IAUC120N04S6L012ATMA1 vs IAUC100N04S6L014ATMA1 Comparação
Comparação detalhada lado a lado de IAUC120N04S6L012ATMA1 por Infineon e IAUC100N04S6L014ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 ✓ AtivoInfineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUC120N04S6L012ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,21 | $0,72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | IAUC / OptiMOS 6 40V |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | — |
| Power Dissipation (PD) at TC | 115 W | — |
| Faixa de temperatura de operação | -55 °C to +175 °C (junction) | -55C to +175C |
| Encapsulamento | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Nível MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Delivery Form | Tape & Reel | — |
| Mode | — | Enhancement |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| AEC-Q101 Qualification | — | Yes |
| Technology | — | OptiMOS 6 |
| Packaging | — | Tape & Reel (ATMA1 suffix) |