IAUC60N10S5L110ATMA1 vs IAUCN04S7L050HATMA1 Comparação
Comparação detalhada lado a lado de IAUC60N10S5L110ATMA1 por Infineon e IAUCN04S7L050HATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUC60N10S5L110ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,66 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™-5 | OptiMOS™ 7 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Encapsulamento | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | [DATA_NEEDED: min/max operating temperature] | — |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| Nível MSL | 1 (per LCSC datasheet snippet) | 1 (per JEDEC J-STD-020) |
| Livre de halogênio | Yes (per Infineon product classification) | — |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Temperatura de junção de operação | — | -55 °C to +175 °C |
| Status RoHS | — | Compliant |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |