BSS316NH6327XTSA1 vs BSL316CH6327XTSA1 Comparação
Comparação detalhada lado a lado de BSS316NH6327XTSA1 por Infineon e BSL316CH6327XTSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSS316NH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,13 | $0,22 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS 2 (Trench) | OptiMOS low-voltage MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Faixa de temperatura de junção de operação | -55 C to +150 C | — |
| Encapsulamento | PG-SOT23 (SOT-23-3) | PG-TSOP6-6 (TSOP6, 6-pin) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| Nível MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS small-signal complementary MOSFET |
| Configuration | — | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Temperatura de operação | — | -55C to +150C (junction) |
| Channel Type | — | N-channel + P-channel (dual) |
| Contagem de pinos | — | 6 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |