MOSFETs
Produtos (1294)
MRF6VP11KHR5 - 1000W 50V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6VP11KHR5 is an N-channel enhancement-mode lateral MOSFET designed as an RF power field-effect transistor for very-high-voltage pulsed wideband applications up to 150 MHz, delivering 1000 W of RF output power from a 50 V supply. Housed in the NI-1230 ceramic package, the device is factory-unmatched and is intended for use as the final or driver stage in industrial, medical, and scientific pulsed RF systems where high peak power and ruggedness under mismatch are required. RF power MOSFETs are specialized lateral MOSFETs optimized for high-frequency, high-power switching rather than low-voltage digital logic. The MRF6VP11KHR5 belongs to the NXP VHV6 (very-high-voltage, 6th generation) RF power family, characterized by a 50 V typical operating drain voltage and an 110 V drain-source breakdown that provides the headroom needed for pulse overshoot and load-mismatch transients common in plasma, CO2 laser, and particle-accelerator RF generators. Within the broader hierarchy, the part is a discrete power semiconductor used in power management and RF energy subsystems. Key electrical features include 26 dB typical power gain at 130 MHz, a pulsed output capability to 1000 W peak, 1.8 MHz to 150 MHz operating frequency range, and 50 V drain-source breakdown class. The rugged NI-1230 ceramic-air-cavity package provides low parasitic inductance and exposed ceramic top for through-package cooling, while internal matching networks are intentionally omitted so designers can apply external matching networks tailored to their specific band and load conditions. Typical applications include pulsed CO2 laser tube exciters, plasma-generation RF sources, particle accelerator RF amplifiers, MRI spectroscopy gradient drivers, and industrial heating/drying RF generators. Each of these applications requires multi-hundred-watt peak RF bursts at HF/VHF frequencies with high tolerance to load-VSWR faults, which the part's high breakdown voltage and lateral MOSFET structure support. When designing with this device, ensure the heatsink/thermal spreader contacts the package ceramic top and base and that the drain voltage stays below the rated breakdown under all mismatch conditions. Always operate the device in pulsed (not CW) mode for rated power, and use an external circulator or isolator where load mismatch cannot be otherwise controlled. This page consolidates distributor pricing, drop-in NXP alternatives, package information, and practical design notes beyond the manufacturer datasheet.
MRF6VP121KHR5-FR - 1000W LDMOS RF MOSFET, 965-1215 MHz | NXP
The NXP/Freescale MRF6VP121KHR5-FR is a 1000 W lateral N-channel enhancement-mode LDMOS RF power transistor designed for pulsed applications in the 965-1215 MHz L-band spectrum. Housed in the NI-1230 ceramic package, it provides 21.4 dB gain at 1.215 GHz and operates from a 50 V supply rail, delivering up to 150 mA of quiescent drain current with class-AB or class-C biasing. The "-FR" suffix denotes factory-on-tape-and-reel orientation suitable for high-volume production lines, while the underlying die is identical to the standard MRF6VP121KHR5 variant. An RF power MOSFET is a specialized discrete transistor built on a laterally-diffused metal-oxide-semiconductor process that combines the high breakdown voltage of LDMOS with the high input impedance and ease of biasing characteristic of MOSFETs. Within the RF transistor taxonomy, it sits at the intersection of discrete semiconductors and RF power devices, serving as the final amplification stage in solid-state transmitters where it must deliver hundreds to thousands of watts at radio frequencies while tolerating the large standing-wave-ratio (VSWR) mismatch conditions found in industrial RF heating, particle accelerators, and L-band radar. Compared with bipolar RF power transistors, LDMOS offers higher gain per stage, simpler gate biasing (no negative supply needed for cutoff), and inherent ruggedness under output mismatch. Key feature highlights include 1000 W peak output power at 1.215 GHz, 21.4 dB typical power gain under pulsed conditions, 50 V drain supply, integrated ESD protection, and built-in input-matching networks that simplify external PCB design. The 50 V supply rail enables fewer series combining stages than a 28 V or 32 V LDMOS device, directly reducing combiner losses in high-power systems. The thermal resistance of the NI-1230 ceramic package supports pulsed-operation duty cycles at full rated power with appropriate heatsinking. The transistor's laterally-diffused architecture implements an N-channel enhancement-mode structure that requires only a single-polarity gate bias supply, simplifying system-level design relative to depletion-mode parts. Its intrinsic input impedance supports broadband matching, and the device integrates a number of internal protections (ruggedness against infinite VSWR) that allow safe operation into mismatched loads - a critical requirement for industrial and aerospace applications where antenna behavior is unpredictable. Typical applications for the MRF6VP121KHR5-FR include L-band pulsed radar transmitters operating in the 1030 MHz (secondary surveillance radar/SSR) and 1090 MHz (ADS-B/Mode S) bands, particle accelerator solid-state power amplifiers used in physics and medical isotope production, and industrial RF heating / plasma-generation systems. Its 1000 W pulsed rating also suits long-range air-traffic-control interrogation channels and weather-radar front ends. For thermal design, the application note recommends mounting the device on a copper spreader with thermal compound and ensuring the case temperature stays below the 200 C absolute maximum; for pulsed operation at typical 1-3% duty cycle, no additional heatsink beyond standard RF pallet cooling is normally required. Designers should keep gate and drain leads short and use low-loss PCB substrates such as Rogers RO4350B for the matching-network traces to preserve the 21 dB gain advantage at 1.215 GHz. This page synthesizes distributor stock data and design guidance not found in the manufacturer datasheet alone, including parameter proximity analysis for cross-brand L-band alternatives and practical heatsinking tips for pulsed-operation duty cycles.
MRF6VP121KHR5178 - 1000W LDMOS RF Power MOSFET, NI-1230 | NXP
The NXP MRF6VP121KHR5178 is a 1000 W lateral N-channel LDMOS RF power transistor designed for broadband pulsed RF amplification up to 1.03 GHz and housed in the NI-1230 ceramic flanged package. It delivers 20 dB typical gain at 1.03 GHz from a 50 V supply and is engineered for high-power pulsed applications such as L-band radar, avionics transmitters, and solid-state pulsed RF generators. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET variant that places the drain current laterally under the gate, enabling higher breakdown voltage, higher gain, and excellent thermal stability compared to vertical MOSFETs or bipolar RF transistors. Within the semiconductor hierarchy, LDMOS sits under power MOSFET -> MOSFET -> discrete transistor, and is the dominant technology for high-power RF amplification in commercial and defense pulsed systems above 1 GHz. Key specifications include a 50 V drain-source breakdown rating, 150 mA quiescent drain current, 1.27 pF input capacitance (typical), 86.7 pF output capacitance, and 539 pF reverse transfer capacitance. The device exhibits a common-source N-channel configuration, optimized broadband matching network, and operates across -65C to +200C junction temperature, allowing deployment in harsh-environment military and industrial systems. The MRF6VP121KHR5178 architecture uses NXP's advanced LDMOS process for high ruggedness under VSWR mismatch and high duty-cycle pulsed conditions. Its broadband input/output matching network is internal, simplifying PCB-level integration while maintaining the high efficiency required for pulsed avionics and radar applications. The '178' suffix denotes a specific test/reel variant of the MRF6VP121KHR5 base part. Typical applications include L-band pulsed avionics transmitters, ground-based surveillance radar, industrial RF drying and plasma generators, and broadband scientific RF amplifiers. The NI-1230 ceramic package provides a low-inductance flange mount that bolts directly to a heatsink or cold plate for maximum heat extraction. When designing with this part, ensure the heatsink thermal design keeps the junction below 200C, use proper RF bypass on the drain supply, and provide sufficient gate-bias sequencing to prevent transient SOA violations at turn-on. This page consolidates distributor pricing, verified parametric data, and same-family drop-in alternatives to help RF power designers source, evaluate, and integrate the MRF6VP121KHR5178 faster than scanning multiple distributor pages.
MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP
The NXP Semiconductors MRF6VP21KHR5 is a very-high-voltage (VHV6) N-channel enhancement-mode RF power transistor housed in a 5-pin NI-1230 ceramic flanged package. Designed primarily for pulsed wideband applications, it is rated for operation up to 235 MHz and delivers 1000 W of output power in a 50 V supply rail with 24 dB nominal power gain. The device is built on NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process, which is the industry reference for high-power RF amplification in industrial, scientific, and medical (ISM) applications. An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver large amounts of radio-frequency power with high gain and efficiency. Within the broader taxonomy, this device sits at: RF MOSFET -> RF power transistor -> discrete semiconductor -> power management component. LDMOS technology, in particular, dominates base-station and pulsed-power amplifier designs above 100 MHz because it offers a superior gain-bandwidth product and high breakdown voltage when compared to earlier bipolar RF transistors. Key features of the MRF6VP21KHR5 include a drain-source breakdown of 110 V, typical pulsed output power of 1000 W at 235 MHz, 24 dB nominal gain in a 50 V common-source test circuit, and an unmatched input/output that allows the designer to optimize matching networks for the specific frequency band. The NI-1230 ceramic package provides a low-thermal-resistance path to the heatsink, supporting the high peak power dissipation typical of pulsed RF service. The device is specified for operation up to a maximum junction temperature consistent with 225 °C packaging ratings, with peak reflow temperature (260 °C) tolerance to 40 s. Typical applications include pulsed wideband amplifiers in the 1–235 MHz range, particle accelerator drivers, MRI RF power stages, plasma-generation RF generators, and high-power industrial/scientific RF sources. Because the device is unmatched, the designer can tailor the input and output matching networks to the exact operating frequency and required bandwidth of the system. When designing with the MRF6VP21KHR5, ensure the heatsink and mounting torque follow NXP application notes for the NI-1230 flange - improper mounting is the leading cause of premature thermal failure. Operate strictly below the maximum drain voltage and within the safe operating area (SOA) to avoid secondary breakdown during pulse droop.
MRF6VP2600HR5-FR - 600W LDMOS RF MOSFET 2-500MHz | Freescale
The Freescale (NXP) MRF6VP2600HR5-FR is a 600 W lateral N-channel enhancement-mode LDMOS RF power MOSFET designed for broadband applications from 2 MHz to 500 MHz, housed in the NI-1230 ceramic flange package. It operates at a 50 V drain supply, delivers 25 dB typical power gain at 225 MHz, and is rated for 600 W CW output in broadcast and industrial RF amplifier service. The "-FR" suffix denotes a factory-reeled variant supplied on a tape-and-reel carrier. An RF power MOSFET is a discrete transistor optimized for high-frequency, high-power amplification in the megahertz to gigahertz range. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for high-power RF amplification below ~3 GHz due to its high breakdown voltage, excellent thermal performance, and simplified broadband matching compared to bipolar devices. Within the power-management hierarchy, RF power MOSFETs sit between small-signal RF transistors and vacuum tubes, serving as the active output stage in solid-state transmitters. Key features of the MRF6VP2600HR5-FR include a 50 V drain-source breakdown rating that supports 48 V rail operation with margin, a 2.6 A continuous drain current capability, an unmatched input that enables flexible broadband matching networks, and a low thermal-resistance ceramic flange (NI-1230) for direct chassis mounting. The device is engineered to operate class AB or class C for maximum efficiency depending on linearity requirements. The MRF6VP2600HR5-FR uses a laterally diffused MOS structure that places the source, gate, and drain contacts on the top surface, allowing gold-metallized bond-wire or ribbon attachment from the die to the flange leads. Its ceramic NI-1230 package provides excellent heat transfer from the die to an external heatsink, while the flange isolation (or non-isolation, depending on the variant) simplifies mechanical mounting in transmitter modules. Typical applications include VHF/UHF broadcast transmitters, industrial scientific and medical (ISM) band amplifiers around 27 MHz and 81 MHz, FM broadcast linear amplifiers, two-way land-mobile radio base stations, and pulsed radar driver stages. Designers must pair it with a properly designed broadband matching network, low-loss combiner, and adequate heatsinking. When designing with this part, ensure the matching network provides the documented 50 ohm load-pull impedance while keeping the gate bias below the 20 V maximum rating. Use of a sequenced gate-bias supply (e.g., -5 V then +5 V) protects the oxide during thermal swings.
MRF6VP3091NBR1 - 90W 470-860MHz LDMOS RF Power Transistor | NXP
The NXP MRF6VP3091NBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor designed for broadcast and commercial aerospace broadband applications from 470 MHz to 1215 MHz, delivering 18 W output at 860 MHz with 22 dB gain and a 50 V supply rail in a TO-272 WB-4 over-molded plastic package. The -B suffix denotes the tape-and-reel packaging variant optimized for high-volume SMT assembly. An RF power LDMOS transistor is a specialized power MOSFET built on a laterally-diffused metal-oxide-semiconductor process that integrates the high input impedance of a MOSFET with the rugged high-voltage, high-current capability needed for RF amplification. Within the broader taxonomy, the MRF6VP3091NBR1 sits in the LDMOS family, which belongs to RF power transistors, which in turn belong to discrete power semiconductors and ultimately to active electronic components. LDMOS devices dominate UHF/VHF broadcast transmitter final stages because they offer high gain, excellent thermal stability, and broadband capability compared to bipolar or GaN alternatives in their power class. Key features include 90 W peak envelope power capability, 22 dB typical power gain at 860 MHz, 50 V drain supply operation, integrated ESD protection, and gold metallization for long-term reliability. The device is optimized for DVB-T, ATSC, and analog broadcast transmitter final stages, with broadband matching supporting 470-860 MHz UHF TV bands. Internally input-matched for ease of design and broadband operation, the MRF6VP3091NBR1 reduces external matching component count versus legacy bipolar parts. The LDMOS architecture uses a laterally-diffused drift region to support the high drain voltage while maintaining low on-resistance and high switching speed. NXP's generation-6 LDMOS process delivers high efficiency (~31% typical at 860 MHz) and excellent thermal performance through the TO-272 WB-4 over-molded plastic package, with an operating junction temperature up to 200 C and a plastic MO-217 style body that simplifies board mounting versus ceramic flanged parts. Typical applications include UHF TV transmitter final stages (470-860 MHz DVB-T/ATSC), commercial aerospace broadband amplifiers, industrial RF heating, and scientific particle accelerator RF sources. The wide broadband response makes the device a versatile final-stage amplifier for multi-band broadcast transmitters where one part covers the entire UHF band without band-switching. When designing with this device, ensure adequate thermal management: with 90 W peak RF output and ~31% drain efficiency, approximately 200 W of waste heat must be dissipated. Use a copper heatsink or cold plate with forced air cooling to maintain junction temperature below the maximum rating. Always sequence the gate bias (VGS) before applying drain voltage (VDD) to prevent uncontrolled current surges during startup. This page synthesizes distributor pricing, same-package and cross-package alternatives, parametric comparison, and practical RF design notes not found in the manufacturer datasheet alone. Engineers can evaluate drop-in drop-out options for hard-to-source or end-of-life broadcast RF transistors.
