IQE004NE1LM7CGATMA1 vs IQE008N03LM5ATMA1 Comparison
Detailed side-by-side comparison of IQE004NE1LM7CGATMA1 by Infineon and IQE008N03LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE004NE1LM7CGATMA1
IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon
IQE004NE1LM7CGATMA1 β ActiveInfineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE004NE1LM7CGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.06 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Technology | N-Channel Trench Power MOSFET | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 15 V | β |
| Continuous Drain Current (ID, TA=25C) | 58 A | β |
| Continuous Drain Current (ID, TC=25C) | 379 A | β |
| Power Dissipation (TA=25C) | 2.1 W | β |
| Power Dissipation (TC=25C) | 89 W | β |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Package | PG-TTFN-9-3 (surface mount) | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel (CGATMA1 suffix) | β |
| Polarization | N-Channel | β |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 27 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 253 A |
| On-Resistance RDS(on) Typical | β | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (at 250 Β΅A per LCSC snippet) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 89 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C (typical MOSFET junction rating) |
| Gate-Source Voltage (VGS) Max | β | Β±20 V (typical MOSFET rating) |