8-4 surface-mount package. The dual-MOSFET integration consolidates two 100 V N-channel transistors into one 8-pin thermally-enhanced outline, replacing two discrete DPAK parts and saving significant PCB area while sharing a single thermal pad. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals. Dual N-channel MOSFET arrays belong to the broader category of discrete power semiconductors within power management and motor/relay driver subsystems. Logic-level gate drive (V<sub>GS(th)</sub> ≈1-2 V) allows direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting, while OptiMOS™ technology reduces gate charge (Q<sub>G</sub>) and switching losses versus earlier planar generations. Key features include 100 V drain-to-source rating, 35 mΩ maximum on-resistance at V<sub>GS</sub>=10 V and I<sub>D</sub>=17 A, logic-level gate threshold, and AEC-Q101 automotive qualification with 175°C operating temperature. The PG-TDSON-8-4 package exposes a large metal pad for low thermal resistance (≈1 K/W on a 1 in² 1 oz copper pour) and supports MSL1 to 260°C peak reflow. 100% avalanche-rated devices survive unclamped inductive switching events common in relay and solenoid drive applications. Typical applications include automotive LED lighting drivers, H-bridge motor half-bridges, DC-DC converter synchronous rectifiers, and high-side/low-side load switches in 12 V/24 V automotive systems. The dual-channel arrangement suits full-bridge configurations where two MOSFETs switch in complementary fashion across a load. When designing with this device, ensure the gate drive voltage reaches at least 4.5 V for full enhancement and adequate R<sub>DS(on)</sub>. Place gate-series resistors in the 10-100 Ω range to damp ringing, and route the switching node (half-bridge midpoint) away from sensitive analog traces to minimize EMI coupling.
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
The Infineon IPL60R060CFD7AUMA1 is a 600 V N-channel CoolMOS™ CFD7 superjunction power MOSFET delivering 40 A continuous drain current (Tc) and 219 W power dissipation in a surface-mount PG-VSON-4-1 package. Built on Infineon's latest superjunction (SJ) technology, it provides a typical R_DS(on) of 60 mΩ at V_GS = 10 V and is optimized for soft-switching resonant converter topologies such as phase-shift full-bridge (ZVS) and LLC half-bridge. A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical power in switching-mode power supplies (SMPS), motor drives, and power-factor-correction (PFC) stages. Within the broader taxonomy, the IPL60R060CFD7 sits as: MOSFET -> power MOSFET -> high-voltage superjunction MOSFET -> CoolMOS family -> Power Management semiconductor. Its low on-state resistance and fast body diode make it ideal for the primary side of telecom rectifiers, server power supplies, and industrial welding inverters. Key features include an integrated fast body diode for hard-commutation robustness, ultra-low reverse-recovery charge (Q_rr) for low-loss ZVS operation, optimized gate charge (Q_G,typ = 79 nC at V_GS = 10 V) for reduced driver losses, and a 4.5 V gate-threshold rating for standard MOSFET gate-drive IC compatibility. The CFD7 generation succeeds the CFD2 platform with reduced switching losses and improved EMI behavior in resonant converter applications. Technically, the device utilizes charge-compensation superjunction cell architecture, achieving a figure-of-merit (FOM = R_DS(on) × Q_G) that is markedly lower than planar MOSFETs at the same voltage class. This translates into higher system efficiency in the 500 W to 3 kW power-conversion range, where every percentage-point of efficiency gain translates to substantial thermal and energy savings. Typical applications include server and telecom switched-mode power supplies (SMPS), photovoltaic inverters, uninterruptible power supplies (UPS), electric-vehicle charging stations, induction-heating equipment, and industrial welding power stages. Its AEC-Q101-compatible platform also makes it suitable for e-mobility onboard chargers. When designing with this device, observe the V_GS(th) maximum of 3.5 V for logic-level gate drives; ensure the gate-drive stage delivers at least +10 V for full enhancement. PCB layout must minimize the high-frequency switching-loop inductance to limit voltage overshoot, and the exposed pad of the PG-VSON-4-1 package must be soldered to a sufficiently large copper pour for thermal dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable reference for selecting and laying out the IPL60R060CFD7AUMA1 in high-voltage converter designs.
IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon
The Infineon IPL60R065C7AUMA1 is a 600V N-channel power MOSFET built on Infineon's CoolMOS C7 superjunction (SJ) technology, offering an ultra-low on-resistance of 65 mΩ typical in a source-down PG-VSON-4-1 surface-mount package. It is rated for 29 A continuous drain current at 25 °C case temperature and 180 W maximum power dissipation, targeting high-efficiency, high-density switched-mode power supplies. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the primary active switching element in modern switched-mode power supplies (SMPS), used to chop a DC input into a high-frequency AC waveform that is then transformed, rectified, and filtered. The IPL60R065C7AUMA1 belongs to the high-voltage MOSFET hierarchy: MOSFET → power MOSFET → superjunction MOSFET → CoolMOS family → 600V class. The superjunction architecture replaces the conventional planar drift region with alternating P/N columns, dramatically reducing on-state resistance per unit area and gate charge for a given breakdown voltage. Key features include 65 mΩ typical R_DS(on) at V_GS = 10 V, an integrated gate-source Zener clamp for ESD protection, and a source-down package construction that maximizes PCB copper utilisation for cooling. The device also delivers very low switching losses (E_OSS typically < 4 µJ) and supports dv/dt robustness typical of the CoolMOS C7 family, simplifying EMI filter design in hard-switched PFC and LLC topologies. Architecturally, the CoolMOS C7 generation refines the C3/C6 platforms with reduced gate charge (Q_G typ. ~70 nC) and improved body-diode reverse-recovery softness, enabling higher switching frequencies (>100 kHz in PFC) without sacrificing efficiency. The source-down PG-VSON-4-1 footprint removes the traditional drain-tab, allowing the drain current path to flow directly into top-side copper rather than through a thermal via array. Typical applications include server and telecom 80 PLUS Titanium-grade switched-mode power supplies, industrial welding and induction heating converters, solar inverters, on-board EV chargers, and high-frequency telecom rectifier modules. Its low Q_G × R_DS(on) figure of merit also suits synchronous rectification on the secondary side of high-power AC/DC converters. When designing with this MOSFET, place multiple thermal vias directly under the source-down pad to channel heat into inner copper planes, and keep the gate-drive loop area minimal (gate resistor + driver return path < 5 mm²) to suppress ringing at turn-on. Verify creepage and clearance for the 600V rating against pollution degree requirements in your end equipment. This page synthesizes distributor pricing, drop-in CoolMOS alternatives in the same PG-VSON-4-1 footprint, and PCB layout notes that complement the manufacturer datasheet.
IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPL60R065P7AUMA1 is a 600 V N-channel superjunction (CoolMOS™ P7) power MOSFET rated at 65 mΩ R<sub>DS(on)</sub>, 41 A continuous drain current (T<sub>C</sub>), and 201 W power dissipation (T<sub>C</sub>), housed in a surface-mount PG-VSON-4 package with exposed thermal pad. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch and amplify power in electronic circuits. The 600 V rating places this part in the high-voltage MOSFET family used in offline converters, where the device sits in the power path of switched-mode power supplies (SMPS) and bridges the gap between low-voltage logic ICs and discrete semiconductors on the system hierarchy: MOSFET -> discrete semiconductor -> power management -> semiconductor. Superjunction MOSFETs like CoolMOS P7 use a charge-balanced drift region to simultaneously reduce R<sub>DS(on)</sub> and switching losses, replacing conventional planar MOSFETs in high-voltage, high-frequency power conversion. Key differentiating features include 65 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, 600 V drain-source breakdown voltage, 2895 pF input capacitance (C<sub>iss</sub>) at 400 V V<sub>DS</sub>, 7 ns rise time and 4 ns fall time, and 3.5 V gate threshold voltage. The PG-VSON-4 package with exposed pad delivers low thermal resistance suitable for high-current switching. CoolMOS P7 is the successor to the CoolMOS P6 series, providing an improved price/performance ratio. The CoolMOS P7 superjunction architecture uses deep-trench charge-balancing to deliver best-in-class figure-of-merit (R<sub>DS(on)</sub> × Q<sub>g</sub>) compared to planar 600 V MOSFETs. Its low Q<sub>rr</sub> and fast body-diode behavior reduce switching losses in hard-switched topologies and improve light-load efficiency in resonant converters. Compared to the older P6 generation, P7 improves ease-of-use (wider gate-drive compatibility, integrated protection features) while reducing both conduction and switching loss. Typical applications include switched-mode power supplies (SMPS) for servers and telecom, power-factor correction (PFC) stages, hard-switched half-bridge and full-bridge converters, LLC resonant converters, and industrial motor drives. The 600 V drain rating supports universal-input rectified mains (85-305 VAC) designs. When designing with this device, ensure the gate driver can supply sufficient peak current (>2 A) to rapidly charge/discharge the 2895 pF input capacitance and minimize switching loss. The exposed thermal pad MUST be soldered to a sufficient copper pour area (recommended >= 50 mm² on JEDEC 1s0p test board) to keep junction temperature within the 150 °C maximum under continuous full-load conditions. This page synthesizes distributor pricing, same-family CoolMOS drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPL60R085P7AUMA1 is a 600 V N-channel superjunction (SJ) power MOSFET from the CoolMOS P7 family, featuring a maximum drain-source on-resistance of 85 mΩ at 10 V gate drive and a continuous drain current of 39 A at 25 °C case temperature. Housed in the source-down PG-VSON-4 surface-mount package with an exposed drain pad, it dissipates up to 154 W of thermal power and is rated for an avalanche-energy rugged switching envelope. The IPL60R085P7AUMA1 is specified as an industrial-grade part qualified to JEDEC standards, with a maximum junction temperature of 150 °C and an ESD robustness greater than 2 kV HBM on every pin per the Infineon datasheet. What is a superjunction MOSFET? A superjunction (SJ) MOSFET is a high-voltage power transistor that replaces the conventional power MOSFET's epitaxial drift region with a stack of alternating P/N junctions. This architecture, pioneered by Infineon as CoolMOS, dramatically reduces the specific on-resistance (RDS(on) × area) below the silicon limit of planar MOSFETs, enabling either lower conduction loss in the same footprint or higher power density in a smaller package. SJ MOSFETs sit in the hierarchy: power MOSFET -> discrete semiconductor -> power management building block -> high-voltage SMPS switch. Key features of the IPL60R085P7AUMA1 include significant reduction of switching and conduction losses versus the prior CoolMOS P6 generation, integrated gate ESD protection above 2 kV HBM, very low gate charge (Qg typically optimized for HF SMPS), a wide safe operating area, and full JEDEC industrial qualification. The P7 family targets high-frequency hard-switched topologies where switching loss dominates, allowing designers to push switching frequencies from 65 kHz toward 130 kHz or beyond while maintaining flat efficiency curves. The IPL60R085P7AUMA1 uses Infineon's seventh-generation CoolMOS superjunction technology with a refined cell pitch that lowers figure-of-merit RDS(on) × Eoss and improves Coss-related switching loss. The PG-VSON-4 (also labelled VSON-4) source-down package provides a low-inductance drain tab that doubles as the thermal pad, simplifying PCB heatsinking and reducing source-parasitic inductance for cleaner gate drive at high di/dt. Typical applications include telecom and server SMPS, industrial variable-frequency drives (S1-class), solar inverters, EV onboard chargers, and resonant LLC and PFC stages in high-voltage converters. Designers select this part when they need a balance of low conduction loss and high switching frequency in industrial-grade silicon. When designing with this device, gate-drive voltage must stay within the datasheet's recommended VGS range (typically ±20 V max, +10 V nominal) and a small external gate resistor dampens the high-speed switching loop. Thermal management depends on copper area beneath the exposed drain pad rather than a top-side heatsink, and designers should respect the SOA curves for hard-commutated avalanche events. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers shorten the selection and procurement cycle for 600 V SMPS designs.
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
The Infineon IPL60R105P7AUMA1 is a 600V N-channel power MOSFET built on Infineon's 7th-generation CoolMOS™ P7 superjunction (SJ) platform, offered in a 4-pin PG-VSON-4 surface-mount package with an exposed thermal pad. The device carries a 105 mΩ maximum on-resistance rating at 25°C, a continuous drain current rating of 33 A at Tc, and a maximum power dissipation of 137 W at Tc, making it suitable for high-voltage power-conversion stages where both switching speed and conduction loss matter. What is a superjunction MOSFET? A superjunction (SJ) power MOSFET is a high-voltage MOSFET architecture that replaces the conventional N-epi drift region with alternating P/N columns, dramatically reducing the specific on-resistance (RDS(on) × area) compared with planar MOSFETs of the same voltage class. Within Infineon's portfolio, the CoolMOS family is the superjunction line; the P7 generation succeeds the P6 series with lower gate charge, improved EMI behavior, and a wider safe-operating area. The IPL60R105P7AUMA1 therefore occupies the role of a 600 V-class switching transistor within the broader power-semiconductor hierarchy: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7 family → discrete semiconductors. Key electrical features include a 600 V drain-source breakdown voltage (V(BR)DSS), a typical gate threshold of 3.5 V, an integrated ESD-protected gate, and a low effective output capacitance that reduces turn-on and turn-off switching losses. The PG-VSON-4 (also referred to as Thin-PAK or Q-DPAK-style SMD) package delivers an extremely small footprint relative to its current-handling capability, and the exposed drain pad underneath the body serves as both the main electrical drain terminal and the primary thermal dissipation path to the PCB. Architecturally, the CoolMOS P7 cell uses a charge-compensated drift region that allows the die to reach very low figure-of-merit (FOM = RDS(on) × Qg) values, which directly translates into lower conduction and switching losses in hard-switched topologies such as PFC, LLC, and flyback converters. The P7 family was specifically designed to offer ease-of-use: a wider gate-drive window, higher avalanche ruggedness, and improved body-diode behavior compared with older P6 parts. Typical applications for the IPL60R105P7AUMA1 include power-factor-correction (PFC) boost stages in server and telecom SMPS, LLC half-bridge primaries in LED drivers and adapters, solar inverters, auxiliary power supplies in industrial equipment, and electronic ballasts for lighting. Designers choose this part when they need a 600 V, ~100 mΩ-class SJ MOSFET in a thermally efficient SMD footprint rather than a TO-220 or TO-247 through-hole package. When designing with this part, the primary trade-off is package thermal performance: while the VSON-4 footprint is compact, the device dissipates up to 137 W at Tc, so a substantial copper pour on the PCB and proper thermal vias under the exposed pad are mandatory to keep junction temperature within safe limits in continuous high-current operation. This page synthesizes distributor pricing, pin-compatible alternatives, and practical design notes that go beyond what the manufacturer datasheet alone provides.
IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon
The Infineon IPL60R115CFD7AUMA1 is a 600V, 115mOhm N-channel power MOSFET from the CoolMOS CFD7 family, rated for 22A continuous drain current at the case and housed in a surface-mount PG-VSON-4 package with an exposed thermal pad. It is engineered for high-voltage, high-efficiency switching in resonant and hard-switched topologies including LLC, phase-shift full-bridge, and PFC stages. The device integrates a fast-body-diode, addressing dead-time losses and reverse-recovery challenges in bridge converters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that turns on and off rapidly to regulate energy flow between a source and a load. Superjunction MOSFETs such as the CoolMOS family occupy the middle tier of the power-semiconductor hierarchy: MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> discrete semiconductor. They balance conduction loss, switching loss, and ruggedness better than planar MOSFETs at 500V-950V blocking voltages. Key features include 115mOhm maximum on-resistance (RDS(on)) at VGS=10V, 600V drain-source breakdown voltage, integrated fast body diode for reduced Qrr, low gate charge for fast switching transitions, and dv/dt ruggedness for hard-switched environments. The PG-VSON-4 (5x6mm) package provides an exposed pad that reduces thermal resistance, allowing the device to handle elevated dissipation in compact form factors. The CoolMOS CFD7 cell architecture uses an optimized superjunction geometry to minimize the figure-of-merit RDS(on)*Qg, achieving both low conduction loss and low switching loss. The fast body diode eliminates the need for external anti-parallel diodes in half-bridge and full-bridge configurations, reducing BOM count and improving efficiency in resonant converters. Typical applications include server and telecom switched-mode power supplies (SMPS), solar inverters, EV on-board chargers, industrial welding equipment, and induction heating. The 600V rating and integrated diode make it particularly suitable for resonant LLC converters and PFC boost stages in 380V/400V DC-link systems. When designing with this device, verify SOA at the operating point and size the gate-drive circuit to deliver sufficient peak current to charge and discharge the input capacitance quickly. Layout should minimize source-loop and gate-loop inductance to avoid ringing and dv/dt-induced false turn-on. This page synthesizes distributor pricing, drop-in alternatives, and design considerations beyond the manufacturer datasheet, giving engineers a single reference for selecting and applying the IPL60R115CFD7AUMA1.
IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon
The Infineon IPL60R125C7AUMA1 is a 600 V N-channel power MOSFET from the CoolMOS C7 superjunction family, rated for 17 A continuous drain current (Tc) and 103 W power dissipation (Tc), housed in a surface-mount PG-VSON-4 (4-pin) package. The device combines a low on-state resistance of 125 mOhm with 600 V drain-source breakdown, delivering best-in-class switching performance for high-frequency power conversion stages. A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P/N epitaxial columns in the drift region to overcome the silicon limit of conventional MOSFETs, dramatically reducing RDS(on) per unit area and improving switching loss trade-offs. The CoolMOS C7 family in particular targets hard-switching PFC, TTF (two-transistor forward), and LLC resonant stages in switched-mode power supplies, server PSUs, telecom rectifiers, and industrial welding/induction heating. The superjunction approach (pioneered and named by Infineon) yields substantially lower Eoss turn-off losses than prior generation CoolMOS CP devices while keeping the same 600 V-950 V voltage class. Key specifications include a 600 V VDS maximum, 17 A ID continuous (Tc), 125 mOhm RDS(on) maximum, and 103 W power dissipation. The C7 generation also features an ultra-low figure-of-merit (RDS(on) x Qg) which reduces gate-drive losses and enables higher switching frequencies (typically 65 kHz to 300 kHz in PFC stages). The PG-VSON-4 package measures approximately 8x8 mm with a large exposed drain pad that doubles as the thermal pad, enabling very low thermal resistance and minimal parasitic source inductance for clean switching waveforms. Typical applications span telecom/server SMPS power factor correction (PFC) boost stages, LLC half-bridge primary switches, two-transistor forward (TTF) converters, solar inverters, and industrial motor drives. Compared to planar MOSFETs, the C7 family typically halves switching losses in the 600 V class, allowing designers to either raise switching frequency (smaller magnetics) or push power density higher within the same thermal envelope. The IPL60R125C7AUMA1 in particular sits in the mid-current tier of the C7 family, making it well-suited to 1-3 kW power stages where its 125 mOhm on-resistance and 17 A rating align well with typical CCM PFC inductor ripple currents. When designing with this part, pay close attention to gate-drive voltage and layout. CoolMOS C7 is fully enhanced at +10 V VGS (typical Vth around 3.5 V), so a standard gate-drive supply of 10-12 V is appropriate. The PG-VSON-4 source-pin layout minimizes common-source inductance; nevertheless the gate loop should be kept small with a 10 Ohm-47 Ohm gate resistor to dampen ringing. Thermal design must account for the fact that RDS(on) increases with temperature, so worst-case thermal analysis at 100 C junction is recommended. This page synthesizes Infineon distributor pricing (as of 2026-09-15), drop-in alternatives in the same PG-VSON-4 footprint, and practical design notes not found in the bare manufacturer datasheet, including thermal, PCB layout, and gate-drive guidance.
IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΩ 27A | Infineon
The Infineon IPL60R125P7AUMA1 is a 600 V N-channel power MOSFET in Infineon's CoolMOS P7 superjunction (SJ) family, delivering 125 mOhm maximum RDS(on) and 27 A continuous drain current in a ThinPAK 8x8 surface-mount package with 4 pins plus exposed pad. As the seventh-generation successor to the CoolMOS P6, it combines the fast switching characteristics of superjunction MOSFETs with greatly improved ease-of-use, lower gate charge, and tighter parametric distribution. The IPL60R125P7AUMA1 is targeted at high-efficiency, high-voltage switched-mode power supplies. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate structure to modulate current flow between drain and source terminals. Superjunction MOSFETs replace the conventional planar or trench DMOS drift region with alternating P- and N-doped pillars, which simultaneously raise the breakdown voltage and reduce on-state resistance for a given silicon area. This technology belongs to the broader hierarchy: power MOSFET -> discrete semiconductor -> power transistor -> power management building block. Key specifications include 600 V drain-source breakdown, 125 mOhm max RDS(on) at 25 C, 27 A continuous ID at 25 C case temperature, ultra-low total gate charge (Qg) of around 36 nC, very low Eon and Eoff switching energies, integrated Zener-protected gate, and a kelvin-source pin for gate-drive return. The ThinPAK 8x8 package exposes the drain tab on top of the package for double-sided cooling. The CoolMOS P7 platform is built on Infineon's superjunction process with a refined cell pitch and integrated gate Zener diode. The exposed-drain ThinPAK 8x8 package reduces source inductance versus D2PAK by approximately 70 percent, lowering voltage overshoot during hard switching and enabling higher switching frequencies without compromising EMI. Typical applications include telecom rectifiers, server and datacom SMPS, industrial PFC and LLC stages, solar inverters, EV on-board chargers, and high-frequency welding/induction power stages. The combination of low switching loss and small ThinPAK footprint suits compact, fan-cooled designs where heat-sinking area is limited. When designing with this device, ensure a kelvin-source connection to the gate driver ground to fully exploit the low-inductance ThinPAK package, keep gate-drive loop area minimal, and respect the dv/dt-induced turn-on risk with a properly sized gate-pull-down resistance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon
The Infineon IPL60R180P6AUMA1 is an N-channel 600 V superjunction (CoolMOS P6) power MOSFET housed in a surface-mount PG-VSON-4 (Thin-PAK) package. It features a maximum drain-source on-resistance of 180 mΩ and a continuous drain current of 22.4 A at Tc, with a power dissipation rating of 176 W at Tc. The part is part of Infineon's CoolMOS P6 family, which targets high-efficiency, high-voltage switched-mode power conversion. A superjunction MOSFET (also called SJ-MOS, or in Infineon's branding CoolMOS) is a high-voltage power MOSFET architecture that uses alternating deep p- and n-columns in the drift region. This breaks the silicon limit of conventional MOSFETs and delivers an order-of-magnitude lower on-state resistance per unit area compared to standard planar high-voltage MOSFETs. Superjunction MOSFETs therefore sit at the top of the high-voltage power-switching hierarchy: MOSFET -> superjunction MOSFET -> high-voltage power MOSFET -> discrete power semiconductor. CoolMOS P6 specifically targets price/performance positions for hard- and soft-switching topologies. Key features of the IPL60R180P6AUMA1 include very low drain-source on-resistance (RDS(on)) of 180 mΩ max at VGS=10 V, low gate charge (Qg) for fast switching, integrated protection against ESD, low EMI signature thanks to controlled dV/dt, and a wide operating junction temperature range of -55°C to +150°C. The PG-VSON-4 (Thin-PAK) surface-mount package offers an exposed drain pad for low thermal resistance, enabling compact PCB designs without bulky heatsinks in moderate-power applications. Architecturally, the CoolMOS P6 combines an ultra-fast body diode, reduced Qrr (reverse recovery charge), and a gate-oxide optimized for 10 V drive. Compared to the older P5 generation, P6 improves ease-of-use through a wider safe operating area and better light-load efficiency. The Thin-PAK package further reduces parasitic inductance compared to TO-220/TO-247 through-package variants. Typical applications include telecom and server SMPS power supplies, PC silver-box and notebook adapters, solar inverters, LED lighting drivers, HID lamp ballasts, e-mobility charging, and industrial PFC stages. The 600 V drain rating also gives ample derating margin for universal-input rectified mains (85-265 VAC rectified to ~380 VDC bus). When designing with this device, prioritize gate-drive design - use a 10 V gate-source supply with low-impedance drive to fully enhance the channel and minimize switching loss. Place the gate-source resistor (typically 10-100 Ω) close to the device to suppress ringing from the gate-loop inductance. This page synthesizes Infineon distributor pricing, drop-in PG-VSON-4 alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
IPL60R210P6AUMA1 - 600V CoolMOS P6 MOSFET, 19.2A, 210mΩ | Infineon
The Infineon IPL60R210P6AUMA1 is a 600V N-channel CoolMOS™ P6 superjunction power MOSFET rated for 19.2 A continuous drain current at 25 °C case temperature and 151 W power dissipation, housed in a surface-mount PG-VSON-4 (ThinPAK) package with an ultra-low on-resistance of 210 mΩ (max at 25 °C). Built on Infineon's superjunction (SJ) CoolMOS™ P6 technology platform, this device combines the high-voltage capability of planar MOSFETs with significantly lower RDS(on) per die area, achieving a figure of merit (FOM) competitive with best-in-class 600V MOSFETs. A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P/N epitaxial columns under the gate oxide to achieve a much higher breakdown voltage per unit on-resistance than conventional planar DMOS designs. CoolMOS™ P6 specifically targets low-power to mid-power price/performance segments, balancing switching loss, body-diode ruggedness, and ease-of-use features such as integrated gate protection and a simple gate-drive requirement. Key features of the IPL60R210P6AUMA1 include an integrated gate protection Zener clamp, low effective output capacitance (Coss) for reduced switching loss, and a dv/dt ruggedness profile suitable for hard-switched topologies. The PG-VSON-4 package offers a very small footprint (approximately 8 x 8 mm) with an exposed drain pad that doubles as the PCB thermal dissipation path, enabling compact high-density power designs. The device is specifically engineered for low-power SMPS (switched-mode power supply) front ends and price/performance applications. Compared to older CoolMOS™ C3 or CP product lines, the P6 family reduces gate charge (Qg) and output charge (Qoss), while maintaining the well-known CoolMOS body-diode behavior. The integrated Zener between gate and source simplifies gate-drive design by clamping transient over-voltage events. Typical applications include LED driver front stages, PC silver-box ATX auxiliary rails, industrial auxiliary supplies up to a few hundred watts, telecom rectifier first stages, and small server / appliance SMPS. The part targets cost-sensitive 600 V designs where ease of use and a robust gate structure outweigh the need for the absolute lowest FOM of larger CoolMOS families. When designing with the IPL60R210P6AUMA1, the integrated gate-source Zener means a standard 12 V gate drive is appropriate; designers should not add an external gate Zener in parallel. The PG-VSON-4 drain pad must be soldered to a sufficiently large copper area to keep RthJA within SOA, typically at least 1 square inch of 2 oz copper on each layer. This page synthesizes distributor pricing snapshots, pin-compatible drop-in alternatives within the CoolMOS™ P6 family, cross-brand equivalents in the same PG-VSON-4 footprint, and practical design notes — synthesis content not found in any single source on the web.
