IGI65D1414A3MSXUMA1 vs IGI60L5050B1MXUMA1 Comparação
Comparação detalhada lado a lado de IGI65D1414A3MSXUMA1 por Infineon e IGI60L5050B1MXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ AtivoInfineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ AtivoComparação de especificações
| Parâmetro | IGI65D1414A3MSXUMA1 | IGI60L5050B1MXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $4,95 | $3,85 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN™ HEMT | — |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | GaN (Gallium Nitride), enhancement-mode |
| Encapsulamento | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | [DATA_NEEDED: operating temperature range] | — |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| Nível MSL | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-State Resistance (RDS(on)) per switch | — | 500 mΩ (0.5 Ω) |
| Number of GaN Switches | — | 2 |
| Gate Driver Source Current | — | +0.29 A |
| Gate Driver Sink Current | — | -0.7 A |
| Integrated Bootstrap Diode | — | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | — | Application-configurable (via gate resistor) |
| Contagem de pinos | — | 27 |
| Temperatura de operação | — | -40 °C to +125 °C (junction 150 °C) |
| Status RoHS | — | Compliant |
| Reach Status | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |