IPB60R165CPATMA1 vs IPD50R380CEAUMA1 Comparação
Comparação detalhada lado a lado de IPB60R165CPATMA1 por Infineon e IPD50R380CEAUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ AtivoInfineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPB60R165CPATMA1 | IPD50R380CEAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,78 | $0,34 |
| Technology | CoolMOS CP (superjunction, N-Channel) | CoolMOS CE (super-junction) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 21 A | — |
| Power Dissipation (PD, Tc=25°C) | 192 W | — |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Operating Temperature Range (TJ) | -55°C to +150°C | — |
| Encapsulamento | PG-TO263-3-2 (D2PAK-2) | PG-TO252-3 (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant (Pb-free lead plating) | Compliant |
| JEDEC Qualification | Qualified per JEDEC for target applications | — |
| dv/dt Ruggedness | Extreme dv/dt rated | — |
| Polarity / Channel | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | — | 500 V |
| Continuous Drain Current (Id) at Tc=25C | — | 14.1 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 380 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 98 W |
| Temperatura de junção de operação | — | -55C to +150C |
| Channel Type | — | N-Channel |
| AEC-Q101 Automotive | — | Not qualified (CE variant; use CE-A for automotive) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL level] |