BSP316PH6327XTSA1 vs BSL308CH6327XTSA1 Comparação
Comparação detalhada lado a lado de BSP316PH6327XTSA1 por Infineon e BSL308CH6327XTSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSP316PH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,21 | $0,21 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -100 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Encapsulamento | PG-SOT223-4 (TO-261-4) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55 C to +150 C (junction) | -55 °C to +150 °C |
| Número de pinos | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |
| Livre de halogênio | — | Yes (per Infineon product family convention) |