IAUC120N04S6L012ATMA1 vs IAUC100N04S6L014ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N04S6L012ATMA1 by Infineon and IAUC100N04S6L014ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveInfineon
IAUC100N04S6L014ATMA1
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N04S6L012ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40V | IAUC / OptiMOS 6 40V |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC | 120 A | β |
| Pulsed Drain Current (IDM) | 480 A | β |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΞ© (typ) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at 20V VGS] | β |
| Power Dissipation (PD) at TC | 115 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | -55C to +175C |
| Package | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Delivery Form | Tape & Reel | β |
| Mode | β | Enhancement |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | β | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | β | 100 W |
| AEC-Q101 Qualification | β | Yes |
| Technology | β | OptiMOS 6 |
| Packaging | β | Tape & Reel (ATMA1 suffix) |