EPF10K50VRC240-4 vs EPF10K50VRC240-3N Comparação
Comparação detalhada lado a lado de EPF10K50VRC240-4 por Altera e EPF10K50VRC240-3N por Intel. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Altera
EPF10K50VRC240-4 - 50K Gate FLEX-10K FPGA, 240-Pin RQFP | Altera / Intel
EPF10K50VRC240-4 NrndComparação de especificações
| Parâmetro | EPF10K50VRC240-4 | EPF10K50VRC240-3N |
|---|---|---|
| Marca | Altera | Intel |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | NRND | NRND |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $85,30 | $58,75 |
| Family | FLEX-10K | FLEX 10K (Altera / Intel) |
| Typical Gates | 50,000 | 50,000 |
| Logic Elements (LEs) | 2,880 | — |
| Logic Array Blocks (LABs) | 360 | 360 |
| Maximum User I/Os | 189 | — |
| Embedded Array Blocks (EABs) | 10 (each up to 2,048 bits) | — |
| Encapsulamento | 240-pin RQFP (RQFP-240) with exposed pad | 240-RQFP (RQFP / Power QFP) with exposed pad |
| Tipo de montagem | Surface Mount | Surface Mount |
| Core Voltage (VCCINT) | 3.3 V | — |
| I/O Voltage (VCCIO) | 3.3 V or 5.0 V tolerant | — |
| Speed Grade | -4 | -3 |
| Internal Frequency (max) | 125 MHz | 125 MHz |
| Propagation Delay (per LE) | 0.6 ns | — |
| Temperatura de operação | 0C to +70C (commercial) | 0 °C to +70 °C (Commercial) |
| Configuration Method | SRAM, serial/parallel via EPC2/EPC8 PROM | SRAM, in-system programmable via JTAG / serial PROM |
| Programming Interface | JTAG (IEEE 1149.1), ByteBlaster, BitBlaster | — |
| Status RoHS | Non-compliant (legacy SnPb lead frame) | [DATA_NEEDED: confirm against manufacturer declaration] |
| Lead-Free | No (commercial grade is SnPb; -N suffix is lead-free) | — |
| Series | — | FLEX 10K |
| Logic Cells / Logic Elements | — | 2,880 |
| Embedded Array Bits | — | 20,480 bits (EABs) |
| Maximum User I/O | — | 189 |
| Core Voltage | — | 3.3 V |
| Propagation Delay | — | 0.6 ns (per digchip datasheet snippet) |
| Process Technology | — | 0.42 µm CMOS, SRAM-based |