BSL308CH6327XTSA1 vs BSP315PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSP315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSL308CH6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.31 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ low-voltage power MOSFETs | β |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | β |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | β |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | β |
| Total Power Dissipation (Ptot) | 500 mW | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | β |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | β |
| Total Gate Charge (Qg) | 5 nC @ 10 V | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | 18 pF | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +150 C (junction) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| FET Type | β | P-Channel |
| Technology | β | OptiMOS (enhancement mode) |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) | β | -1.17 A (Ta) |
| Power Dissipation (PD) | β | 1.8 W (Ta) |
| Gate-Source Voltage (VGS) | β | Β±20 V (max) |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Avalanche Energy Rated | β | Yes (per datasheet) |
| Lead-Free / RoHS | β | Yes / Compliant |