IRF1405PBF - 55V 169A N-Channel HEXFET MOSFET | Infineon
N.º da peça: IRF1405PBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $3.42 | $3,42 |
| 10 | $2.87 | $28,70 |
| 100 | $2.15 | $215,00 |
| 500 | $1.74 | $870,00 |
| 1.000 | $1.42 | $1.420,00 |
IRF1405PBF Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate high currents in power-conversion circuits. N-channel MOSFETs conduct when the gate is pulled above the source by the threshold voltage (Vth). Within the broader taxonomy, the IRF1405 belongs to the HEXFET family -> power MOSFET -> discrete semiconductor -> active electronic component. The IRF1405PBF uses Stripe Planar cell construction to minimize R_DS(on) per silicon area while preserving a wide safe operating area.
Key differentiating specifications include the 169A continuous drain current at 25C case temperature, 330W maximum power dissipation, gate threshold of 2.0V to 4.0V, and avalanche-rated construction for repetitive unclamped inductive switching. The TO-220AB package provides a low thermal resistance path and is widely accepted by industrial and automotive customers. The planar cell structure optimizes switching behavior below 100 kHz, the typical regime for motor drives, solenoid drivers, and DC-DC converters.
Architecturally, the IRF1405PBF uses Infineon's mature HEXFET stripe planar process, balancing low R_DS(on), rugged avalanche capability, and fast body-diode recovery. This positions it well for high-current switching where conduction losses dominate and switching frequency remains moderate. Compared with trench MOSFETs of similar ratings, the planar structure generally offers wider SOA and higher avalanche energy, at the cost of slightly higher R_DS(on) per die area.
Typical applications include anti-lock braking systems (ABS), electric power steering (EPS), DC motor control, solenoid drivers, power OR-ing, battery protection, and high-current DC-DC converters. Automotive and industrial designers favor the TO-220AB footprint for its thermal performance and mechanical ruggedness in harsh environments.
When designing with the IRF1405PBF, ensure that the gate drive voltage comfortably exceeds Vgs(th) under all temperature conditions, and size the heatsink so that junction temperature stays below 150C at worst-case load. A low-impedance gate-drive loop is essential to avoid parasitic turn-on in bridge topologies.
This page synthesizes Infineon datasheet specifications, distributor pricing, drop-in alternatives in TO-220AB, and practical thermal and gate-drive design notes not found in any single manufacturer source.
Alternativas drop-in para IRF1405PBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRF1405PBF (mesmo formato e footprint) — diferindo em Technology, RoHS Status, Package, Qualification, Manufacturer.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRF1405ZPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AUIRF1405
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFB4110PBF
✅ Drop-In✓ Em estoque
$1.55 / unidade
Ver ficha técnica →IRFP2907PBF
✅ Drop-In✓ Em estoque
$2.45 / unidade
Ver ficha técnica →IRFZ34NPBF
✅ Drop-In✓ Em estoque
$0.61 / unidade
Ver ficha técnica →IRF1405PBF Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) |
| Tipo de transistor | N-Channel MOSFET |
| Technology | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (V_DS) | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | 169 A |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V |
| Operating Junction Temperature (T_J max) | 175 C |
| Encapsulamento | TO-220AB (through-hole) |
| Tipo de montagem | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz |
| Status RoHS | PbF suffix indicates lead-free / RoHS compliant |
Configuração de pinos do IRF1405PBF
| Pino 1 | Gate — Gate control input; driven 10V above Source for full enhancement |
| Pino 2 | Drain — Power drain terminal; electrically connected to the metal tab |
| Pino 3 | Source — Source terminal; reference for gate drive and Kelvin connection |
Área de Operação Segura (DC, Tc=25C)
Aplicações típicas
IRF1405PBF é adequado para 6 aplicaçãos: Anti-Lock Braking System (ABS) Module, Electric Power Steering (EPS) Motor Drive, High-Current DC Motor Drive, Solenoid and Valve Driver, Battery Protection and Power OR-ing, High-Current DC-DC Converter.
Anti-Lock Braking System (ABS) Module
The IRF1405PBF's 169A continuous drain current and 55V V_DS rating make it well suited for ABS solenoid and pump-motor drivers in automotive brake systems. Its 5.3 mOhm R_DS(on) keeps conduction losses low during the high-current pulses required for hydraulic modulator valves. The TO-220AB package provides robust mechanical mounting and effective thermal coupling to the chassis or aluminum bracket. Avalanche-rated construction adds margin against the inductive kickback of ABS solenoids. For AEC-Q100 applications, the AUIRF1405 is the drop-in automotive-qualified equivalent in the same TO-220AB footprint.
Recomendado
Electric Power Steering (EPS) Motor Drive
The IRF1405PBF is commonly used as the low-side switching element in EPS brushless DC motor inverter stages where 30 to 80A RMS currents are typical. Its 330W power dissipation rating and 175C maximum junction temperature support the high peak currents demanded during parking maneuvers and low-speed steering assist. The 5.3 mOhm R_DS(on) reduces I-squared-R losses, helping designers meet stringent EV efficiency targets. TO-220AB through-hole mounting simplifies manufacturing and provides excellent thermal conductivity when clamped to a heatsink or chassis.
Recomendado
High-Current DC Motor Drive
Industrial DC motor drives in the 24V to 48V range benefit from the IRF1405PBF's 169A current capability and planar-cell HEXFET technology. Below 100 kHz switching - typical for motor PWM at 1 to 20 kHz - the planar structure delivers an excellent balance of low R_DS(on) and wide SOA. The TO-220AB package is mechanically rugged for factory-floor vibration, and the lead-free PbF finish supports RoHS-compliant industrial designs. Designers use the IRF1405PBF as a low-side chopper or in H-bridge configurations for bi-directional motor control.
Recomendado
Solenoid and Valve Driver
Solenoid drivers for hydraulic valves, fuel injectors, and pneumatic actuators rely on the IRF1405PBF's avalanche energy rating and fast switching speed to absorb inductive kickback without external snubbers in many designs. The 55V V_DS rating comfortably handles 24V inductive transients. The 169A pulsed current capability supports high-force solenoid actuation. The TO-220AB package through-hole mounting is preferred in industrial solenoid manifolds for mechanical durability and field serviceability.
Recomendado
Battery Protection and Power OR-ing
In battery management and redundant power OR-ing circuits, the IRF1405PBF acts as a low-R_DS(on) ideal-diode replacement for Schottky diodes. At 5.3 mOhm R_DS(on), conduction loss is dramatically lower than diode alternatives, particularly at the 50 to 100A currents typical of telecom and server battery plants. The 55V V_DS rating supports 48V nominal battery systems. Reverse-battery protection uses the IRF1405PBF as a low-side switch that disconnects the load on fault detection.
Recomendado
High-Current DC-DC Converter
Buck and buck-boost converters delivering 30 to 100A at 12V or 24V busses benefit from the IRF1405PBF's low R_DS(on) and planar-cell SOA. Its 5.3 mOhm on-resistance keeps synchronous-rectifier losses low, supporting higher converter efficiency and reducing heatsink requirements. The 55V V_DS rating handles 24V industrial bus transients. Switching frequencies from 20 to 100 kHz are within the part's optimal operating range per the datasheet guidance. Designers use the IRF1405PBF as either the control FET or sync FET in multiphase converter modules.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRF1405PBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRF1405ZPBF | AUIRF1405 | IRFB4110PBF | IRFP2907PBF | IRFZ34NPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-247 - different | TO-220AB - same |
| Drain-Source Voltage (V_DS) | 55 V | 55 V | 55 V | 100 V | 75 V | 55 V |
| Continuous Drain Current (I_D) | 169 A | 169 A | 169 A | 120 A | 209 A | 30 A |
| R_DS(on) Max | 5.3 mOhm | 4.9 mOhm | 5.3 mOhm | 9.0 mOhm | 4.5 mOhm | 40 mOhm |
| Maximum Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
| Automotive Qualified (AEC-Q100) | No (JEDEC industrial) | No | Yes | No | No | No |
| Power Dissipation (Tc=25C) | 330 W | 330 W | 330 W | 370 W | 470 W | 94 W |
Principais diferenciais
- Infineon planar HEXFET technology optimized below 100 kHz (vs Trench MOSFETs in the same TO-220AB class)
- AEC-Q100 qualified AUIRF1405 variant available with same footprint (vs Generic industrial-only 55V N-channel MOSFETs)
- 169A continuous drain current at Tc=25C in TO-220AB (vs IRFZ34NPBF in the same TO-220AB package)
Notas de projeto
At I_D = 50 A and R_DS(on) = 5.3 mOhm, conduction loss alone is approximately 13.25 W; add switching losses at 20 kHz for a realistic 20 to 25 W dissipation. The TO-220AB package has a typical R_theta_JC of 0.45 C/W, so junction temperature rise above the case is about 9 to 11 C at this load. Mount the device on a heatsink sized to keep case temperature below 100 C, leaving margin for transients and ambient variation. Use thermal interface material rated for the expected power density.
The TO-220AB tab is electrically tied to the drain; isolate the heatsink with a thermal pad and insulating washer when the heatsink is not at drain potential. Minimize the high-current loop between drain and source by keeping the bulk capacitors as close to the MOSFET terminals as practical. Use wide copper pours (>= 1 oz) for both drain and source paths to reduce parasitic inductance that can cause voltage overshoot during switching.
Estimated: gate-drive voltage must reach 10 V above source under all load and temperature conditions; a weak gate driver can leave the MOSFET in its linear region, causing severe overheating. The 55V V_DS rating does not include safe margin for typical 24V load-dump transients that can reach 36 to 40V - verify transient protection. Do not exceed the avalanche energy rating during unclamped inductive switching; add a snubber or TVS clamp if needed.
Informações de conformidade
PbF suffix indicates RoHS-compliant lead-free plating. The standard IRF1405PBF is qualified to JEDEC industrial standards; the AUIRF1405 variant is AEC-Q100 qualified for automotive.
