MOSFETs
Produtos (1294)
SQ2398ES-T1-GE3 - 100V N-Ch TrenchFET Auto MOSFET | Vishay
The Vishay Siliconix SQ2398ES-T1-GE3 is an automotive-grade N-Channel TrenchFET power MOSFET rated for 100 V VDS, 1.6 A continuous drain current at Tc, and 2 W power dissipation, packaged in the industry-standard SOT-23-3 (TO-236) surface-mount footprint. The suffix -GE3 indicates Vishay's lead-free, halogen-free, RoHS-compliant Green compliance tier. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. Within the discrete semiconductor taxonomy, MOSFETs sit under transistors, then discrete semiconductors, then power management components. N-channel enhancement-mode MOSFETs like the SQ2398ES are the most common type, using a positive gate-to-source voltage to create a conducting channel between drain and source. TrenchFET is Vishay's proprietary trench-gate technology that lowers on-resistance per unit area compared to planar MOSFETs, enabling smaller packages to handle more current. Key features of the SQ2398ES-T1-GE3 include a 100 V drain-to-source breakdown voltage (V(BR)DSS), 1.6 A continuous drain current (ID) at case temperature, a 20 V maximum gate-to-source voltage (VGS), and AEC-Q101 automotive qualification with 100 % Rg tested and UIS (Unclamped Inductive Switching) tested. The SOT-23-3 package exposes the same land pattern as thousands of industry-standard small-signal MOSFETs, allowing drop-in substitution when pinout and threshold voltage match. The trench-gate architecture reduces RDS(on) compared to planar equivalents of similar die size, while the 175 °C maximum junction temperature supports underhood automotive environments. The integrated ESD protection diode between gate and source improves manufacturing robustness. Typical applications include automotive 12 V/24 V load switching (LED drivers, solenoid drivers, relay replacements), DC-DC converter low-side switches, battery management protection circuits, and industrial power-management switching up to 100 V rails. The compact SOT-23-3 footprint enables high-density PCB designs. When designing with this device, ensure VGS drive voltage is well above the gate threshold (typically 10 V for full enhancement) to minimize conduction loss. For switching applications above 1 kHz, gate-drive impedance must be minimized to avoid partial-turn-on losses in the linear region. This page synthesizes distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical PCB layout guidance for the SQ2398ES-T1-GE3 that are not consolidated in the manufacturer datasheet.
SQ4532AEY-T1_GE3 - 30V Dual N+P MOSFET AEC-Q101 | Vishay
The Vishay SQ4532AEY-T1_GE3 is an automotive-qualified complementary N-channel and P-channel 30 V power MOSFET array housed in an 8-pin SOIC (MS-012AA / SO-8) surface-mount package. The N-channel device is rated 7.3 A at Tc and the P-channel device 5.3 A at Tc, with a typical on-state resistance of 0.021 ohm and continuous power dissipation of 3.3 W at a maximum junction temperature of 175 C. A complementary MOSFET array integrates one N-channel and one P-channel MOSFET die in a single package, occupying a position between discrete small-signal transistors and full power-management ICs within the semiconductor hierarchy. By pairing opposite-polarity FETs, the device simplifies half-bridge, load-switch, and push-pull topologies and shortens the high-side/low-side routing path on the PCB. Key features include a 30 V drain-source rating, a 20 V gate-source rating, AEC-Q101 qualification for automotive environments, and a 175 C maximum operating junction temperature, which is higher than the 150 C limit of many comparable arrays. The device is halogen-free and RoHS compliant, and it is supplied in tape-and-reel packaging for automated assembly. Architecturally, the two MOSFET dies are fabricated in Vishay Siliconix TrenchFET silicon technology optimized for low on-resistance at moderate currents. The low Rds(on) reduces conduction loss, while the matched complementary pair enables symmetric switching performance in bridge and polarity-protection circuits. Typical applications include automotive body and power modules, H-bridge and half-bridge motor drivers, DC load switches and reverse-polarity protection, and industrial power management where a single compact package must host both polarities. The 175 C rating suits underhood and high-ambient locations. A key design consideration is thermal: 3.3 W dissipation requires careful copper-area sizing on the SOIC-8 exposed-lead footprint, and this exact ordering code is subject to Vishay product termination notice PTN-SIL-013-2026. This page synthesizes verified distributor data, the AEC-Q101 compliance trail, drop-in alternatives, and practical design notes not found on any single manufacturer or distributor page.
SQ4532AEY-T1_GE3 - 30V Dual N+P MOSFET, AEC-Q101 | Vishay
The Vishay Siliconix SQ4532AEY-T1_GE3 is an automotive-qualified dual MOSFET array integrating one N-channel and one P-channel power MOSFET, rated 30 V drain-source voltage with 7.3 A (N-channel, Tc) and 5.3 A (P-channel, Tc) continuous drain current in a compact 8-pin SOIC (SO-8, MS-012) surface-mount package with 3.3 W power dissipation. A MOSFET array is a multi-die power semiconductor that places two or more MOSFETs in a single package, in this case a complementary N-channel plus P-channel pair. Complementary arrays are widely used in power management IC hierarchies for half-bridge and push-pull switching stages, load switches, and polarity-reversal circuits, where matching the two devices in one footprint reduces board area and layout parasitics. Key features include the 30 V (D-S) breakdown rating, 20 V gate-source rating, AEC-Q101 automotive qualification, and a 175 C maximum junction temperature that supports harsh under-hood and industrial environments. The package is halogen-free and RoHS compliant, per Datasheets.com listing data, and the part is marked with Vishay LITTLE FOOT die technology for low on-resistance switching. The complementary N+P topology means a single SOIC-8 replaces two discrete SOT-23-class FETs, cutting board space roughly in half and shortening gate-drive loops, which reduces switching ringing and EMI. The device is specified at case temperature (Tc), so designers should derate current at higher ambient temperatures using the datasheet power-dissipation curves. Typical applications include automotive H-bridge and half-bridge motor control, DC-DC converter power stages, battery-powered load switches with polarity considerations, and industrial power distribution modules where a compact 30 V complementary switch pair is required. Design considerations: because the N- and P-channel dies share the package thermal path, total dissipation from both devices must be budgeted against the 3.3 W (Tc) limit; verify junction temperature with Vishay AN808 mounting guidance for LITTLE FOOT SO-8 power MOSFETs. This page synthesizes verified distributor pricing data, drop-in alternatives, pinout information, and practical design notes not consolidated in the manufacturer datasheet alone.
