2EDN7434RXTMA1 vs 2EDN7524GXTMA1 Comparação

Comparação detalhada lado a lado de 2EDN7434RXTMA1 por Infineon e 2EDN7524GXTMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro 2EDN7434RXTMA1 2EDN7524GXTMA1
Marca Infineon Infineon
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,34 $0,82
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
Encapsulamento PG-TSSOP-8 (3.0 x 3.0 mm) PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad
Tipo de montagem Surface Mount Surface Mount
Faixa de temperatura de operação [DATA_NEEDED: operating temperature] —
Status RoHS Compliant Compliant
Nível MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Active Output Voltage Clamping Yes —
Product Type — Low-side gate driver IC
Number of Channels — 2 (dual)
Drive Current (Source/Sink) — 5 A peak
Input Logic — Non-inverting, TTL / 3.3 V CMOS-compatible
Input Voltage Tolerance — -10 V to +20 V on logic pins
Supply Voltage (VCC) — 4.5 V to 20 V [DATA_NEEDED: exact range]
Propagation Delay — 20 ns typical [DATA_NEEDED: exact figure]
Channel-to-Channel Delay Matching — 1 ns
Tempo de subida — 5 ns typical [DATA_NEEDED: exact test condition]
Tempo de descida — 5 ns typical [DATA_NEEDED: exact test condition]
Output Stage — Rail-to-rail, separate source/sink
UVLO Protection — Yes
Temperatura de operação — -40 C to +125 C
Target Devices — Standard MOSFETs, superjunction MOSFETs, GaN HEMTs

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