BSC098N10NS5ATMA1 vs IPB024N10N5ATMA1 Comparação
Comparação detalhada lado a lado de BSC098N10NS5ATMA1 por Infineon e IPB024N10N5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ AtivoInfineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | BSC098N10NS5ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,55 | $1,86 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | 2.4 mΩ |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Faixa de temperatura de operação | [DATA_NEEDED: Tj min/max] | -55C to +175C (junction) |
| Encapsulamento | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TO263-7 (D2PAK-7) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 (unlimited floor life at <30C/85% RH) |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Packaging | — | Tape & Reel (13-inch reel) |
| Livre de halogênio | — | Yes (per Infineon product family policy) |