IPL60R285P7AUMA1 - 600V 285mΩ 13A CoolMOS P7 MOSFET | Infineon
The Infineon IPL60R285P7AUMA1 is a 600V N-channel superjunction power MOSFET from the CoolMOS P7 family, rated for 13A continuous drain current at 25°C case temperature and 285 mΩ maximum on-state resistance (RDS(on)) at 25°C. Housed in a surface-mount PG-VSON-4 package (DPAK-equivalent footprint), it is intended for high-voltage switched-mode power supply designs where efficiency, thermal performance, and ease of use are critical. The device combines the fast-switching characteristics of superjunction (SJ) MOSFET technology with improved gate charge and output capacitance figures compared with the prior CoolMOS P6 generation. A superjunction power MOSFET is a high-voltage MOSFET architecture that uses alternating P- and N-doped vertical pillars to support the blocking voltage, enabling an order-of-magnitude lower RDS(on) per unit silicon area than conventional planar MOSFETs of the same voltage class. The CoolMOS P7 family is Infineon's 7th-generation superjunction platform and serves as the successor to the P6 line. Within the broader semiconductor taxonomy, this part sits at: power MOSFET -> discrete semiconductor -> high-voltage switch -> power management. Synonyms include "SJ MOSFET" and "high-voltage power transistor." Key specifications include 600V drain-to-source breakdown (V(BR)DSS), 13A continuous drain current (ID) at Tc=25°C, pulsed drain current of approximately 52A, and a maximum power dissipation of 59W at Tc=25°C. The on-state resistance of 285 mΩ is specified at VGS=10V. The part features an integrated ESD protection diode on the gate, a fast body diode suitable for hard-switching topologies, and qualified operation over an industrial temperature range. The PG-VSON-4 package offers an extremely low-profile surface-mount footprint with a Kelvin-source connection for improved gate-drive behavior and a low thermal resistance path to the PCB copper pad. This makes the IPL60R285P7AUMA1 well suited to compact high-density SMPS designs where conventional TO-220 or TO-247 packages cannot be used. Typical applications include flyback and forward converters in LCD TV and monitor power supplies, server and telecom auxiliary power, LED lighting drivers, industrial SMPS, and solar micro-inverters. The CoolMOS P7 platform is particularly well suited to hard-switching PFC and LLC stages where the combination of low RDS(on), low Eoss, and integrated gate ESD simplifies the bill of materials. When designing with this device, pay attention to gate-drive voltage levels (the standard 10V VGS provides full RDS(on) spec), keep the source-sensing loop tight to leverage the Kelvin connection, and observe the safe operating area curve during start-up and short-circuit events. The PG-VSON-4 package's thermal performance depends critically on PCB copper area - a minimum of 1 square inch of 2-oz copper on the drain tab is recommended for typical 30-50W applications. This page consolidates distributor pricing, pin-compatible drop-in alternatives, and practical thermal/layout guidance not found in a single vendor listing, giving the design engineer an actionable decision framework for selecting, sourcing, and qualifying the IPL60R285P7AUMA1 in volume production.
IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon
The Infineon IPL65R070C7AUMA1 is a 650V N-channel CoolMOS C7 superjunction power MOSFET in a surface-mount PG-VSON-4 package, rated for 28A continuous drain current at 25°C case temperature and 169W power dissipation. It features an ultra-low typical on-resistance of 70 mΩ at 10V gate drive, making it one of the lowest RDS(on)/package combinations in the 650V superjunction class. The CoolMOS C7 generation targets high-efficiency switched-mode power supplies (SMPS), including PFC and LLC stages. A superjunction MOSFET is a power transistor that uses a deep-trench charge-balance structure to simultaneously achieve high blocking voltage and very low specific on-resistance, breaking the silicon limit of conventional planar MOSFETs. Within the power semiconductor taxonomy, superjunction MOSFETs sit between standard planar MOSFETs (typically <300V) and IGBTs (>600V high-current), enabling higher switching frequencies with lower conduction and switching losses than earlier generations. This makes them foundational building blocks for modern high-density AC-DC and DC-DC converters. Key differentiating features include the C7 series' reduced gate charge (Qg typically <30 nC) for faster switching, integrated snubberless body diode for hard-commutated bridge topologies, and a Kelvin-source PG-VSON-4 package that minimizes source-inductance-driven dynamic losses. These characteristics combine to deliver efficiency improvements of 0.5-1.5% across the full load range of telecom and server SMPS designs versus older CoolMOS generations. Typical applications include PFC boost stages in 1-3 kW server and telecom power supplies, LLC half-bridge primary-side switches in notebook adapters, solar inverters, EV charging auxiliary converters, and industrial SMPS. The combination of 650V rating, 70 mΩ RDS(on), and the thermally enhanced exposed-pad PG-VSON-4 package makes the IPL65R070C7AUMA1 particularly attractive for high-density, fan-less converter designs where board area and thermal performance are at a premium. When designing with this part, pay attention to the Kelvin-source connection to avoid dynamic RDS(on) penalties, keep gate-drive loops tight to control ringing, and ensure PCB copper area under the exposed pad supports the 169W dissipation rating with proper thermal via arrays.
IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon
The Infineon IPL65R115CFD7AUMA1 is a 650V N-channel power MOSFET from the CoolMOS™ CFD7 superjunction (SJ) family, rated for 24A continuous drain current (Tc) and 144W power dissipation in a surface-mount PG-VSON-4 package with an exposed thermal pad. Key headline parameters include a maximum drain-source voltage (VDS) of 650V, a typical on-state resistance (RDS(on)) of 115 mΩ at VGS=10V/ID=9.7A, and a low gate charge suited to high-frequency switching. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals in response to a gate-source voltage. The IPL65R115CFD7 belongs to the superjunction MOSFET category, which uses alternating P/N epitaxial layers to achieve a much lower RDS(on) × area figure of merit than planar MOSFETs at high blocking voltages. Within the broader taxonomy, it sits as: MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> discrete semiconductor. The CFD7 (Fast Body Diode) variant integrates an optimized intrinsic body diode for hard-commutated bridge topologies. Distinguishing features of this part include its integrated fast body diode with excellent reverse-recovery characteristics (low Qrr), low on-state resistance per silicon area, low gate charge (Qg) that minimizes driver losses, and a Kelvin-source capable PG-VSON-4 package that reduces source-inductance-driven switching losses. The 115 mΩ RDS(on) at full gate drive enables conduction losses under 2.7W at 15A continuous operation, while the 650V drain-source rating provides ample margin for 400V PFC boost, 500V telecom, and universal-input rectified bus rails. The CoolMOS CFD7 superjunction cell design uses charge-compensation structures to decouple the RDS(on)-BV trade-off that limits planar high-voltage MOSFETs. Compared with prior CoolMOS generations (CFD2/CFD3), the CFD7 family reduces switching losses, tightens RDS(on) distribution, and improves avalanche ruggedness. The integrated fast body diode eliminates the need for an external anti-parallel diode in bridge topologies, simplifying PCB layout and reducing bill-of-material cost. Typical applications include PFC boost stages in telecom/server SMPS, LLC and half-bridge resonant converters, solar inverters, EV onboard chargers, HID lighting ballasts, and industrial motor drives. The 650V rating suits universal-input (90-264VAC) designs where reflected bus voltages approach 400V DC. When designing with this MOSFET, ensure gate-drive voltage is at least 10V for full RDS(on) rating, place the gate driver within 5mm of the gate pin to minimize loop inductance, and verify that the heatsink thermal design keeps junction temperature below 150°C under worst-case SOA conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including cross-brand equivalents validated for pin-compatibility.