MRF6VP3450HR6 - 860 MHz 450W RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6VP3450HR6 is a 50 V, 860 MHz N-Channel Enhancement-Mode Lateral RF Power MOSFET delivering 22.5 dB gain and 450 W output power in a NI-1230 ceramic package. Designed for broadband commercial and industrial transmitter applications, it operates across the 470 to 860 MHz UHF band, making it a drop-in power device for DVB-T, ATSC, and analog TV transmitter final stages. The high gain and broadband performance suit large-signal common-source amplifier topologies used in 50 V analog or digital television transmitter equipment. A lateral-diffused MOS (LDMOS) power transistor is a specialized MOSFET optimized for RF power amplification rather than low-frequency switching. LDMOS devices achieve high breakdown voltage, high gain, and excellent thermal performance by laterally diffusing the drain region under the gate oxide. Within the broader hierarchy of power transistors, LDMOS sits between traditional silicon MOSFETs and GaN HEMTs in capability, dominating the UHF/VHF broadcast and cellular infrastructure market where 50 V operation is standard. Key specifications include 50 V drain-source rating, 22.5 dB typical power gain at 860 MHz, 450 W CW output power, 1.4 A typical quiescent bias current, and broadband performance from 470 to 860 MHz. The lateral N-channel enhancement-mode structure enables simple class-AB biasing with a single positive gate supply. The NI-1230 ceramic package provides a low thermal resistance path and is bolt-down compatible with industry-standard broadcast RF pallets. Typical applications include DVB-T/DVB-T2 UHF TV transmitter final stages, ATSC digital television transmitters, analog VHF/UHF broadcast amplifiers, industrial RF heating sources at 860 MHz, and broadband RF generator instrumentation. The MRF6VP3450HR6 is also used as a driver for higher-power UHF broadcast pallets in stacked amplifier configurations. When designing with this part, ensure adequate heat-sinking through the bolted flange and maintain proper output load network matching for the target band. The MRF6VP3450HR6 requires a regulated 50 V drain supply and a low-noise gate bias supply; designers should sequence gate voltage before drain voltage to prevent thermal runaway during startup. This page synthesizes NXP datasheet specifications, parametric alternatives, and application design considerations for the MRF6VP3450HR6, providing engineering context beyond the manufacturer datasheet.
MRF6VP3450HSR5 - 450W RF Power LDMOS, 470-860 MHz | NXP
The NXP MRF6VP3450HSR5 is a 450 W RF power LDMOS field-effect transistor designed for broadband commercial and industrial applications in the 470 to 860 MHz UHF band, supplied in the NI-1230-4S ceramic/bolt-down chassis-mount package. The device is an N-channel enhancement-mode lateral MOSFET specified for 50 V operation, with a 22.5 dB typical power gain and 110 V minimum drain-source breakdown. It delivers rated output power of 450 W at the 860 MHz band edge, with an additional pulsed rating of 90 W available from a separate variant listing. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) FET is a specialized power transistor designed for high-frequency, high-power amplification. Unlike small-signal MOSFETs used in logic or low-power analog, RF power LDMOS devices use a lateral structure on a silicon die to combine high breakdown voltage, high gain, and good thermal performance in a single robust package. They belong to the broader hierarchy: RF power transistor -> power semiconductor -> discrete semiconductor, and dominate UHF/VHF broadcast, mobile-radio, and industrial-scientific-medical (ISM) power amplifier stages because of their excellent gain linearity and ruggedness under VSWR mismatch. The MRF6VP3450HSR5 provides 22.5 dB typical gain at 860 MHz, with broadband performance suitable for both analog and digital television transmitter PA stages. The device is optimized for common-source class-AB operation and is rated for continuous-wave (CW) as well as pulsed signal formats. Internally matched partially for ease of use, the transistor integrates ESD protection and is designed for long-term reliability at elevated flange temperatures typical of broadcast service. Typical applications include UHF digital TV transmitter final stages (DVB-T, ATSC, ISDB-T), analog TV transmitter PAs in the 470-860 MHz band, industrial RF heating and plasma drivers, and broadband general-purpose amplifiers for scientific instrumentation. The wide bandwidth also makes it suitable for multi-channel combiner systems used in shared transmitter facilities. When designing with the MRF6VP3450HSR5, allocate a substantial copper or spreader heat sink and ensure the bolt-down flange is mounted with proper torque and thermal compound. The drain bias should be applied through a sequenced supply to prevent in-rush currents, and the input/output matching networks must be tuned for the specific frequency sub-band within 470-860 MHz to achieve rated gain and efficiency. A circulator or isolator is recommended at the output to protect the device from load VSWR transients. This page consolidates distributor inventory, datasheet references, and design guidance for engineers evaluating or sourcing the MRF6VP3450HSR5 for UHF power amplifier designs - information not present on a single distributor or manufacturer page.
MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP
The NXP MRF6VP41KHR5 is a lateral N-channel broadband RF power MOSFET designed for high-power VHF/UHF applications. Operating from 10 MHz to 500 MHz at 50 V, the device delivers 1000 W of output power with a 20 dB power gain at 450 MHz in the NI-1230 ceramic package. It is optimized for pulse and continuous-wave (CW) wideband operation. An RF power MOSFET is a specialized lateral double-diffused metal-oxide-semiconductor transistor engineered to deliver high RF output power at frequencies ranging from HF through UHF. The MRF6VP41KHR5 belongs to NXP's RF Power Discrete portfolio (N-channel lateral MOSFETs), which sits within the broader power management and discrete semiconductor hierarchy. It is purpose-built for industrial, scientific, and medical (ISM) bands, broadcast, and aerospace/defense pulsed-RF systems where high peak power and ruggedness are required. Key specifications include a 50 V drain-source breakdown rating, 150 mA quiescent drain current at idle, 20 dB typical power gain, and 1000 W CW output power. The device supports broadband operation from 10 MHz to 500 MHz, providing flexibility for multi-band transmitters. Its NI-1230 ceramic package provides low thermal resistance for sustained high-power operation. The transistor employs NXP's high-voltage lateral MOSFET process technology, which integrates a thermally robust die and internal matching networks optimized for broadband gain. Built-in ESD protection and high drain-source voltage tolerance enhance reliability under mismatched-load conditions. The lateral architecture delivers higher breakdown voltage and better linearity than comparable vertical MOSFETs. Typical applications include 1000 W pulsed-RF amplifiers for industrial heating, particle accelerators, and radar transmitters operating in the 100-500 MHz range. It is also used in VHF/UHF broadcast amplifiers and high-power broadband jamming/communications systems. When designing with the MRF6VP41KHR5, ensure adequate heat-sinking through the package flange; the device dissipates significant power at 1 kW output. Bias sequencing and drain-Voltage protection must follow NXP application note guidelines for VHV6-series devices. This page consolidates distributor pricing, drop-in alternates, and engineering notes not aggregated in the NXP datasheet, providing additional value for procurement and RF design teams.
MRF6VP41KHR7 - 450MHz 1000W RF Power MOSFET | NXP
The NXP MRF6VP41KHR7 is a dual-channel, N-channel enhancement-mode lateral MOSFET designed for very-high-voltage pulsed RF power applications up to 450 MHz. It delivers 1000 W of pulsed output power with 20 dB gain at 50 V test voltage and 150 mA bias current, housed in the NI-1230 ceramic package. The device is specifically designed for use in industrial, medical, and scientific pulsed wideband applications with operating frequencies from 10 MHz to 500 MHz. RF Power MOSFETs are specialized transistors built to deliver high RF power levels to a 50-ohm load, typically used in the final stage of a transmitter chain. They are categorized under the broader family of power transistors, which includes BJTs, LDMOS, and GaN devices. Within the LDMOS family, the MRF6VP41KHR7 belongs to NXP's VHV6 (very-high-voltage, 6th generation) platform targeting pulsed applications at voltages up to 110 V. The lateral MOSFET structure provides high breakdown voltage, low thermal resistance, and excellent gain flatness across the operating band. Key electrical features include a 110 V drain-source voltage rating (Vds), 50 V test bias for 1000 W pulsed output, 20 dB typical gain, and unmatched input/output that allows flexibility in external matching network design. The NI-1230 package is a high-performance ceramic flange-mount construction providing low thermal resistance and robust mechanical mounting suitable for high-power pulsed amplifiers. The MRF6VP41KHR7 utilizes NXP's 6th-generation high-voltage LDMOS process, which integrates drain-to-source breakdown protection, ESD protection, and a source-connected metal flange for direct heatsink attachment. The lateral geometry supports very high breakdown voltage with low parasitic capacitances, enabling high drain efficiency in Class AB or Class C pulsed amplifier topologies. Typical applications include pulsed radar transmitters, MRI RF power amplifiers, particle accelerator RF sources, and pulsed industrial heating systems. Designers select this part when system requirements demand 1000 W peak power with high duty cycle and high voltage operation. A critical design consideration is heatsinking: at 1000 W pulsed output with realistic efficiencies, the device dissipates significant average power and must be bolted to a forced-air or liquid-cooled heatsink. Input/output matching must be designed for the specific frequency band of operation since the part is internally unmatched. This page synthesizes distributor pricing, application context, and design notes that complement, but do not replace, the manufacturer's datasheet.
MRF7P20040HSR3 - 10W RF Power LDMOS 2.03GHz | NXP
The NXP Semiconductors MRF7P20040HSR3 is a single W-CDMA lateral N-channel RF power MOSFET rated for 10 W average output power, 32 V test condition, and 18.2 dB gain at 2.03 GHz, housed in the NI-780S-4L ceramic package designed for cellular base station applications from 2010 to 2025 MHz. The device uses NXP's seventh-generation LDMOS (Laterally Diffused Metal-Oxide Semiconductor) process technology optimized for W-CDMA, CDMA, and LTE modulation formats in the 1.8-2.2 GHz band. The part supports Class AB and Class C amplifier operation and is engineered to handle 5:1 VSWR mismatches at 32 V DC and 2017.5 MHz with 50 W CW output power capability at the 3 dB compression point. The dual-die 'HS' suffix variant provides higher power density than the single-die HR version while sharing the same NI-780S-4L ceramic footprint for footprint-compatible design scaling. RF power MOSFETs (metal-oxide semiconductor field-effect transistors) are specialized power transistors designed for high-frequency amplification in the MHz-to-GHz range. The MRF7P20040HSR3 belongs to the LDMOS family, which dominates cellular base station power amplifier (PA) designs because of its high breakdown voltage, excellent thermal stability, and superior RF ruggedness compared to GaAs or bipolar alternatives. Within the broader semiconductor hierarchy, RF power MOSFETs sit alongside GaN HEMTs and SiC MESFITs as the primary technologies for sub-6 GHz high-power amplification. Key differentiating features of the MRF7P20040HSR3 include 18.2 dB typical gain at 2.03 GHz, a 65 V drain-source breakdown rating for robust transient survival, and a 100% PAR (peak-to-average ratio) tested guarantee for W-CDMA modulation signals. Production testing is performed in a symmetrical Doherty configuration, confirming the device's compatibility with high-efficiency Doherty amplifier architectures commonly used in modern LTE and 5G-NR base stations. The LDMOS process delivers higher drain efficiency than competing bipolar transistors when biased for Class AB operation, while supporting the wide instantaneous bandwidth required for multi-carrier signal aggregation. The NI-780S-4L ceramic package provides low thermal resistance and excellent RF grounding through its integrated lead frame. Typical applications include W-CDMA and LTE base station final-stage power amplifiers, CDMA2000 driver amplifiers, and Doherty amplifier modules operating in the 1.8 to 2.2 GHz cellular band. The device is also used in repeaters, microcells, picocells, and indoor distributed antenna systems. Designers should note that the MRF7P20040HSR3 requires a carefully designed impedance-matching network to achieve rated gain and efficiency. Proper thermal management through the ceramic package mounting surface is essential, and bias sequencing must follow NXP application note guidelines to prevent parametric drift. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a comprehensive reference for evaluating the MRF7P20040HSR3 against NXP's broader 7-series RF MOSFET family.
MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP
The NXP Semiconductors MRF7S16150HSR3 is an RF power field-effect transistor built on a high-voltage N-channel enhancement-mode lateral MOSFET (LDMOS) process, delivering 32 W of output power across the 1.6 GHz to 1.66 GHz band (WIMAX / WiMAX-class) in a ceramic, metal-sealed cofired NI-780S (HSR3) package. Operating from a 28 V drain supply, the device achieves 19.7 dB power gain at 1.5 A quiescent bias and is designed for class AB or class C base-station amplifier stages where long-term RF ruggedness and stable thermal performance are required. A radio-frequency power MOSFET (RF LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification. Within the broader taxonomy, an RF LDMOS sits below the generic power MOSFET family and above general-purpose small-signal MOSFETs; it is the dominant transistor technology for sub-3 GHz macro-cellular base-station power amplifiers because of its high breakdown voltage, high gain-per-watt, and ease of broadband matching. The MRF7S16150HSR3 specifically targets the 1.6 GHz segment (pre-WiMAX / WLL / public-safety bands) where GaN-on-SiC has not yet displaced legacy LDMOS on cost grounds. Key features include a 65 V minimum drain-source breakdown rating for high-voltage over-headroom margin, an integrated electrostatic discharge (ESD) protection network, and a thermally efficient NI-780S ceramic package whose source leads are connected directly to the mounting flange. The 19.7 dB gain figure at 1.6 GHz allows a single-device drive stage to feed a final-output chain at modest input level, reducing board complexity in macro-BTS and repeater designs. Typical applications include 1.6 GHz WIMAX base-station power amplifiers, fixed wireless access (FWA) customer-premises equipment, public-safety and military UHF/L-band amplifier blocks, and industrial RF heating sources. The LDMOS technology gives the MRF7S16150HSR3 superior linearity and ruggedness versus older silicon bipolar RF parts, while the SOI-style lateral structure delivers the thermal headroom needed for continuous duty in outdoor BTS cabinets. When designing with this part, ensure the device flange is mounted flat against a copper or aluminum heat-spreader with thermal compound; the source pins are internally tied to the package body, so inadequate mounting will cause severe thermal runaway. Bias sequencing must follow the VGS-on-before-VDS-on / VDS-off-before-VGS-off rule to avoid forward-biasing the parasitic drain-to-body diode into a short-circuit condition. This product page aggregates current distributor pricing, real cross-reference candidates, and applied engineering notes so that RF power designers can make sourcing and substitution decisions in one place without re-keying the datasheet.
MRF7S16150HSR5 - 32W 1.6GHz WiMAX RF MOSFET | NXP
The NXP MRF7S16150HSR5 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for 1.6 GHz WiMAX base-station power amplifiers, operating across 1600–1660 MHz with a 32 W typical output power at 28 V, 1.5 A bias. Packaged in the NI-780S ceramic flange-mount case (the ceramic/bolt-down "S" body), it is the R5 tape-and-reel variant aimed at high-volume assembly lines. The LDMOS RF power transistor is a member of the lateral-DMOS family that dominates cellular and broadband wireless infrastructure transmitters. LDMOS combines lateral channel geometry with a diffusion-defined drift region, yielding high breakdown, high gain, and inherent thermal stability on Si substrates. Within the broader semiconductor hierarchy, the MRF7S16150HSR5 sits in: RF power transistor > RF MOSFET > power MOSFET > discrete semiconductor > semiconductor. It is a single-band, single-polarity, common-source amplifier building block. Key features per the manufacturer datasheet include 19.7 dB typical power gain at 1.66 GHz, 65 V drain-source breakdown rating, and operation at 28 V nominal VDS. The part is rated for Class AB / Class C amplifier topologies used in WiMAX, WiBro, BWA, and OFDM multicarrier transmitters. Its ceramic NI-780S flange is designed to be bolted directly to a heatsink or copper spreader for lowest thermal resistance. Typical applications include 1.6 GHz WiMAX macro-cell base-station power amplifiers, broadband fixed-wireless-access transmitters, OFDM Class AB driver or final stages, and ISM-band pulsed RF power stages around 1.6–1700 MHz. The 19.7 dB gain allows two-stage PA designs with a single driver feeding the MRF7S16150HSR5 final. When designing with this device, observe the 65 V VDS absolute maximum, gate bias sequencing (negative VGS during power-down), and soldering guidelines for ceramic flange packages—the flange body must never be exposed to flux or solder. Proper heat-sinking and a low-inductance source grounding strategy are critical for stable RF performance. This page synthesizes distributor pricing, R5-tape-and-reel inventory across Mouser, DigiKey, and LCSC, and an MRF7S16150 family comparison that goes beyond what the manufacturer datasheet alone provides—including NI-780-4 versus NI-780HS analysis for sourcing engineers.
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
The NXP MRF7S18170HR3 is an RF power field-effect transistor built on N-channel enhancement-mode lateral MOSFET (LDMOS) technology, delivering 50 W of output power at 1.81 GHz with 17.5 dB gain from a 28 V supply. It is housed in the NI-880H-2L ceramic, metal-sealed cofired flange-mount package and is targeted at CDMA and multicarrier base-station amplifier applications in the 1805–1880 MHz band. An RF power LDMOS is a laterally diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification. Within the broader semiconductor taxonomy it is a discrete power MOSFET, and within RF it is classified as an RF power transistor. LDMOS dominates cellular base-station power amplifiers because it offers high drain efficiency, broadband operation, and excellent ruggedness into high VSWR loads, while remaining cost-effective compared to GaN alternatives. Key specifications include a maximum drain-source rating of 65 V, typical operating drain voltage of 28 V, quiescent drain current of 1.4 A under test, and a power gain of 17.5 dB at 1.81 GHz. The device supports broadband commercial and industrial operation up to roughly 1000 MHz in the same package family, and is designed for Class AB and Class C amplifier topologies common in Doherty and push-pull final stages. Architecturally, the MRF7S18170HR3 uses an enhancement-mode lateral structure that simplifies biasing by eliminating the need for a negative gate supply. The ceramic NI-880H-2L flange provides low thermal resistance from junction to heatsink, allowing continuous-wave RF operation at the rated 50 W output. Integrated ESD protection and high breakdown voltage improve field reliability in base-station environments. Typical applications include CDMA2000 and WCDMA macro-cell base-station power amplifiers, multicarrier driver amplifiers, and broadband industrial RF generators. The 1.81 GHz tuning point also covers the 1800 MHz DCS band, making the part flexible for European cellular deployments. When designing with this part, ensure the heatsink interface uses thermal compound and that the flange-mount screws are torqued to the datasheet specification to minimize thermal resistance. Input/output matching networks should be designed for the 50 Ω test condition; mismatch beyond 5:1 VSWR requires verifying the device remains within its SOA envelope. This page synthesizes distributor pricing, parametric alternatives, and application guidance not consolidated in the manufacturer datasheet, and is organized for engineers selecting RF power transistors for cellular infrastructure.
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
The NXP MRF7S19080HR3 is a single W-CDMA lateral N-channel RF power MOSFET (LDMOS) designed for CDMA base station applications, delivering 24 W average output power across 1930-1990 MHz from a 28 V supply in a NI-780H-2L ceramic package. It provides 18 dB power gain, 32 % drain efficiency at 24 W Pout, and -38 dBc ACPR at 5 MHz offset for 3.84 MHz channel bandwidth W-CDMA signals, with quiescent current IDQ = 750 mA. A lateral N-channel enhancement-mode RF power MOSFET (LDMOS) is a high-power transistor architecture in which the current-carrying channel is oriented laterally along the die, enabling high breakdown voltage, high gain, and excellent ruggedness under severe mismatch (high VSWR). Within the broader taxonomy it sits as: LDMOS -> RF power MOSFET -> power transistor -> discrete semiconductor. LDMOS dominates the cellular base-station PA market from 700 MHz to 2.7 GHz because of its high efficiency, broadband response, and ability to be driven directly from 50 ohm matching networks. Key features of the MRF7S19080HR3 include integrated ESD protection, optimized for Doherty and linear amplifier topologies, broadband response covering the full 1930-1990 MHz PCS/cellular band, and a Ni-plated ceramic NI-780H-2L package with two flanged mounting holes that provide low thermal resistance and reliable screw-down assembly. Typical two-carrier W-CDMA drive performance is characterized at IDQ = 750 mA with 28 V VDD, the standard bias point for Class AB linear operation. The internal die uses NXP's HV7 LDMOS process with a drain-source breakdown rating of 65 V, providing substantial headroom above the 28 V operating rail for transient over-voltage events. The NI-780H-2L package has a low thermal resistance path designed for forced-air cooling or heatsink mounting, and the gate is internally matched for simplified board-level integration. Typical applications include W-CDMA/CDMA2000 base-station power amplifiers, TD-SCDMA cellular infrastructure, multi-carrier linear PAs for PCS/cellular bands, Class AB driver stages in Doherty amplifier chains, and tactical or industrial RF links operating in the 1.9 GHz band. Engineers choose MRF7S19080HR3 when a proven, broadband 28 V LDMOS with documented W-CDMA ACPR performance is required. When designing with this device, prioritize a low-inductance drain bias feed and a properly modeled load-pull match at the target frequency. The part is rated for high VSWR mismatch; however, designing the output matching network for the documented 50 ohm load remains the safest path to datasheet-typical gain and efficiency.
MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP
The NXP MRF7S19100NBR1 is a 29 W average single-W-CDMA lateral N-channel RF power MOSFET designed for the 1930-1990 MHz band, supplied in a TO-270 WB-4 (TO-272 WB-4) plastic over-molded package. Per the NXP datasheet, it operates from a 28 V rail, delivers 17.5 dB typical power gain at 1.96 GHz, and is specified for 1.93 GHz to 1.99 GHz cellular base-station amplification. What is an RF power MOSFET? It is a lateral double-diffused (LDMOS) or laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. RF power MOSFETs sit at the output stage of transmitter lineups and belong to the broader hierarchy of RF power transistors > power semiconductor > discrete semiconductor. Compared with bipolar RF power transistors, lateral RF MOSFETs offer higher gain, simpler biasing (gate voltage only), and better thermal stability, which is why they dominate modern cellular base-station final-stage designs. Key features include 65 V minimum drain-source breakdown voltage, a 28 V nominal operating supply, 17.5 dB typical power gain, and 29 W average output power in single-W-CDMA with 3GPP Test Model 1, 64 DPCH, 50% clipping at PAR 7.5 dB. The TO-270 WB-4 package provides a low-inductance ceramic-free over-molded lead frame with a copper ground flange, supporting stable RF performance and simplified surface-mount or through-hole PCB mounting. Architecturally, the device is a single N-channel enhancement-mode lateral MOSFET pair internally matched for the 1.93-1.99 GHz W-CDMA downlink band. The datasheet specifies quiescent drain current IDQ = 1000 mA and a guaranteed gain/efficiency combination that meets 3GPP spectral-emission requirements without external predistortion, making it a workhorse driver or final-stage part for W-CDMA picocell, microcell, and femtocell base stations as well as repeater infrastructure. Typical applications include W-CDMA/LTE base-station final-stage amplifiers in the 1.93-1.99 GHz downlink band, RF driver stages for higher-power Doherty amplifiers, and cellular repeater/booster power modules. The wide-band gain profile also supports multi-carrier GSM and TD-SCDMA reuse in legacy networks migrating toward LTE. When designing with this part, observe the VDD = 28 V / IDQ = 1000 mA reference bias, ensure the drain load-line stays inside the published SOA at full output power, and follow the manufacturer-recommended evaluation PCB layout (controlled-impedance microstrip, low-thermal-resistance mounting to the heatsink with proper torque, and minimal lead length) to realize the datasheet gain and efficiency. Compared with a higher-frequency GaN alternative, this NXP LDMOS part offers comparable gain at the W-CDMA band at lower cost but at reduced bandwidth and lower peak efficiency at very wide instantaneous bandwidths. This page synthesizes NXP official datasheet parameters, current distributor stock and pricing, verified drop-in same-package alternatives, and practical design notes not available on a single distributor listing.
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF7S19100NR1 is a lateral N-channel enhancement-mode RF power MOSFET designed for CDMA base station applications from 1930 to 1990 MHz, delivering 29 W average output power at 28 V in a TO-270 WB-4 (Case 1486-03) overmolded plastic package. The device is a single-stage RF power LDMOS transistor rated at 28 V VDD with 17.5 dB gain and 1.93 GHz to 1.99 GHz frequency coverage, optimized for single-carrier W-CDMA modulation with 3GPP Test Model 1, 64 DPCH at 50% clipping. An RF power MOSFET (LDMOS) is a specialized lateral double-diffused metal-oxide-semiconductor field-effect transistor engineered for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. Unlike small-signal MOSFETs, RF LDMOS devices feature a drift region that supports high breakdown voltage while maintaining excellent RF gain, making them the dominant transistor technology in cellular base-station power amplifiers. MRF7S19100NR1 sits in the broader hierarchy: RF power transistor -> RF MOSFET -> LDMOS -> discrete semiconductor -> electronic component. Key features include 17.5 dB small-signal gain at 1.96 GHz, 29 W average Pout with 7.5 dB PAR W-CDMA input signal, 28 V typical drain supply, 65 V minimum drain-source breakdown voltage, and integrated electrostatic discharge protection. The device supports Class AB and Class C bias modes and is designed for multi-carrier amplifier (MCPA) applications where linearity and efficiency are both critical. The MRF7S19100NR1 architecture uses NXP's seventh-generation (Gen7) LDMOS process, which provides improved thermal resistance (theta_JC below 0.4 C/W) and high power density. The overmolded plastic TO-270 WB-4 package with ceramic window minimizes parasitic losses at 2 GHz while providing a robust surface-mountable footprint suitable for automated assembly. Typical applications include W-CDMA and CDMA2000 base-station power amplifiers, multi-carrier cellular repeaters, and 1.9 GHz PCS/DCS-1900 band linear amplifiers. The 1930-1990 MHz coverage targets the North American PCS uplink/downlink bands. When designing with this part, maintain 50 ohm microstrip transmission lines at the RF input and output leads, place the device on a thermal-via array for the source tabs, and ensure the bias sequencing circuit prevents VGS from being applied before VDD to avoid device damage. This page synthesizes NXP datasheet specifications, current distributor pricing, drop-in alternative candidates, and practical RF design guidance not consolidated in any single manufacturer document.
MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP
The NXP MRF7S19120NR1 is a single W-CDMA lateral N-channel RF power MOSFET designed for CDMA base station applications across the 1930 MHz to 1990 MHz band, delivering 36 W average output power at 28 V supply in a TO-270 WB-4 overmolded plastic package. Headline specifications include 28 V drain bias, 1.2 A typical quiescent current, 18 dB small-signal gain at 1.99 GHz, and 65 V drain-source breakdown rating per the Freescale/NXP datasheet family. The part is a member of NXP's seventh-generation (Gen7) high-voltage LDMOS RF power transistor portfolio. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized MOSFET optimized for high-frequency, high-power amplification. The lateral structure places source, gate, and drain on the same surface, enabling low parasitic capacitance and high gain at UHF/microwave frequencies. Within the RF power device hierarchy, LDMOS sits alongside GaAs HEMT, GaN HEMT, and Si bipolar; LDMOS dominates sub-3 GHz base-station transmitter final stages because of its high breakdown voltage, high efficiency when driven in Class AB, and lower cost-per-watt than GaN at these frequencies. The MRF7S19120NR1 specifically targets W-CDMA, LTE-FDD Band 2/PCS, and similar 3GPP air interfaces that share the 1930-1990 MHz downlink allocation. Key electrical features include 18 dB typical power gain at 1.99 GHz, 36 W average CW output power under W-CDMA modulation, 65 V minimum drain-source breakdown, and Class AB / Class C operating compatibility. The device is built on NXP's Gen7 HV8 LDMOS process, which combines high breakdown with reduced internal capacitances to maximize both gain and efficiency in Doherty and standard push-pull final-stage architectures used in macro-cell base stations. Internally, the MRF7S19120NR1 integrates a single N-channel enhancement-mode lateral MOSFET die mounted on a ceramic / copper flange and overmolded in the TO-270 WB-4 footprint. Internal input and output matching networks are pre-tuned to the 1930-1990 MHz band, so external matching is limited to fine-tuning elements. The drain is connected through the package flange for low thermal impedance and direct PCB-to-heatsink mounting. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, LTE-FDD Band 2/PCS final stages, multi-carrier GSM/EDGE combiner amplifiers, and industrial RF heating. Designers favor this part for its high power density, repeatable performance across production lots, and drop-in compatibility with NXP's broader MRF7S family reference designs. When designing with this device, ensure the heatsink/PCB thermal path maintains the flange temperature within the datasheet maximum; at 36 W average and roughly 50% efficiency, expect continuous dissipation on the order of 30-40 W requiring a substantial thermal mass. Always sequence gate bias before drain bias to prevent uncontrolled turn-on. This page consolidates verified distributor pricing, drop-in NXP same-family alternatives, RF base-station application guidance, and packaging information beyond the bare manufacturer datasheet.
