IAUC120N04S6L005ATMA1 vs IAUC60N04S6L039ATMA1 Comparação
Comparação detalhada lado a lado de IAUC120N04S6L005ATMA1 por Infineon e IAUC60N04S6L039ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IAUC120N04S6L005ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,92 | $0,72 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUC120N04S6L005ATMA1 | — |
| Technology | OptiMOS 6, N-Channel Trench MOSFET | OptiMOS 6 (trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 120 A (Tj) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| Power Dissipation (PD, Tc=25°C) | 187 W | — |
| RDS(on) max at VGS=10 V | 0.55 mΩ at 60 A | — |
| RDS(on) max at VGS=4.5 V | 0.85 mΩ | — |
| Gate-Source Voltage (VGS) | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Total Gate Charge (Qg) | 177 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 11.203 nF at 25 V | — |
| Output Capacitance (Coss) | 2.982 nF | — |
| Reverse Transfer Capacitance (Crss) | 175 pF | — |
| Temperatura de junção de operação | -55 °C to +175 °C | -55C to +175C |
| Encapsulamento | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8 (SSO8) 5x6 mm |
| Tipo de montagem | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Nível MSL | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (100% avalanche tested) |