MOSFETs
Produtos (1294)
IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon
Infineon IPD80R280P7ATMA1 is an N-channel 800V CoolMOS P7 superjunction power MOSFET rated 280 mOhm R_DS(on) and 17 A continuous drain current (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package with 101 W (Tc) power dissipation. It is part of Infineon's industrial CoolMOS P7 family, which combines best-in-class switching performance with ease-of-use for high-voltage SMPS designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and condition power in DC-DC converters, AC-DC power supplies, motor drives, and load management circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors and subdivide into N-channel and P-channel, enhancement-mode and depletion-mode, with superjunction (a.k.a. CoolMOS) devices representing the high-voltage-optimized branch that combines low R_DS(on) with low switching losses. Key differentiating specifications include 800V drain-source breakdown voltage, a typical R_DS(on) of 280 mOhm at V_GS=10V, integrated ESD protection diode, and a dv/dt ruggedness profile suited to hard-switched PFC and flyback topologies. The P7 generation reduces gate charge (Q_G) and output capacitance (C_oss) versus the prior P6 series, which directly lowers switching losses in high-frequency SMPS stages. The CoolMOS P7 superjunction architecture replaces the conventional planar DMOS cell with a vertical column of alternating p-n layers, dramatically shrinking on-resistance per unit area while preserving high blocking voltage. This makes the IPD80R280P7ATMA1 a strong fit where thermal headroom, conduction loss, and ease of driving must be balanced against cost. Typical applications include PFC boost stages in 600-800V class switch-mode power supplies, LLC and flyback primary switches in LED drivers and TV power, industrial SMPS for factory automation, solar inverter auxiliary rails, and 380-400V motor drive half-bridges. The PG-TO252-3 footprint is also widely accepted as a drop-in DPAK land pattern. When designing with this part, observe the SOA in the manufacturer datasheet, keep the gate-drive loop tight to suppress ringing, and choose a TVS across drain-source when the application stresses inductive turn-off. Below-source-threshold V_GS must be respected to avoid parasitic turn-on in half-bridge layouts. This page consolidates Infineon datasheet specifications, current distributor pricing from DigiKey and Mouser, drop-in alternatives in PG-TO252-3, and practical design notes not always visible on catalog listings.
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
The Infineon IPD80R2K4P7ATMA1 is an 800V N-channel CoolMOS P7 superjunction power MOSFET rated at 2.5A continuous drain current (Tc) and 22W power dissipation, housed in a surface-mount PG-TO252-3 (DPAK) package. It delivers a maximum on-resistance of 2000 mOhm at VGS = 10V, providing best-in-class efficiency and thermal performance for low-power switched-mode power supply designs. A superjunction MOSFET (also called CoolMOS) is a high-voltage power MOSFET that uses alternating P/N epitaxial layers to break the classic silicon limit of R_DS(on) x area for a given breakdown voltage. In the broader taxonomy, this places the IPD80R2K4P7ATMA1 within the discrete semiconductor > MOSFETs > high-voltage superjunction MOSFETs > power-switching transistors family. The CoolMOS P7 generation specifically targets low-to-medium power SMPS applications where designers need 800V avalanche ruggedness without sacrificing ease of use. Key features include a 10V gate-drive optimization for standard MOSFET gate drivers, integrated gate-protection Zener diodes, low gate charge for fast switching transitions, and a dv/dt ruggedness that allows operation directly from rectified 230V/400V AC mains. The P7 series combines best-in-class figure-of-merit with state-of-the-art ease-of-use, leveraging Infineon's 18+ years of superjunction technology innovation. The internal architecture uses a deep-trench superjunction cell design that reduces conduction and switching losses simultaneously, achieving a figure-of-merit (FOM = RDS(on) x QG) that is competitive with the latest industry offerings. Compared to the previous CoolMOS P6 series, the P7 typically offers lower QG at the same RDS(on), making it well-suited to high-frequency quasi-resonant flyback and LLC topologies. Typical applications include low-power SMPS adapters, auxiliary power supplies for white goods and industrial equipment, LED lighting drivers, e-bike and power tool chargers, and standby/auxiliary rails in major appliances. Its 800V breakdown rating provides ample margin for 230V AC rectified bus operation. When designing with this device, ensure the gate-drive voltage reaches the fully-enhanced region (10V typical) and that snubber circuits are tuned to control drain-voltage overshoot below the 800V rating. Thermal design should target a junction temperature below 125C under worst-case continuous load.
IPD80R600P7ATMA1 - 800V 600mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPD80R600P7ATMA1 is an N-channel 800V CoolMOS P7 power MOSFET in a PG-TO252-3 (DPAK) surface-mount package, rated for 8A continuous drain current (Tc) and 60W maximum power dissipation. It combines Infineon's 800V super-junction technology with a typical on-resistance of 600 mΩ, targeting industrial switch-mode power supplies where low conduction loss and high-voltage robustness are required. What is a CoolMOS P7 power MOSFET? CoolMOS is Infineon's super-junction MOSFET technology, a power-semiconductor architecture that stacks alternating P/N epitaxial layers to dramatically shrink on-resistance per unit area at high blocking voltages. P7 is the seventh-generation CoolMOS family, optimized for ease-of-use, fast switching, low gate charge, and integrated protection features that simplify LLC, flyback, and PFC converter designs. Key features include 800V drain-source breakdown voltage (V(BR)DSS), 600 mΩ maximum RDS(on) at VGS=10V, integrated gate-source ESD protection, and very low gate charge (Qg) for reduced driver losses. The device supports continuous drain current of 8A at case temperature and pulsed drain current of 22A, allowing it to handle inrush and transient overload conditions common in power-conversion circuits. The CoolMOS P7 architecture delivers ultra-low specific on-resistance, integrated Zener-protected gate, and rugged body-diode behavior for hard-switching topologies. With a gate threshold of approximately 3V and a maximum gate-source rating of ±30V, the part is straightforward to drive from standard gate-driver ICs while remaining tolerant to supply transients in 230V/400V mains environments. Typical applications include SMPS (switch-mode power supplies), PFC boost stages, flyback and forward converters, LED lighting drivers, industrial auxiliary supplies, and e-mobility chargers. The 800V rating provides substantial margin over 230VAC rectified peaks (~373V), supporting reliable operation across universal-input designs. When designing with this MOSFET, ensure the gate-drive voltage is at least 10V to achieve the lowest RDS(on), and keep stray source inductance low by minimizing the gate-driver loop area. Always check the avalanche rating (EAS) and use proper heatsinking to keep junction temperature below 150°C for long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
IPD80R750P7ATMA1 - 800V CoolMOS P7 MOSFET, 7A | Infineon
The Infineon IPD80R750P7ATMA1 is an 800V N-channel CoolMOS P7 super-junction power MOSFET delivering 7A continuous drain current and 750 mOhm maximum on-resistance, housed in a surface-mount PG-TO252-3 (DPAK) package. The CoolMOS P7 platform combines Infineon's over 18 years of super-junction (SJ) technology innovation with a new benchmark in 800V performance, achieving best-in-class figure-of-merit (RDS(on) x Qg) and integrated gate protection. The IPD80R750P7ATMA1 ships in tape-and-reel (ATMA1 suffix) for high-volume SMT manufacturing. What is a super-junction MOSFET? A super-junction MOSFET is a power-MOSFET architecture that uses alternating P/N drift-region columns to break the traditional silicon limit of high-voltage MOSFETs. Unlike standard planar MOSFETs, the SJ design (popularized by Infineon as CoolMOS) achieves much lower RDS(on) per unit area at 500-950V ratings. The hierarchy is: MOSFET -> power MOSFET -> super-junction MOSFET -> power management discrete. CoolMOS P7 specifically targets low-power SMPS, LED drivers, and auxiliary power applications. Key features include 800V drain-source breakdown voltage, 750 mOhm max RDS(on) at VGS=10V, integrated Zener-protected gate, low gate charge (Qg), and fast body diode. The P7 family improves on earlier P6 and C6 series with a 30% lower RDS(on) and significantly reduced switching losses. The integrated gate-source Zener clamps ESD and prevents over-voltage gate failure, eliminating the need for external gate protection in most designs. From an architecture perspective, the IPD80R750P7 uses Infineon's latest 800V super-junction cell design with trench-filling epitaxial layers, reducing specific on-resistance (RDS(on)*Area) by approximately 40% versus the previous generation. The integrated gate Zener (typical clamping voltage 13-15V) provides ESD protection per HBM Class 2 and allows direct gate drive from standard 12V gate drivers without external protection networks. Typical applications include AC-DC flyback converters, LED lighting drivers, auxiliary power supplies in white goods, industrial SMPS, and e-meter power stages. The 800V rating provides ample margin for universal-input (85-265VAC) rectified bus voltages up to 375V DC. The PG-TO252-3 (DPAK) package offers a thermally efficient surface-mount footprint with a tab that can be soldered directly to a copper pour for heat dissipation. When designing with this part, consider the gate drive requirements: 10V VGS is required for full RDS(on) specification, and the integrated Zener clamps at approximately 15V. For hard-switched topologies above 50kHz, careful gate-loop layout and a small RC snubber may be required to limit dV/dt-induced ringing. The PG-TO252-3 package dissipates up to 51W at TC=25C with infinite heatsink. This page synthesizes distributor pricing, drop-in alternatives from the Infineon CoolMOS family, and practical design notes that go beyond what appears in the manufacturer datasheet.
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
The Infineon IPD90N03S4L02ATMA1 is an N-channel enhancement-mode OptiMOS-T2 power MOSFET rated at 30 V VDS, 90 A continuous drain current at Tc, and 136 W power dissipation, housed in a surface-mount PG-TO252-3-11 (DPAK) package. Built on Infineon's OptiMOS-T2 trench process, it delivers a typical on-state resistance of 2.2 mΩ at VGS=10 V and combines low switching losses with 100% avalanche-tested robustness for high-efficiency synchronous rectification, motor control, and automotive PWM stages. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that uses a gate oxide to modulate a conductive channel between source and drain. In the OptiMOS-T2 family, an N-channel trench-gate cell shrinks the R_DS(on) x area figure of merit, falling under the broader power MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor. This places the part firmly inside Infineon's automotive-grade discrete semiconductor portfolio optimized for 12 V/24 V vehicle bus systems. Key features include a 2.2 mΩ maximum R_DS(on) at VGS=10 V, 4.5 V to 10 V gate-drive compatibility for direct MCU/PWM control, and an operating junction range up to 175°C. The device is AEC-Q101 qualified, MSL1 rated for up to 260°C peak reflow, and shipped in a Green Package that is RoHS compliant. Per datasheet, the part is 100% avalanche tested, providing proven ruggedness for unclamped inductive switching events common in motor windings and solenoid loads. The OptiMOS-T2 cell architecture uses a vertical trench with a split-gate structure that reduces gate charge (Qg) and Miller capacitance (Cgd) versus the prior OptiMOS generation. This lowers switching energy at high PWM frequencies (50-300 kHz), enabling smaller magnetics in synchronous buck converters and reduced dead-time loss in half-bridges. The 175°C junction rating also sustains continuous high-current operation in sealed under-hood enclosures. Typical applications include automotive electronic power steering (EPS), brushed DC and BLDC motor drives, LED driving and headlamp load management, DC-DC synchronous buck and synchronous rectification stages, battery protection and hot-swap circuits, and industrial solenoid/relay drivers. The wide safety margin between 90 A continuous rating and typical 30-40 A application currents supports robust inrush handling. When designing with this part, derate continuous drain current to roughly 60-70 A in a real PCB layout with limited copper pour, and verify gate-drive strength to fully enhance the channel (VGS ≥ 10 V recommended). The exposed tab on the PG-TO252-3-11 package must be soldered to a thermal pad of at least 1 sq. in. copper for full 136 W dissipation capability. This page consolidates distributor pricing, parametric drop-in alternatives, and practical PCB-thermal design notes that go beyond the manufacturer datasheet to give automotive and industrial design engineers a faster, more confident selection workflow.
IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon
The Infineon IPD90N04S403ATMA1 is an N-channel enhancement-mode power MOSFET rated at 40 V drain-source voltage and 90 A continuous drain current (Tc), built on Infineon's OptiMOS-T2 technology and housed in a surface-mount PG-TO252-3-313 (DPAK) package. It delivers a typical on-state resistance of 3.2 mOhm at 10 V VGS and a maximum power dissipation of 94 W at 25 degC case temperature, targeting high-current 12 V and 24 V automotive and industrial switching stages. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source. The OptiMOS-T2 family sits within the broader hierarchy: MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Optimised trench MOSFET structures reduce R_DS(on) per unit silicon area, which directly lowers conduction losses and shrinks the PCB footprint required for a given current rating. Key features of the IPD90N04S403ATMA1 include 3.2 mOhm typical R_DS(on) at V_GS = 10 V, AEC-Q101 automotive qualification, MSL1 rating allowing peak reflow up to 260 degC, 100% avalanche-tested die, and an operating junction temperature up to 175 degC. The PG-TO252-3-313 (DPAK) package provides a low thermal-resistance path through the tab and a small board footprint compatible with high-volume SMT assembly. The trench cell architecture of OptiMOS-T2 reduces gate charge (Qg) and output capacitance (Coss), which lowers switching losses at high PWM frequencies. Combined with the 3.2 mOhm R_DS(on), this allows cooler operation, smaller heatsinks, and higher system efficiency compared with older planar MOSFET generations at similar current ratings. Typical applications include automotive 12 V brushless DC motor drives, electronic power steering (EPS), electric water/oil pumps, solenoid drivers, and 24 V industrial switching. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis electronics subject to extended temperature and vibration stress. Designers should note that for high-side switching above 10 kHz, a gate driver with sufficient sink/source current is required to charge and discharge the MOSFET's input capacitance quickly. Place the gate resistor close to the IC pin and use a Kelvin source connection where the layout permits to minimise switching-loop inductance. This page synthesises distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical design notes that go beyond what is published in the Infineon datasheet alone, giving engineers a single reference for sourcing and design-in decisions.
IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon
The Infineon IPD90N06S404ATMA2 is an N-channel enhancement-mode power MOSFET built on Infineon's OptiMOS technology platform, rated at 60 V drain-source voltage and 90 A continuous drain current (Tc) with 150 W power dissipation, housed in a 3-pin surface-mount PG-TO252-3-11 (DPAK) package. It is AEC-Q101 qualified for automotive use and offers the world's lowest RDS(on) at 60 V according to the manufacturer, with a typical on-resistance of 3.8 mΩ. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to handle high currents and voltages in power-conversion circuits. MOSFETs are a subclass of field-effect transistors within discrete semiconductors, occupying a hierarchy of: power MOSFET -> MOSFET -> FET -> transistor -> discrete semiconductor. They are the workhorse building blocks of switching power supplies, motor drives, and automotive electronic control units (ECUs). Key features of the IPD90N06S404ATMA2 include 100% avalanche-tested ruggedness, MSL1 rating up to 260 °C peak reflow, 175 °C maximum operating temperature, and Green Product (RoHS-compliant) construction. The device is engineered for the lowest switching and conduction power losses in its class, enabling highest thermal efficiency in 12 V automotive and 24 V industrial bus systems. Technically, the part uses Infineon's OptiMOS silicon process, which minimizes gate charge (Qg) and figure-of-merit (FOM = RDS(on) × Qg) for high-frequency switching. The 3.8 mΩ on-resistance at VGS = 10 V keeps conduction losses low in high-current paths such as ABS modules, electronic power steering, and DC-DC converter high-side switches. Typical applications include automotive 12 V powertrain systems (H-bridge motor drives, solenoid switching), 48 V mild-hybrid DC-DC stages, industrial switching power supplies, battery management system (BMS) protection circuits, and high-current OR-ing. The automotive-grade qualification makes it suitable for under-hood environments with sustained high junction temperatures. Designers should select a low-ESR gate driver capable of sourcing/sinking >1 A peak to switch the device quickly and avoid linear-region heating. A 10 Ω gate resistor is typical to dampen parasitic ringing, and a Kelvin-source PCB layout is recommended when very low RDS(on) is required at high current. This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, and automotive-layout design notes that complement the manufacturer datasheet.
IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon
The Infineon IPD90N06S407ATMA2 is an N-channel enhancement-mode power MOSFET rated at 60 V VDS and 90 A continuous drain current (TC), housed in a surface-mount PG-TO252-3-11 (DPAK) package. Its headline figures are 6.9 mOhm R_DS(on) at V_GS=10 V / I_D=90 A, 79 W maximum power dissipation (TC), and a 56 nC typical gate charge at V_GS=10 V, making it one of the lowest on-resistance 60 V trench MOSFETs in the DPAK footprint. What is an N-channel power MOSFET? An N-channel power MOSFET is a voltage-controlled majority-carrier switch whose conduction between drain and source is modulated by the gate-to-source voltage. It belongs to the discrete-semiconductor hierarchy: power MOSFET -> MOSFET -> transistor -> discrete semiconductor. Because the majority carrier is the electron, N-channel devices typically achieve lower R_DS(on) per unit silicon area than equivalent P-channel MOSFETs, which is why the IPD90N06S407ATMA2 can deliver 90 A with only 6.9 mOhm on-state loss. The OptiMOS family that this part belongs to is optimised for low R_DS(on) and high-current switching. Key features include 100% avalanche-tested ruggedness, AEC-Q101 automotive qualification, MSL1 moisture sensitivity up to 260 C peak reflow, and an operating junction-temperature range of -55 C to +175 C. The standard gate-threshold of 4 V at 40 uA simplifies logic-level driving, and the +20 V absolute maximum V_GS rating protects against typical gate-driver transients. RoHS-compliant Green-Product construction supports automotive and industrial designs subject to REACH and conflict-mineral reporting. The device uses Infineon's advanced trench-cell architecture, which minimises cell pitch while maximising channel width per die area. The 56 nC typical Q_G at 10 V indicates a moderate gate-charge budget, allowing switching frequencies of 100 kHz to 500 kHz in SMPS and motor-drive applications without exceeding the gate-driver's source/sink current capability. Ultra-low R_DS(on) at 60 V reduces conduction loss in high-current loops. Typical applications include automotive 12 V/24 V high-current switching, H-bridge motor drivers, DC-DC converter synchronous-rectifier stages, electronic power-steering (EPS) and braking systems, and industrial solenoid/relay drivers. The combination of high current, low on-resistance and AEC-Q101 qualification makes it well suited to body-electronics and chassis ECUs. When designing with this part, ensure the drain tab/PCB copper area is sized for the 79 W thermal budget (R_thJC low, but R_thJA depends on PCB footprint) and that the gate-drive voltage reaches 10 V for full R_DS(on) enhancement. A gate-source resistor of 10 kOhm to 100 kOhm prevents floating-gate turn-on during high dV/dt transients. This page synthesises distributor pricing as of 2026-09-13, drop-in alternatives in the same DPAK footprint, and practical design notes that complement the manufacturer datasheet for cross-brand selection and BOM-risk mitigation.
IPD90N10S406ATMA1 - 100V 90A N-Channel MOSFET | Infineon
The Infineon IPD90N10S406ATMA1 is an N-channel, normal-level, enhancement-mode power MOSFET rated at 100 V drain-source breakdown voltage and 90 A continuous drain current (at Tc), dissipating up to 136 W in a PG-TO252-3-313 (DPAK) surface-mount package. It belongs to Infineon's OptiMOS family of trench MOSFETs designed for high-efficiency switching applications. The device is qualified to AEC-Q101 standards for automotive use, supports MSL1 up to 260 °C peak reflow, and operates across a -55 °C to +175 °C junction temperature range. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. Within the broader semiconductor taxonomy it sits at the level of discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> trench MOSFET. The "normal level" gate drive (10 V Vgs) and 100 V rating place this part in the mid-voltage switching tier, well above small-signal MOSFETs but below the high-voltage superjunction class used in PFC stages. Key differentiating specifications include an ultra-low typical on-resistance Rds(on) optimized for 10 V Vgs drive, 100% avalanche-tested ruggedness with a rated avalanche energy of 250 mJ, and an integrated body diode that simplifies half-bridge and synchronous-rectifier designs. The PG-TO252-3-313 DPAK package provides a low thermal-resistance path from the silicon die to the PCB drain tab, enabling high continuous current handling at moderate switching frequencies. Architecturally, the part uses Infineon's planar-trench cell design to balance Rds(on) per area against gate charge Qg, minimizing conduction and switching losses simultaneously. The combination of low gate charge, low Rds(on), and 100 V BVDSS makes it a strong fit for 12 V and 24 V automotive / industrial rails where efficiency and thermal headroom dominate the design trade-off. Typical applications include automotive 12 V and 24 V motor control (DC fans, pumps, EPS, seat adjusters), industrial relay and solenoid drivers, synchronous rectification in secondary-side SMPS, battery management system (BMS) protection switches, and DC-DC buck/boost converter high-side and low-side switches. When designing in this part, pay attention to gate-drive voltage transients, PCB drain-tab copper area for heatsinking, and avalanche energy budgeting in inductive-load applications such as motor windings and solenoid valves. This page synthesizes distributor pricing, drop-in alternatives drawn from same-brand and cross-brand sources, and practical design notes not found in the manufacturer datasheet alone - giving engineers a single decision-ready reference.
