IAUC60N10S5L110ATMA1 vs IAUCN04S7L050HATMA1 对比

详细并排对比 IAUC60N10S5L110ATMA1 出自 Infineon 和 IAUCN04S7L050HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ 量产中
Infineon
IAUCN04S7L050HATMA1 IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon

IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon

IAUCN04S7L050HATMA1 ✓ 量产中

规格对比

参数 IAUC60N10S5L110ATMA1 IAUCN04S7L050HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.66 $0.83
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™-5 OptiMOS™ 7
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A —
Power Dissipation (P<sub>D</sub>, Tc) 88 W —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V —
封装 PG-TDSON-8-33 (TDSON-8 Single) PG-TDSON-8-57 (SuperSO8 half-bridge)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: min/max operating temperature] —
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] —
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] —
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) —
Packing Code ATMA1 (Tape & Reel) —
MSL 等级 1 (per LCSC datasheet snippet) 1 (per JEDEC J-STD-020)
无卤 Yes (per Infineon product classification) —
Customer Info / FGR J52 (per Infineon product data) —
Configuration — Dual N-Channel (Dual Drain, Half-Bridge)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID), Tc=25°C — 65 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.04 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) @ Tc=25°C — 40 W
工作结温 — -55 °C to +175 °C
RoHS 状态 — Compliant
Automotive Qualification — AEC-Q101 (family-level, automotive grade)
Technology — Trench MOSFET, OptiMOS™ 7 40V

数据手册与资源

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