IPD038N06NF2SATMA1 vs IPD082N10N3GATMA1 Comparação
Comparação detalhada lado a lado de IPD038N06NF2SATMA1 por Infineon e IPD082N10N3GATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPD038N06NF2SATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,95 | $1,14 |
| FET Type | N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Continuous Drain Current (ID) at TA=25°C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/max] |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | — |
| Input Capacitance (Ciss) | 6700 pF | — |
| Output Capacitance (Coss) | 670 pF | — |
| Reverse Transfer Capacitance (Crss) | 43 pF | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| Temperatura de junção de operação | -55°C to +175°C | -55°C to +175°C |
| Encapsulamento | PG-TO252-3 (DPAK) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Channel Mode | Enhancement | — |
| Part Number | — | IPD082N10N3GATMA1 |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Encapsulamento / Caixa | — | PG-TO252-3 (DPAK), surface mount |
| Contagem de pinos | — | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |
| Nível MSL | — | 1 (per JEDEC J-STD-020) |