IAUCN04S7N019GATMA1 vs IAUC100N04S6N028ATMA1 비교
다음의 상세 나란히 비교: IAUCN04S7N019GATMA1 제조: Infineon 및 IAUC100N04S6N028ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ 활성
사양 비교
| 파라미터 | IAUCN04S7N019GATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 147 A | — |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| 패키지 | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-TDSON-8 (TDSON-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| 동작 온도 범위 | [DATA_NEEDED: junction temperature range from datasheet] | -55 °C to +175 °C |
| Series | — | OptiMOS 6 40V |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |