BSC020N03LSGATMA1 vs BSZ018NE2LSATMA1 Comparação
Comparação detalhada lado a lado de BSC020N03LSGATMA1 por Infineon e BSZ018NE2LSATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | BSC020N03LSGATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,42 | $0,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | — |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Faixa de temperatura de operação | -55 C to +150 C (junction) | -55C to +150C |
| Encapsulamento / Caixa | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS 25V |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Encapsulamento | — | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Lead-Free | — | Yes |
| Livre de halogênio | — | Yes |