IMLT65R040M2HXTMA1 vs IGLT65R035D2ATMA1 对比

详细并排对比 IMLT65R040M2HXTMA1 出自 Infineon 和 IGLT65R035D2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IMLT65R040M2HXTMA1 IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon

IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon

IMLT65R040M2HXTMA1 ✓ 量产中
Infineon
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon

IGLT65R035D2ATMA1 ✓ 量产中

规格对比

参数 IMLT65R040M2HXTMA1 IGLT65R035D2ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.25 $5.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ G2 (2nd generation SiC trench) CoolGaN™ G5 TOLT
Technology Silicon Carbide (SiC) N-channel MOSFET —
Drain-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID, TC) 57 A —
Pulsed Drain Current (ID,pulse) 143 A —
On-State Resistance RDS(on) (typ, VGS=18V) 40 mΩ —
On-State Resistance RDS(on) (max, VGS=18V) 49 mΩ —
Total Gate Charge QG 28 nC —
Output Charge QOSS @ 400 V 53 nC —
Output Energy EOSS @ 400 V 7.2 µJ —
Continuous Drain Power Dissipation (PD, TC) 268 W —
Recommended Gate Drive Voltage VGS 18 V (turn-off: 0 V or negative) —
工作结温 -55 °C to +150 °C —
封装 PG-HDSOP-16-6 (surface mount, top-side-cooled) PG-HDSOP-16-8 (top-side cooled)
安装类型 Surface Mount Surface Mount
Qualification JEDEC industrial —
Packaging Tape & Reel —
Special Features Kelvin source pin, low reverse-recovery charge, hard-switching optimized —
晶体管类型 — N-Channel enhancement-mode GaN HEMT
Drain-Source Voltage (Vdss) — 650 V
Continuous Drain Current (Id) at Tc — 47 A
Maximum Power Dissipation (Pd) at Tc — 154 W
On-Resistance (Rds(on)) — [DATA_NEEDED: typical Rds(on) in mohm]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Input Capacitance (Ciss) at Vds=400V — 540 pF
工作温度范围 — [DATA_NEEDED: Tj min/max]
Cooling Configuration — Top-side cooled (TOLT)
MSL 等级 — [DATA_NEEDED: MSL rating]
RoHS 状态 — Compliant
Lead-Free — Yes
Production Wafer Size — 200 mm (8 inch)

数据手册与资源

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