IPT019N08N5ATMA1 vs IAUC120N04S6N010ATMA1 Comparação
Comparação detalhada lado a lado de IPT019N08N5ATMA1 por Infineon e IAUC120N04S6N010ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPT019N08N5ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,86 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 80V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Continuous Drain Current (ID, Tc=25C) | 247 A | — |
| Continuous Drain Current (ID, Ta=25C) | 32 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm | — |
| Power Dissipation (PD, Tc=25C) | 231 W | — |
| Encapsulamento | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (5x6 mm leadless) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +175C | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Technology | OptiMOS 5 (stripe-cell trench) | OptiMOS 6 |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical value] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Body Diode | Monolithic, third-quadrant optimized | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Qualification | Industrial grade (AEC-Q101 variant available separately) | — |
| Packing | Tape & Reel (TMA1 suffix) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |