IPB17N25S3100ATMA1 vs BSC039N06NSATMA1 Comparação
Comparação detalhada lado a lado de IPB17N25S3100ATMA1 por Infineon e BSC039N06NSATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPB17N25S3100ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,84 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 | — |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 60 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | [DATA_NEEDED: IDM pulsed value at TC] |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | — |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | — |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| Faixa de temperatura de operação | -55 C to +175 C | — |
| Encapsulamento | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Temperatura de junção de operação | — | -55C to +150C |
| Número de pinos | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Technology | — | OptiMOS 5 (TrenchFET-style) |
| Nível MSL | — | [DATA_NEEDED: MSL rating] |