IPD30N10S3L34ATMA1 vs IPD30N06S2L13ATMA4 Comparação
Comparação detalhada lado a lado de IPD30N10S3L34ATMA1 por Infineon e IPD30N06S2L13ATMA4 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ AtivoInfineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ AtivoComparação de especificações
| Parâmetro | IPD30N10S3L34ATMA1 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,38 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (PD, Tc=25°C) | 57 W | — |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | — |
| Total Gate Charge (Qg typ) | 23 nC | — |
| Temperatura de junção de operação | -55°C to +175°C | — |
| Encapsulamento | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Nível MSL | 1 (JEDEC J-STD-020, 260°C peak reflow) | — |
| RoHS / REACH | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Temperatura de operação | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| Technology | — | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Contagem de pinos | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |