BSP316PH6327XTSA1 vs BSL308CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP316PH6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 β Active
Specification Comparison
| Parameter | BSP316PH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.21 |
| FET Type | P-Channel | β |
| Drain-to-Source Voltage (VDS) | -100 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | β |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Package | PG-SOT223-4 (TO-261-4) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 Β°C to +150 Β°C |
| Number of Pins | 3 + thermal tab | β |
| Channel Mode | Enhancement | β |
| Technology | SIPMOS (P-channel MOSFET) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327 suffix) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ low-voltage power MOSFETs |
| Configuration | β | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Continuous Drain Current - N-channel (ID, N-ch) | β | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | β | 2 A |
| Total Power Dissipation (Ptot) | β | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | β | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | β | 5 nC @ 10 V |
| Input Capacitance (Ciss) | β | 18 pF |
| Automotive Qualified | β | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes (per Infineon product family convention) |