IAUCN04S7N019GATMA1 vs IAUC100N04S6N028ATMA1 Comparação
Comparação detalhada lado a lado de IAUCN04S7N019GATMA1 por Infineon e IAUC100N04S6N028ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AtivoInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUCN04S7N019GATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,82 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 147 A | — |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| Encapsulamento | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-TDSON-8 (TDSON-8) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| Faixa de temperatura de operação | [DATA_NEEDED: junction temperature range from datasheet] | -55 °C to +175 °C |
| Series | — | OptiMOS 6 40V |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |