IPD038N06NF2SATMA1 vs IPD082N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPD038N06NF2SATMA1 by Infineon and IPD082N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD038N06NF2SATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $1.14 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (Trench) | OptiMOS 3 (Trench N-Channel) |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΞ© max | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/max] |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | β |
| Input Capacitance (Ciss) | 6700 pF | β |
| Output Capacitance (Coss) | 670 pF | β |
| Reverse Transfer Capacitance (Crss) | 43 pF | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Channel Mode | Enhancement | β |
| Part Number | β | IPD082N10N3GATMA1 |
| Manufacturer | β | Infineon Technologies |
| Continuous Drain Current (ID) @ Tc=25Β°C | β | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 8.2 mΞ© |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25Β°C | β | 125 W |
| Package / Case | β | PG-TO252-3 (DPAK), surface mount |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | β | Not applicable (industrial/consumer grade) |
| Lead-Free | β | Yes |
| MSL Level | β | 1 (per JEDEC J-STD-020) |