IRF1405PBF vs IRF1010ZPBF Comparação
Comparação detalhada lado a lado de IRF1405PBF por Infineon e IRF1010ZPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRF1405PBF | IRF1010ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,42 | $1,36 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Stripe Planar cell structure) | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Encapsulamento | TO-220AB (through-hole) | TO-220AB (3-pin + tab), Through Hole |
| Tipo de montagem | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | JEDEC industry standard qualification |
| Status RoHS | PbF suffix indicates lead-free / RoHS compliant | Compliant (PBF = Pb-free) |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc | — | 75 A (Tc=25C) |
| Power Dissipation (Pd) at Tc | — | 140 W (Tc=25C) |
| On-Resistance (Rds on) Max | — | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) |
| Total Gate Charge (Qg) | — | 63 nC (typ, per Mouser listing) |
| MOSFET Operating Mode | — | Enhancement |
| Configuration | — | Single MOSFET |
| Maximum Junction Temperature | — | 175 C |
| Avalanche Rating | — | Improved repetitive avalanche rated |
| Lead Status | — | Lead Free |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage range] |