SQD50P06-15L_T4GE3 - 60V P-Channel 50A MOSFET TO-252 | Vishay
The Vishay Siliconix SQD50P06-15L_T4GE3 is an automotive-grade P-Channel TrenchFET power MOSFET rated for -60 V drain-to-source breakdown and -50 A continuous drain current (Tc) in a 3-pin TO-252AA (DPAK) surface-mount package. It delivers an ultra-low on-resistance of 15 mΩ typical at VGS = -10 V and supports 136 W power dissipation at 25 °C case temperature, making it a strong candidate for high-current load switching in automotive and industrial power systems. A P-Channel MOSFET is a voltage-controlled switch whose conduction channel is formed when a negative gate-to-source voltage (VGS) is applied relative to an N-type substrate. Unlike N-Channel MOSFETs, P-Channel devices allow the load to be tied to ground with the high-side switch referenced to the positive rail, simplifying circuits such as high-side load switches, reverse-battery protection, and half-bridge motor drivers. Within the broader taxonomy, the SQD50P06 sits in the hierarchy: P-Channel MOSFET → power MOSFET → discrete semiconductor → power management component. Its P-Channel polarity and TrenchFET construction give it inherent simplicity advantages over equivalent N-Channel high-side circuits, which require bootstrap or charge-pump gate drivers. Key differentiating specifications include 100 % Rg (gate resistance) tested for predictable switching performance, 100 % UIS (unclamped inductive switching) tested for ruggedness against automotive inductive transients, operation to 175 °C junction temperature for under-hood environments, and AEC-Q101 automotive qualification. The TO-252AA package combines a compact PCB footprint with a high-dissipation tab, supporting continuous 50 A switching with appropriate copper-cooling area. Typical applications for the SQD50P06-15L_T4GE3 include high-side load switches in automotive ECUs, motor-drive reverse-polarity protection, battery-management system (BMS) disconnect switches, and industrial solenoid or relay drivers. The -60 V rating also provides substantial margin against 24 V industrial bus transients and inductive kick events. When designing with the SQD50P06, gate-drive considerations matter: confirm VGS_off bias (typically +5 V to +10 V) is sufficient to fully enhance the channel, and place a small gate-source resistor (10 kΩ–100 kΩ) to prevent unintended turn-on from dv/dt coupling. The TO-252 tab should be soldered to at least 1 square inch of copper for thermal relief, especially when switching at high duty cycles. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including a parametric comparison against other TO-252 P-Channel MOSFETs from competing vendors.
SQD50P08-25L_GE3 - 80V P-Ch 50A Automotive MOSFET | Vishay
The Vishay Siliconix SQD50P08-25L_GE3 is an automotive-grade P-Channel TrenchFET power MOSFET rated at -80 V VDS, -50 A continuous drain current (TC), and 136 W power dissipation, housed in a surface-mount TO-252 (DPAK) package. It is part of Vishay's Automotive P-Channel 80 V (D-S) 175 °C MOSFET series and is qualified to AEC-Q101 with 100 % Rg and UIS testing for reliability in harsh environments. A P-Channel MOSFET (PMOS) is a type of field-effect transistor in which the channel is formed by holes rather than electrons. P-Channel MOSFETs are commonly employed as high-side switches in load-switch, reverse-battery protection, and H-bridge motor drive circuits. Within the broader taxonomy, this device sits at: power MOSFET -> discrete semiconductor -> semiconductor. As a P-Channel device, it turns ON when its gate is pulled below the source by approximately 10 V, enabling simple low-side gate drive when the load sits on the low side of the supply. Key differentiating specifications include a maximum on-resistance of 25 mΩ at VGS = -10 V, an operating junction temperature range up to +175 °C, and a low thermal resistance path via the DPAK tab to the PCB copper pour. The part supports avalanche operation (UIS tested) and is halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. Its TrenchFET® silicon technology minimizes conduction losses while sustaining high peak currents during inrush or motor stall events. Architecturally, the device uses Vishay's TrenchFET® process, where a vertical trench filled with gate polysilicon shortens the channel length and dramatically reduces RDS(on) per unit area. The result is a small DPAK-outline part that can switch -50 A continuously with proper PCB copper heat-sinking. The die is rated for 175 °C junction operation, giving significant thermal margin above typical automotive under-hood ambient temperatures. Typical applications include automotive load switching, high-side switching in 12 V/24 V systems, reverse-battery protection, motor drive H-bridges (high-side), and power OR-ing. The wide -80 V rating also supports industrial 48 V systems with adequate transient headroom for inductive loads. When designing with this part, ensure that the PCB copper area beneath the DPAK tab provides at least 1 square inch of 2-oz copper to keep the junction temperature below 150 °C at full rated current. A 10 V gate drive is required for guaranteed RDS(on); logic-level microcontrollers (3.3 V) cannot drive this part directly and require a gate driver. This page synthesizes AEC-Q101 compliance evidence, Pin Design verification, drop-in alternatives from Vishay's same family, and practical PCB thermal design guidance not collected in the manufacturer datasheet.
SQD50P08-28 - 80V P-Channel 48A TrenchFET MOSFET | Vishay
The Vishay Siliconix SQD50P08-28 is an automotive-grade P-channel TrenchFET power MOSFET rated at 80 V VDS, 48 A continuous drain current (TC), and 136 W power dissipation in a surface-mount TO-252AA (DPAK) package. It belongs to Vishay's TrenchFET P-channel family and is qualified to AEC-Q101 with 100% Rg tested and 100% UIS (unclamped inductive switching) tested, making it a robust choice for harsh automotive environments. What is a P-channel MOSFET? A P-channel MOSFET is a type of field-effect transistor in which the channel is formed by holes flowing from source to drain when a negative gate-to-source voltage is applied. As a member of the broader MOSFET hypernym hierarchy (P-channel MOSFET -> MOSFET -> FET -> power transistor -> discrete semiconductor), it is commonly used for high-side switching because it can be turned on by pulling the gate toward ground. The SQD50P08-28 specifically uses Vishay's TrenchFET technology, which reduces RDS(on) by etching vertical trenches into the silicon, dramatically lowering conduction losses versus planar MOSFETs. Key specifications include a maximum on-resistance of 28 mΩ at VGS = -10 V, a maximum gate threshold of -2.5 V (typical), and an operating junction temperature up to 175 °C. The TO-252AA package provides a low-profile surface-mount form factor suitable for automated PCB assembly while maintaining thermal performance for power dissipation. The device is halogen-free per Vishay's documentation and is supplied in tape-and-reel packaging for high-volume manufacturing. Typical applications include automotive load switching such as LED lighting drivers, HVAC blower motor control, power seat modules, and body electronics where high-side switches are preferred for fail-safe behavior. The P-channel topology eliminates the need for a charge pump or bootstrap circuit that would be required for an N-channel high-side switch, simplifying gate drive design. The 80 V rating also provides ample headroom for 12 V and 24 V automotive bus transients including load-dump pulses. Design considerations include ensuring the gate drive circuit can pull the gate to within -10 V of source for full enhancement, and providing adequate PCB copper area for thermal dissipation at high currents. Because P-channel devices have higher RDS(on) per unit silicon area than comparable N-channel parts, the SQD50P08-28 is best suited for switching applications rather than continuous linear operation.
SQJ431AEP - 200V P-Channel MOSFET 9.4A | Vishay Siliconix
The Vishay Siliconix SQJ431AEP is an automotive-grade P-Channel 200 V (D-S) MOSFET rated for 9.4 A continuous drain current and 68 W power dissipation, housed in a surface-mount PowerPAK SO-8 package. It uses Vishay's TrenchFET power MOSFET technology and is qualified to AEC-Q101 with 100 % Rg and UIS testing performed on every lot. The 200 V VDS rating combined with low on-resistance makes it suitable for high-side switching in automotive and industrial power systems. The part operates over a -55 °C to +175 °C junction temperature range, supporting under-hood and other thermally harsh environments. According to the manufacturer datasheet, the device is also halogen-free and RoHS compliant, with a PowerPAK SO-8 footprint that provides an exposed thermal pad for low thermal resistance. A P-Channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) in which the channel conductivity is carried by holes rather than electrons. P-Channel devices simplify high-side switching circuits because their source is connected to the supply rail and turning the device on only requires pulling the gate toward ground. Within the broader taxonomy, P-Channel MOSFETs are a subtype of power MOSFETs, which in turn belong to the discrete semiconductor family and ultimately to power management electronics. This hierarchy is useful when mapping the SQJ431AEP into system block diagrams: discrete semiconductor -> MOSFET -> P-Channel MOSFET -> TrenchFET -> automotive-grade power switch. Key features of the SQJ431AEP include a 200 V drain-source breakdown voltage, 9.4 A continuous ID at 25 °C case temperature, low RDS(on) per the part datasheet, a Logic-level capable gate threshold, and 100 % avalanche (UIS) tested construction. The AEC-Q101 qualification means the part has passed automotive-grade reliability stress tests including HTRB, HTGB, temperature cycling, and H3TRB, distinguishing it from commercial-only MOSFETs that share the same package. The PowerPAK SO-8 footprint delivers a much lower thermal resistance than a standard SO-8, enabling the 68 W dissipation figure. The SQJ431AEP's combination of 200 V rating and automotive qualification targets load switching, reverse-polarity protection, and high-side driver roles in 12 V and 24 V automotive systems, as well as industrial motor drive stages and battery management hot-swap paths. Designers favor P-Channel parts here to simplify the gate drive circuitry when the load must sit on the high side. Compared to N-Channel equivalents, P-Channel devices trade slightly higher RDS(on) for simpler drive logic, which is often worth the loss in 12 V-24 V systems. When laying out the PCB, place the source pad directly on a copper pour that connects to the supply rail and use multiple thermal vias under the exposed pad to pull heat into the inner planes. Always check the safe operating area at the intended switching frequency and worst-case load current before committing to the design.
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
The NXP Semiconductors SRF7S27125HSR3 is a 125 W, 27 V RF power LDMOSFET designed for high-efficiency UHF broadcast and industrial RF power amplifier applications. Housed in the NI-880S ceramic package (a flange-mount, hermetic RF transistor outline with two bolt-down tabs and a low-inductance ceramic top), it operates from a 27 V DC supply rail and delivers continuous-wave (CW) output power of 125 W across the UHF frequency band, with typical operation in the 470 MHz to 860 MHz television and DVB/DAB transmission spectrum. The device is built on NXP's high-voltage LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) process technology, which combines the high breakdown voltage of a lateral MOSFET with the RF performance characteristics needed for broadband linear amplification. An RF power LDMOSFET is a specialized power transistor optimized for high-frequency, high-power signal amplification in the megahertz to gigahertz range. It belongs to the broader category of RF power transistors within discrete semiconductors, sitting above generic MOSFETs in the hierarchy: RF power transistor -> power MOSFET -> MOSFET -> discrete semiconductor. LDMOSFETs are distinguished by their laterally diffused drain structure, which provides higher breakdown voltage, better thermal stability, and higher gain-bandwidth product than conventional vertical MOSFETs, making them the de-facto standard for modern UHF and VHF broadcast transmitters, radar, and pulsed-RF applications. Key features of the SRF7S27125HSR3 include 125 W typical CW output power, 27 V drain-source operating voltage, high gain across UHF, integrated ESD protection, internal input matching for broadband operation, and a thermally enhanced NI-880S ceramic-metal flange package rated for high continuous dissipation. The part is characterized for harsh thermal environments typical of base-station and broadcast PA assemblies. Typical applications include UHF digital TV transmitters (DVB-T/T2, ATSC, ISDB-T), DAB (Digital Audio Broadcasting) transmitters, industrial RF heating and drying equipment, RF plasma generation systems, particle accelerator drivers, and high-power CW or pulsed scientific/medical RF sources. The 27 V bias rail aligns with broadcast-industry standardized power supply architectures. A critical design consideration is flange-mount thermal management. The ceramic NI-880S package must be bolted to a heatsink or cold plate with adequate thermal compound; insufficient mounting pressure or missing thermal interface material will cause the junction temperature to exceed rated limits at 125 W CW operation. The drain bias sequencing (gate voltage must be applied before drain voltage during turn-on) must also be respected to prevent device damage from drain-current transients. This page synthesizes manufacturer datasheet characteristics, distributor stock and pricing snapshots, and application-level design guidance not typically consolidated on distributor product pages.
SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP
The NXP Semiconductors SRF8S9260HSR3 is an RF power field-effect transistor designed as an N-channel enhancement-mode lateral MOSFET, delivering 75 W average output power at 28 V supply in the 920-960 MHz band. Housed in the NI-880S ceramic package, it is built for cellular base-station power amplifiers in CDMA and multicarrier GSM applications where linearity and ruggedness are required. An RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete lateral power device optimized for high-frequency amplification in the HF/VHF/UHF/microwave bands. Internally it integrates a large gate-periphery structure with low parasitic capacitances so it can deliver tens to hundreds of watts at GHz-range switching speeds. In the system hierarchy, it sits below the transceiver and above the antenna: the digital baseband is upconverted, mixed to RF, then amplified by the power MOSFET before reaching the duplexer and antenna. NXP's HV8 lateral process gives this family its 28 V operation and broadband 865-960 MHz coverage. Key electrical features include 28 V drain-source operating voltage, 1.7 A typical quiescent drain current, and 18.6 dB small-signal gain at 960 MHz in a Class-AB reference circuit. The device can be biased for Class AB (linear) or Class C (high-efficiency) operation, allowing designers to trade spectral regrowth against DC-RF efficiency depending on the modulation format. Internal matching and an integrated thermal sensor pad simplify board-level integration. Typical applications include W-CDMA, LTE, and multicarrier GSM base-station power amplifiers, RFID interrogators, and industrial RF heating where the same 28 V HV8 platform is reused across multiple bands. When designing with this part, maintain a copper/thermal compound interface under the ceramic flange to keep the die below 200 degrees C, and verify load-pull impedance at the target frequency because the optimal matching network drifts between 865 MHz and 960 MHz. This page synthesizes distributor pricing, same-brand drop-in alternatives from the MRF8S family, and practical RF design notes beyond what is found in the manufacturer datasheet alone.
SSM3K35CT - 20V N-Channel MOSFET, 0.18A, SOT-883 | Toshiba
The Toshiba SSM3K35CT is a silicon N-channel enhancement-mode power MOSFET rated at 20 V V(BR)DSS and 0.18 A continuous drain current, housed in an ultra-small CST3 (SOT-883) surface-mount package. It features a typical on-resistance of 3.0 Ω at VGS = 4 V and is targeted at high-speed switching and analog-switch applications where board real estate is at a premium. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which the gate electric field modulates the conducting channel between drain and source. Small-signal N-channel MOSFETs such as the SSM3K35CT sit in the discrete-semiconductor hierarchy: MOSFET -> field-effect transistor -> transistor -> semiconductor -> discrete component. They are typically used as low-side switches, level shifters, or analog signal gates in portable, wearable, and space-constrained designs. Key features of the SSM3K35CT include a 20 V drain-source breakdown voltage suitable for 3.3 V and 5 V logic rails, a low gate threshold tailored to logic-level drive, a typical on-resistance of 3.0 Ω at VGS = 4 V, and a 100 mW power dissipation rating. Its CST3 (SOT-883) leadless package measures approximately 1.0 x 0.6 x 0.5 mm, making it one of the smallest standard MOSFET outlines available from Toshiba. The device is built on a silicon N-channel MOS process and is qualified for high-speed switching, supporting fast rise and fall times at low gate charge. The device's 3.0 Ω Rds(on) at 4 V VGS yields modest conduction loss at sub-100 mA loads. Designers should note that the rated continuous drain current of 0.18 A applies to a specific reference footprint and copper area; in dense layouts with limited copper, the effective continuous current will be lower due to thermal derating. The enhancement-mode behavior means the device is off at VGS = 0 and turns on only when the gate exceeds the threshold voltage, making it directly compatible with logic-level GPIO drive. Typical applications include load switching in smartphones and wearables, analog-signal gating in audio or sensor front ends, level translation between low-voltage microcontrollers and 5 V peripherals, high-side or low-side switching in battery-powered IoT nodes, and DC-DC converter synchronous-rectifier stages in compact point-of-load designs. Designers typically pair the SSM3K35CT with a small-signal gate resistor (typically 100 Ω to 1 kΩ) to control ringing. When designing with this part, account for the SOT-883 land-pattern requirements: the package has no leads but exposes the drain and source through bottom-side contacts, requiring precise PCB stencil and reflow control. Confirm the thermal pad is properly soldered to maintain the rated power dissipation. Designers should consult the Toshiba datasheet for absolute maximum ratings, switching loss curves, and safe operating area before finalizing the BOM.
SSM3K35CT-L3F - 20V 0.18A N-Channel MOSFET SOT-883 | Toshiba
The Toshiba SSM3K35CT-L3F is a single N-channel silicon MOSFET rated at 20 V V(DSS) and 0.18 A continuous drain current, housed in an ultra-compact SOT-883 (CST3) surface-mount package and specified for high-speed switching and analog-switch applications. Key headline parameters are a maximum drain-source voltage of 20 V, a continuous drain current of 180 mA, and an on-resistance of 3.0 Ω at VGS = 4 V, with the part delivered on an 8 mm embossed tape-and-reel format (L3F suffix). What is an N-channel MOSFET? An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor device whose majority carriers are electrons. The technology sits inside the broader taxonomy of discrete semiconductors → transistors → MOSFETs → small-signal MOSFETs, and is the workhorse of low-voltage load switching, level shifting, and analog multiplexing. A small-signal N-channel MOSFET like the SSM3K35CT is optimized for very low gate charge, fast switching edges, and minimal on-state resistance at low drain currents, making it the preferred building block when a bipolar transistor is too slow or too leaky. Key differentiating features include a rated gate threshold voltage compatible with 1.8 V/2.5 V/3.3 V logic drive, a single die in a 3-pin CST3 package measuring only 1.0 mm x 0.6 mm with a maximum height of 0.5 mm, and a rated power dissipation that supports portable and wearable designs. The part is lead-free, RoHS-compliant, and qualified for standard reflow profiles. Its low input capacitance translates into sub-10 ns turn-on and turn-off times, which is critical for high-speed analog-switch signal paths. Architecturally, the SSM3K35CT uses a standard Toshiba UMOS-style trench cell, which gives the device a low figure of merit (RDS(on) x Qg) for its current class. The 20 V BVDSS rating provides comfortable margin for 5 V USB rails, 3.3 V logic, and 12 V point-of-load distribution, while the 3.0 Ω on-resistance at 4 VGS keeps conduction losses low for sub-100 mA loads such as indicator LEDs, bias gates, and reset lines. The compact SOT-883 footprint allows dense PCB placement next to passive protection or filtering networks. Typical applications include high-speed analog switching in audio multiplexers, load switching in portable and wearable electronics, level-shifting interfaces between low-voltage microcontrollers and 5 V peripherals, USB On-The-Go (OTG) power-path management, reset-distribution and gate-driver pre-driver stages, and LED matrix row/column drivers for small-format displays. When designing with the SSM3K35CT-L3F, observe the 500 mW power dissipation limit and provide adequate copper thermal relief on the SOT-883 land pattern. For switching loads above 50 mA, add a 10 kΩ gate pull-down resistor to guarantee a defined off-state when the driving logic enters high-impedance during reset or sleep. This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers a single source for engineering and procurement decisions.
STB100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
The STB100N10F7 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 100A at 25°C, making it suitable for power conversion, motor control, and automotive systems. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is compatible with standard surface-mount assembly processes. A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power-handling requirements. Key features of the STB100N10F7 include a low on-state resistance (RDS(on)) of typically 8.5 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency. The device also offers a fast switching speed with a total gate charge (Qg) of 110 nC, enabling high-frequency operation. The MOSFET is avalanche-rated, with an avalanche energy (EAS) of 400 mJ, ensuring robustness in inductive load switching. Additionally, it features a wide operating temperature range from -55°C to +175°C, making it suitable for harsh environments. The STB100N10F7 utilizes STMicroelectronics' advanced strip-layout technology, which reduces on-state resistance and parasitic capacitances. This technology enhances the device's switching performance and thermal stability, allowing it to handle high current densities without compromising reliability. The device also includes an integrated gate-source ESD protection, improving its robustness during handling and assembly. Typical applications include DC-DC converters, motor control circuits, power supplies, and automotive systems such as electric power steering and battery management. The high current rating and low RDS(on) make it ideal for synchronous rectification in switch-mode power supplies, where efficiency is critical. In motor control, the fast switching speed and avalanche capability ensure reliable operation under inductive load conditions. When designing with this device, ensure adequate gate drive voltage (typically 10V) to achieve the lowest RDS(on). Proper PCB layout with short, wide traces for high-current paths is essential to minimize parasitic inductance and resistance. Additionally, consider thermal management by using the exposed pad of the D2PAK package with a sufficient copper area for heat dissipation.
STB11NM60T4 - 600V 11A N-Ch MDmesh MOSFET | STMicroelectronics
The STMicroelectronics STB11NM60T4 is an N-channel power MOSFET built on the second-generation MDmesh technology, rated for 600 V drain-to-source voltage, 0.4 Ω typical on-resistance, and 11 A continuous drain current, housed in a surface-mount D2PAK (TO-263) package. The part delivers a 160 W continuous power dissipation rating at 25°C case temperature, combining high blocking voltage with low conduction loss for switched-mode power conversion. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch designed to handle high currents and voltages in power electronics. Within the semiconductor hierarchy, it sits under discrete semiconductors > transistors > MOSFETs > power MOSFETs. The MDmesh family specifically uses a Multiple Drain vertical structure combined with a strip layout to minimize RDS(on) and gate charge, making the part suitable for high-frequency, high-efficiency converters where switching loss dominates. Key electrical features include a typical drain-source on-resistance of 0.4 Ω at VGS = 10 V, low input capacitance and gate charge for fast switching transitions, high dv/dt capability, and 100% avalanche-tested ruggedness. The device also offers low gate input resistance, which simplifies gate-driver design and reduces parasitic oscillation. Internally, the MDmesh II cell geometry reduces the figure of merit (FOM = RDS(on) × Qg) compared with first-generation parts, enabling cooler operation in the same footprint. Typical application circuits include 230 V AC PFC boost converters, half-bridge and full-bridge converters for telecom and server SMPS, electronic ballasts for HID lighting, and 48 V step-down converters where the 600 V rating provides ample derating margin. The device's avalanche rating also makes it suitable as a main switch in solar inverters and induction-heating cooktops. When laying out the PCB, ensure the exposed pad of the D2PAK is soldered to a minimum 1 square inch of copper to keep junction temperature within safe limits, and use a low-impedance gate-driver return path to suppress ringing at the gate during fast dv/dt transitions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
STB120N10F7 - 120A, 100V N-Channel Power MOSFET | STMicroelectronics
The STB120N10F7 is an N-channel Power MOSFET manufactured by STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 120A at 25°C, making it suitable for demanding power conversion and motor control circuits. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is widely used in surface-mount power applications. A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STB120N10F7 belongs to the STripFET F7 series, which is known for low on-resistance and fast switching. Key features of the STB120N10F7 include a very low on-resistance (RDS(on)) of typically 6.5 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 400 mJ, ensuring reliable operation under inductive load switching. The gate charge is optimized for efficient high-frequency operation, and the device is RoHS compliant and halogen-free, meeting modern environmental standards. The STB120N10F7 utilizes STMicroelectronics' advanced STripFET F7 technology, which employs a deep-groove structure to reduce on-resistance and parasitic capacitances. This results in improved figure of merit (FOM) compared to previous generations, enabling higher switching frequencies and lower power dissipation. The device's low thermal resistance (junction-to-case) of 0.5°C/W allows efficient heat transfer to the PCB, supporting high current operation with proper thermal management. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In a DC-DC converter, the STB120N10F7 can be used as a synchronous rectifier or main switch, where its low RDS(on) reduces conduction losses and its fast switching minimizes switching losses. In motor control, it can drive DC motors or brushless DC motors with high efficiency, thanks to its high current capability and ruggedness. When designing with this device, ensure adequate gate drive voltage (at least 10V) to achieve the lowest on-resistance. The gate-source voltage must not exceed ±20V to prevent oxide breakdown. Proper PCB layout with wide copper traces and thermal vias is essential to dissipate heat effectively, especially at high currents. Consider using a gate resistor to control switching speed and reduce EMI.
STB140N4F8 - 40V, 120A N-Channel Power MOSFET | STMicroelectronics
The STB140N4F8 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 120A at 25°C, making it suitable for demanding power conversion and motor control circuits. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is widely used in automotive and industrial applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, offering high input impedance and fast switching speeds. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STB140N4F8 include a low on-resistance (RDS(on)) of typically 4.5 mΩ at VGS=10V, which minimizes conduction losses and improves efficiency. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 200 mJ, ensuring reliable operation under inductive load switching. The gate charge (Qg) is 60 nC, enabling fast switching and reduced driver requirements. The operating junction temperature range is -55°C to +175°C, suitable for harsh environments. The STB140N4F8 utilizes STMicroelectronics' advanced strip layout technology, which reduces on-resistance and parasitic capacitances, enhancing switching performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Its robust design includes built-in protection against electrostatic discharge (ESD) up to 2kV (HBM), improving reliability in manufacturing and handling. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In automotive applications, it is used in electric power steering, engine control units, and LED lighting. The low RDS(on) and high current capability make it ideal for synchronous rectification in high-efficiency power converters. When designing with this MOSFET, ensure proper gate drive voltage (10V recommended) to achieve minimum on-resistance. The device is not intended for linear operation; use it in switching applications to avoid thermal runaway. Adequate PCB copper area and thermal vias are essential to dissipate heat effectively, especially at high currents.
STB21N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
The STB21N65M5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 17A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a D2PAK (TO-263) package, which is widely used in surface-mount power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and many other applications. They are preferred for their fast switching speeds, high input impedance, and low drive power requirements. Key features of the STB21N65M5 include a low gate charge (Qg) of 45 nC, which enables fast switching and reduces switching losses. The device also has a low thermal resistance junction-to-case of 1.1 °C/W, allowing efficient heat dissipation. The MDmesh M5 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for high-frequency applications. The device is RoHS compliant and halogen-free, meeting modern environmental standards. The STB21N65M5 utilizes ST's MDmesh M5 vertical structure, which reduces on-resistance and gate charge simultaneously, improving efficiency in power conversion. The device is avalanche-rated, with an avalanche energy of 400 mJ, ensuring robustness in harsh switching conditions. The integrated body diode has a fast reverse recovery time, reducing losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. The 650V rating makes it suitable for universal input (85-265V AC) power supplies, where the device must withstand high voltage transients. The low on-resistance minimizes conduction losses, improving overall system efficiency. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. Adequate heat sinking is required for high-current operation, and a snubber circuit may be needed to limit voltage spikes during switching.
STB24N60M2 - 600V 18A MDmesh M2 N-Channel MOSFET | STMicroelectronics
The STMicroelectronics STB24N60M2 is an N-channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET housed in a surface-mount D2PAK (TO-263) package. Built using ST's MDmesh M2 strip-layout high-voltage cell architecture, it combines low on-resistance with optimized switching figures of merit, making it suited for high-efficiency converters, telecom/server SMPS, and industrial PFC stages. A power MOSFET is a voltage-controlled majority-carrier switch whose drain-source channel conducts when a positive gate-source voltage is applied. The MDmesh M2 process is a refined high-voltage planar stripe layout that lowers RDS(on) per unit area and shrinks internal capacitances, placing the part in the broader hierarchy MOSFET -> discrete semiconductor -> power transistor. Compared with older MDmesh generations, M2 reduces gate charge and Eoss losses, which directly improves light-load efficiency in resonant and hard-switched topologies. Key features include a 600 V drain-source breakdown rating, a typical RDS(on) of 168 mΩ (≈190 mΩ max) at VGS=10 V, a continuous drain current of 18 A at TC=25 °C, and an avalanche-rated 150 W power dissipation. The device is fully rated for avalanche operation, carries an operating junction range of -55 °C to +150 °C, and provides an intrinsic source-body diode suitable for bridge and synchronous-rectification roles. The D2PAK footprint exposes a large metal pad for top-side PCB copper heatsinking, allowing the part to dissipate rated power with modest board copper area. Typical applications include switched-mode power supplies (SMPS), power factor correction (PFC) boost stages, solar inverters, welding equipment, and high-voltage LED drivers. The MDmesh M2 cell is favored in designs where high efficiency at full load, robust avalanche energy, and a compact SMD footprint outweigh the need for the absolute lowest RDS(on) of larger TO-247 parts. When designing with this device, respect the SOA boundaries published in the datasheet, keep the gate-drive loop compact to limit switching loss, and provide adequate copper heatsinking on the D2PAK tab. Compared with cross-brand 600 V CoolMOS or SuperFET competitors, the STB24N60M2 typically trades a slightly higher RDS(on) for stronger avalanche ruggedness and easier second-source availability. This page consolidates verified distributor pricing, drop-in alternative cross-references, and practical design notes not available on any single distributor product page.
STB30N60DM2AG - 600V 30A N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
The STB30N60DM2AG is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a 600V drain-source breakdown voltage and a continuous drain current of 30A at 25°C. It is housed in a D2PAK (TO-263) package, designed for high-efficiency power conversion applications. The device utilizes ST's MDmesh DM2 technology, which provides low on-resistance and fast switching performance, making it suitable for demanding power supply and motor control circuits. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, DC-DC converters, and motor drives, where they handle high voltages and currents with minimal power loss. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speeds and low drive power requirements. Key features of the STB30N60DM2AG include a low typical on-resistance of 0.099 ohm, a wide operating junction temperature range from -55°C to +150°C, and a gate charge of 60 nC. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Its MDmesh DM2 technology reduces conduction and switching losses, improving overall system efficiency. The D2PAK package offers excellent thermal performance with a junction-to-case thermal resistance of 0.5°C/W, enabling effective heat dissipation in high-power applications. The STB30N60DM2AG is built on a planar stripe layout with a proprietary process that minimizes the on-resistance per unit area. The device features an intrinsic body diode with a fast reverse recovery time, which is beneficial in bridge topologies. The gate charge characteristics are optimized for low gate drive losses, and the device is designed to withstand high dv/dt rates, ensuring robust operation in harsh environments. The MDmesh DM2 series is known for its ruggedness and reliability, making it a preferred choice for industrial applications. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, DC-DC converters, and motor control in industrial and automotive systems. The device's high voltage rating and low on-resistance make it ideal for 400V bus systems and 3-phase inverter stages. In motor control, the fast switching capability reduces electromagnetic interference (EMI) and improves efficiency. When designing with this MOSFET, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize conduction losses. A gate resistor may be needed to control switching speed and reduce ringing. Adequate heat sinking is essential to keep the junction temperature within limits, especially at high currents. The device is not AEC-Q100 qualified, so for automotive applications, consider the AEC-Q101 qualified version STB30N60DM2AG-1.
STB40N60M2 - 650V 40A N-Channel Power MOSFET | STMicroelectronics
The STB40N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 40A at 25°C, making it suitable for demanding power switching tasks. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is widely used in industrial and consumer power supplies. A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low on-resistance compared to bipolar transistors. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of switch-mode power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STB40N60M2 include a low on-resistance (RDS(on)) of typically 0.095 ohm, which minimizes conduction losses and improves overall efficiency. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh operating conditions. Its fast switching characteristics, with typical rise and fall times in the nanosecond range, enable high-frequency operation, reducing the size of magnetic components in power converters. The STB40N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced gate charge. This technology enhances the device's figure of merit (FOM), balancing conduction and switching losses for optimal performance in hard-switching topologies. The device also features a built-in diode with fast recovery, reducing reverse recovery losses in bridge configurations. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor control systems. In an SMPS, the STB40N60M2 can be used as the main switching element in a flyback or forward converter, where its high breakdown voltage and low on-resistance contribute to high efficiency and reliability. In PFC circuits, it enables near-unity power factor by switching at high frequency with minimal losses. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. Adequate heat sinking is essential, as power dissipation can be significant at high currents. The D2PAK package's exposed tab should be soldered to a large copper area for effective thermal management.
STB60NF06T4 - 60V, 60A N-Channel Power MOSFET | STMicroelectronics
The STB60NF06T4 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 60A at 25°C, and a low on-resistance (RDS(on)) of typically 14 mΩ at VGS=10V. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is suitable for surface-mount assembly. A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are widely used in power supplies, motor drives, and automotive applications due to their fast switching speed, high input impedance, and low conduction losses. They are a key component in the power management hierarchy, from discrete transistors to integrated power modules. Key features of the STB60NF06T4 include a very low on-resistance of 14 mΩ, which minimizes conduction losses and improves efficiency in high-current paths. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 300 mJ, making it suitable for applications with inductive loads. The gate charge is 60 nC, enabling fast switching and reduced switching losses. The device is RoHS compliant and halogen-free, meeting modern environmental standards. The STB60NF06T4 utilizes STMicroelectronics' advanced PowerMESH™ technology, which provides a superior figure of merit (FOM) compared to conventional MOSFETs. This technology reduces the on-resistance and gate charge, resulting in lower power dissipation and improved thermal performance. The device also features a built-in Zener diode for ESD protection, enhancing its robustness in harsh environments. Typical applications include DC-DC converters, motor control, power supplies, and automotive systems such as electric power steering and battery management. The low RDS(on) and high current capability make it ideal for synchronous rectification and load switching. In automotive applications, the device's ability to handle high surge currents and its wide operating temperature range (-55°C to 175°C) ensure reliable operation. When designing with the STB60NF06T4, it is important to consider the thermal management. The D2PAK package has a thermal resistance of 62.5°C/W (junction-to-ambient) and 1.0°C/W (junction-to-case). For high-current applications, a heatsink or adequate PCB copper area is required to keep the junction temperature within safe limits. Additionally, proper gate drive voltage (typically 10V) is necessary to achieve the lowest on-resistance.
STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
The STB80NF55-06T4 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 80A at 25°C, making it suitable for power management, motor control, and DC-DC conversion. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is compatible with standard surface-mount assembly processes. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are fundamental components in power electronics, serving as switches in power supplies, motor drives, and battery management systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STB80NF55-06T4 belongs to the STripFET family, known for low on-resistance and fast switching. Key features of the STB80NF55-06T4 include a very low on-resistance (RDS(on)) of typically 6.5 mΩ at VGS=10V, which minimizes conduction losses. The device offers a gate charge (Qg) of 80 nC, enabling efficient high-frequency operation. It has a wide operating temperature range from -55°C to +175°C, ensuring reliability in harsh environments. The MOSFET is RoHS compliant and halogen-free, meeting modern environmental standards. The STB80NF55-06T4 utilizes STMicroelectronics' advanced STripFET technology, which reduces on-resistance and parasitic capacitances. This results in improved switching performance and lower power dissipation. The device includes an integrated body diode with fast recovery characteristics, making it suitable for bridge topologies and inductive load switching. The D2PAK package offers a low thermal resistance of 1.0°C/W (junction-to-case), allowing efficient heat dissipation. Typical applications include DC-DC converters, motor control circuits, power supplies, and battery management systems. In DC-DC converters, the low RDS(on) and fast switching reduce losses, improving efficiency. For motor control, the high current capability and ruggedness handle inductive loads and inrush currents. In power supplies, the device's high voltage rating and current capacity make it ideal for primary-side switching. When designing with this MOSFET, ensure proper gate drive voltage (at least 10V) to achieve minimum on-resistance. Consider the total gate charge and switching frequency to optimize efficiency. Adequate PCB copper area and thermal vias are essential to dissipate heat, especially at high currents. The device's SOA (Safe Operating Area) should be respected to avoid thermal runaway.
STB80NF55-08AG - 55V 80A Automotive N-Channel MOSFET | STMicroelectronics
The STB80NF55-08AG is an automotive-grade N-channel Power MOSFET from STMicroelectronics, built using the proprietary STripFET process. It delivers a drain-to-source voltage (VDS) of 55V, a continuous drain current (ID) of 80A at case temperature (Tc), and a typical on-resistance (RDS(on)) of 6.5 mΩ. The device is housed in a D2PAK (TO-263) surface-mount package, designed for high-efficiency power conversion in demanding automotive and industrial environments. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. In the hierarchy of power electronics, a Power MOSFET is a type of discrete semiconductor, which falls under the broader category of semiconductor devices. The STripFET process used in this device is specifically engineered to minimize input capacitance and gate charge, enabling faster switching speeds and reduced switching losses compared to conventional MOSFETs. Key features of the STB80NF55-08AG include 100% avalanche testing, ensuring ruggedness under extreme conditions, and low gate charge (Qg) for efficient gate drive. The device also exhibits low gate input resistance, which contributes to stable high-frequency operation. These characteristics make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications, as well as in automotive systems requiring AEC-Q101 qualification. Technically, the STripFET process achieves extremely high packing density, resulting in low on-resistance and rugged avalanche characteristics. The device is rated for a maximum power dissipation of 300W at Tc, and it operates over a junction temperature range of -55°C to +175°C. The D2PAK package provides excellent thermal performance, with a thermal resistance (junction-to-case) of [DATA_NEEDED: thermal resistance value] °C/W, enabling efficient heat transfer to the PCB or heatsink. Typical applications include automotive engine control units (ECUs), DC-DC converters, motor control, and battery management systems. The device's low on-resistance minimizes conduction losses, while its fast switching reduces switching losses, making it ideal for high-frequency power conversion. In automotive applications, the AEC-Q101 qualification ensures reliability under harsh operating conditions, including temperature extremes and vibration. When designing with this MOSFET, it is critical to ensure adequate gate drive voltage to fully enhance the channel and minimize on-resistance. Additionally, proper PCB layout with low-inductance gate and source paths is essential to prevent parasitic oscillations and ensure reliable switching at high frequencies.
STB80NF55L-08-1 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
The STB80NF55L-08-1 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 80A at 25°C, making it suitable for power management in automotive, industrial, and consumer electronics. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is compatible with standard surface-mount assembly processes. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, and are essential for managing power flow in modern electronic systems. Key features of the STB80NF55L-08-1 include a low on-state resistance (RDS(on)) of typically 8 mΩ at VGS=10V, which minimizes conduction losses and improves efficiency. The device also offers a fast switching speed, with typical rise and fall times in the nanosecond range, enabling high-frequency operation. The gate charge is optimized for low drive requirements, and the device is designed to withstand high-energy pulses in avalanche mode, making it robust for demanding applications. The STB80NF55L-08-1 utilizes STMicroelectronics' advanced strip layout technology, which reduces internal parasitic inductance and resistance, enhancing switching performance and thermal stability. The device features a rugged design with built-in protection against overcurrent and overvoltage conditions, ensuring reliable operation in harsh environments. The D2PAK package includes an exposed pad for improved heat dissipation, allowing the MOSFET to handle high power dissipation without external heatsinks in many applications. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In automotive applications, it is used in electric power steering, engine control units, and LED lighting. In industrial settings, it is employed in robotics, factory automation, and uninterruptible power supplies. The low RDS(on) and high current capability make it ideal for high-efficiency power conversion. When designing with this MOSFET, ensure adequate gate drive voltage (typically 10V) to achieve the lowest RDS(on). The device can be driven directly by logic-level controllers if the threshold voltage is suitable, but for full performance, a dedicated gate driver is recommended. Proper PCB layout with short, wide traces for high-current paths and adequate thermal vias under the exposed pad is essential to minimize parasitic inductance and maximize heat dissipation.
STB9N60M2 - 600V N-Channel Power MOSFET | STMicroelectronics
The STB9N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 7A at 25°C, with a low on-resistance of 0.55 ohm typical. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance for surface-mount designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing for fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they function as electronic switches that efficiently regulate power flow. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STB9N60M2 include a low gate charge (Qg) of 18 nC, which reduces switching losses and enables high-frequency operation, and a fast body diode with low reverse recovery time, making it suitable for bridge topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 300 mJ, providing robustness against overvoltage transients. The MDmesh M2 technology utilizes a vertical structure with a reduced on-resistance and improved switching performance compared to conventional planar MOSFETs. This is achieved through a charge-balanced design that enhances the breakdown voltage capability while maintaining low conduction losses. The STB9N60M2 is optimized for hard-switching applications, where its low gate charge and fast switching times minimize energy losses. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and industrial motor control. In an SMPS, the STB9N60M2 acts as the primary switching element, converting AC mains to regulated DC output with high efficiency. Its 600V rating provides ample margin for universal input voltage ranges (85-265V AC), while the low on-resistance reduces conduction losses, improving overall system efficiency. When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heat sinking or PCB copper area is essential to keep the junction temperature within limits, especially at high currents. The D2PAK package offers a low thermal resistance of 62.5°C/W, allowing for efficient heat dissipation.