IPC90N04S5L3R3ATMA1 vs BSC027N10NS5ATMA1 비교

다음의 상세 나란히 비교: IPC90N04S5L3R3ATMA1 제조: Infineon 및 BSC027N10NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPC90N04S5L3R3ATMA1 BSC027N10NS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 NRND
재고 상태 In Stock In Stock
단가 (USD) $0.96 $1.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
동작 접합 온도 -55°C to +175°C —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
패키지 PG-TDSON-8-34 (TDSON-8) PG-TSON-8-3 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
Part Number — BSC027N10NS5ATMA1
Technology — OptiMOS 5 (100V)
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
동작 온도 범위 — [DATA_NEEDED: Tj min/max]
RoHS 상태 — Compliant
MSL 레벨 — [DATA_NEEDED: MSL rating]

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