IPL65R130C7AUMA1 - 650V 15A 130mΩ CoolMOS C7 N-MOSFET | Infineon
The Infineon IPL65R130C7AUMA1 is a 650V, 15A N-channel superjunction power MOSFET from the CoolMOS™ C7 family, featuring an ultra-low on-resistance of 130 mΩ in a compact PG-VSON-4 surface-mount package. As part of Infineon's industrial-grade CoolMOS C7 series, this part combines best-in-class R DS(on)/package ratio with significantly reduced switching losses, enabling higher efficiency across the full load range. The 4-pin VSON footprint enables extremely compact power designs where traditional D²PAK or TO-220 packages would be too large. What is a CoolMOS C7 superjunction MOSFET? A superjunction MOSFET is a power transistor that uses a vertical alternating p-n column structure instead of the conventional planar or trench DMOS cell, dramatically lowering R DS(on) per unit silicon area. The C7 generation specifically targets hard- and soft-switching topologies in the 500V-950V class. Within the broader component hierarchy, a power MOSFET belongs to discrete semiconductors -> transistors -> MOSFETs, and it is the fundamental switching element in switch-mode power supplies (SMPS), power factor correction (PFC) stages, and motor drives. Key specifications include a continuous drain current of 15 A at 25°C case temperature, 102 W power dissipation, 650 V drain-source breakdown voltage, and an integrated body diode for inductive switching. The PG-VSON-4 package provides an exposed metal pad for top-side cooling and a typical thermal resistance of approximately 1.0 K/W junction-to-case. The MOSFET is rated for -40°C to +150°C junction temperature and is RoHS compliant with lead-free reflow profiles. Technically, the CoolMOS C7 architecture employs charge-compensated p-n columns that decouple the classical R DS(on) × BV trade-off, yielding 5-10× lower specific on-resistance than planar MOSFETs of the same voltage class. The technology minimizes output capacitance (C oss) and gate charge (Q G), which directly reduces switching energy losses (E on / E off) at high frequencies - critical for LLC resonant converters and totem-pole PFC stages where every milliohm counts. The C7 series is widely used as an upgrade path from older C3/C6 generations. Typical applications include server and telecom switched-mode power supplies (SMPS), power factor correction (PFC) front-end stages, industrial welding equipment, solar inverters, and high-frequency LLC resonant converters. The combination of 650V rating and 15A continuous current makes it suitable for 3-5 kW power conversion stages commonly found in server PSU 80 PLUS Titanium designs and industrial motor drives. When designing with this part, pay attention to gate driving - a 12V VGS with low-impedance gate drive (1-5Ω) is recommended to fully enhance the channel and minimize switching losses. PCB layout should minimize the power-loop and gate-loop inductance to suppress ringing; use Kelvin source connection if available in the chosen footprint variant. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon
The Infineon IPL65R200CFD7AUMA1 is a 650V N-channel power MOSFET in the CoolMOS CFD7 family, rated for 14A continuous drain current (Tc) and 81W power dissipation (Tc), housed in a surface-mount PG-VSON-4 package. It features an ultra-low typical on-resistance of 0.2 ohm at VGS=10V, ID=5.2A, with a 3.5V gate-threshold rating optimized for hard- and soft-switching topologies. The device uses Infineon's superjunction (SJ) technology to combine low RDS(on) with fast body-diode recovery, making it suitable for high-frequency switching converters. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-source voltage is applied. CoolMOS superjunction MOSFETs represent a specific class within the broader power MOSFET family, using vertical charge-balance structures to achieve lower on-resistance per unit area than conventional planar MOSFETs. The CFD7 (Fast-body-Diode, 7th generation) variant is further optimized for soft-switching and full-bridge/half-bridge topologies that see body-diode conduction. Key features include integrated gate-source ESD protection, low gate charge (Qg) for reduced driving losses, a 650V repetitive drain-source rating with high avalanche ruggedness, and a Kelvin-source pin configuration in PG-VSON-4 that minimizes source inductance. Compared with planar 600V MOSFETs of similar RDS(on), the CFD7 cuts switching losses by roughly 30-50%, enabling higher frequency operation in LLC, PFC, and phase-shifted full-bridge designs. The architecture combines a vertical superjunction drift region with a fast-recovery intrinsic body diode, allowing dead-time intervals as short as 100 ns without diode-recovery-induced dv/dt transients. The PG-VSON-4 package provides an exposed drain pad for direct PCB heatsinking and source-sense Kelvin lead that decouples gate-drive current from the power current path. Typical applications include telecom and server SMPS, solar inverters, EV on-board chargers and DC-DC stages, industrial motor drives, and HID/LED lighting PFC stages. The 650V rating also provides ample margin for 400V rectified-bus operation in three-phase industrial systems. When designing with this part, prioritize Kelvin-source PCB layout by tying the source-sense pin directly to the gate-driver ground return; the Kelvin connection must bypass the high-current source bondwire inductance. Also consider gate-drive voltage: 10V VGS is recommended for full RDS(on) rating, while 12V provides additional margin. This page synthesizes distributor pricing, drop-in CoolMOS CFD7 alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon
The Infineon IPL65R230C7AUMA1 is an N-channel 650 V CoolMOS C7 superjunction power MOSFET rated for 10 A continuous drain current (Tc) and 67 W power dissipation (Tc), housed in a surface-mount PG-VSON-4 package. It features a maximum drain-source on-resistance of 230 mOhm and is built on Infineon's CoolMOS C7 superjunction technology, which delivers the world's lowest RDS(on) per package combined with low switching losses across the full load range. A superjunction (SJ) MOSFET is a power-MOSFET architecture that uses alternating P- and N-doped epitaxial layers to break the silicon limit of conventional planar MOSFETs, simultaneously reducing on-resistance and gate charge. CoolMOS is the leading superjunction family, and the C7 generation specifically targets hard-switching topologies such as PFC and LLC converters in switch-mode power supplies (SMPS). CoolMOS parts sit within the broader power-semiconductor taxonomy: superjunction MOSFET -> MOSFET -> discrete power transistor -> discrete semiconductor. Key features of the IPL65R230C7AUMA1 include a 650 V drain-source breakdown voltage, a 230 mOhm maximum RDS(on) at 25 C, integrated ESD protection, a low gate charge (Qg) for reduced driver losses, and an operating junction temperature range of -55 C to +150 C. The PG-VSON-4 package has an exposed drain pad that doubles as the thermal interface, enabling low thermal resistance suitable for high-density SMD layouts. Technically, the C7 generation uses an optimized cell pitch and a refined field-plate structure that reduces both capacitive switching charge (Qgd) and output charge (Qoss). Compared with C6 and P6 predecessors, C7 lowers Eoss-related turn-on losses in resonant topologies and improves light-load efficiency in hard-switched converters. Typical applications include power-factor-correction (PFC) boost stages in SMPS, LLC half-bridge resonant converters, telecom rectifiers, server and workstation silver-box power supplies, solar inverters, and industrial welding equipment. Designers select this part when a 650 V breakdown margin is required for 400 V rectified-bus operation and when the 230 mOhm RDS(on) delivers acceptable conduction loss at the chosen switching frequency. When laying out the PCB, keep the gate-drive loop area (gate-driver IC, gate resistor, and MOSFET gate-source) minimal to avoid ringing, and place a small RC snubber across the drain-source if the layout is not optimal. Because the PG-VSON-4 drain pad is the main heatsinking path, an adequate copper area on the drain pad is essential for staying within the SOA at full load. This page synthesizes distributor pricing, parametric alternatives, and practical design notes for the IPL65R230C7AUMA1 that are not bundled together in the Infineon datasheet alone.
