BSD214SNH6327XTSA1 vs BSL308CH6327XTSA1 Comparação
Comparação detalhada lado a lado de BSD214SNH6327XTSA1 por Infineon e BSL308CH6327XTSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSD214SNH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,27 | $0,21 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) at 25C | 1.5 A | — |
| Power Dissipation (Pd) at Ta | 500 mW | — |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | — |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | — |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | — |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | — |
| Encapsulamento | SOT-363 (PG-SOT363-PO), 6-pin | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C (junction) | -55 °C to +150 °C |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 (per JEDEC J-STD-020) |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |
| Livre de halogênio | — | Yes (per Infineon product family convention) |