STB11NM60T4 - 600V 11A N-Ch MDmesh MOSFET | STMicroelectronics
N.º da peça: STB11NM60T4 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.92 | $960,00 |
| 1.000 | $1.65 | $1.650,00 |
STB11NM60T4 Visão geral
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch designed to handle high currents and voltages in power electronics. Within the semiconductor hierarchy, it sits under discrete semiconductors > transistors > MOSFETs > power MOSFETs. The MDmesh family specifically uses a Multiple Drain vertical structure combined with a strip layout to minimize RDS(on) and gate charge, making the part suitable for high-frequency, high-efficiency converters where switching loss dominates.
Key electrical features include a typical drain-source on-resistance of 0.4 Ω at VGS = 10 V, low input capacitance and gate charge for fast switching transitions, high dv/dt capability, and 100% avalanche-tested ruggedness. The device also offers low gate input resistance, which simplifies gate-driver design and reduces parasitic oscillation. Internally, the MDmesh II cell geometry reduces the figure of merit (FOM = RDS(on) × Qg) compared with first-generation parts, enabling cooler operation in the same footprint.
Typical application circuits include 230 V AC PFC boost converters, half-bridge and full-bridge converters for telecom and server SMPS, electronic ballasts for HID lighting, and 48 V step-down converters where the 600 V rating provides ample derating margin. The device's avalanche rating also makes it suitable as a main switch in solar inverters and induction-heating cooktops. When laying out the PCB, ensure the exposed pad of the D2PAK is soldered to a minimum 1 square inch of copper to keep junction temperature within safe limits, and use a low-impedance gate-driver return path to suppress ringing at the gate during fast dv/dt transitions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para STB11NM60T4 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
STP11NM60
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STF11NM60T4
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
STI11NM60ND
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
STB12NM50T4
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
STB14NK50ZT4
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SPB11N60C3
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FCB11N60
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
STB11NM60T4 Classificações máximas e características elétricas
| Tipo de transistor | N-Channel Power MOSFET |
| Technology | MDmesh II (Multiple Drain) |
| Drain-to-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25C | 11 A |
| Typical RDS(on) at VGS=10V | 0.4 Ω |
| Maximum Power Dissipation (PD) at TC=25C | 160 W |
| Temperatura de junção de operação | -55C to +150C |
| Encapsulamento | D2PAK (TO-263) surface mount |
| Tipo de montagem | Surface Mount |
| Avalanche Rated | Yes (100% tested) |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| dv/dt Capability | High |
Configuração de pinos do STB11NM60T4
| Pino 1 | Gate — Gate drive input - typical VGS drive 10V |
| Pino 2 | Drain — High-voltage drain - connected internally to the tab |
| Pino 3 | Source — Source return for the gate drive and load current |
| Pino Tab | Drain — Main drain connection - must be soldered to copper pour for thermal dissipation |
Área de Operação Segura (DC)
Aplicações típicas
STB11NM60T4 é adequado para 7 aplicaçãos: 230V AC PFC Boost Converter, Telecom 48V Half-Bridge Converter, Electronic Ballast for HID Lighting, Solar Microinverter DC-Side Switch, Induction Heating Cooktop Resonant Tank, Industrial SMPS Primary Switch, Auxiliary Power Supply for 3-Phase Motor Drives.
230V AC PFC Boost Converter
The STB11NM60T4 serves as the main boost switch in continuous-conduction-mode PFC front ends operating from 85-265 VAC rectified to 400 VDC bus. Its 600 V VDS rating provides more than 40% margin above the typical 400 V bus, comfortably absorbing line transients and inductive ringing from the boost inductor. The 0.4 Ω typical RDS(on) keeps conduction loss manageable at 11 A peak inductor current, and the MDmesh II fast body diode supports discontinuous-mode transitions without snap-off losses. Place the part in D2PAK footprint with at least 1 sq-in of copper pour for thermal dissipation, and use a gate-drive resistor of 10-22 Ω to control dv/dt switching losses.
Recomendado
Telecom 48V Half-Bridge Converter
In isolated 48 V to POL telecom DC-DC bricks, the STB11NM60T4 is well suited for the primary-side half-bridge switch position. Its 600 V blocking capability handles the rectified 48 V input with large transformer step-up ratios to deliver 12 V or lower isolated rails. The MDmesh II technology minimizes total gate charge so the part can switch at 100-200 kHz with manageable driver losses. Use the STB11NM60T4 paired with a complementary high-side MOSFET on the same heatsink, and keep the gate-drive loop tight to prevent ringing at the drain node.
Recomendado
Electronic Ballast for HID Lighting
The STB11NM60T4 is a strong choice as the main switch in high-intensity-discharge lamp ballasts, where the 600 V rating tolerates the inductive kickback when the lamp is struck and warmed up. Its 100% avalanche-tested ruggedness matches the demanding inrush conditions of cold-cathode and metal-halide lamps, while the 11 A continuous rating supports 70-150 W lamp power levels. The D2PAK package allows compact SMD assembly of the ballast board, reducing manufacturing cost versus TO-220 alternatives. Connect the part to a clamp snubber to further limit drain-voltage overshoot at lamp ignition.
Recomendado
Solar Microinverter DC-Side Switch
In sub-1 kW solar microinverters that take 30-60 VDC from a panel and convert to grid-tie 230 VAC, the STB11NM60T4 can serve as the primary-side switch in a push-pull or full-bridge topology feeding a high-frequency transformer. Its 600 V rating provides ample margin above the reflected primary voltage when the secondary is rectified to 400 V, and the avalanche rating handles transformer leakage energy at turn-off. The D2PAK SMD footprint suits high-volume solar-string production, and the 11 A rating supports up to 600 W continuous output. Add a TVS clamp across the primary for extra protection against indirect lightning transients.
Recomendado
Induction Heating Cooktop Resonant Tank
The STB11NM60T4 is used as the half-bridge switch in single-burner induction cooktop designs operating at 20-50 kHz into a resonant LC coil-plus-pot load. Its 600 V rating handles the high-voltage tank swings during zero-voltage-switching transients, and the low gate charge minimizes switching loss at the high operating frequency. The 100% avalanche rating is critical because the resonant tank can avalanche the MOSFET during start-up before the load stabilizes. Mount the part on a copper-pour heatsink sized to dissipate 30-50 W during full-power cooking cycles, and gate-drive it from a 12 V supply via a TC4420-type buffer.
Recomendado
Industrial SMPS Primary Switch
The STB11NM60T4 fits as the primary switch in 100-300 W industrial SMPS modules that accept 85-265 VAC input and deliver 24 VDC or 48 VDC isolated outputs. Its 600 V rating survives the rectified 325 VDC bus plus transformer leakage overshoot, and the avalanche capability absorbs the energy stored in the transformer's primary inductance at turn-off. The D2PAK package enables compact SMD assembly of the primary board, reducing manufacturing cost versus TO-220 alternatives. Pair the STB11NM60T4 with a current-mode PWM controller such as the UCC28C42, and use a 1 nF Y-cap across the isolation barrier for EMI compliance.
Recomendado
Auxiliary Power Supply for 3-Phase Motor Drives
The STB11NM60T4 serves as the main switch in 24 V auxiliary supplies that ride off the 400-600 VDC bus of three-phase variable-frequency drives. Its 600 V VDS rating tolerates the bus voltage with margin, and the D2PAK surface-mount footprint integrates cleanly with the gate-driver board. The avalanche rating provides robust handling of the auxiliary-transformer leakage energy without needing an external TVS clamp. The 11 A continuous rating supports 30-50 W of auxiliary power for gate-driver and control-rail needs. Use a UC3843-style controller and a 100 kHz switching frequency to keep the flyback transformer compact.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para STB11NM60T4 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | STP11NM60 | STF11NM60T4 | STI11NM60ND | STB12NM50T4 | SPB11N60C3 | FCB11N60 |
|---|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | TO-220 | TO-220FP | I2PAK | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | Fairchild Semiconductor |
| Drain-to-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 500 V | 600 V | 600 V |
| Continuous Drain Current (ID) | 11 A | 11 A | 11 A | 11 A | 12 A | 11 A | 11 A |
| Technology | MDmesh II | MDmesh II | MDmesh II | MDmesh | MDmesh II | CoolMOS C3 | UniFET |
Principais diferenciais
- Highest VDS rating in 11 A D2PAK MDmesh II family (vs STB12NM50T4)
- Surface-mount D2PAK packaging for high-volume SMD assembly (vs STP11NM60)
- MDmesh II fast body diode for bridge topologies (vs SPB11N60C3)
Notas de projeto
The D2PAK package dissipates up to 160 W at 25C case temperature, but only if the exposed tab is soldered to a copper pour of at least 1 square inch on a 1-oz FR-4 board. For derated operation above 2-3 W continuous, add top-side copper and thermal vias to a bottom-side heatsink plane. Estimated: at 11 A continuous in a flyback with 5 W average dissipation, the junction-to-ambient thermal resistance of 62.5 C/W gives a 312C temperature rise, so a small heatsink or 2 sq-in of copper is required. Multiple thermal vias (typically 9-16) under the tab are critical for keeping junction temperature below 150C.
Keep the gate-drive loop as short as possible - the gate driver should sit within 5 mm of the gate pin, with the gate return connected directly to the source pin rather than the power ground. A gate-drive resistor of 10-22 Ω in series dampens parasitic ringing, and a 100 kΩ pull-down to source ensures the MOSFET stays off when the driver output is high-impedance. Place input/output snubbers within 3-5 mm of the drain and source pads to minimize parasitic inductance at the drain node. For high dv/dt applications, use a ferrite bead in the gate loop to suppress common-mode ringing.
Do not operate STB11NM60T4 above 600 VDS even transiently - avalanche rating covers normal switching transients but not sustained overvoltage. Always include a TVS clamp across the primary if the design could see DC-bus transients above 550 V. Verify VGS stays within the 20 V absolute-maximum rating - a typical 12 V drive is safe, but accidental connection to 24 V can puncture the gate oxide. The MDmesh body diode is fast but not as robust as some competitor parts - add a small RC snubber (10 Ω + 1 nF) across the device if reverse-recovery stress is a concern in bridge topologies.
Route the high-current drain and source traces on top and bottom layers to form a tight low-inductance loop, with the ceramic decoupling capacitor placed directly between drain and source pads. The exposed tab footprint must be at least as large as the JEDEC TO-263 land pattern - typically 6.5 mm x 9.0 mm - with multiple thermal vias (0.3 mm drill, 0.6 mm pad, 1.0 mm pitch) connecting to the bottom heatsink pour. Avoid routing signal traces under the MOSFET body, where the drain tab can capacitively couple noise into sensitive analog signals.
Informações de conformidade
RoHS compliant per ST product page. Halogen-free status marked not compliant per Globalspec datasheet entry. Not AEC-Q100 qualified - this part targets industrial and consumer SMPS, not automotive under-hood environments.