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
The Infineon IPLU300N04S41R1XTMA1 is a 40 V N-channel enhancement-mode automotive power MOSFET rated for 300 A continuous drain current (Tc) and 300 W power dissipation (Tc), packaged in the surface-mount PG-HSOF-8-1 (8-PowerSFN) form factor. It is characterized by an ultra-low R<sub>DS(on)</sub> of 1.15 mΩ at V<sub>GS</sub>=10 V and I<sub>D</sub>=100 A, gate charge of 151 nC at V<sub>GS</sub>=10 V, and input capacitance of 12,090 pF at V<sub>DS</sub>=25 V. What is an automotive power MOSFET? An automotive power MOSFET is a specialized N-channel enhancement-mode field-effect transistor designed and qualified to withstand the harsh electrical, thermal, and mechanical stresses of vehicle environments - including load-dump transients, wide temperature swings, and long-term vibration. It belongs to the broader semiconductor taxonomy of discrete transistor -> MOSFET -> power MOSFET -> automotive-grade MOSFET, and serves as the high-current switching element in 12 V/24 V vehicle electrical systems where efficiency, thermal robustness, and AEC-Q reliability are non-negotiable. Key features include AEC-Q qualification with peak reflow of 260°C and operating junction temperature of 175°C, RoHS-compliant lead-free construction, 100% avalanche-tested ruggedness, and a logic-level-compatible ±20 V gate-source rating. The PG-HSOF-8-1 package uses an exposed thermal pad that minimizes R<sub>thJC</sub> and enables direct PCB cooling without a discrete heatsink in many high-current loops. The integrated body diode simplifies half-bridge and OR-ing topologies by eliminating the need for an external freewheeling device in synchronous-rectification reverse-current paths. Architecturally, the IPLU300N04S4-1R1 cell uses Infineon's OptiMOS technology platform, which optimizes the silicon trade-off between R<sub>DS(on)</sub>, gate charge Q<sub>g</sub>, and output charge Q<sub>oss</sub> for high-current switching. The cell pitch and trench geometry are tuned for 12 V/24 V automotive bus rails, where the part delivers industry-leading figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for conduction and switching losses at 300 A peak. This makes the device particularly well-suited to high-frequency PWM-driven power converters used in mild-hybrid and electric-vehicle subsystems. Typical applications include 12 V/24 V automotive load switching and high-side drivers, electric power steering (EPS) controllers, battery management system (BMS) protection and disconnect switches, DC-DC converter high-side switches, and motor-drive half-bridges. The 300 A continuous rating supports high-current starter-generator and traction inverter auxiliary rails that must operate reliably at 175°C junction temperature throughout the vehicle lifetime. When designing with this part, prioritize low-inductance PCB layout - the PG-HSOF-8-1 source-connected thermal pad must be soldered to a continuous copper pour to extract heat. The ±20 V V<sub>GS</sub> rating requires a gate driver with controlled slew rate to prevent ringing and dv/dt-induced false turn-on in half-bridge topologies. Always derate continuous current to 50-60% of the datasheet maximum in sealed enclosures. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet, providing engineering decision support for procurement and PCB redesign workflows.
IPN50R2K0CEATMA1 - 500V CoolMOS CE N-FET, 2.4A, SOT-223 | Infineon
The Infineon IPN50R2K0CEATMA1 is a 500V N-channel CoolMOS CE power MOSFET rated at 3.6A continuous drain current (Tc) and 5W power dissipation, housed in a 3-pin PG-SOT223-3 surface-mount package. Built on Infineon's superjunction (SJ) CoolMOS CE platform, it delivers an ultra-low typical on-resistance of 2000 mOhm at VGS=10V in a footprint that is a cost-effective drop-in replacement for legacy DPAK designs. The part is targeted at cost-sensitive consumer and lighting markets where high efficiency is still required. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals when sufficient gate-source voltage is applied. CoolMOS CE sits in the broader taxonomy of superjunction MOSFET -> high-voltage MOSFET -> discrete power semiconductor, and is engineered specifically for 500V-class switch-mode power supply (SMPS) applications such as PFC, flyback converters, and LED drivers. By replacing conventional planar MOSFETs, superjunction technology dramatically reduces conduction and switching losses, enabling smaller magnetics and higher power density. Key specifications include a 500V drain-source breakdown voltage (VDS), 2000 mOhm maximum RDS(on) at VGS=10V, and an avalanche-rated drain current. The PG-SOT223-3 package provides a smaller board footprint than the industry-standard DPAK, while still offering adequate thermal performance through the tab (pin 4) connected to the drain. This makes the device well suited to compact adapters and auxiliary supplies. Typical applications include quasi-resonant flyback converters for smartphone chargers, LED lighting ballasts, auxiliary power supplies in white goods, and standby SMPS modules in TVs and set-top boxes. The wide safety margin between the 500V rating and typical 400V bus voltage supports reliable operation across universal-mains input (85-265VAC) designs with adequate derating. Designers should observe standard high-voltage layout practices: keep the drain trace short and wide, place the gate-drive resistor close to the gate pin, and provide sufficient creepage and clearance between the drain tab and adjacent low-voltage circuitry. The SOT-223 footprint enables direct substitution for DPAK in many designs where the thermal tab can be soldered to a small copper pour.
IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon
The Infineon IPN60R2K0PFD7SATMA1 is a 600 V N-channel superjunction (CoolMOS PFD7) power MOSFET in a surface-mount SOT-223 (PG-SOT223-3-1) package, rated for 3 A continuous drain current (Tc) and 6 W power dissipation (Tc), with a typical on-resistance of 2.0 Ohm at VGS = 10 V and a maximum RDS(on) of 1.626 Ohm. Designed as the consumer-grade complement to the CoolMOS 7 family, this part targets high-voltage, low-frequency switching applications where compact SMD packaging and high efficiency matter more than the lowest possible conduction loss. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern switched-mode power supplies (SMPS), motor drives, and solid-state relays. Superjunction MOSFETs such as the PFD7 series use a charge-compensated vertical structure that simultaneously shrinks the on-resistance per silicon area and reduces the figure-of-merit (RDS(on) x Qg) compared to conventional planar MOSFETs of the same voltage rating. Within Infineon's taxonomy, the IPN60R2K0PFD7S sits in the 600 V consumer / lighting / auxiliary supply branch, below industrial 800-950 V CoolMOS parts and above low-voltage (<200 V) OptiMOS devices. Key features include a 600 V drain-source breakdown voltage (V(BR)DSS), a logic-level-friendly 10 V gate drive (with ±20 V VGS absolute maximum), an integrated body diode optimized for hard-commutation, and a thermally-enhanced SOT-223 package with a central drain tab that doubles as the PCB heat-spreader pad. The 2 Ohm typical RDS(on) keeps conduction losses low enough for 1-2 A continuous flyback or buck operation without an external heatsink on a 1 square-inch copper pour. Architecturally, the device uses Infineon's PFD7 superjunction cell pitch combined with a low-loss body diode, enabling both high dV/dt immunity and reduced reverse-recovery charge (Qrr) relative to older P6/CFD series. This makes it well suited to CCM PFC and QR/FFP flyback stages where diode recovery losses otherwise dominate at light load. Typical applications include LED lighting driver stages, auxiliary and standby SMPS in white goods and TVs, e-bike and power-tool chargers, and solid-state relay modules. The SOT-223 package enables automated optical-inspection assembly and replaces through-hole TO-220 or ITO-220 parts in space-constrained designs. When designing with this part, pay attention to creepage and clearance on the SOT-223 drain tab at 600 V stress - keep the drain copper away from low-voltage signal traces and consider a slot in the PCB under the tab if clearance drops below 1.5 mm at 1.0 mm pollution degree. For continuous current above 1 A, derate using the package SOA curve rather than the Tc rating alone. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPN60R360P7SATMA1 - 600V 360mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPN60R360P7SATMA1 is a 600 V N-channel CoolMOS P7 superjunction (SJ) power MOSFET rated for 9 A continuous drain current and 360 mΩ on-resistance in a surface-mount PG-SOT223 package. It combines excellent switching performance and ease-of-use for low-power switched-mode power supply (SMPS) designs. Key headline parameters include 600 V VDS, 360 mΩ RDS(on), 9 A ID at TC, and 7 W power dissipation at TC. A superjunction MOSFET is a class of high-voltage power MOSFET that uses a deep-trench charge-balance structure to deliver much lower on-resistance per area and lower switching losses than conventional planar MOSFETs at the same voltage rating. The CoolMOS P7 family sits within the broader power MOSFET taxonomy as: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7. This technology is essential in modern SMPS where efficiency, thermal density, and EMI compliance must be balanced in compact form factors. Key features include an integrated ESD protection cell, a low gate charge QG (typ. around 14 nC), fast body-diode reverse recovery suitable for hard-switching topologies, and an optimized body diode for reduced ringing in bridge configurations. The P7 generation targets ease-of-use with high dv/dt ruggedness, a wide SOA, and simple gate-drive requirements that allow designers to omit complex gate-drive circuitry. The CoolMOS P7 architecture uses the latest charge-balance trench technology, achieving the industry's lowest RDS(on)*area figure-of-merit at 600 V. The 360 mΩ on-resistance variant is optimized for sub-100 W flyback and quasi-resonant topologies where moderate conduction losses and excellent switching performance are required. The integrated Zener-protected gate and source-pin connection improve robustness against VGS transients during production and field operation. Typical applications include low-power SMPS adapters (USB-PD chargers, notebook adapters under 65 W), LED lighting drivers, auxiliary supplies in white goods, and standby/auxiliary rails in telecom equipment. The 600 V rating provides ample margin for 3-phase input rectified PFC front ends and for 230 V AC line-rectified flyback primary-side switches. When designing with this part, place the gate-drive resistor close to the gate pin, use a Kelvin source connection when possible, and ensure the heatsink thermal resistance (junction-to-ambient) keeps TJ below 150°C at full load with the worst-case ambient temperature. This PG-SOT223 footprint also enables drop-in replacement in designs originally built around DPAK alternatives with proper land-pattern review. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for IPN60R360P7SATMA1 that are not directly assembled on the manufacturer datasheet alone.
IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon
The Infineon IPN70R1K4P7SATMA1 is a 700 V, 4 A N-channel CoolMOS P7 superjunction (SJ) power MOSFET in a 3-pin PG-SOT223 surface-mount package, optimized for low-power switched-mode power supply (SMPS) designs. It combines the fast-switching benefits of Infineon's latest superjunction technology with an excellent price/performance ratio and high ease-of-use, enabling improved form factors, slimmer adapters, and lower BOM cost in consumer and industrial AC-DC converters. Background: A superjunction MOSFET is a type of power MOSFET that uses a deep p-n column structure to break the traditional silicon limit between on-resistance (RDS(on)) and breakdown voltage (BV). Within the broader power-semiconductor taxonomy, the CoolMOS P7 family belongs to high-voltage power MOSFETs -> discrete MOSFETs -> discrete semiconductors. The P7 series is engineered specifically for low-power SMPS markets where designers want higher efficiency, higher power density, and easier EMI compliance than prior-generation high-voltage MOSFETs could deliver. Key specifications include a 700 V drain-source breakdown voltage (V(BR)DSS), a continuous drain current of 4 A at TC, pulsed drain current capability, and a typical on-resistance in the 1.4 ohm class (denoted by the "1K4" Rds(on) code). The PG-SOT223 package offers thermal performance comparable to a DPAK footprint while saving PCB area, and the device supports avalanche ruggedness and an integrated body diode for hard-commutated switching topologies. Architecturally, the CoolMOS P7 cell integrates a charge-compensation structure that slashes Rds(on) per unit area versus conventional planar MOSFETs, while integrated gate-source ESD protection and a tightly controlled gate threshold reduce driver design effort. The result is a part that switches cleanly at high dV/dt, supports high-frequency operation, and eases EMI filter design in quasi-resonant and valley-switching flyback converters. Typical applications include smartphone and tablet travel adapters, auxiliary power supplies for white goods and desktop PCs, LED lighting drivers, and industrial SMPS modules. The 700 V rating provides ample derating margin for 230 V mains rectified bus voltages and supports repetitive avalanche events in transformer-reset topologies. The PG-SOT223 footprint also enables direct PCB replacement of legacy DPAK MOSFETs where board space is constrained. Design tip: Because the SOT-223 tab is the drain, the copper pad on the PCB acts as the heatsink. Provide at least 1 cm2 of 2 oz copper pour on the drain tab land pattern to keep junction temperature within safe limits at full 4 A load, and keep the high-dV/dt drain loop area minimal to limit radiated EMI. Unique value: This page synthesizes distributor stock data, drop-in CoolMOS P7 alternatives in the same PG-SOT223 footprint, and practical PCB layout guidance not found in the bare manufacturer datasheet.