IPD031N03LGATMA1 vs IPB90N06S4L04ATMA2 Comparação
Comparação detalhada lado a lado de IPD031N03LGATMA1 por Infineon e IPB90N06S4L04ATMA2 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IPD031N03LGATMA1 | IPB90N06S4L04ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,41 | $0,94 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 3 | OptiMOS T2, N-channel enhancement mode |
| Drain-to-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ 25 °C | 90 A (Tc) | — |
| Power Dissipation (Pd) | 94 W (Tc) | — |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/max] | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical @ 10V Vgs] | — |
| Output Charge (Qoss) | Ultra low (per datasheet tagline) | — |
| Temperatura de operação | -55 °C to +175 °C (junction) | — |
| Encapsulamento | PG-TO252-3-11 (DPAK-2) | PG-TO263-3-2 (D2PAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Mounting Tab | Drain (electrically connected) | — |
| Avalanche Energy Rated | Yes (per OptiMOS 3 datasheet family) | — |
| Status RoHS | Compliant | — |
| Nível MSL | 1 | MSL1 (unlimited floor life) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB90N06S4L04ATMA2 |
| Drain-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| Pulsed Drain Current (I_D,pulse) | — | 360 A |
| Power Dissipation (P_D, Tc) | — | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | — | 3.4 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Gate-Source Voltage (V_GS) | — | ±20 V |
| Faixa de temperatura de operação | — | -55 °C to +175 °C |
| Peak Reflow Temperature | — | 260 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS / Halogen-Free | — | Yes (Green Product) |