IPB60R165CPATMA1 vs IPD50R380CEAUMA1 Comparison

Detailed side-by-side comparison of IPB60R165CPATMA1 by Infineon and IPD50R380CEAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R165CPATMA1 IPD50R380CEAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.78 $0.34
Technology CoolMOS CP (superjunction, N-Channel) CoolMOS CE (super-junction)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 21 A β€”
Power Dissipation (PD, Tc=25Β°C) 192 W β€”
On-Resistance RDS(on), max (VGS=10V) 165 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th), typ) 3.5 V β€”
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] β€”
Operating Temperature Range (TJ) -55Β°C to +150Β°C β€”
Package PG-TO263-3-2 (D2PAK-2) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications β€”
dv/dt Ruggedness Extreme dv/dt rated β€”
Polarity / Channel N-Channel β€”
Drain-Source Voltage (V(BR)DSS) β€” 500 V
Continuous Drain Current (Id) at Tc=25C β€” 14.1 A
Continuous Drain Current (Id) at Tc=100C β€” [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V β€” 380 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ]
Total Power Dissipation (Ptot) at Tc=25C β€” 98 W
Operating Junction Temperature β€” -55C to +150C
Channel Type β€” N-Channel
AEC-Q101 Automotive β€” Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

Browse All Products Create BOM Request Quote