BSL308CH6327XTSA1 vs BSP315PH6327XTSA1 Comparação
Comparação detalhada lado a lado de BSL308CH6327XTSA1 por Infineon e BSP315PH6327XTSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSL308CH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,21 | $0,31 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Encapsulamento | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | 18 pF | — |
| Faixa de temperatura de operação | -55 °C to +150 °C | -55 C to +150 C (junction) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Livre de halogênio | Yes (per Infineon product family convention) | — |
| FET Type | — | P-Channel |
| Technology | — | OptiMOS (enhancement mode) |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -1.17 A (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |