IPC90N04S5L3R3ATMA1 vs BSC027N10NS5ATMA1 Comparação
Comparação detalhada lado a lado de IPC90N04S5L3R3ATMA1 por Infineon e BSC027N10NS5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPC90N04S5L3R3ATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | NRND |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,96 | $1,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Temperatura de junção de operação | -55°C to +175°C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Encapsulamento | PG-TDSON-8-34 (TDSON-8) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Part Number | — | BSC027N10NS5ATMA1 |
| Technology | — | OptiMOS 5 (100V) |
| Channel Type | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 214 W |
| Faixa de temperatura de operação | — | [DATA_NEEDED: Tj min/max] |
| Status RoHS | — | Compliant |
| Nível MSL | — | [DATA_NEEDED: MSL rating] |