BSD214SNH6327XTSA1 vs BSL308CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSD214SNH6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSD214SNH6327XTSA1
BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363
BSD214SNH6327XTSA1 β Active
Specification Comparison
| Parameter | BSD214SNH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.27 | $0.21 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS | β |
| Drain-to-Source Voltage (Vdss) | 20 V | β |
| Continuous Drain Current (Id) at 25C | 1.5 A | β |
| Power Dissipation (Pd) at Ta | 500 mW | β |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | β |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | β |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | β |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | β |
| Package | SOT-363 (PG-SOT363-PO), 6-pin | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| Automotive Qualification | AEC-Q101 qualified | β |
| Lead Plating | Pb-free | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Standard Pack Quantity | 3000 (Tape & Reel) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ low-voltage power MOSFETs |
| Configuration | β | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | β | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | β | 2 A |
| Total Power Dissipation (Ptot) | β | 500 mW |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | β | 5 nC @ 10 V |
| Input Capacitance (Ciss) | β | 18 pF |
| Automotive Qualified | β | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes (per Infineon product family convention) |