IQE004NE1LM7CGATMA1 vs IQE008N03LM5ATMA1 Comparação
Comparação detalhada lado a lado de IQE004NE1LM7CGATMA1 por Infineon e IQE008N03LM5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IQE004NE1LM7CGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,06 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Technology | N-Channel Trench Power MOSFET | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 15 V | — |
| Continuous Drain Current (ID, TA=25C) | 58 A | — |
| Continuous Drain Current (ID, TC=25C) | 379 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 89 W | — |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Encapsulamento | PG-TTFN-9-3 (surface mount) | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Tipo de montagem | Surface Mount | Surface Mount |
| Temperatura de operação | -55C to +150C (junction) | — |
| Status RoHS | Compliant | Compliant (per LCSC listing) |
| Nível MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel (CGATMA1 suffix) | — |
| Polarization | N-Channel | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (at 250 µA per LCSC snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Faixa de temperatura de operação | — | -55°C to +150°C (typical MOSFET junction rating) |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |