BSC098N10NS5ATMA1 vs IPB024N10N5ATMA1 对比

详细并排对比 BSC098N10NS5ATMA1 出自 Infineon 和 IPB024N10N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC098N10NS5ATMA1 IPB024N10N5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $1.86
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25C) 60 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm 2.4 mΩ
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Tc=25C) 69 W —
Power Dissipation (Ta) 2.5 W —
Diode Continuous Forward Current (IS) 63 A (Tc=25C) —
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) —
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) —
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) —
工作温度范围 [DATA_NEEDED: Tj min/max] -55C to +175C (junction)
封装 PG-TDSON-8-7 (SuperSO8 5x6) PG-TO263-7 (D2PAK-7)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
MSL 等级 1 1 (unlimited floor life at <30C/85% RH)
Shipping Packaging Tape & Reel (T/R) —
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Packaging — Tape & Reel (13-inch reel)
无卤 — Yes (per Infineon product family policy)

数据手册与资源

浏览全部产品 创建 BOM 获取报价