IPB17N25S3100ATMA1 vs BSC039N06NSATMA1 비교
다음의 상세 나란히 비교: IPB17N25S3100ATMA1 제조: Infineon 및 BSC039N06NSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB17N25S3100ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.84 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 | — |
| 트랜지스터 유형 | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 60 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | [DATA_NEEDED: IDM pulsed value at TC] |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | — |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | — |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| 동작 온도 범위 | -55 C to +175 C | — |
| 패키지 | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| RoHS 상태 | Compliant (Green Product) | Compliant |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| 동작 접합 온도 | — | -55C to +150C |
| 핀 수 | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Technology | — | OptiMOS 5 (TrenchFET-style) |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |