IPT019N08N5ATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IPT019N08N5ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT019N08N5ATMA1
IPT019N08N5ATMA1 - 80V, 1.9mOhm OptiMOS 5 N-MOSFET | Infineon
IPT019N08N5ATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IPT019N08N5ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 80V | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Continuous Drain Current (ID, Tc=25C) | 247 A | β |
| Continuous Drain Current (ID, Ta=25C) | 32 A | β |
| On-Resistance (RDS(on) max @ VGS=10V) | 1.9 mOhm | β |
| Power Dissipation (PD, Tc=25C) | 231 W | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Technology | OptiMOS 5 (stripe-cell trench) | OptiMOS 6 |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical value] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | β |
| Body Diode | Monolithic, third-quadrant optimized | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Qualification | Industrial grade (AEC-Q101 variant available separately) | β |
| Packing | Tape & Reel (TMA1 suffix) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Automotive Qualification | β | AEC-Q101 |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |
| Polarity | β | Single N-channel |