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
The NXP MRF7S19170HSR3 is a 50 W average, 28 V single W-CDMA lateral N-channel enhancement-mode RF power MOSFET (LDMOS) designed for 1930-1990 MHz CDMA base station applications, housed in the NI-880S ceramic bolt-down package. It delivers 17.2 dB gain at 1.99 GHz under 28 V / 1.4 A bias and uses a 65 V rated drain-source breakdown optimized for 28 V cellular infrastructure rails. The device is the second-source 'HS' variant with a bolt-down flange for grounded-fixture assembly, suitable for Class AB and Class C amplifier topologies across all standard cellular base station modulation formats. An RF power MOSFET (LDMOS) is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-power, high-frequency amplification in the 0.5-3 GHz range. Within the broader RF semiconductor hierarchy, it sits between small-signal RF MOSFETs and traveling-wave tube or GaN power amplifiers, providing the dominant cellular base station transistor technology through the 4G LTE era. LDMOS parts like the MRF7S19170HSR3 are favored over bipolar transistors for their high gain, single-polarity biasing, and inherent ruggedness into high VSWR loads. Key features include 17.2 dB typical power gain, 50 W average output power (peak envelope power > 200 W typical for W-CDMA), 65 V drain-source breakdown rating, integrated ESD protection, and an internally matched input that simplifies PCB-level matching networks. The NI-880S package provides a low thermal-resistance path to the system heatsink, critical for continuous-wave base station duty cycles where junction-to-case temperature drives long-term reliability. The MRF7S19170HSR3 uses NXP's HV7 LDMOS process, which places source, body, and drain laterally on the silicon die. This layout minimizes parasitic capacitance, raises breakdown voltage, and supports the high peak-to-average ratios required by multicarrier W-CDMA signals. The die is then packaged in a metal-ceramic NI-880S flange for direct mounting to a copper or aluminum spreader. Typical applications include CDMA2000, W-CDMA, and multi-carrier GSM edge base station power amplifiers, Doherty final-stage driver positions, and broadband 1.9 GHz industrial/scientific RF amplifiers. The 1.93-1.99 GHz band covers US PCS and most global UMTS band allocations, making this part a workhorse for legacy 3G infrastructure retrofits and replacements. When designing with this part, pay careful attention to lead-free solder reflow profiles (the device's Ni-Au lead finish demands a controlled peak temperature around 250-260 C), provide adequate via fencing around the RF input/output traces, and ensure the bolt-down flange is torqued to the heatsink spec so thermal resistance remains within the datasheet maximum. This page synthesizes NXP distributor stock, parametric-equivalent RF LDMOS candidates, and practical Doherty PA design notes not consolidated in the original Freescale/NXP datasheet alone.
MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP
The NXP MRF7S21080HR3 is an RF power field-effect transistor (LDMOS, N-channel enhancement-mode) delivering 22 W average output power across the 2110-2170 MHz band from a 28 V supply, housed in the NI-780S-4S2S ceramic package. It is designed specifically for CDMA, W-CDMA, and multicarrier amplifier applications in base-station infrastructure, providing 18 dB power gain at 800 mA quiescent current. An LDMOS (Laterally Diffused MOSFET) transistor is a type of power MOSFET optimized for RF amplification in the UHF to 3 GHz range. RF power transistors sit in the hierarchy: RF power transistor -> RF power amplifier -> wireless infrastructure component -> discrete semiconductor. Compared to earlier bipolar RF power devices, LDMOS offers higher gain, better thermal stability, and superior ruggedness into load mismatches. The lateral structure gives low feedback capacitance, enabling broadband operation and stable performance across production variation. Key features of the MRF7S21080HR3 include typical drain efficiency of 32% at 22 W average W-CDMA output, ACPR of -38 dBc at 5 MHz offset, and integrated ESD protection. The device operates from a single 28 V rail and supports both Class AB and Class C bias topologies. Lateral MOSFET construction provides inherent thermal stability and gain linearity, allowing designers to push output power or back off for line-of-sight multicarrier linearity without device failure. In a typical base-station PA, the MRF7S21080HR3 is the final stage in a Doherty or class-AB lineup, preceded by driver-stage MRF7S21080HSR3 or smaller NXP RF MOSFETs. The ceramic NI-780 package provides low thermal resistance to the system heatsink, with the source leads grounded directly through the flange. Designers apply gate bias with a negative supply and sequence VDD and VGG to prevent partial turn-on that would damage the device. Designed for cellular-infrastructure PAs covering 2110-2170 MHz (UMTS Band 1, AWS, LTE band), the MRF7S21080HR3 also supports TD-SCDMA and PCN/PCS applications. Its broadband response allows one part to cover multi-band radios when paired with appropriate matching networks, reducing SKU count in production. Choose this part when a robust 28 V, ~22 W LDMOS with proven production pedigree is needed for urban-macro or outdoor small-cell base-station RF chains. When evaluating thermal design, ensure the heatsink keeps the case below the maximum rated junction temperature during continuous W-CDMA operation; modest de-rating (output back-off of 1-2 dB) preserves long-term reliability. Designers should also provide adequate input-side harmonic terminations to meet 3GPP spectral-emission masks in production units.
MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP
The NXP MRF7S21080HSR3 is a single W-CDMA lateral N-channel RF power MOSFET designed for 2110-2170 MHz base station applications, delivering 22 W average output power at 28 V with 18 dB power gain and 32% drain efficiency in an NI-780S (NI-780HS) ceramic-metal sealed surface-mount package. An RF power MOSFET is a specialized lateral N-channel enhancement-mode transistor optimized for high-frequency, high-power amplification where conventional signal MOSFETs cannot deliver the required RF efficiency and ruggedness. In the hierarchy of power semiconductors, RF power MOSFETs sit below general-purpose power MOSFETs but above small-signal FETs, and they form the final amplification stage in cellular base station transmitter chains where linearity and efficiency are critical. Lateral geometry places source, gate, and drain on the same surface, enabling lower parasitic capacitance and higher gain at RF frequencies than vertical DMOS structures. Key performance parameters include an operating frequency range of 2110-2170 MHz (UMTS Band 1 / AWS downlink), a P1dB-class pulsed output capability substantially higher than the 22 W average rating, and integrated ESD protection. The device uses a single-carrier W-CDMA reference waveform with 3.84 MHz channel bandwidth and 7.5 dB peak-to-average ratio. ACPR performance of -38 dBc at 5 MHz offset makes the part suitable for 3GPP spectral mask compliance without extensive digital predistortion. The MRF7S21080HSR3 uses a ceramic-metal sealed cofired (NI-780S/NI-780HS) Air Cavity Package designed for low thermal resistance and high reliability in base station environments. The lateral MOSFET die is matched to 50 ohms at the input and incorporates internal input matching networks that simplify external PCB design. Operating from a 28 V VDD rail with IDQ = 800 mA quiescent bias, the device achieves 32% drain efficiency at 22 W average output, balancing thermal dissipation against linearity. The die is rated for 65 V drain-to-source breakdown. Typical applications include W-CDMA, LTE, and multi-mode cellular base station power amplifiers, repeaters, and micro-cell transmitters operating in the 2110-2170 MHz UMTS Band 1 / AWS downlink spectrum. The device is also used in military and aerospace RF communication links requiring 2.1 GHz high-linearity amplification. Designers should ensure the gate bias network provides a stable -2 to -3 V pinch-off voltage with sequenced VDD turn-on to prevent parametric oscillation. Source leads must be grounded directly beneath the package flange using multiple vias to minimize common-source inductance, which would otherwise degrade gain and efficiency at the top end of the operating band. This page consolidates distributor pricing, parametric cross-reference data, and application engineering guidance not aggregated on the manufacturer datasheet.
MRF7S21110HR3 - 33W RF Power LDMOS 2.11-2.17 GHz | NXP
The NXP MRF7S21110HR3 is a 33 W average (Pout) RF power LDMOS field-effect transistor designed for single-carrier W-CDMA base-station amplifiers operating in the 2110-2170 MHz band, supplied in the NI-780H-2L (NI-780) ceramic-flange package. It operates from a 28 V VDD rail with a quiescent current of 1100 mA, delivers 17.3 dB power gain at 2167.5 MHz, and achieves 32.5% drain efficiency under W-CDMA IQ-magnitude-clipping drive (PAR 7.5 dB @ 0.01% CCDF). An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a power MOSFET variant engineered for high-power RF amplification. It occupies the role RF power transistor -> LDMOS FET -> discrete power semiconductor -> active RF component within a base-station transmit chain. Compared to bipolar RF power devices, LDMOS offers higher gain, simpler biasing, and better ruggedness into mismatched loads, which is why it dominates cellular macro-cell PA design from 700 MHz through 2.7 GHz. Key features of the MRF7S21110HR3 include a 65 V drain-source rating, integrated ESD protection, ease of power scaling through parallel device operation, and optimized thermal performance via the NI-780 ceramic flange. The device also supports multicarrier drive and Doherty PA topologies, and is rated for use in Class AB and Class C amplifier modes with integrated temperature-compensated bias network options on the matching circuit board. Architecturally, the MRF7S21110HR3 is an N-channel enhancement-mode lateral MOSFET built on NXP's HV7 LDMOS process, which provides the breakdown voltage headroom needed for 28 V operation while maintaining the high fT required at 2.17 GHz. The ceramic NI-780H-2L package has a low thermal resistance that supports continuous-wave operation at full rated output when properly heatsunk to the chassis. Typical applications include W-CDMA, CDMA, and LTE-FDD macro-cell base-station power amplifiers, multicarrier driver stages, and Doherty final-stage pairs in the 2.11-2.17 GHz downlink band. The 33 W average power capability maps directly to a single sector of a 3-sector macro-cell PA at 2x MIMO configuration. When designing with the MRF7S21110HR3, ensure the drain voltage stays within the 28 V +/- 0.5 V target window to preserve linearity, and provide a minimum 50 W copper-spread heatsink to maintain junction temperature below 200 C at full duty cycle. This page synthesizes current distributor stock, pricing tiers, drop-in same-package alternatives, and application circuit guidance drawn from the NXP datasheet and reference designs - information gain not found on a single distributor listing.
MRF7S21110HR5 - 33W, 2.17GHz RF Power LDMOS Transistor | NXP
The NXP MRF7S21110HR5 is a 33 W, 28 V RF power LDMOS transistor designed for base-station and commercial wireless infrastructure applications in the 2110 MHz to 2170 MHz band, packaged in the NI-780 ceramic carrier (also referenced in distributor listings as the NI-780 ceramic package). It is specified at 2.17 GHz with 17.3 dB power gain, 33 W P1dB-class output power, and is characterized under a 28 V DC supply and CW operation. The device is part of NXP's MRF7S family of high-frequency LDMOS power FETs optimized for W-CDMA, LTE, and UMTS base-station transmitter final stages. What is an LDMOS RF power transistor? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a power transistor technology built on a silicon die with a lateral drain structure. LDMOS devices dominate the cellular base-station power amplifier (PA) market because they combine high RF power density, high breakdown voltage (typically 65 V on the drain), excellent thermal conductivity, and competitive cost versus GaN or Si bipolar alternatives. LDMOS sits in the RF power semiconductor hierarchy between GaAs HBTs (used at lower power and frequency) and GaN HEMTs (used at higher frequency and power), and remains the workhorse of sub-3 GHz macro-cell transmitter final stages. Key features of the MRF7S21110HR5 include a high breakdown voltage rating of 65 V, internally matched input and output for ease of use, integrated ESD protection, a hermetic NI-780 ceramic package for high-reliability operation, and gold-plated leads for low-resistance interconnect. The LDMOS die provides high gain and efficiency for Class-AB PA designs, supporting digital predistortion (DPD) correction for linearity improvement. The internal matching simplifies board layout by reducing the number of external matching components required at the operating frequency. Technically, the device uses NXP's seventh-generation LDMOS process, which delivers improved thermal performance and ruggedness compared to earlier MRF6/MRF7 generations. The part is specified for 50 ohm operation with the internal matching network, making it a near drop-in final-stage transistor for 2.1 GHz band macro-cell PAs. Designers typically pair it with NXP's driver-stage MRF7S20180 or similar -8 dB gain block, plus a circulator and bandpass filter in the final assembly. Typical applications include W-CDMA, LTE, and UMTS base-station transmitter final stages at 2.11-2.17 GHz, commercial wireless infrastructure, repeaters and small-cell power amplifiers, and industrial/scientific RF power modules. These uses all benefit from the part's high power density and high linearity. When designing with this device, use a gold-tin or gold-germanium die attachment on a copper or molybdenum heatsink with adequate thermal vias; the LDMOS die dissipates significant heat at 33 W output, and junction-to-case thermal management is critical to long-term reliability. Apply proper DC bias sequencing (gate voltage before drain voltage) to prevent parametric drift. This page synthesizes NXP datasheet parameters, distributor pricing context, drop-in family variants and practical thermal bias-design guidance not found in the bare manufacturer datasheet.
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
The NXP MRF7S21150HSR3 is a 28 V, 44 W average single W-CDMA lateral N-channel RF power MOSFET designed for the 2110-2170 MHz cellular base-station band, housed in an NI-780S ceramic package. It is the high-source-lead variant of the MRF7S21150 family, optimized for class-AB amplifier operation in CDMA, W-CDMA, and multi-carrier base-station power amplifiers, where it delivers 17.5 dB typical power gain at 2.14 GHz with a 28 V supply. A RF power MOSFET is a laterally-diffused metal-oxide-semiconductor (LDMOS) transistor engineered specifically for high-power RF amplification. Within the broader semiconductor taxonomy it sits as a sub-class of power MOSFET -> discrete MOSFET -> discrete semiconductor, distinguished from low-voltage logic MOSFETs by its high drain breakdown voltage (65 V rated), thick gate oxide, and internal matching network that flattens gain and efficiency across the operating bandwidth. RF LDMOS devices historically dominate macro-cell base-station PAs because of their high ruggedness, ease of paralleling, and low thermal resistance relative to competing GaAs or silicon bipolar technologies. The MRF7S21150HSR3 achieves 44 W average output power (150 W peak) in a pulsed W-CDMA signal envelope while sustaining >15 dB gain across the 2110-2170 MHz band. According to the manufacturer datasheet, the device is rated for 28 V operation with a maximum drain voltage of 65 V, uses enhancement-mode N-channel gate drive (no negative bias required for off-state), and includes integrated electrostatic discharge protection. The part is qualified to JEDEC JESD22 test methods for thermal and mechanical reliability in base-station environments. The MRF7S21150HSR3 is the high-source-lead (HS) tape-and-reel variant with the source tied through the package flange, simplifying board-level grounding and thermal-via layout. Designers typically deploy it in a Doherty final-stage configuration for high-efficiency multi-carrier amplifier (MCPA) blocks feeding 4x4 MIMO antenna arrays in LTE and 5G NR base stations. Test-bench characterization under 3GPP W-CDMA signals shows adjacent-channel leakage ratio (ACLR) performance suitable for direct connection to digital pre-distortion (DPD) linearizers without intermediate filtering. Typical applications include W-CDMA/LTE macro base-station final-stage PA, multi-carrier power amplifiers (MCPA), and driver stages for higher-power LDMOS such as the MRF8P20100. Designers should pair the part with a well-matched 50 Ω input/output network, adequate forced-air cooling, and a sequencing controller that holds the gate below threshold during drain-voltage ramp-up. The NI-780S ceramic package needs a copper flange with low thermal resistance; see the NXP application note for solder-down and via-fence recommendations. This page synthesizes distributor pricing from DigiKey and Mouser (as of 2026-10-16), parametric cross-reference data, and application guidance for the MRF7S21150HSR3, complementing the manufacturer datasheet with selection context, drop-in alternatives, and design notes not present in the original PDF.