EP3SE50F484C2G vs EP3SE50F484C3G Comparação

Comparação detalhada lado a lado de EP3SE50F484C2G por Intel e EP3SE50F484C3G por Intel. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Intel
EP3SE50F484C2G EP3SE50F484C2G - Stratix III E FPGA 47.5K LE 484-FBGA | Intel

EP3SE50F484C2G - Stratix III E FPGA 47.5K LE 484-FBGA | Intel

EP3SE50F484C2G ⚠ Última compra

Comparação de especificações

Parâmetro EP3SE50F484C2G EP3SE50F484C3G
Marca Intel Intel
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Última compra NRND
Status do estoque In Stock In Stock
Preço unitário (USD) $1.180,00 $205,00
Series Stratix III E —
Number of Logic Elements / Cells 47,500 —
Number of LABs / CLBs 1,900 —
Total RAM Bits 5,760,000 (5,760 Kbit) —
Number of User I/O 296 —
Encapsulamento / Caixa 484-BBGA, FCBGA (FineLine BGA) —
Tipo de montagem Surface Mount Surface Mount
Core Voltage Supply 0.86 V to 1.15 V —
Temperatura de operação 0 °C to +85 °C (TJ) 0C to +85C (commercial, "C")
Process Technology 40 nm TSMC low-power CMOS —
Logic Element Architecture Adaptive Logic Module (ALM) with 8-input fracturable LUT —
Embedded DSP Blocks Yes (variable-precision multipliers) —
Transceivers Multi-gigabit transceivers (selected package pins) —
Memory Interface Support DDR / DDR2 / DDR3 with hard PHY —
Partial Reconfiguration Supported —
Configuration Interface JTAG, Passive Serial, Fast Passive Parallel —
Part Status Active (Intel catalogue); long-term supply subject to Stratix III lifecycle policy —
Status RoHS Compliant Compliant (lead-free)
Family — Stratix III E
Logic Elements — 47,500
Adaptive Logic Modules (ALMs) — 19,000
Total Embedded Memory — 5,760,000 bits (5.76 Mbit)
M9K Memory Blocks — 320 (2,304 Kbits)
M144K Memory Blocks — 12 (1,728 Kbits)
User I/O Pins — 296
18x18 Multipliers — 384
PLLs — 4
Global Clock Networks — 16
Encapsulamento — 484-ball FCBGA (F484), 1.0 mm pitch
Speed Grade — C3
Process Node — 65 nm TSMC low-power
Core Voltage — 1.1 V

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