IMLT65R040M2HXTMA1 vs IGLT65R035D2ATMA1 Comparação
Comparação detalhada lado a lado de IMLT65R040M2HXTMA1 por Infineon e IGLT65R035D2ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ AtivoComparação de especificações
| Parâmetro | IMLT65R040M2HXTMA1 | IGLT65R035D2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $4,25 | $5,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | CoolGaN™ G5 TOLT |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| Temperatura de junção de operação | -55 °C to +150 °C | — |
| Encapsulamento | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-8 (top-side cooled) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Tipo de transistor | — | N-Channel enhancement-mode GaN HEMT |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id) at Tc | — | 47 A |
| Maximum Power Dissipation (Pd) at Tc | — | 154 W |
| On-Resistance (Rds(on)) | — | [DATA_NEEDED: typical Rds(on) in mohm] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Input Capacitance (Ciss) at Vds=400V | — | 540 pF |
| Faixa de temperatura de operação | — | [DATA_NEEDED: Tj min/max] |
| Cooling Configuration | — | Top-side cooled (TOLT) |
| Nível MSL | — | [DATA_NEEDED: MSL rating] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Production Wafer Size | — | 200 mm (8 inch) |