MOSFETs
Produtos (1294)
MRF7S21170HSR3 - 50W WCDMA RF Power MOSFET, 2110-2170 MHz | NXP
The NXP MRF7S21170HSR3 is a 50 W AVG (peak ~214 W) lateral N-channel enhancement-mode RF power MOSFET designed for single-W-CDMA base-station transmitter final stages covering the 2110–2170 MHz PCS/AWS downlink band. Operating from a 28 V rail, the device is specified for 16 dB typical power gain at 2.17 GHz and is characterized for class-AB multi-carrier W-CDMA drive. The part is housed in the NI-880S ceramic flanged power package (CASE 465B-04) with a copper flange for direct bolted heatsinking and two bolt-down RF leads. What is an RF power MOSFET? An RF power MOSFET (radio-frequency power metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized to amplify high-frequency signals at significant power levels. Unlike small-signal MOSFETs used for switching or low-level logic, RF power MOSFETs feature lateral die layouts, thick metal gate/source overlay structures, and ceramic/air-cavity packages with very low parasitic inductance, allowing them to deliver tens to hundreds of watts into 50-ohm loads at GHz frequencies. They sit at the top of the power transistor hierarchy: power transistor → RF power transistor → RF power MOSFET → lateral N-channel enhancement-mode RF power MOSFET. Key differentiating specifications for the MRF7S21170HSR3 include: 50 W average output power at 28 V, 16 dB typical gain, ~50% W-CDMA drain efficiency at rated Pout, integrated ESD protection, and a thermally robust NI-880S package designed for chassis-mounted or cold-plate cooling. The lateral N-channel structure provides excellent thermal stability and ruggedness into a 5:1 VSWR mismatch, which is critical for cellular base-station reliability under antenna-detuned fault conditions. Architecturally, the MRF7S21170HSR3 is a single-ended lateral MOSFET die that uses NXP's HV7 RF power process. The NI-880S package provides a low-inductance common-source path and integrated pre-matched input/output leadframes. This combination enables designers to build Doherty, push-pull, or single-ended Class AB final stages with minimal external matching complexity at the 2110–2170 MHz band. Typical applications include W-CDMA/HSPA/LTE macro-cell base-station power amplifiers at 2.1 GHz, multi-carrier GSM/EDGE linear amplifiers, PCN/PCS/cellular radio driver stages, and WLL (wireless-local-loop) infrastructure. The part is also widely used as a benchmark driver for later Doherty amplifier designs targeting the same band. When designing with this part, evaluate thermal performance first: at 50 W CW and 50% efficiency, the device dissipates approximately 50 W. The NI-880S flange must be bolted to a heatsink or cold plate with adequate airflow; thermal grease and a torque-specified bolt schedule are mandatory. Bias sequencing and PCB microstrip layout should follow NXP's MRF7S21170H application note to maintain stability across the 2110–2170 MHz passband. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer page, including a side-by-side comparison with the 230 W AFT18S230SR5 and the lower-band MRF7S15100HSR3.
MRF7S21210HR5 - 63W RF Power LDMOS 2.17GHz | NXP Semiconductors
The NXP Semiconductors MRF7S21210HR5 is a 63 W RF power N-channel LDMOS transistor designed for 2.17 GHz applications, featuring 18.5 dB power gain and operating from a 28 V test supply at 1.4 A quiescent bias, housed in an NI-780H-2L ceramic/bolt-down package. The device is part of NXP's seventh-generation MRF7S series, optimized for high-power pulsed and CW RF amplification in the 2110-2170 MHz wireless-infrastructure band. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power transistor that combines high RF output power, high gain, and high efficiency into a single robust die. It belongs to the broader power-MOSFET family and is widely used as the final-stage active device in base-station power amplifiers, where it converts DC supply power into amplified RF energy. The MRF7S21210HR5 specifically targets the 2.1 GHz LTE/UMTS band with ceramic packaging engineered for superior thermal performance under continuous RF drive. Key features include a 65 V drain-source breakdown rating providing wide RF over-voltage margin, an output power of 63 W (CW or pulsed) at 2.17 GHz with 18.5 dB gain, and rugged construction rated for mismatch tolerance. The 28 V typical operating bias matches standard base-station DC infrastructure, and the integrated ESD protection simplifies factory handling. The MRF7S21210HR5 uses NXP's HV7 LDMOS process technology, which delivers high drain efficiency (typically 45-55% in Doherty configurations) by minimizing on-resistance and parasitic capacitances. The die is internally matched for 50 ohm operation at 2.17 GHz, simplifying external matching networks and accelerating time-to-market for amplifier designers targeting the LTE/UMTS downlink spectrum. Typical applications include LTE, WCDMA, and UMTS base-station power amplifiers, repeaters, and small-cell infrastructure; tactical and aerospace RF links operating in the 2.1 GHz band; and laboratory-grade RF power test equipment requiring broadband CW/pulsed amplification. Designers pair this transistor with NXP's driver-stage LDMOS parts and 3G/4G Doherty reference designs. When designing with this device, follow NXP's application-note thermal mounting guidelines - the NI-780H-2L package requires a bolted heatsink with thermal compound and a solid copper-clad PCB or copper-molybdenum carrier to maintain junction temperature below 200 °C. Exceeding the absolute maximum drain voltage (65 V) under load-mismatch conditions will degrade device reliability. This page synthesizes NXP datasheet specifications, distributor pricing tiers, and applied design guidance - engineering context not consolidated on any single distributor page.
MRF7S24250NR3 - 250W RF Power LDMOS Transistor 2.45GHz | NXP
The NXP MRF7S24250NR3 is a 250 W CW RF power LDMOS transistor designed for industrial, scientific, and medical (ISM) applications at 2450 MHz, including industrial heating, microwave ovens, and RF plasma generation. It operates from a 32 V supply rail and is supplied in the OM-780-2 ceramic air-cavity package with input and output matched internally for simplified board integration at the 2.4 GHz ISM band. Key specifications include 250 W typical output power, 14.7 dB small-signal gain, and a 100 mA quiescent bias current at 30 V. The device also features integrated ESD protection, a moisture sensitivity level (MSL) of 3, and a peak reflow rating of 260 C for 40 seconds. The terminal finish is tin (JESD-609 e3), and it is supplied on tape-and-reel for high-volume SMT-compatible handling. From an architecture standpoint, the MRF7S24250NR3 uses NXP's laterally diffused MOS (LDMOS) process, a technology that has displaced older bipolar and GaAs devices in high-power RF applications because it combines high breakdown voltage, high gain, and excellent thermal stability. The OM-780-2 flanged ceramic package provides a low thermal resistance path to the heatsink, which is essential when dissipating more than 250 W of pulsed or continuous RF power in compact amplifier modules. Typical applications include 2.45 GHz industrial microwave generators, RF plasma lighting drivers, ISM-band solid-state cooking appliances, and medical diathermy / hyperthermia equipment. The 2450 MHz operating frequency aligns with the global ISM band allocations, enabling a single design to serve multiple geographies. When designing with this device, attention must be paid to heatsink selection and overall thermal management. Because the LDMOS junction must remain below its maximum rated temperature during continuous-wave (CW) operation, the system heatsink should be sized to keep the flange temperature below the recommended 65 C under worst-case load. This page synthesizes real distributor pricing and availability, drop-in compatible alternatives, and practical design notes not found in the manufacturer datasheet alone.
MRF7S27130HSR3 - 23W 2.7GHz WiMAX RF Power MOSFET | NXP
The NXP Semiconductors MRF7S27130HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for WiMAX base station applications across the 2500–2700 MHz band. Key headline parameters include 23 W average output power at 28 V supply, 16.5 dB power gain, and 130 W peak P1dB capability, all packaged in the NI-780S ceramic-flanged RF transistor case. Per the NXP datasheet, it is part of the MRF7S27130 family and is built on Freescale's HV7 later-generation lateral MOSFET process for high breakdown and broadband RF performance. A radio-frequency power MOSFET (RF MOSFET) is a discrete transistor optimized to deliver measurable radio-frequency output power at high efficiency and gain, sitting in the hierarchy: RF MOSFET -> RF power transistor -> power semiconductor -> discrete semiconductor. Unlike small-signal MOSFETs used for logic-level translation, RF power MOSFETs are characterized for output power (W), gain (dB), drain efficiency (%) and ruggedness under mismatch, and are the building blocks of the final stage in any transmitter line-up. The MRF7S27130HSR3 is specifically engineered for OFDM-based WiMAX signals that demand high peak-to-average ratios and linear amplification. Differentiating specifications include a drain-source breakdown voltage rated above the 28 V operating rail, an integrated ESD protection network, and a ceramic NI-780S package with bolt-down mounting for low thermal resistance to the system heatsink. The HSR3 suffix denotes a tape-and-reel, RoHS-compliant shipping option for high-volume SMT-style assembly onto matched RF carrier plates. According to the NXP datasheet, the device is also internally matched for input, simplifying the bill of materials in the typical 50-ohm reference design. The MRF7S27130HSR3 uses a lateral N-channel DMOS structure on an advanced silicon substrate, with multiple gate fingers distributed across the die to maximize periphery-to-area ratio. This gives the device its high gain and broadband response, while the ceramic NI-780S case provides low parasitic lead inductance essential for stable operation above 2.5 GHz. Internal matching networks reduce external component count. Typical applications include 2.5–2.7 GHz WiMAX base-station power amplifiers, broadband wireless access repeaters, and RF front-end boosters in the 2.6 GHz LTE band overlap region. The 23 W average rating supports macro-cell or micro-cell PA designs targeting mid-range EIRP outputs, and the device pairs naturally with NXP's WiMAX pre-driver and driver-stage lineup. When designing with this MOSFET, ensure the carrier plate provides adequate thermal dissipation (target case temperature below 100 °C) and that DC blocking, RF bypass, and harmonic-filter networks are placed within 2 mm of the leads. Always sequence the gate bias before the drain supply to prevent uncontrolled RF oscillation during turn-on. This page synthesizes verified distributor stock and pricing, drop-in NXP family alternatives, RF power dissipation design notes, and a parametric comparison table drawn from the official datasheet - information not consolidated on any single distributor page.
MRF7S27130HSR5 - 2.7GHz 130W RF Power MOSFET | NXP
The NXP (formerly Freescale) MRF7S27130HSR5 is a high-performance N-channel RF power MOSFET designed for continuous-wave and pulsed RF amplification in the 2.5–2.7 GHz wireless infrastructure band, delivering 130 W of output power with 16.5 dB typical gain from a 28 V supply. Housed in the NI-780S air-cavity ceramic package, it uses a single ended common-source configuration optimized for class AB linear operation. The device is intended for GSM, EDGE, WCDMA, LTE, and small-cell base-station final-stage PA designs. What is an RF power MOSFET? An RF power MOSFET (radio-frequency metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized to deliver high RF output power at high frequencies with high gain and reasonable efficiency. Within the broader hierarchy, RF MOSFETs sit under discrete semiconductors → transistors → MOSFETs → RF MOSFETs → laterally-diffused (LDMOS) RF devices. LDMOS has become the dominant RF PA technology for sub-3 GHz wireless infrastructure because it combines high gain, high power density, simple gate biasing, and excellent ruggedness into 50 Ω-matched ceramic or plastic packages. Key specifications of the MRF7S27130HSR5 include a drain-source breakdown of 65 V, a maximum continuous drain current of approximately 1.5 A, an operating frequency up to 2.7 GHz, 16.5 dB typical power gain, and 23 W typical CW output power in the matched reference circuit (the 130 W figure refers to pulsed / Doherty operation modes documented in the NXP datasheet). The ceramic NI-780S package provides low parasitic inductance and a bolt-down flange for direct heatsink mounting, giving it a thermal resistance (junction-to-case) on the order of 0.4–0.5 °C/W that supports the high dissipation of a 100 W-class PA. Architecturally, the device is an enhancement-mode N-channel LDMOS transistor built on NXP's HV7 RF power platform. Internally it integrates the input prematch, ESD structures, and a single source bond pad that can be grounded either through the package flange or through external leads, simplifying board-level bypass and improving broadband stability. The 28 V nominal VDS balances conduction loss against breakdown margin for typical cellular PA efficiencies of 50–60%. Typical applications include 2.6 GHz LTE / WiMAX base-station final-stage PAs, S-band industrial-scientific-medical (ISM) band transmitters, and pulsed-radar or DVB-T driver stages where the device's high gain reduces the number of driver stages required. The NI-780S package is also field-proven for Doherty amplifier topologies at 130 W average power. When designing with the MRF7S27130HSR5, ensure low-inductance source grounding via the package flange and a sufficiently large copper or aluminum heatsink to keep the channel below 200 °C at full CW power. Use NXP's reference design PCB stackup and matching network to preserve the published gain and efficiency numbers. This page synthesizes distributor pricing, same-NXP family drop-in alternatives, and practical thermal/RF design notes not found in the manufacturer datasheet.
MRF7S38010HSR5 - 2W RF Power MOSFET 3.4-3.6GHz NI-400 | NXP
The NXP MRF7S38010HSR5 is an N-channel RF power MOSFET designed for wireless infrastructure base-station applications in the 3.4 GHz to 3.6 GHz band, delivering 2 W of output power from a 30 V supply rail. What is an RF power MOSFET? An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor engineered to amplify high-frequency signals (typically tens of MHz to many GHz) with high gain, high efficiency, and ruggedness into mismatched loads. RF power MOSFETs sit within the broader taxonomy of power transistors -> discrete semiconductors -> semiconductor devices. They differ from low-frequency power MOSFETs by using a laterally diffused (LDMOS) or gallium-nitride (GaN) structure with carefully tuned input and output matching for a specific frequency band, allowing them to be used as the final or driver stage in cellular base-station transmitters, radar pulse amplifiers, and industrial RF heating sources. The MRF7S38010HSR5 provides 15 dB of small-signal power gain at 3.5 GHz, operates from a 30 V DC drain supply with typical quiescent drain current of 160 mA, and is housed in the NI-400 ceramic air-cavity package. It uses NXP's high-frequency RF MOSFET process technology that combines lateral diffusion with a ceramic hermetic air cavity for low parasitic inductance and superior thermal transfer to the chassis flange. This part targets small-cell and macro-cell base-station power amplifiers for WiMAX, LTE, and similar 3.5 GHz wireless services. It also serves commercial radar front-ends, microwave telemetry links, and test-bench RF amplifiers where a compact ceramic-packaged 2 W device is needed in a rugged air-cavity form. When designing with this MOSFET, observe the golden RF rule: never operate the device without proper 50-ohm input and output matching networks and a DC-isolated bias-T on the drain, since RF energy reflected back into the drain can overheat the die. Provide a sufficient grounded heatsink flange on the NI-400 mounting surface to maintain case temperature below the datasheet maximum. This page synthesizes distributor pricing tiers, carefully curated same-package drop-in alternative MPNs, and practical RF design notes that go beyond the manufacturer datasheet, helping engineers compare and source the right RF power transistor for their 3.5 GHz amplifier design.
MRF7S38040HSR3 - 8W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
The NXP MRF7S38040HSR3 is a lateral N-channel enhancement-mode RF power MOSFET designed for 3400-3600 MHz WiMAX base-station applications, delivering 8 W average output power from a 30 V supply in a NI-400S-2S ceramic flanged package. Per the NXP datasheet, the device is rated for 30 V VDD operation, 450 mA quiescent drain current (IDQ), 14 dB typical power gain, and operation across the full 3.4-3.6 GHz WiMAX band. The HSR3 suffix indicates the tape-and-reel shipping option of the NI-400S-2S variant, while the matching MRF7S38040HR3 uses the NI-400-240 bolt-down ceramic package. An RF power MOSFET is a discrete transistor designed to deliver high RF output power at microwave frequencies while maintaining gain, efficiency, and ruggedness. RF power MOSFETs sit at the top of the RF amplifier chain - the final stage between the driver amplifier and the antenna in a base-station transmitter - and they belong to the broader RF semiconductor family that includes LDMOS, GaN HEMT, and bipolar power transistors. NXP's lateral N-channel LDMOS architecture offers an excellent balance of cost, broadband performance, and reliability for sub-6 GHz wireless infrastructure. Key features include 14 dB typical power gain at 3.5 GHz, 8 W average output power in WiMAX OFDM service, integrated ESD protection, and a high-drain-current ceramic package with low thermal resistance for continuous-wave (CW) and pulsed-OFDM operation. The lateral MOSFET structure is fabricated on a high-resistivity silicon substrate, which minimizes parasitic capacitance and enables broadband matching across the 200 MHz WiMAX band without retuning. Typical applications include WiMAX, WiBro, BWA, and OFDM multi-carrier Class AB and Class C amplifier stages in 3.5 GHz base stations, customer-premises equipment (CPE), and small-cell wireless backhaul. The part is also commonly used as a final-stage PA or driver for higher-power 3.5 GHz amplifier chains. When designing with this part, ensure the bias network provides a stable 450 mA IDQ, use a 50-ohm microstrip matching network optimized for 3.5 GHz, and mount the NI-400S-2S package to a heatsink with proper RF and DC isolation. Always consult the NXP reference design for matching-network component values and bias sequencing. This page synthesizes distributor stock, drop-in alternatives, and practical design guidance beyond the manufacturer datasheet, including same-package NXP variants and verified cross-brand equivalents where pin-compatibility is confirmed.
MRF7S38040HSR5 - 8W 3.6GHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF7S38040HSR5 is an 8W RF power MOSFET designed for 3.4 GHz to 3.6 GHz wireless infrastructure applications, supplied in the NI-400S-2S ceramic package. It operates from a 30 V drain bias and delivers a minimum 14 dB power gain at the cellular WiMAX / LTE band edges. The device uses NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process technology optimized for high efficiency and ruggedness in Doherty and driver stages of base-station power amplifiers. A power MOSFET is a voltage-controlled semiconductor switch and amplifier built around a metal-oxide gate that controls current flow between source and drain terminals. RF power MOSFETs are a subclass of discrete MOSFETs that integrate input/output matching networks and thermal management into a single ceramic-flange package, enabling high RF power density at microwave frequencies. In the hierarchy, MRF7S38040HSR5 belongs to: RF MOSFET -> power MOSFET -> MOSFET -> discrete semiconductor -> active component. Key specifications include 30 V drain voltage rating, 450 mA typical quiescent drain current, 14 dB minimum power gain at 3.6 GHz, 8 W output power, and operation across the 3.4 GHz to 3.6 GHz band. The NI-400S-2S package provides a flanged ceramic body with bolt-down mounting for direct attachment to a heatsink or PCB copper heat-spreader, allowing sustained CW and pulsed operation in Doherty amplifier topologies. The internal LDMOS architecture provides high breakdown voltage, excellent thermal stability under mismatch, and broadband response. NXP's LDMOS process minimizes source-lead inductance and integrates ESD protection, making the MRF7S38040HSR5 tolerant of high VSWR conditions commonly encountered in field-deployed base-station amplifiers. Typical applications include 3.5 GHz WiMAX base-station power amplifiers, LTE small-cell driver stages, point-to-point microwave links, and Doherty final-stage amplifiers where high gain, linearity, and ruggedness are required. The 14 dB gain allows two-stage designs with lower-cost predrivers. When designing with this device, attention must be paid to PCB layout, source-lead grounding (multiple low-inductance vias), and adequate heatsinking. Designers must also provide a 30 V regulated drain supply with sequenced gate bias and follow the recommended bias sequence in the manufacturer datasheet to avoid device stress. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet for engineers selecting a 3.5 GHz band RF power transistor.
MRF7S38075HSR3 - 12W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
The NXP (formerly Freescale) MRF7S38075HSR3 is a 12 W average, 30 V lateral N-channel RF power MOSFET designed for 3400-3600 MHz WiMAX and broadband wireless applications. Packaged in the NI-780S ceramic flanged package (CASE 465-06, STYLE 1), it delivers a typical gain of 14 dB at 3.5 GHz and is rated for 900 mA DC quiescent bias with a 30 V drain supply. The 'HSR3' suffix denotes a tape-and-reel, RoHS-compliant production variant intended for high-volume SMT-compatible RF assembly lines using bolted or soldered-down thermal management. What is an RF Power MOSFET? An RF power MOSFET (Radio Frequency power Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete transistor optimized to amplify high-frequency signals from tens of MHz into the GHz range while delivering meaningful RF output power (watts, not milliwatts). RF power MOSFETs sit in the hierarchy: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> RF power MOSFET. They are the workhorse final stage of any base-station, repeater, or solid-state power amplifier driving an antenna at VHF/UHF/microwave frequencies. The MRF7S38075H family uses NXP's high-voltage lateral MOSFET process on a ceramic substrate (NI-780), giving it the thermal headroom needed to dissipate multi-watt RF power at S-band frequencies. Designed-in features include broadband impedance matching around the 3.5 GHz WiMAX band, integrated ESD protection structures, and a robust gold-metallized ceramic flange that bolts directly to a heatsink or pallet. The lateral geometry provides low parasitic capacitance and high drain efficiency relative to earlier-generation bipolar RF devices operating at the same band. Typical applications include 3.5 GHz WiMAX base-station power amplifiers, LTE/5G NR mid-band driver stages, broadband wireless access (BWA) subscriber units, military multiband RF links, and S-band solid-state radar transmitters. The 14 dB gain allows the part to drive a final P1dB stage with only modest input power from a preceding gain block. Design consideration: this is a 50 V-rated, 12 W average RF part - thermal design and PCB layout around the input/output matching network are critical. Use a properly tuned microstrip or stripline network on a low-loss RF substrate (Rogers RO4003C or similar) and mount the ceramic flange to a copper or aluminum spreader with thermal compound to keep the junction below 200 C under CW or long-pulse duty cycles. This page synthesizes NXP datasheet specifications, current distributor stock, and pin-for-pin RF MOSFET alternatives so RF design engineers can quickly evaluate drop-in options for 3.5 GHz WiMAX amplifier designs.
MRF8HP21080HR5 - 16W 2.17GHz RF Power LDMOS | NXP
The NXP Semiconductors MRF8HP21080HR5 is a W-CDMA/LTE lateral N-Channel RF power LDMOS transistor delivering 16W average output power at 2.17GHz in a 4-pin NI-780-4 (Case 465M) ceramic flange-mount package. It operates from a 28V test supply and is rated for a 65V drain-source breakdown, achieving 14.4dB power gain in the 2110–2170MHz cellular band. What is an RF Power LDMOS? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant transistor technology for high-power RF amplification in the 1–3GHz range. It belongs to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family and, more broadly, the RF power transistor hierarchy used in wireless infrastructure. Compared to GaN HEMT or bipolar RF transistors, LDMOS offers the best cost-per-watt at sub-3GHz frequencies and remains the workhorse for cellular base-station power amplifiers. The MRF8HP21080HR5 features high gain (14.4dB at 2.17GHz), robust 65V drain breakdown, and a thermally enhanced NI-780-4 ceramic flange package engineered for direct bolt-down to a heatsink or spreader. Its dual-channel configuration enables Doherty or push-pull amplifier designs. The device is purpose-built for W-CDMA and LTE base-station driver or final-stage amplification, with linearity and efficiency tuned for 3GPP signal profiles. Designed for cellular infrastructure RF amplification, the MRF8HP21080HR5 delivers 14.4dB gain, 65V breakdown ruggedness, and 16W average output power under W-CDMA/LTE test conditions. The NI-780-4 flange package provides low thermal resistance and is directly compatible with industry-standard RF amplifier module layouts used by macro-cell and small-cell base-station OEMs. Typical applications include W-CDMA/LTE base-station power amplifiers, Doherty final stages, driver amplifiers for higher-power PAs, and cellular repeater/boosters operating in the 2110–2170MHz band. Pair with circulators and digital predistortion (DPD) front-ends for production line systems. When laying out the PCB, route the RF input/output on 50Ω controlled-impedance traces and bond the gate/drain leads with minimal lead length to preserve gain and efficiency. Always bolt the ceramic flange to a clean, flat heatsink with proper thermal compound - inadequate cooling is the most common cause of field failure in LDMOS RF amplifiers. This page synthesizes distributor pricing, drop-in NXP alternative part numbers, and practical RF design guidance not aggregated in the manufacturer datasheet alone.
MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
The NXP MRF8HP21130HR5 is a 130 W N-channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA and LTE base-station applications in the 2110–2170 MHz band. Packaged in the NI-780-4 ceramic flanged form, the device delivers 14 dB gain and 28 W output power at 2.17 GHz when tested at 28 V with 360 mA quiescent bias. An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor FET optimized for high-frequency, high-power amplification. In the hierarchy of active RF devices it sits between small-signal GaAs/HBT MMICs (used for milliwatt-level receive chains) and traveling-wave tubes or GaN HEMTs (used for very high power or millimeter-wave). LDMOS remains the dominant technology for sub-3 GHz cellular infrastructure because of its mature 50 V silicon process, excellent linearity, and low cost-per-watt. The MRF8HP21130HR5 belongs to NXP's Airfast family, a portfolio targeting Doherty and Class AB final-stage amplifier modules. Key specifications include a drain-to-source breakdown of 65 V, 14 dB power gain, 28 W Pout at 28 V / 360 mA Idq, and operation across 2110–2170 MHz. The NI-780-4 air-cavity ceramic package provides low thermal resistance and bolt-down flange mounting for heatsink attachment. Built-in ESD protection and a wide gate-bias range simplify board-level integration into macro-cell and outdoor small-cell radios. Architecturally, the die uses NXP's HV8 LDMOS process — a refinement of the earlier HV7 platform — with optimized source-via grounding and a pre-matched input network. This delivers flat gain, high efficiency (>45 % drain efficiency in Doherty), and ruggedness into a 5:1 VSWR mismatch, all critical for cellular base-station PA designers balancing linearity (ACPR) against DC consumption. Typical deployments include W-CDMA, LTE, and 5G NR (in the n1/n3 bands) base-station final-stage PAs, where it is normally configured as a symmetric or Doherty pair. The same die supports Class AB, Class C, and pulsed-RF modulation formats, making it a flexible choice for multi-mode radios. When integrating this part, ensure proper sequencing of the gate bias before drain voltage and observe the maximum junction rating of 225 °C; flanged mounting with a generous thermal compound layer is mandatory to sustain the 130 W CW capability.
MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP
The NXP Semiconductors MRF8HP21130HSR3 is a lateral N-channel RF power MOSFET designed for W-CDMA and LTE cellular base station applications covering 2110-2170 MHz, delivering 28 W average output power at 28 V in a NI-780S-4 air-cavity ceramic package. It supports Class AB and Class C operation for typical cellular modulation formats and integrates an advanced high-performance in-package Doherty configuration. A lateral N-channel RF power MOSFET is a discrete transistor whose drain current flows laterally through a silicon die optimized for radio-frequency power amplification, as opposed to small-signal or switching transistors. In the power-amplifier (PA) hierarchy, RF power MOSFETs sit beneath GaN HEMTs and LDMOS devices and above small-signal MOSFETs, and are categorized by frequency band, breakdown voltage, and package style. The MRF8HP21130HSR3 belongs to NXP's MRF8HP high-power LDMOS family, engineered for sub-3 GHz cellular infrastructure where Doherty topologies are the dominant efficiency-boosting architecture. Key features include 14 dB small-signal gain, 28 W average output power with peak envelope power suited for LTE 10 MHz carrier waveforms, and a 28 V drain bias. The NI-780S-4 air-cavity ceramic package provides low thermal resistance and repeatable RF performance critical for Doherty amplifier combining. The device operates as part of a two-stage in-package Doherty configuration with integrated input splitter and output combiner, reducing external PCB complexity for the symmetric Doherty PA designer. Typical applications include W-CDMA and LTE base station power amplifiers, Doherty final-stage transmitters in the 2110-2170 MHz band (Band I / Band 4 / Band 10), and macro-cell or small-cell cellular infrastructure where the high gain and integrated package simplify board layout. The part is also referenced in design examples for driver and final-stage combinations in multi-carrier GSM/EDGE upgrade paths. When designing with this MOSFET, attention to PCB material and thermal management is critical. Use low-loss RF substrates such as Rogers RO4350B or RO4003C for the matching networks, and ensure the NI-780S-4 flange is bolted to a heatsink with proper thermal compound. Drain bias sequencing, gate bias adjustment for quiescent current, and proper input/output harmonic filtering are required for stable Doherty operation. This page synthesizes distributor pricing, drop-in alternatives, and design guidance drawn from the manufacturer datasheet and cross-reference sources, offering engineering context not duplicated on distributor product listings.
MRF8P18265HSR5 - 1.88GHz 72W LDMOS RF Power Transistor | NXP
The NXP MRF8P18265HSR5 is an N-channel enhancement-mode LDMOS RF power transistor designed for high-peak Doherty amplifier stages in 1.88 GHz cellular infrastructure, delivering 72 W output power with 16 dB gain and tested at 30 V. It is housed in an NI 1230S-8 air-cavity ceramic package optimized for high-power base-station RF performance. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET variant engineered for radio-frequency power amplification. Within the discrete semiconductor taxonomy, it sits under RF MOSFETs, which themselves belong to the power transistor family used in telecom infrastructure. LDMOS technology dominates macro-cell base-station power amplifiers because it combines high RF power density, excellent gain at UHF/microwave frequencies, and ruggedness under mismatched load conditions. Key specifications include a 65 V drain-source voltage rating, 800 mA continuous DC drain current, and operation centered at 1.88 GHz with 16 dB power gain. The device is engineered for high-efficiency Doherty amplifier configurations where the peaking amplifier must deliver substantial output while the carrier amplifier handles the average power envelope. The ceramic NI 1230S-8 package provides low thermal resistance and high RF gain stability under continuous CW and pulsed signal conditions. Architecturally, the MRF8P18265HSR5 uses NXP's HV8 LDMOS process generation, which integrates optimized matching structures inside the ceramic flange package. This reduces the need for external matching networks and improves gain flatness across the 1.8-2.0 GHz band. The high breakdown voltage gives designers significant headroom for VSWR mismatch survival typical of antenna-fed base-station PAs. Typical applications include 4G LTE macro-cell base-station Doherty final stages, WCDMA/UMTS power amplifiers, and high-peak RF transmitter boosters operating in the 1.8-1.9 GHz DCS/PCS band. Engineers select this part when designing Doherty PAs needing high gain and high peak power for the peaking amplifier path. A critical design consideration is thermal management: at 72 W CW output and roughly 50% drain efficiency, the device dissipates ~50 W internally. The NI 1230S-8 flange must be bolted to a heatsink or cold plate with proper thermal interface material, otherwise junction temperature will exceed the 200 C rating. Use proper sequencing of gate bias (VG) before drain voltage (VD) during turn-on. This page consolidates distributor pricing, verified parametric data, and practical drop-in alternatives not found in a single source, helping RF engineers accelerate design and sourcing decisions.
MRF8P20100HSR3 - 100W RF Power LDMOS, 1.8-2.0 GHz | NXP
The NXP MRF8P20100HSR3 is a 100 W (P3 dB) lateral N-channel RF power LDMOS transistor designed for single-carrier W-CDMA and GSM/EDGE base-station applications from 1805 to 2025 MHz, supplied in a NI-780S-4L (Case 465H-02) ceramic flanged package. According to the NXP datasheet MRF8P20100H.pdf, the device is specified at 28 V VDS with 400 mA quiescent bias current, delivers 16 dB typical power gain at 2.03 GHz, and is rated for 20 W average output power in W-CDMA service with -45 dBc ACLR linearity. A lateral double-diffused MOS (LDMOS) RF power transistor is a specialized power MOSFET architecture optimized for high-frequency, high-power amplification in wireless infrastructure. LDMOS devices combine a low on-resistance lateral channel with a robust drain region, allowing efficient operation at RF frequencies where conventional vertical power MOSFETs lose gain. As a member of the RF power transistor family - itself a subclass of discrete power semiconductors - LDMOS has become the dominant technology for macro-cell base-station power amplifiers below 3 GHz due to its high gain, good linearity, and broadband matching characteristics. Key features include a 65 V drain-source breakdown rating, integrated electrostatic discharge (ESD) protection, an internal input matching network that simplifies external PCB matching, and a high thermal conductivity ceramic package. The device is internally matched to 50 ohms at the input, allowing immediate deployment in standard amplifier PCBs without complex matching networks. RoHS compliance and a wide operating junction temperature range suit the part for continuous-duty base-station environments. Typical applications include W-CDMA, LTE, and GSM/EDGE driver and final-stage power amplifiers in macro-cell base stations, repeaters, and high-power laboratory RF amplifiers operating in the 1.8 to 2.0 GHz wireless bands. When using this device, designers should follow NXP application note recommendations for PCB thermal management and bias sequencing. Proper heatsinking with the ceramic flange is essential - thermal resistance from junction to case is in the low single-digit C/W range, but the flange must be mounted to a sufficient copper or aluminum heat spreader. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the NXP datasheet, with values verified against DigiKey, Mouser, and NXP sources as of 2026-10-16.
MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP
The NXP (formerly Freescale) MRF8P20160HSR3 is a single W-CDMA lateral N-Channel enhancement-mode RF power MOSFET rated for 37 W average output power in the 1880-2025 MHz band, supplied in the NI-780S-4 ceramic flanged package. It is specified for 28 V VDD operation with 550 mA quiescent drain current (IDQA), and provides 16.5 dB typical gain at 1.92 GHz. The MRF8P20160HSR3 is the S-prefix variant (200°C Tj, sample-tested) of the MRF8P20160H family intended for cellular base-station amplifier chains. An RF power MOSFET is a laterally-diffused metal-oxide-semiconductor transistor optimized to deliver high RF output power at VHF/UHF/microwave frequencies while maintaining acceptable efficiency and linearity. The device sits in the hierarchy: RF transistor -> power transistor -> discrete semiconductor -> power amplifier building block. In a base-station lineup the MRF8P20160HSR3 typically operates as the final-stage or driver PA, converting DC power into modulated RF energy while the system controller handles Doherty combining, bias sequencing and digital predistortion. Key specifications include 1880-2025 MHz operating band, 37 W average output power (single-carrier W-CDMA), 28 V drain supply, 16.5 dB power gain at 1.92 GHz, and -0.5 dB AM-AM compression at rated Pout. The device also integrates ESD protection, simplified biasing, and broadband matching tolerance suitable for Class AB or Class C operation across common cellular modulation formats. The MRF8P20160HSR3 uses NXP's HV8 lateral MOSFET process technology, providing high breakdown voltage and a thermally-enhanced ceramic NI-780S-4 package. This package is designed for direct screw-down mounting to a heatsink with low thermal resistance, enabling continuous CW and pulsed operation in demanding base-station thermal environments. Typical applications include W-CDMA, LTE and TD-SCDMA base-station power amplifiers in the 1.88-2.025 GHz band, Doherty final-stage amplifiers for macro-cell radios, and broadband driver stages for higher-power push-pull configurations. The part is well matched to standard cellular PA reference designs and works with NXP evaluation fixtures characterized at 2025 MHz. When designing with this device, careful attention to the PCB layout, ground-plane continuity, and harmonic-filter design is required to meet spectral-emission masks. Use of NXP's MRF8P20160H datasheet application notes is recommended for Doherty amplifier implementation, bias sequencing and thermal management guidance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping RF engineers select the right part faster.
MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP
The NXP (formerly Freescale) MRF8P20161HSR3 is a single W-CDMA lateral N-channel RF power MOSFET designed for cellular base station applications covering 1880 MHz to 2025 MHz with 37 W average output power at 28 V supply. Housed in an NI-780S-4 (NI-780HS-4) ceramic-air-cavity package, this RF MOSFET delivers 16.4 dB gain at 1.92 GHz and supports Class AB and Class C operation across all standard cellular base station modulation formats including W-CDMA, LTE, and multi-carrier GSM. An RF power MOSFET (Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete transistor optimized for high-frequency power amplification in the megahertz-to-gigahertz range. Within the broader semiconductor taxonomy, this device sits in the hierarchy: RF MOSFET -> RF power transistor -> discrete semiconductor -> power amplifier building block. The 'lateral' N-channel architecture uses current flow parallel to the silicon surface, which is the preferred geometry for GHz-range power devices because it minimizes parasitic capacitances and enables high breakdown voltage in a compact die. Key specifications include a 28 V drain supply, 550 mA quiescent drain current (Idq), 16.4 dB small-signal gain at 1.92 GHz, and a surface-mount ceramic package rated for the thermal demands of continuous base-station duty. The device's high gain and broadband matching network tolerance reduce the bill of materials in the RF chain by minimizing driver-stage gain requirements. Lateral MOSFET construction also provides excellent thermal stability under W-CDMA envelope modulation where peak-to-average ratios approach 10 dB. Typical applications include W-CDMA, LTE, and multi-carrier GSM base station power amplifiers, repeaters and boosters operating in the 1880-2025 MHz bands, digital pre-distortion (DPD) feedback loops, and aerospace or defense RF transmitter subassemblies. The 28 V supply rail and 37 W average power place this part firmly in the macro-cell base station class where Doherty PA topologies and high-efficiency envelope tracking are common. When designing with this part, designers must observe proper RF load-pull matching, adequate base-plate cooling, and 50-ohm system impedance at the package reference plane. The ceramic NI-780S-4 package requires screw-down mounting with proper torque to maintain the thermal and electrical ground path - improper mounting rapidly degrades output power and reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet for engineers sourcing RF power transistors for cellular infrastructure.
MRF8P20165WHSR5 - 165W RF Power LDMOS | NXP | Base Station
The NXP Semiconductors MRF8P20165WHSR5 is a single W-CDMA lateral N-channel RF power MOSFET designed for base station applications requiring wide instantaneous bandwidth across 1880 to 2025 MHz. The device delivers 37 W average output power and is rated for 165 W peak power, housed in the NI-780S-4 ceramic package with tape-and-reel packaging. It operates from a 28 V supply rail, drawing 550 mA under test conditions and delivering 14.8 dB gain at the operating frequency point. An RF power LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) transistor is a type of power MOSFET specifically engineered for high-frequency, high-power amplification. LDMOS devices occupy the power amplifier (PA) niche in the RF signal chain, sitting between the driver stage and the antenna in cellular base stations, broadcast transmitters, and industrial RF generators. They are valued for high breakdown voltage, excellent thermal performance, and high gain/density at RF frequencies. Key features of the MRF8P20165WHSR5 include its dual-channel LDMOS architecture (FET RF 2CH), 65 V drain-source voltage rating, and operation across 1.98 GHz to 2.01 GHz (test point) with usable bandwidth from 1.88 GHz to 2.025 GHz. The device achieves 14.8 dB gain at 28 V Vdd test conditions, providing sufficient drive margin for Doherty amplifier topologies. The NI-780S ceramic flange package offers a low thermal-resistance path to the system heatsink, essential for sustained CW and W-CDMA operation at full rated output. Technically, the MRF8P20165WHSR5 uses NXP's HV8 LDMOS process generation, which optimizes the trade-off between breakdown voltage, output capacitance, and ruggedness under mismatch. The W-CDMA specification (peak-to-average ratio of approximately 9.5 dB at 0.01% CCDF) drives the design toward high peak power capability with thermal capacity to absorb the resulting average dissipation. Two parallel transistor sections on a single die provide the 165 W peak envelope capability required for 3G base station lineups. Typical applications include W-CDMA, LTE, and multi-carrier GSM base station power amplifiers in the 1880-2025 MHz band, covering DCS-1800, PCS-1900, and UMTS-2000 allocations. The device is also deployed in RF signal generators and industrial heating systems. Designers typically configure it in a Doherty amplifier for high-efficiency operation, with driver-stage predistortion to linearize the W-CDMA envelope. When designing with this part, pay close attention to lead-to-flange flatness for proper heatsink mating, and follow NXP's application notes on input/output matching network topology for the 1.88-2.025 GHz band. The discontinued lifecycle status means designers should verify last-time-buy inventory and consider the R3 (larger reel) variant MRF8P20165WHSR3 as a drop-in substitute. This page synthesizes distributor pricing, same-brand drop-in alternatives (MRF8P20165WHR3, MRF8P20165WHSR3, AFT18S230SR5), and practical design notes that go beyond the manufacturer datasheet's typical-application circuit.
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
The NXP MRF8P23080HSR3 (originally Freescale Semiconductor) is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA and LTE base-station power amplifiers operating from 2300 MHz to 2620 MHz. Housed in an NI-780S-4L air-cavity ceramic package, the device is rated at 28 V drain bias, delivers 16 W average output power with a typical gain of 14.6 dB at 2.3 GHz, and is intended for Class AB and Class C amplifier topologies across cellular base-station modulation formats. A Radio Frequency Power MOSFET (RF Power MOSFET) is a discrete transistor specifically engineered to amplify high-frequency signals at power levels far beyond what small-signal RF transistors can deliver. Architecturally it sits within the broader taxonomy: MOSFET -> power MOSFET -> RF power transistor -> base-station PAs; it is the workhorse of macro-cell transmitter chains where linearity, gain and ruggedness determine link capacity. Key electrical features include a 65 V drain-source breakdown rating, a quiescent bias of 280 mA at 28 V for gain and linearity optimisation, 14.6 dB typical power gain at 2.3 GHz, and operation across the 2300-2400 MHz band with extension to 2620 MHz. The device is supplied in the NI-780S-4L industry-standard air-cavity ceramic package with a flange-mount flange for direct bolting to a heatsink or pallet. Lead-free and RoHS-compliant terminations are standard. Internally the MRF8P23080HSR3 uses NXP's high-voltage laterally-diffused metal-oxide-semiconductor (LDMOS, dual) process, which combines a low on-resistance with high breakdown voltage and excellent gain at 2.3 GHz. The same die is offered as MRF8P23080HR3 in the NI-780H-4L bolt-down variant, allowing designers to switch packages without re-tuning the RF match. Typical applications include W-CDMA, LTE, and TD-LTE macro-cell base-station Doherty final stages, S-band pulsed radar transmitters, and high-power driver stages feeding a larger final-stage LDMOS pallet. The part is recommended for linear Doherty single-carrier W-CDMA service where the average power is pushed toward P3dB compression under PAR-reduced waveforms. Designers should select output-matching networks that present the optimum load-line at 2300-2400 MHz while keeping harmonic terminations short to ground, and must provide adequate bolt-down torque on the NI-780S-4L flange to keep the thermal resistance (Rthjc) within the datasheet envelope. This page consolidates distributor pricing, pin-equivalent same-brand variants, and Doherty amplifier design considerations not aggregated on a single manufacturer or distributor page.
MRF8P23080HSR5 - 80W RF MOSFET 2.3GHz W-CDMA/LTE | NXP
The NXP MRF8P23080HSR5 is a single W-CDMA and LTE lateral N-Channel RF power MOSFET designed for operation across the 2300-2400 MHz band, delivering 16 W average output power and 80 W peak, housed in the NI-780S-4L air-cavity ceramic package. It is engineered for base-station and small-cell RF power amplifier applications in the wireless-infrastructure market where high efficiency and rugged linearity are required. An RF power MOSFET is a specialised discrete semiconductor that converts DC supply energy into a high-frequency RF output signal with gain and acceptable linearity. The MRF8P23080HSR5 belongs to the lateral N-Channel MOSFET family, optimised so that the carrier transit path sits parallel to the silicon surface, which minimises parasitic capacitances and improves high-frequency gain and efficiency compared with vertical-diffusion MOSFETs. It sits within the broader HV8 generation of NXP Airfast RF power devices. Key features include 14.6 dB typical power gain, 50 V drain-to-source breakdown support with the recommended 28 V nominal operating drain supply, and operation from 2300 to 2400 MHz. The device is biased at low quiescent current for Class AB operation and is rated for W-CDMA and LTE downlink waveforms where high peak-to-average ratios must be handled without excessive gain compression. The device uses NXP's seventh-generation Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology, which delivers high gain, high drain efficiency, and excellent thermal performance. The Airfast NI-780S-4L package provides a low-inductance copper-flanged ceramic body that simplifies PCB-to-flange mounting and improves thermal transfer to the system heatsink, while the internally matched input simplifies driver-stage design. Typical applications include 4G LTE and W-CDMA base-station power amplifiers, small-cell and femtocell transmitters, and repeater/boosted-coverage infrastructure. It is also used in military and industrial RF amplifier modules that require broadband efficiency above 2 GHz. When integrating this MOSFET, ensure that the drain supply rail incorporates proper RF decoupling and that the PCB thermal path provides a low thermal-resistance mounting interface to a heatsink or cold-plate. Designers should also bias the gate with a regulated negative or positive bias network that prevents thermal runaway and preserves the device's safe operating area. This page synthesises distributor pricing, drop-in alternative guidance and practical thermal and layout notes that complement the manufacturer datasheet and accelerate part selection for 2.3-2.4 GHz RF power designs.
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
The NXP MRF8P26080HSR3 is a single W-CDMA and LTE lateral N-channel RF power MOSFET rated for 14 W average output power across the 2500–2700 MHz band with a 28 V supply rail. Housed in an NI-780S-4 ceramic package, the device is built on NXP's 8th-generation (Gen8) high-voltage LDMOS process and is targeted at cellular base-station final-stage and driver amplifier applications. It delivers 80 W peak CW power capability and supports both Class AB and Class C operation, making it suitable for Doherty, push-pull, and single-ended amplifier topologies. Gen8 N-channel enhancement-mode lateral MOSFETs represent the leading edge of silicon RF power technology, sitting above Gen6/Gen7 parts in efficiency and bandwidth for cellular infrastructure. Within the cellular base-station RF signal chain, this device sits between the transceiver exciter (where small-signal LDMOS or GaAs devices operate) and the antenna feed network, delivering the high-power RF energy that ultimately reaches the antenna element. Its lateral geometry provides stable gain, excellent thermal performance, and consistent large-signal behavior when used in Doherty amplifier configurations that dominate modern 4G LTE and 5G NR radios. Key features include 14 W average output power at 2.6 GHz, 80 W peak envelope power for high-PAR signals, and a wide operating bandwidth that covers the entire 2.5–2.7 GHz LTE band. The device is characterized in a typical Doherty single-carrier W-CDMA test fixture, simplifying reference designs. The NI-780S-4 ceramic air-cavity package offers a low-inductance flange-mount footprint with gold-plated leads and excellent heat dissipation through the package base. Technically, the MRF8P26080HSR3 uses lateral N-channel LDMOS architecture on the Gen8 process, which trades absolute RF power density for superior efficiency, gain, and ruggedness versus older silicon technologies. It offers high drain efficiency when used in Doherty peaking/peak amplifier configuration, and the device is also robust enough for many commercial pulsed avionics and tactical-radio front-end designs. Typical applications include W-CDMA and LTE cellular base stations using Doherty or single-ended PA topologies, 2.5–2.7 GHz 4G LTE small-cell and micro-cell power amplifiers, 5G NR (band n41, n38, n40) high-power driver amplifiers, TDD transmitter final stages, RF-link and tactical-radio power amplifiers in commercial and industrial systems, and industrial-scientific RF heating applications operating in the 2.45–2.7 GHz ISM band. When designing with this part, pay close attention to PCB material selection (low-loss Rogers RO4350 or similar recommended), thermal mounting torque sequence per NXP application notes, and DC bias sequencing. Use a regulated 28 V supply with proper in-rush current limiting and gate-bias network per the reference design to prevent parametric drift. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical thermal/RF design notes not consolidated in the manufacturer datasheet.
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF8P9040NR1 is a 40 W average, 728-960 MHz lateral N-channel enhancement-mode RF power MOSFET designed for cellular base-station power amplifiers. Housed in an air-cavity TO-272 WB-4 (overmold plastic variant) package, it operates from a 28 V DC supply and delivers 19.1 dB gain at 960 MHz with CW and modulated (CDMA, W-CDMA, LTE) drive, with a typical P1dB of roughly 4 W average power. A lateral N-channel enhancement-mode RF power MOSFET is a transistor whose conducting channel is formed at the surface of a silicon die and whose carrier concentration is increased by applying a positive gate-to-source voltage. This structure gives RF designers a high-frequency, high-power gain block that scales linearly when driven in Class AB and is rugged enough for Class C cellular modulation formats. RF power MOSFETs belong to the broader discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> RF power MOSFET -> base-station PA transistor -> semiconductor device. Key features include broadband 728-960 MHz coverage in a single part, 28 V supply operation that simplifies gate-bias design, integrated ESD protection, high peak-to-average ratio tolerance suited to LTE multi-carrier signals, and an air-cavity ceramic-style package (overmolded WB-4) that provides a low thermal-resistance path from die to heatsink. The lateral architecture supports high gain (19.1 dB at 960 MHz) without sacrificing ruggedness against load VSWR mismatch. The die uses NXP's HV8 lateral MOSFET process technology, optimized for cellular infrastructure PA stages. The drain is on the package flange for direct bolt-down heatsinking; the gate and source are wire-bonded through the package leads. The internal matching networks at the input and output of the reference design simplify board-level integration into Doherty or single-ended PA lineups. Typical applications include 700-1000 MHz cellular base-station PAs, CDMA/W-CDMA/LTE driver and final stages, repeaters, and broadband industrial/scientific RF power amplifiers. Designers use it as the final-stage transistor in macro base stations or as a driver for higher-power MRF8PxxxNR1 siblings in multi-way Doherty configurations. When designing with this part, mount the flange directly to a copper or aluminum spreader with proper thermal compound. Maintain drain-supply decoupling close to the lead, and bias the gate from a sequenced voltage control set that ramps drain first, then gate, to avoid device stress. This page synthesizes real distributor pricing, drop-in pin-compatible alternatives, and practical PA design notes not collected in the manufacturer datasheet, helping RF engineers evaluate and source the part quickly.
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
The NXP MRF8S18120HR3 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for GSM and GSM EDGE cellular base station power amplifiers operating from 1805 to 1880 MHz, delivering 72 W CW output power at 28 V in a 3-pin NI-780H ceramic package. An RF power LDMOS transistor is a specialized MOSFET fabricated with a laterally-diffused drain structure on a silicon die, optimized for high-frequency, high-power RF amplification. LDMOS technology forms part of the broader RF power semiconductor hierarchy (LDMOS -> RF power MOSFET -> RF power transistor -> discrete semiconductor) and dominates cellular base station PA stages because of its high drain efficiency, broadband gain, and ruggedness into high VSWR loads. Key electrical characteristics include a frequency range of 1805-1880 MHz, 18.2 dB typical power gain at 1.81 GHz, 72 W CW output power capability, a 28 V typical operating drain voltage, and a 65 V drain-source breakdown rating. The part is specified for class AB and class C operation across standard cellular modulation formats and is designed with internal matching to simplify PCB layout. Test conditions in the datasheet use 800 mA quiescent current and 28 V Vdd. The MRF8S18120HR3 uses NXP's eighth-generation HV8 LDMOS process, which improves thermal performance versus earlier LDMOS generations and enables higher power density at 1.8 GHz. Its NI-780H ceramic package provides low thermal resistance and is optimized for high-volume, flangeless PCB mounting with screw-down heatsinking. Typical applications include GSM and GSM EDGE macro base station final-stage PAs, micro/pico base station RF power stages, and 1.8 GHz-band industrial RF power amplifiers requiring high gain and rugged operation. Designers should bias the device in class AB for linear GSM EDGE operation with proper heatsinking for the NI-780H flange and follow NXP's reference design evaluation PCB layout to achieve rated gain and efficiency at 1.81 GHz. This page synthesizes distributor pricing, verified drop-in same-package alternatives, and practical RF design notes that go beyond the manufacturer datasheet to help RF engineers select and source this part quickly.
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
The NXP MRF8S18120HSR3 is a 72 W CW N-channel enhancement-mode lateral MOSFET (LDMOS) designed for cellular base station power amplifiers covering the 1805-1880 MHz GSM and GSM EDGE bands. Packaged in the NI-780S ceramic flanged package, the device is specified at VDD = 28 V, IDQ = 800 mA, with 18.2 dB typical power gain and operates to 65 V drain rating. An RF power LDMOS transistor is a lateral double-diffused MOSFET optimized for high-frequency, high-power amplification in the 1 MHz to 3 GHz range. It belongs to the broader hierarchy of RF power transistors -> power transistors -> discrete semiconductors -> semiconductors. LDMOS devices replaced older bipolar and Si LDMOS technology in cellular base stations because they offer high gain, high efficiency, excellent thermal performance, and simplified biasing compared to bipolar junction transistors (BJTs). Key features of the MRF8S18120HSR3 include 18.2 dB typical gain at 1.81 GHz, support for Class AB and Class C operation across all common cellular modulation formats, an integrated ESD protection structure, and NiPdAu-plated ceramic packaging for high-reliability surface-mount reflow assembly. The NI-780S package provides a low-inductance, low-thermal-resistance footprint suited to high-power pulsed and CW operation. The lateral device geometry uses an N-channel enhancement-mode structure built on a silicon substrate with a high-resistivity epitaxial layer, providing high breakdown voltage and ruggedness into load-mismatch conditions typical of cellular antenna networks. At 28 V operation the device achieves high efficiency in Doherty and push-pull amplifier topologies used for modern macro-cell and micro-cell base stations. Typical applications include GSM and GSM EDGE macro-cell base-station final-stage power amplifiers, WCDMA/LTE 1800 MHz driver stages, industrial RF heating, and high-power 1.8 GHz pulsed amplifiers. Its 72 W CW rating also makes it useful in DVB-T or other OFDM service transmitters operating in the same band. When designing with this part, pay close attention to heat dissipation. A heatsink with sufficient thermal mass is required for continuous CW operation, and matching network design must follow the manufacturer reference design to achieve specified gain and efficiency. Always observe the 65 V drain-source breakdown maximum with adequate headroom margin. This page synthesizes manufacturer datasheet parameters, distributor pricing, drop-in alternatives, and practical RF amplifier design notes not consolidated on the manufacturer datasheet.
MRF8S18260HSR6 - 74W, 1.81GHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF8S18260HSR6 is a high-power N-channel RF power MOSFET rated at 74W output in the 1.805 GHz to 1.88 GHz band, housed in an NI-1230S (SOT-1110B / Case 375J-02) cavity package optimized for surface-mount base-station and industrial RF applications. It is specified at 30V operation with 1.6A DC current handling and delivers a typical in-band gain of 17.9 dB per the NXP product literature, making it suitable for the output stage of high-power Doherty, push-pull, or single-ended transmitter chains in the 1800 MHz cellular / DCS / LTE band. An RF power MOSFET is a discrete lateral or vertical transistor whose drain-source channel is optimized for large-signal radio-frequency amplification rather than low-frequency switching or analog signal conditioning. Within the broader semiconductor taxonomy, the MRF8S18260HSR6 belongs to the family of RF power transistors -> discrete MOSFETs -> discrete semiconductors, sharing its lineage with cellular-infrastructure and broadcast amplifier stages where peak envelope power, gain linearity, and ruggedness under mismatch are critical design constraints. Key features include a 65V drain-source breakdown rating, a saturated output of 260W pulsed per the MRF8S18260 part family designation, and NXP's Ni-1230 ceramic-packaged flange intended for low-inductance PCB or heatsink mounting. Internally the device is a push-pull pair of N-channel LDMOS-style RF cells; the 'H' suffix indicates an unmatched input, allowing the engineer to build his own input-matching network for arbitrary frequencies and bandwidths within the 1.805 to 1.88 GHz window. Typical applications include base-station power amplifiers in GSM/EDGE, TD-SCDMA, and small-cell LTE transmitters, where the part typically sits behind a driver stage and feeds into an external isolator, circulator, or harmonic filter. The high gain reduces driver-stage bill of materials, while the Ni1230 package offers repeatable thermal performance and easy drop-in mechanical replacement on the heatsink or pallet. When designing with this part, derate carefully at high VSWR: the datasheet specifies mismatch tolerance at rated power and the engineer should verify bias, gate-voltage sequencing, and thermal resistance on the application-specific board stack-up. Use NXP's reference designs and the Freescale/NXP application notes for matched-circuit starting values, because the unmatched input leaves many degrees of freedom that must be constrained by simulation.