IPD90P03P404ATMA2 - 30V P-Ch 90A 4.5mΩ MOSFET | Infineon
The Infineon IPD90P03P404ATMA2 is an automotive-grade P-channel power MOSFET rated at -30V VDS, -90A continuous drain current (at TC), and a typical on-state resistance of 4.5 mΩ (10V VGS), housed in a 3-pin PG-TO252-3-11 (DPAK) surface-mount package. The device is part of Infineon's OptiMOS P-channel family designed for high-side load switching in 12V automotive and industrial systems. A P-channel MOSFET (P-FET) is a voltage-controlled power transistor in which the channel is composed of p-type semiconductor material. Because the source is connected toward the load supply and the device turns on by pulling the gate below the source, a P-channel MOSFET simplifies high-side switching in systems where an N-channel alternative would require a charge pump or bootstrap circuit. In the broader taxonomy it sits within: discrete semiconductor -> MOSFET -> power MOSFET -> P-channel enhancement-mode MOSFET -> automotive-grade power MOSFET. Key specifications include -30V drain-source breakdown voltage (V(BR)DSS), -90A continuous drain current at TC, 4.5 mΩ typical R DS(on) at VGS = -10V, ±20V gate-source voltage rating, total gate charge (Qg) of 130 nC at 10V, and an input capacitance (Ciss) of approximately 10300 pF at 25V. The 137W power dissipation rating (at TC) and AEC-Q101 automotive qualification make the part suitable for harsh under-hood and chassis environments. The IPD90P03P404ATMA2 uses Infineon's OptiMOS trench technology, which minimizes R DS(on) per unit silicon area and reduces switching losses through low Qg and Qgd. The very low 4.5 mΩ R DS(on) translates into conduction losses under 1W at 50A load, allowing smaller PCB copper areas and reducing thermal stress on adjacent components. The 175°C maximum junction temperature provides additional thermal margin in space-constrained layouts. Typical applications include automotive high-side load switching for halogen or LED lamps, body-control modules (BCMs), HVAC blower motors, and reverse-polarity protection circuits where the P-channel sits between the battery and the load. It is also used in industrial 24V/12V hot-swap controllers, eMobility auxiliary supplies, and USB-PD VBUS protection switches. When designing with this part, place it on a sufficiently large drain copper pour (the tab is internally connected to the drain) to keep RθJA within the application thermal budget. Because the part is P-channel, the gate drive is referenced to the source (typically the battery rail); a small gate pull-up resistor to the source keeps the device off during power-up and prevents accidental turn-on from gate leakage. This page synthesizes distributor pricing, drop-in cross-brand alternatives and application design notes that are not consolidated in the Infineon datasheet, providing engineers with a single source for sourcing, replacement and layout decisions.
IPD90P04P405ATMA2 - P-Channel 40V 90A OptiMOS MOSFET | Infineon
The Infineon IPD90P04P405ATMA2 is a P-Channel OptiMOS power MOSFET rated at -40 V VDS, -90 A continuous drain current (Tc) and 125 W power dissipation (Tc), housed in a surface-mount PG-TO252-3-313 (DPAK) package with an on-resistance of 4.7 mΩ typical. Designed for high-side bridge and high-current switching tasks, it combines low conduction loss with the ruggedness expected of Infineon's automotive-grade OptiMOS-P family. What is a P-Channel MOSFET? A P-Channel MOSFET is a metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons, allowing it to turn ON when the gate is pulled below the source. In circuit terms it sits within the broader power-MOSFET hierarchy (power MOSFET → P-Channel variant → high-side/low-side switch → power management semiconductor) and is frequently selected for high-side switching because it can be driven directly by a low-side gate driver without a charge pump. Key features include the ultra-low 4.7 mΩ RDS(on) at VGS = -10 V, a logic-level friendly threshold range, avalanche-rated single-pulse robustness, and a low thermal resistance path through the DPAK tab. The OptiMOS-P2 process technology minimizes gate charge (Qg) and output capacitance (Coss) for fast switching edges and reduced driver loss. At the architecture level the device uses Infineon's trench-field-plate OptiMOS cell which shrinks die size per ampere, slashes Miller charge, and improves the FoM (RDS(on) × Qg). The result is a part that competes effectively with N-channel alternatives in 12 V and 24 V automotive systems where a high-side P-channel switch simplifies PCB layout and reduces bill-of-materials cost. Typical applications include reverse-polarity protection, high-side load switches, DC motor drive H-bridges, USB-PD and battery management switches, and 12 V/24 V automotive body electronics such as ECU power rails and LED driver stages. When designing with this part, observe the SOA curve carefully under pulsed loads, keep the gate drive below -20 V absolute, and provide adequate copper area on the DPAK tab to stay within the junction temperature rating during continuous high-current operation. This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical design notes not found in the standalone Infineon datasheet, giving engineers a faster path from selection to validated BOM.
IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon
The Infineon IPD90P04P4L04ATMA2 is a -40 V P-channel OptiMOS-P2 power MOSFET in a 3-pin PG-TO252-3-313 (DPAK) surface-mount package, rated for -90 A continuous drain current (Tc) and 125 W power dissipation (Tc). Built on Infineon's OptiMOS-P2 trench technology, it achieves an ultra-low on-state resistance of 4.3 mOhm (typical) at -10 V Vgs, optimized for high-side switch and load-switch applications where conduction losses dominate. A P-channel MOSFET is a type of field-effect transistor in which the body and source/drain regions are arranged so that, when the gate is pulled below the source potential, a P-type conduction channel forms between source and drain. P-channel devices are commonly used as high-side switches because they can be turned on by a gate voltage that is referenced to ground (rather than to the load), simplifying gate drive circuitry in 12 V automotive and industrial systems. The OptiMOS-P2 family specifically targets ultra-low Rds(on) per package millimeter-squared. Key specifications include a -40 V Vds rating (with avalanche ruggedness), -90 A continuous drain current at 25 C case temperature, 4.3 mOhm typical Rds(on) at Vgs = -10 V, a typical gate threshold of -2 V, and a maximum junction temperature of 175 C. The PG-TO252-3-313 package provides a low thermal resistance path (~0.6 C/W junction-to-case) that supports the 125 W power dissipation rating when mounted on a sufficient copper area. The OptiMOS-P2 trench cell architecture minimizes both conduction and switching losses while maintaining strong avalanche capability. Compared to older P-channel generations, this part delivers roughly a 35-50% lower Rds(on) at the same die size, which translates directly into lower I²R losses in high-current 12 V/24 V automotive load paths. Typical applications include automotive high-side switching for ECUs, body-control modules, LED lighting drivers, reverse-polarity protection, battery isolation switches, and 12 V/24 V industrial load management. The -40 V Vds rating also covers 24 V industrial bus transient spikes up to ~36 V. When designing with this part, ensure the gate is pulled cleanly below the source by at least 10 V for full enhancement, and keep the gate-source loop physically short to avoid parasitic turn-on from drain voltage transients (the classic 'dv/dt induced turn-on' pitfall of high-side P-channel switches). This page synthesizes distributor pricing, parametric drop-in alternatives, and practical high-side-switching design guidance not consolidated on any single manufacturer or distributor page.
IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon
The Infineon IPG16N10S461AATMA1 is an OptiMOS™ power MOSFET array integrating two N-channel enhancement-mode transistors in a single 100V-rated silicon die, housed in a PG-TDSON-8-10 (Wettable Flank) surface-mount package. Each transistor is rated for 100V VDS, 16A continuous drain current, and exhibits a typical on-resistance of 61 mΩ (max R_DS(on) per die). The total package power dissipation is rated at 29W at T_C = 25°C with a maximum junction temperature of 175°C. What is a dual MOSFET array? A dual MOSFET array is a discrete-semiconductor component that places two independent MOSFETs (often in half-bridge or dual-N topology) inside one package, allowing the designer to halve PCB area, shorten the high-current loop, and reduce parasitic inductance versus two discrete transistors. It belongs to the broader taxonomy of MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor, and is widely used in synchronous rectification, DC-DC converter switching stages, and motor-driver half-bridges where compactness and thermal coupling matter. Key features of this part include: 100V drain-source breakdown, low R_DS(on) of 61 mΩ (typ.) at V_GS = 10V for low conduction loss, integrated gate-source protection, low gate charge for fast switching, and a Wettable Flank PG-TDSON-8-10 footprint that supports automated optical inspection (AOI) on the solder joints. The 8-pin leadless package also exposes a thermal pad that delivers a junction-to-case thermal resistance suitable for high-current switching stages. Technically, the device is built on Infineon's OptiMOS™ trench technology, which minimizes on-resistance per unit silicon area and reduces the figure of merit (FOM = R_DS(on) × Q_G). The internal co-pack of two identical dies simplifies synchronous buck/boost or half-bridge designs in 48V automotive and industrial power conversion where board space is at a premium. Typical applications include 48V to 12V DC-DC converter switching stages (telecom and computing), motor-driver H-bridges (e.g., e-bike and small-EV auxiliary drives), battery management system (BMS) protection FETs, and industrial solenoid/relay driver outputs. The 100V rating also suits industrial 24V/36V/48V bus rails, providing generous transient headroom for inductive kick and back-EMF events. When designing with this dual MOSFET array, ensure that both gates are driven with matched gate resistors to prevent shoot-through in half-bridge configurations. The exposed pad must be soldered to a sufficient copper area (typically ≥1 cm²) to keep junction temperature rise within safe limits under continuous high-current operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers compare the IPG16N10S461AATMA1 against same-package Infineon and competitor parts in a single reference.
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
The Infineon IPG16N10S4L61AATMA1 is a dual N-channel logic-level enhancement-mode MOSFET array rated at 100V VDS, 16A continuous drain current, and 29W power dissipation, housed in a surface-mount PG-TDSON-8-10 (Wettable Flank) package. It is qualified to AEC-Q101 for automotive applications and supports 175C operating junction temperature with 100% avalanche testing. A MOSFET array integrates two or more MOSFET dies in a single package, reducing PCB footprint and improving thermal coupling versus two discrete equivalents. The logic-level gate drive (VGS(th) typically below 2.5V) allows direct control from 3.3V or 5V microcontrollers without a dedicated gate driver stage. Within the broader hierarchy, MOSFET arrays belong to discrete semiconductors -> transistors -> MOSFETs -> power switches, serving as the lowest-level switching element in motor drives, solenoid drivers, and synchronous buck converter stages. Key specifications include dual N-channel configuration, 100V drain-source breakdown voltage, 16A continuous drain current at 25C, 29W maximum power dissipation, and a logic-level gate threshold. The PG-TDSON-8-10 package with wettable flanks enables automated optical inspection (AOI) of solder joints, a critical requirement for automotive-grade PCB assembly lines. The MSL1 moisture sensitivity rating and 260C peak reflow compatibility simplify high-volume SMT manufacturing. Architecturally, the IPG16N10S4L61AATMA1 uses Infineon's OptiMOS technology platform with trench-cell structure for low on-state resistance per unit silicon area. The dual-die configuration allows half-bridge, dual-side, or back-to-back topologies in a single 5mm x 6mm outline, saving roughly 50% board area compared to two discrete TDSON-8 MOSFETs. Avalanche ruggedness is verified at 100% of production units, supporting inductive load switching such as motors, relays, and solenoids. Typical applications include automotive 12V/24V body electronics, brushless DC (BLDC) motor drivers, electronic power steering (EPS) auxiliary circuits, LED lighting drivers, and industrial solenoid/valve controllers. The AEC-Q101 qualification makes it particularly suitable for under-hood and chassis electronics where temperature and reliability demands exceed consumer-grade requirements. When designing with this part, ensure the gate drive voltage fully enhances the MOSFET (VGS >= 4.5V for lowest Rds(on)). The wettable flank package requires standard reflow profiles; no special solder paste or stencil changes are needed beyond standard No-Clean SAC305 alloys. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, helping engineers accelerate component selection.
IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon
The Infineon IPG20N04S408ATMA1 is a dual N-channel MOSFET from the OptiMOS power-MOSFET family, integrating two independent 40 V / 7.6 mOhm switches in a single PG-TDSON-8-4 (SuperSO8) surface-mount package. Each channel is rated for 20 A continuous drain current at 25 degC case temperature with a maximum R_DS(on) of 7.6 mOhm at V_GS = 10 V, providing low conduction loss for high-current 12 V and 24 V automotive and industrial switching rails. The device is qualified to AEC-Q101, MSL1, and RoHS, with 100 percent avalanche testing and an operating junction temperature of 175 degC. What is a MOSFET: a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a voltage-controlled three-terminal switch used to gate current flow between source and drain terminals in response to a gate-source voltage. MOSFETs sit within the hierarchy: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> OptiMOS. Dual-FET arrays like the IPG20N04S4-08 series combine two MOSFETs in one package to save PCB area and simplify half-bridge, full-bridge, and synchronous-rectifier topologies. Key features of the IPG20N04S408ATMA1 include 7.6 mOhm maximum R_DS(on) at 10 V V_GS, 40 V V_DSS rating with 20 A continuous I_D per channel, 65 W maximum power dissipation in the PG-TDSON-8-4 package, and 100 percent avalanche-rated design. The OptiMOS silicon process provides low gate charge (Q_G) and low Q_rr, minimizing switching losses in high-frequency PWM applications up to several hundred kHz. PG-TDSON-8-4 footprint enables significant PCB area savings versus two DPAK packages. The IPG20N04S408ATMA1 leverages Infineon's OptiMOS trench technology, which delivers a Figure-of-Merit (R_DS(on) x Q_G) that is competitive with leading 40 V planar and trench processes. The dual-channel monolithic construction provides matched die parameters for symmetric switching, which is critical for synchronous rectification, motor H-bridges, and DC-DC half-bridge converter phases. The 175 degC junction rating supports under-the-hood automotive and hot-spot industrial deployments. Typical applications include automotive 12 V battery switching, DC-DC converter high-side / low-side switches, BLDC motor drive half-bridges, solenoid and relay replacement, OR-ing FETs in redundant power systems, and hot-swap controllers. The dual-channel form factor makes this part especially well-suited for half-bridge and full-bridge topologies where two switches must be tightly matched. When designing with this part, ensure adequate copper cooling: at 1 W per channel dissipation the PG-TDSON-8-4 rises roughly 50 degC without a thermal pad layout. Place gate-drive resistors (10-100 ohm) close to each gate pin to suppress ringing from the low-Q_G, low-C_iss combination. This page synthesizes distributor pricing as of 2026-09-14, pin-compatible OptiMOS drop-in alternatives, and design considerations that complement the manufacturer datasheet.
IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon
The Infineon IPG20N04S4L07ATMA1 is a dual N-channel logic-level enhancement-mode power MOSFET array housed in a PG-TDSON-8-4 (TDSON-8-4) surface-mount package. It is rated for 40V VDS, continuous drain current of 20A per channel, and a maximum power dissipation of 65W, with an exceptionally low typical on-state resistance of 7.2 mΩ at 10V VGS. The device is AEC-Q101 qualified and supports an operating junction temperature up to 175°C, making it well suited for harsh-environment automotive applications. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) array combines two independent MOSFET die in a single thermally-coupled package, allowing designers to replace two discrete DPAK parts with one smaller footprint and lower parasitics. The IPG20N04S4L07ATMA1 belongs to Infineon's OptiMOS™ T2 family and is part of the broader discrete semiconductor > MOSFET product hierarchy, bridging discrete transistors and integrated power stages used in modern power management designs. Key features include logic-level drive (full enhancement at VGS = 4.5V), 100% avalanche-tested dice, MSL1 moisture sensitivity (peak reflow 260°C), and RoHS-compliant lead-free terminations. The exposed-drain pad of the TDSON-8-4 package provides a low thermal resistance path, enabling sustained high-current switching without external heat sinking in well-designed PCBs. Both MOSFETs share the same die family, ensuring matched R_DS(on) and switching characteristics for synchronous or half-bridge topologies. Typical applications include automotive 12V/24V load switching, body electronics modules, ECU power distribution, electric power steering (EPS), and motor driver half-bridges. Its dual-channel configuration makes it equally suitable for synchronous buck converters where two low-side/high-side FETs share a compact footprint, and for reverse-polarity protection circuits where both polarities must be blocked. When designing with this part, pay close attention to gate-drive voltage headroom and use a dedicated gate resistor to dampen ringing. The TDSON-8-4 footprint allows direct replacement of two DPAK footprints, enabling significant PCB area savings. Always consult the manufacturer datasheet for absolute maximum ratings and safe operating area curves before finalizing thermal design.
IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon
The Infineon IPG20N04S4L08AATMA1 is a dual N-channel logic-level enhancement-mode MOSFET in a wettable-flank PG-TDSON-8-10 surface-mount package, rated 40V VDS, 20A continuous drain current, and 8.2 mΩ maximum R<sub>DS(on)</sub>. It belongs to Infineon's OptiMOS-T2 automotive 40V family, integrating two independently-controlled MOSFETs in a single 8-pin TDSON outline to halve PCB footprint versus two discrete DPAK parts. The device is AEC-Q101 qualified to 260°C peak reflow and rated for 175°C operating junction temperature, making it well-suited for under-hood and other harsh-environment automotive loads. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source terminals when the gate-to-source voltage exceeds the threshold. The IPG20N04S4L-08 is built on Infineon's OptiMOS-T2 trench technology, which minimizes the on-state resistance per unit silicon area. In a dual configuration, the part is hierarchically classified as: dual MOSFET -> MOSFET array -> discrete semiconductor -> power semiconductor -> semiconductor. Logic-level compatibility (4.5V gate drive) lets it interface directly with microcontrollers and low-voltage gate drivers without bootstrap or level-shifting circuitry. Key features include 8.2 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10V, logic-level V<sub>GS(th)</sub> typically 1.7V, 100% avalanche-tested, RoHS-compliant green product, and wettable-flank leads that support automated optical inspection (AOI). The PG-TDSON-8-10 package exposes a thermal pad that drops junction-to-ambient thermal resistance below 50°C/W on a standard 1 oz copper JEDEC EIA/JESD51 2s2p test board. 175°C maximum junction temperature and 54W power dissipation provide substantial thermal margin for high-current pulse loads. The two N-channels share the same die family but are isolated for half-bridge, synchronous-rectifier, dual-switch, or back-to-back load-switch topologies. With 8.2 mΩ per channel, total conduction loss at 10A per channel equals approximately 0.82W, an excellent figure for a single 5x6mm outline. The part also supports continuous 20A per channel and pulsed drain currents substantially higher for inrush and motor-start events. Typical applications include automotive 12V/24V load switching (HVAC blowers, fuel pumps, solenoid drivers), DC-DC converter synchronous-rectifier stages, motor-driver H-bridges, eBike and e-scooter controller switches, battery management protection FETs, and dual low-side PWM loads. The AEC-Q101 grade and wettable flank make it especially well suited to safety-relevant body-electronics modules where solder-joint inspection and long-term reliability are mandatory. When designing with this device, calculate conduction loss as P = I² × R<sub>DS(on)</sub> × (1 + 0.005 × (Tj - 25)) to account for the positive temperature coefficient. Ensure V<sub>GS</sub> rises fully above 10V at the gate pin to guarantee the datasheet R<sub>DS(on)</sub>; 4.5V V<sub>GS</sub> will substantially increase losses. Place gate-source resistors of 10-100 kΩ to hold each MOSFET off during controller reset. This page consolidates distributor pricing, drop-in alternatives in the same PG-TDSON-8-10 footprint, and practical design notes drawn from the Infineon OptiMOS-T2 40V family datasheet - information not available on a single manufacturer or distributor page.
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
The Infineon IPG20N04S4L08ATMA1 is a dual N-channel logic-level enhancement-mode MOSFET array built on Infineon's OptiMOS™-T2 40V platform, housed in a compact surface-mount PG-TDSON-8-4 (TDSON-8) package. It delivers 40 V drain-to-source breakdown voltage, 20 A continuous drain current at 25°C, and a maximum on-resistance of 8.2 mΩ measured at VGS = 10 V and ID = 17 A, dissipating up to 54 W of power. The dual-die topology provides two independent switches in a single small footprint, allowing designers to replace multiple DPAK parts for significant PCB area savings. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor control, and load management. Logic-level MOSFETs accept standard 4.5 V – 10 V gate drive directly from microcontrollers or gate drivers without needing a charge pump. MOSFET arrays like the IPG20N04S4L08ATMA1 sit inside the hierarchy: MOSFET -> power MOSFET -> N-channel enhancement MOSFET -> dual MOSFET array -> OptiMOS family -> automotive-grade power transistor. Key features of this device include a low typical gate charge Qg for fast switching, 100% avalanche-tested dice for ruggedness, AEC-Q101 qualification for automotive reliability, MSL1 moisture sensitivity up to 260°C peak reflow, and a logic-level gate threshold that enables direct drive from 5 V logic. The exposed-drain pad (PG-TDSON-8-4) provides a low thermal-resistance path from junction to PCB copper. The OptiMOS-T2 cell geometry reduces RDSon per silicon area and minimizes gate charge, improving both conduction and switching losses. This architecture is particularly efficient in 12 V automotive and 24 V industrial systems where low on-resistance directly translates into cooler operation and longer battery life. The dual-die monolithic construction ensures matched Rds(on) and Qg between the two channels, simplifying synchronous-rectifier or half-bridge designs. Typical applications include automotive electronic control units (ECUs), brushless DC (BLDC) motor drivers, solenoid and valve drivers, LED lighting drivers, DC-DC converter synchronous rectification, and battery-management system (BMS) protection circuits. Its AEC-Q101 qualification makes it a strong fit for under-hood and chassis electronics where long-term reliability is mandatory. When designing with this part, ensure that the gate-drive voltage does not exceed the absolute maximum VGS of ±20 V and that adequate PCB copper area is provided under the thermal pad. Because the two MOSFETs share a common-source lead on certain pins, verify pin assignments against your controller's high-side/low-side drive pattern before laying out the schematic. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
The Infineon IPG20N04S4L11ATMA1 is a dual N-channel OptiMOS power MOSFET in a logic-level enhancement-mode configuration, rated for 40V drain-to-source voltage (VDS) and 20A continuous drain current per channel (50A total), housed in a compact 8-pin TDSON EP (PG-TDSON-8-4 / Super S08) surface-mount package. Key specifications include an ultra-low R<sub>DS(on)</sub> of 11.6 mOhm at VGS=10V and ID=17A, AEC-Q101 automotive qualification, 100% avalanche testing, and a maximum power dissipation of 41W. A dual N-channel MOSFET is a power-semiconductor device that integrates two N-channel enhancement-mode FETs in a single package, allowing high-side/low-side, half-bridge, synchronous-rectification, or parallel-MOSFET topologies to be implemented with one component instead of two discretes. As part of the broader MOSFET -> power MOSFET -> discrete semiconductor -> power management IC hierarchy, this OptiMOS-T2 device targets switched-mode power conversion applications where the switching transistor is the dominant loss contributor. The IPG20N04S4L11ATMA1's logic-level gate drive (10V VGS for full R<sub>DS(on)</sub> spec) enables direct PWM control from low-voltage microcontrollers, gate drivers, or 12V automotive rails without external level shifting. The OptiMOS-T2 trench technology provides low figure-of-merit (FOM = R<sub>DS(on)</sub> * Qg), reducing both conduction and switching losses. The 100% avalanche-rated design confirms robust performance under inductive load switching, which is a frequent failure mode in motor and solenoid drive circuits. Typical applications include automotive 12V/24V brushless DC (BLDC) motor drives, electronic power steering (EPS), DC-DC converter high-side and synchronous-rectifier switches, solenoid and valve drivers, LED driver stages, and battery-management protection circuits. The dual-die Super S08 package replaces two DPAK footprints, providing significant PCB area savings and reduced parasitic loop inductance. When designing with this device, ensure the gate-drive voltage meets the logic-level threshold (VGS(th) typically 1.7V), and respect the 41W power dissipation limit by calculating junction temperature rise from the package thermal resistance. Always use Kelvin-source PCB layout when possible to suppress gate ringing at high di/dt. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon
The Infineon IPG20N06S2L65AATMA1 is an automotive-grade dual N-channel logic-level MOSFET array housed in a wettable-flank PG-TDSON-8-10 (TDSON-8 EP) surface-mount package. Each channel is rated at 55 V VDS and 20 A continuous drain current, with a combined power dissipation of 43 W. The device is part of the Infineon OptiMOS Power-Transistor family optimized for high-efficiency, low-loss switching in compact PCB footprints. A MOSFET array is a semiconductor device that integrates two or more MOSFET transistors into a single package, enabling half-bridge, full-bridge, or synchronous-rectifier topologies without requiring multiple discrete components. The dual-channel configuration reduces PCB area, simplifies gate-drive routing, and improves thermal coupling between channels. The Infineon OptiMOS family uses advanced trench technology to minimize on-state resistance and gate charge, placing the device in the power MOSFET -> discrete semiconductor -> semiconductor hierarchy of components. Key specifications include a logic-level gate drive (VGS(th) compatible with 3.3 V and 5 V microcontrollers), 100% avalanche-tested ruggedness, and AEC-Q101 qualification for automotive environments. The wettable-flank package terminals enable automatic optical inspection (AOI) of solder joints, critical for high-reliability automotive manufacturing lines. MSL1 rating allows peak reflow up to 260 C, with a maximum operating temperature of 175 C. Typical applications include automotive solenoid control, LED lighting drivers, DC-DC converter high-side/low-side switches, and motor-driver H-bridges. The dual-channel architecture makes it especially well-suited for synchronous buck converters where two MOSFETs are required in a single footprint. When designing with this device, ensure the gate-drive voltage meets the logic-level VGS(th) requirement and that the PCB thermal pad is properly soldered to maximize heat dissipation. The wettable flanks require no special solder paste or stencil changes versus standard DFN packages.
IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon
The Infineon IPG20N06S2L65ATMA1 is a dual N-channel logic-level MOSFET array rated at 55 V VDS and 20 A continuous drain current per channel, integrated in a PG-TDSON-8-4 (TDSON-8 EP) surface-mount package. It features a typical RDS(on) of 65 mΩ at VGS=10 V, logic-level gate drive (full enhancement at VGS=4.5 V), and 43 W total power dissipation. AEC-Q101 qualified for automotive use, MSL1 to 260°C peak reflow, with 100% avalanche-tested dice. A MOSFET array (also called a dual MOSFET or co-pack) integrates two independent N-channel enhancement-mode transistors in a single thermally enhanced package. As a member of the power MOSFET hierarchy (power MOSFET -> MOSFET array -> discrete semiconductor), it allows designers to replace two DPAK components with one SuperSO8 footprint, saving PCB area and reducing parasitic loop inductance in half-bridge, synchronous, or parallel high-side/low-side topologies. Key features include low RDS(on) of 65 mΩ typical at VGS=10 V for minimal conduction loss, logic-level compatibility for direct MCU GPIO drive, integrated N-channel pair for symmetric switching, and a SuperSO8/TDSON-8 EP pad that delivers a theta_JA near 30 C/W when properly soldered to a sufficient copper pour. The array is fully avalanche-rated, allowing unclamped inductive switching in solenoid drive and LED PWM dimming circuits. Architecturally, the IPG20N06S2L-65 uses Infineon's OptiMOS-T2 55 V planar trench process, optimized for low gate charge and fast switching transitions. With Qg in the single-digit nC range, gate-drive losses are minimal even at 50 kHz PWM operation. The dual-die construction shares a common drain pin on the exposed pad, simplifying PCB layout for half-bridge and bidirectional load switching. Typical applications include automotive solenoid control, LED lighting drivers, DC motor H-bridges, battery management system (BMS) disconnect switches, and 12 V/24 V automotive load switches. The AEC-Q101 qualification makes it especially attractive for engine control units, body control modules, and LED headlamp drivers requiring long-term reliability under thermal-cycling stress. When designing with this array, ensure the exposed pad is soldered to at least 1 cm² of copper on each layer to maintain theta_JA within spec. Because the two dies share a common drain (the EP pin), the part is best suited for half-bridge or parallel high-side configurations rather than fully isolated high-side/low-side use. This page synthesizes distributor pricing, drop-in alternatives, and practical PCB thermal guidance not consolidated in the manufacturer datasheet, enabling faster engineering decisions.
IPG20N06S415ATMA2 - Dual N-Ch 60V 20A MOSFET | Infineon
The Infineon IPG20N06S415ATMA2 is a dual N-channel enhancement-mode MOSFET array rated at 60 V VDS, 20 A continuous drain current per channel, and 50 W total power dissipation, housed in a PG-TDSON-8-4 (Super S08) surface-mount package. The part is qualified to AEC-Q101 for automotive applications and offers 15.5 mOhm typical R_DS(on) at V_GS = 10 V, making it well suited to high-current, low-loss switching. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor drive, and load switching. Dual MOSFET arrays such as this one integrate two N-channel devices in a single package, reducing PCB area versus two discrete DPAK parts and simplifying synchronous-rectifier or half-bridge topologies. The PG-TDSON-8-4 (Dual Super S08) footprint can replace multiple DPAK packages for significant board-area and cost savings. Key features include 60 V drain-source breakdown voltage, 15.5 mOhm maximum R_DS(on) at 10 V V_GS, 100% avalanche-tested ruggedness, MSL1 (moisture sensitivity level 1) rating up to 260 C peak reflow, and a 175 C maximum operating junction temperature. The part is RoHS compliant and marketed as a Green Product. Logic-level compatible gate drive is supported by the standard 10 V gate rating, with typical V_GS(th) in the 2-3 V range enabling microcontroller-direct switching in many cases. The IPG20N06S415ATMA2 uses Infineon's OptiMOS-style trench technology, which minimizes conduction and switching losses through extremely low on-state resistance and low gate charge. The dual common-drain / common-source internal connection supports half-bridge, full-bridge, or independent dual-switch topologies. The exposed top-side pad on PG-TDSON-8-4 provides direct thermal path to PCB copper, enabling high steady-state current without external heatsinking at moderate ambient temperatures. Typical applications include automotive 12 V / 24 V load switching, DC-DC converter synchronous rectifiers, H-bridge motor drivers, electronic power steering (EPS) half-bridges, and battery management system (BMS) disconnect switches. The 60 V rating also supports industrial 24 V bus systems and telecom -48 V hot-swap controllers. Dual configuration reduces loop inductance and EMI versus discrete alternatives. When designing with this part, prioritize PCB thermal copper area on the exposed pad to maintain junction temperature below 175 C under worst-case load. A 10 V gate drive (or higher) is required to fully enhance the channel and achieve the rated R_DS(on); 5 V logic may not be sufficient for full enhancement. Always derate continuous current based on measured RthJA versus copper area, since the device can dissipate significant power in high-current switching loops. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a faster path from selection to prototype.
IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon
The Infineon IPG20N06S4L14AATMA1 is a dual N-channel logic-level enhancement-mode MOSFET housed in a wettable-flank PG-TDSON-8-10 surface-mount package, rated for 60 V VDS, 20 A continuous drain current per channel, and 50 W total power dissipation. It features an ultra-low R<sub>DS(on)</sub> of 13.7 mΩ typical at VGS=10 V and 14 mΩ at logic-level VGS=4.5 V, optimized for automotive 12 V/24 V bus systems and high-efficiency DC-DC conversion. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that uses an insulated gate to modulate conduction between source and drain terminals. Dual N-channel MOSFETs integrate two independent N-channel FETs in a single package, halving PCB footprint versus discrete pairs. Within the broader power semiconductor taxonomy, MOSFETs sit beneath transistors and discrete semiconductors, serving as the workhorse switching element in synchronous buck converters, motor drives, and load switches across automotive, industrial, and consumer power systems. Key features include AEC-Q101 automotive qualification with 175°C operating junction temperature and 260°C peak reflow compatibility, 100% avalanche-tested ruggedness, and logic-level gate drive enabling direct microcontroller GPIO control without a gate driver stage. The wettable-flank PG-TDSON-8-10 package supports automatic optical inspection (AOI) and is Green Product compliant per RoHS. The dual-die co-packaged design enables synchronous rectifier and half-bridge topologies in a single 5 mm × 6 mm footprint. Architecturally, the device uses Infineon's OptiMOS™ trench technology, achieving low figure-of-merit R<sub>DS(on)</sub> × Qg for fast switching at high efficiency. The integrated dual-die construction provides matched parasitic capacitance between channels, critical for synchronous buck converters where channel-to-channel timing mismatch causes shoot-through losses and EMI. Typical applications include automotive ECU power stages, 12 V/24 V brushless DC motor drives, synchronous rectification in DC-DC converters, battery management system (BMS) protection, and solenoid/relay drivers. Logic-level gate threshold (V<sub>GS(th)</sub> ≈ 1.7 V typical) allows direct 3.3 V or 5 V MCU PWM control without a pre-driver, reducing BOM cost and board area. When designing with this device, ensure the gate drive voltage reaches the specified plateau during switching transients and that PCB layout minimizes source-inductance loop area. For high-frequency synchronous buck designs above 500 kHz, pair with a gate driver IC for optimal efficiency and to mitigate shoot-through risk during dead-time transitions. This page synthesizes distributor pricing, parametric comparison against AEC-Q101 alternatives, and practical design notes not consolidated in the manufacturer datasheet, enabling faster sourcing and design-in decisions for automotive power engineers.
IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
The Infineon IPG20N10S436AATMA1 is a dual N-channel 100V, 20A OptiMOS power MOSFET array in a surface-mount PG-TDSON-8-10 (Wettable Flank) package, rated for 43W total power dissipation and AEC-Q101 automotive qualification. Two independent enhancement-mode N-channel MOSFETs share the same footprint, simplifying half-bridge, full-bridge, and synchronous-rectification designs. A dual MOSFET array integrates two die into one package to deliver a compact, thermally efficient switch network for power conversion. Within the broader semiconductor taxonomy, it sits under power MOSFET -> discrete semiconductor -> transistor. The OptiMOS family from Infineon targets low on-state resistance and high switching speed in voltage classes from 30V up to 250V, making this 100V member well-suited for 48V automotive subsystems, 24V industrial rails, and motor-drive bridges. Key features include 100V drain-source breakdown (VDS), 20A continuous drain current per channel, low RDS(on) for reduced conduction loss, and a wettable-flank lead frame that enables automated optical inspection (AOI) of solder joints. The part is 100% avalanche-tested, supports MSL1 up to 260C peak reflow, and operates across -55C to +175C junction temperature. Green-product (RoHS-compliant) construction and AEC-Q101 qualification make it drop-in ready for automotive and harsh-environment designs. Internally, each die uses a TrenchFET-style vertical DMOS cell structure that minimizes on-resistance per unit area while keeping gate charge low. The PG-TDSON-8-10 package exposes the die-attach pad for low thermal resistance, supporting the 43W power budget at moderate PCB copper area. Typical applications include automotive 48V mild-hybrid power stages, DC-DC converter synchronous rectification, brushed and BLDC motor driver half-bridges, and solenoid/relay driver arrays. The dual-MOSFET arrangement is particularly efficient where two switches operate in complementary fashion, such as in H-bridge motor topologies. When designing with this part, ensure the gate-drive voltage exceeds the threshold under all temperature conditions and that the PCB thermal design dissipates 43W within the junction temperature budget. Decoupling the gate-drive supply close to each gate pin suppresses ringing during fast switching transitions. This page consolidates distributor pricing, verified drop-in alternatives, and design guidance that go beyond the manufacturer datasheet summary.