IGI65D1414A3MSXUMA1 vs IGI60L5050B1MXUMA1 Comparison
Detailed side-by-side comparison of IGI65D1414A3MSXUMA1 by Infineon and IGI60L5050B1MXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΞ© QFN-32 | Infineon
IGI65D1414A3MSXUMA1 β ActiveInfineon
IGI60L5050B1MXUMA1
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 β ActiveSpecification Comparison
| Parameter | IGI65D1414A3MSXUMA1 | IGI60L5050B1MXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.95 | $3.85 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolGaNβ’ HEMT | β |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (V_DS, max) | 650 V | β |
| On-Resistance (R_DS(on), typ) | 140 mΞ© per FET | β |
| Continuous Drain Current | 13.7 A (per Newark listing) | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| Technology | Enhancement-mode GaN HEMT (eMode) | GaN (Gallium Nitride), enhancement-mode |
| Package | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | β |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | β |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | β |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | β |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Compliance | Compliant | β |
| Drain-Source Voltage (VDS) | β | 600 V |
| On-State Resistance (RDS(on)) per switch | β | 500 mΞ© (0.5 Ξ©) |
| Number of GaN Switches | β | 2 |
| Gate Driver Source Current | β | +0.29 A |
| Gate Driver Sink Current | β | -0.7 A |
| Integrated Bootstrap Diode | β | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | β | Application-configurable (via gate resistor) |
| Pin Count | β | 27 |
| Operating Temperature | β | -40 Β°C to +125 Β°C (junction 150 Β°C) |
| RoHS Status | β | Compliant |
| Reach Status | β | Compliant |
| Lead-Free | β | Yes |
| Target Applications | β | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |